JPS63295463A - Zinc oxide varistor - Google Patents
Zinc oxide varistorInfo
- Publication number
- JPS63295463A JPS63295463A JP62129214A JP12921487A JPS63295463A JP S63295463 A JPS63295463 A JP S63295463A JP 62129214 A JP62129214 A JP 62129214A JP 12921487 A JP12921487 A JP 12921487A JP S63295463 A JPS63295463 A JP S63295463A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- axis direction
- varistor
- particles
- oxide particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 64
- 239000002245 particle Substances 0.000 claims abstract description 39
- 238000000465 moulding Methods 0.000 claims abstract description 4
- 238000001125 extrusion Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 9
- 238000005245 sintering Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010335 hydrothermal treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- -1 Bi2O Chemical class 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910000417 bismuth pentoxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は酸化亜鉛バリスタに係り、特にＣ軸方向異方性
構造を有する酸化亜鉛バリスタに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a zinc oxide varistor, and particularly to a zinc oxide varistor having an anisotropic structure in the C-axis direction.
［従来の技術］
バリスタは、電子回路などを異常電圧から保護する素子
（サージアブソーバ−；異常電圧保護素子）として、湿
度センサ、酸素センサ等の各種センサや、電力用避雷器
等に広く利用されている。[Prior Art] Varistors are widely used as elements (surge absorbers; abnormal voltage protection elements) to protect electronic circuits from abnormal voltages, and are used in various sensors such as humidity sensors and oxygen sensors, as well as power surge arresters. There is.
このバリスタはマトリックス物質の種類によりいくつか
のものが知られているが、近年、酸化亜鉛をマトリック
スとする酸化亜鉛バリスタが提案された。Several types of varistors are known depending on the type of matrix material, and recently a zinc oxide varistor using zinc oxide as a matrix has been proposed.
従来、酸化亜鉛バリスタは、マトリックスである酸化亜
鉛粒子とＢｉ２Ｏ，等の数種の金属酸化物を混合成形し
た後、焼成することにより製造されている。この方法で
得られる酸化亜鉛バリスタの微細構造は、マトリックス
である酸化亜鉛粒子と、その粒界に８１２０３を主体と
した添加酸化物が複合している構造となっている。Conventionally, zinc oxide varistors have been manufactured by mixing and molding zinc oxide particles as a matrix and several metal oxides such as Bi2O, and then firing the mixture. The fine structure of the zinc oxide varistor obtained by this method has a composite structure in which zinc oxide particles as a matrix and an additive oxide mainly composed of 81203 are present at the grain boundaries.
従来において、バリスタの製造に使用される酸化亜鉛粒
子に異方性は無く、また成形体に異方性を持たせるよう
な操作も行なわないので、得られる酸化亜鉛バリスタの
微細構造に異方性は無い。Conventionally, the zinc oxide particles used to manufacture varistors do not have anisotropy, and no operations are performed to impart anisotropy to the molded product, so the fine structure of the resulting zinc oxide varistors has anisotropy. There is no.
従って、当然、この粒子や粒界構造に著しく影響を受け
るバリスタ電圧についても同様に異方性は無い。Therefore, as a matter of course, there is no anisotropy in the varistor voltage, which is significantly affected by the grain and grain boundary structure.
［発明が解決しようとする問題点］
ところで、酸化亜鉛バリスタを異常電圧保護素子（サー
ジアブソー、バー）として使用する場合、その素子が有
する降伏電圧によりその利用範囲が限定される。つまり
、弱電素子等の使用電圧が低いものに対しては、降伏電
圧の低いサージアブソーバ−が必要であり、強電材料の
保護のためには、降伏電圧の高いサージアブソーバ−が
必要である。このため、多岐回路のような、必要降伏電
圧が多数存在するものに対しては、従来の酸化亜鉛バリ
スタではその１つ１つに対して異なる素子を通用しなけ
ればならず、コスト的に不利であった。[Problems to be Solved by the Invention] When a zinc oxide varistor is used as an abnormal voltage protection element (surge absorber, bar), its range of use is limited by the breakdown voltage of the element. In other words, a surge absorber with a low breakdown voltage is required for low voltage devices such as weak electric elements, and a surge absorber with a high breakdown voltage is required to protect strong electric materials. For this reason, for circuits with many required breakdown voltages, such as a wide variety of circuits, conventional zinc oxide varistors must use different elements for each one, which is disadvantageous in terms of cost. Met.
一方、特にコンピューター回路素子などの低い降伏電圧
を必要とするものの場合、マトリックスとなる酸化亜鉛
粒子には、粒径が数百μｍの巨大単結晶粒子を用いる必
要がある。これに適用するものとして、酸化亜鉛粒子の
異常粒成長を利用した酸化亜鉛バリスタなどが報告され
ているが、このようなバリスタでは十分に高い機械的強
度が得られないという問題点があり、さらに、そのバリ
スタ電圧は、１０Ｖｔｓａ／ｍｆｎ前後と、コンビエー
タ−回路素子などに適応するには、充分な性能とは言え
ない。On the other hand, especially in the case of devices that require a low breakdown voltage such as computer circuit elements, it is necessary to use giant single crystal particles with a particle size of several hundred μm as the zinc oxide particles serving as the matrix. Zinc oxide varistors that utilize the abnormal grain growth of zinc oxide particles have been reported to be applied to this purpose, but such varistors have the problem of not being able to obtain sufficiently high mechanical strength. The varistor voltage is around 10Vtsa/mfn, which is not sufficient performance to be applied to combinator circuit elements.
［問題点を解決するための手段］
本発明の酸化亜鉛バリスタは、Ｃ軸方向に結晶成長させ
た針状酸化亜鉛粒子をＣ軸方向に配向させて成形し、焼
結してなるものである。[Means for Solving the Problems] The zinc oxide varistor of the present invention is formed by forming acicular zinc oxide particles whose crystals have been grown in the C-axis direction, oriented in the C-axis direction, and sintering the particles. .
以下、本発明を図面を参照して詳細に説明する。Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図は本発明の酸化亜鉛バリスタの一実施例の微細構
造を示す模式図である。FIG. 1 is a schematic diagram showing the microstructure of an embodiment of the zinc oxide varistor of the present invention.
図示の如く、本発明の酸化亜鉛バリスタ１０は、Ｃ軸方
向に結晶成長させた針状の酸化亜鉛粒子１がＣ軸方向に
配向し、この針状酸化亜鉛粒子１をＢｉ２Ｏ５等を主体
とする添加酸化物からなる粒界層２が取り囲んだ構造と
なって、Ｃ軸方向異方構造を有する。As shown in the figure, in the zinc oxide varistor 10 of the present invention, acicular zinc oxide particles 1 are crystal-grown in the C-axis direction and are oriented in the C-axis direction, and the acicular zinc oxide particles 1 are mainly made of Bi2O5 or the like. It has a structure surrounded by a grain boundary layer 2 made of an added oxide, and has an anisotropic structure in the C-axis direction.
本発明の酸化亜鉛バリスタを製造するには、まず、マト
リックスの酸化亜鉛として、Ｃ軸方向に結晶成長させた
針状酸化亜鉛粒子を製造する。To manufacture the zinc oxide varistor of the present invention, first, as the zinc oxide matrix, acicular zinc oxide particles whose crystals are grown in the C-axis direction are manufactured.
このＣ軸方向に結晶成長させた針状酸化亜鉛粒子は、例
えば、次の■又は■の方法により得ることができる。The acicular zinc oxide particles grown in the C-axis direction can be obtained, for example, by the following method (1) or (2).
■ 平均粒径が数μｍ程度の酸化亜鉛粒子を適当な条件
で水熱処理することにより結晶成長させる。(2) Zinc oxide particles with an average particle size of several μm are subjected to hydrothermal treatment under appropriate conditions to cause crystal growth.
■ 亜鉛蒸気と水蒸気を用い、ＣＶＤ法により針状粒子
を得る。■ Acicular particles are obtained by CVD using zinc vapor and water vapor.
このようにして得られる針状酸化亜鉛粒子に数種の酸化
物を添加、混合する。添加する酸化物は、バリスタに要
求される特性に応じて適宜決定される。添加する酸化物
としては、例えばＢ１１Ｍｎ、Ｃｏ％Ｓｂ、Ｔｉ％Ｃｒ
等の酸化物が挙げられる。これらの酸化物の添加量は、
酸化亜鉛に対して０．１〜０．８モル％、特に０．２５
〜０．５モル％とするのが好ましい、これらの酸化物は
、優れたバリスタ特性に起因するショットキーバリアー
を形成する。Several kinds of oxides are added and mixed with the acicular zinc oxide particles thus obtained. The oxide to be added is appropriately determined depending on the characteristics required of the varistor. Examples of oxides to be added include B11Mn, Co%Sb, Ti%Cr
Examples include oxides such as. The amount of these oxides added is
0.1-0.8 mol%, especially 0.25 based on zinc oxide
These oxides, preferably at ~0.5 mole %, form a Schottky barrier due to their excellent varistor properties.
本発明の酸化亜鉛バリスタは、これらの酸化物と酸化亜
鉛との混合物を成形する際に、酸化亜鉛の針状粒子をＣ
軸方向に配向させて成形する。In the zinc oxide varistor of the present invention, when forming a mixture of these oxides and zinc oxide, acicular particles of zinc oxide are
Molded with axial orientation.
配向は、混合物を押出成形することにより容易に行なう
ことができるが、他の方法を採用することもできる。Orientation can be easily achieved by extrusion molding the mixture, but other methods can also be employed.
酸化亜鉛の針状粒子を配向させて成形した成形体は、次
いで常法に従って焼結し、両端に電極を付加することに
より、第１図に示すような本発明の酸化亜鉛バリスタ１
０が製造される。The molded body formed by orienting the acicular particles of zinc oxide is then sintered according to a conventional method, and electrodes are added to both ends to form the zinc oxide varistor 1 of the present invention as shown in FIG.
0 is produced.
［作 用］
本発明の酸化亜鉛バリスタが、Ｃ軸方向とＣ軸方向で異
なるバリスタ電圧を有するのは、バリスタ電圧が電極間
の直列方向に存在する粒界の数に比例するためである。[Function] The reason why the zinc oxide varistor of the present invention has different varistor voltages in the C-axis direction and in the C-axis direction is because the varistor voltage is proportional to the number of grain boundaries existing in the series direction between the electrodes.
即ち、例えば、アスペクト比が１００／１の酸化亜鉛針
状粒子が第１図の如く、理想的にＣ軸方向に配向してい
る立方体の素子を仮定すると、Ｃ軸方向に存在する粒界
の数は、Ｃ軸方向に存在する粒界の数の約１００倍であ
り、従ってバリスタ電圧も約１００倍となる。That is, for example, assuming a cubic element in which zinc oxide acicular particles with an aspect ratio of 100/1 are ideally oriented in the C-axis direction, the grain boundaries existing in the C-axis direction are The number is about 100 times the number of grain boundaries existing in the C-axis direction, and therefore the varistor voltage is also about 100 times.
このため、この素子一つで数Ｖと、数百Ｖのバリスタ電
圧を併せ持つことになり、異なる降伏電圧が必要な多岐
回路に利用することができる。Therefore, this single element has varistor voltages of several volts and several hundred volts, and can be used in a wide variety of circuits that require different breakdown voltages.
また、コンピューター回路素子等のサージアブソーバ−
として利用する場合、従来のように、異常粒成長した結
晶を用いると、その機械的強度が問題になるが本発明の
酸化亜鉛バリスタはマトリックス粒子の配向性のため、
その機械的強度は充分に高いものとなる。Also, surge absorbers for computer circuit elements, etc.
When used as a zinc oxide varistor, the mechanical strength becomes a problem when crystals with abnormal grain growth are used as in the past, but due to the orientation of the matrix particles, the zinc oxide varistor of the present invention
Its mechanical strength will be sufficiently high.
しかも、そのバリスタ電圧についても、先の異常粒成長
結晶粒を用いたものでは、低減可能な電圧が１０ｖ前後
であるのに対し、本発明のものは、使用する針状酸化亜
鉛粒子のアスペクト比を制御することにより、数Ｖまで
低減可能である。Moreover, regarding the varistor voltage, the voltage that can be reduced is around 10V with the above-mentioned one using abnormal grain growth crystal grains, whereas the one of the present invention has a lower aspect ratio of the acicular zinc oxide particles used. By controlling the voltage, it can be reduced to several volts.
［実施例］
以下、実施例を挙げて、本発明をより具体的に説明する
。[Example] Hereinafter, the present invention will be described in more detail with reference to Examples.
実施例１
平均粒径が数μｍ程度の酸化亜鉛粒子に、水熱処理（５
００ａｔｍ、４００℃、１モル％のＮａＯＨ水溶液中、
６ｈｒ）を施すことにより、これをφ１０μｍ、長さ１
ｍｍ（アスペクト比１００／１）にまで結晶成長させた
針状酸化亜鉛粒子を得る。このＺｎＯ粒子表面にＭｎ０
１Ｂｉ２０．を均一に添加するために、ＺｎＯ粒子と微
粒のＭｎ０１Ｂｉ２０．をそれぞれモル比で、９９．２
５：０．２５：０．５となるように懸濁溶液の状態で混
合する。これを限外濾過、乾燥後、エチルアルコールを
加えて混合粉体に可塑性を与え、押出成形する。この成
形体より１０１０ｍｍＸ１０の立方体を切り出しこれを
焼成（１１００℃、２ｈ）し、最後に銀ペーストを焼き
付けて電極を設け、酸化亜鉛バリスタを得る。Example 1 Zinc oxide particles with an average particle size of about several μm were subjected to hydrothermal treatment (5 μm).
00 atm, 400°C, in 1 mol% NaOH aqueous solution,
6hr), it was made into a diameter of 10μm and a length of 1
Acicular zinc oxide particles are obtained whose crystals have been grown to a size of 1.5 mm (aspect ratio: 100/1). Mn0 on the surface of this ZnO particle
1Bi20. In order to uniformly add ZnO particles and fine particles of Mn01Bi20. The molar ratio of each is 99.2
Mix in a suspension solution so that the ratio is 5:0.25:0.5. After ultrafiltration and drying, ethyl alcohol is added to give plasticity to the mixed powder, which is then extruded. A 1010 mm x 10 cube is cut out from this molded body and fired (1100°C, 2 hours).Finally, a silver paste is baked to provide electrodes and a zinc oxide varistor is obtained.
得られた酸化亜鉛バリスタは、Ｃ軸方向のバリスタ電圧
が３ Ｖ Ｉ ＩＩＡ ／ ｍ ｍ 、非直線指数αが
３５、ａ軸方向のバリスタ電圧が２５０ Ｖ ｌ−Ａ
／ｍｍ、α値が３２と、軸方向のバリスタ電圧に著しい
異方性を有するものであった。The obtained zinc oxide varistor has a varistor voltage in the C-axis direction of 3 V I IIA / mm, a nonlinear index α of 35, and a varistor voltage in the a-axis direction of 250 V l-A.
/mm, α value was 32, and the varistor voltage in the axial direction had remarkable anisotropy.
実施例２
亜鉛蒸気（蒸気圧１ 、２ ｍ ｍ Ｈｇ 、 Ｎ ２
流速５０ｍｆＬ／ｍ１ｎ）に水蒸気（Ｈ２０蒸気圧４
、６ ｍ ｍ Ｈｇ 、 ０２流速５０ｍｊ！／ｍ１ｎ
）を１１００℃で２〜４時間反応させることにより、φ
２０μｍ、長さ１０００μｍの針状酸化亜鉛粒子を得た
。Example 2 Zinc vapor (vapor pressure 1, 2 mm Hg, N2
Flow rate 50mfL/m1n) and water vapor (H20 vapor pressure 4
, 6 mm Hg, 02 flow rate 50 mj! /m1n
) by reacting at 1100°C for 2 to 4 hours, φ
Acicular zinc oxide particles of 20 μm and 1000 μm in length were obtained.
このようにして得られた酸化亜鉛粒子を用いて、実施例
１と同様にして酸化亜鉛バリスタを製造した。A zinc oxide varistor was manufactured in the same manner as in Example 1 using the zinc oxide particles thus obtained.
得られた酸化亜鉛バリスタは、Ｃ軸方向のバリスタ電圧
が３ Ｖ ｌｓＡ ／ ｍ ｍ 、 ＣＥ値が３３、ａ
軸方向のバリスタ電圧が１４５ｖＩＩｌｌ＾／ ｍ ｍ
、α値が３２と、実施例１のものと同様に、異方性を
有するものであった。The obtained zinc oxide varistor has a varistor voltage of 3 V lsA/mm in the C-axis direction, a CE value of 33, a
Axial varistor voltage is 145vIIll^/mm
, the α value was 32, and it had anisotropy like that of Example 1.
なお本発明において添加物としてＢｉ２Ｏ，、Ｍｎ０１
７）他に、Ｃｏｏ、Ｓｂ、Ｏ３をそれぞれ０．２５モル
％づつ加えることにより、α値がＣ軸、ａ軸ともに４０
以上という著しい特性改善がなされた。In addition, in the present invention, Bi2O,, Mn01 is used as an additive.
7) In addition, by adding 0.25 mol% each of Coo, Sb, and O3, the α value was increased to 40 for both the C axis and the a axis.
The above characteristics have been significantly improved.
実施例３．４
Ｂｉ２０．、ＭｎＯ％Ｃｏｏ、ｓｂ、ｏ、等を添加し、
第１表に示すような組成としたこと以外は実施例１と同
様の方法で酸化亜鉛バリスタを製造し、その軸方向のバ
リスタ電圧、α値を調べた。結果を′ｓ１表に示す。Example 3.4 Bi20. , MnO%Coo, sb, o, etc. are added,
A zinc oxide varistor was manufactured in the same manner as in Example 1 except that the composition was as shown in Table 1, and its axial varistor voltage and α value were examined. The results are shown in Table 's1.
′Ｍｔ表より、いずれも異方性を有することが明らかで
ある。' From the Mt table, it is clear that both have anisotropy.
３４１表
［発明の効果］
以上詳述した通り、本発明の酸化亜鉛バリスタは、Ｃ軸
方向に結晶成長させた針状酸化亜鉛粒子をＣ軸方向に配
向させて成形し、得られる成形体を焼結してなるもので
あって、
■ Ｃ軸方向とａ軸方向とで異なるバリスタ電圧を有す
るため、１つの素子で異なる降伏電圧を満すことができ
る。Table 341 [Effects of the Invention] As detailed above, the zinc oxide varistor of the present invention is produced by molding acicular zinc oxide particles whose crystals have grown in the C-axis direction and orienting them in the C-axis direction. It is made by sintering, and (1) has different varistor voltages in the C-axis direction and the a-axis direction, so one element can satisfy different breakdown voltages.
■ 十分に高い機械的強度を有する。■ It has sufficiently high mechanical strength.
■ バリスタ電圧を数Ｖのオーダーまで低減可能である
。■ Varistor voltage can be reduced to the order of several volts.
等の効果を有し、多岐回路やコンピューター素子等に極
めて有用である。It has the following effects and is extremely useful for a wide variety of circuits, computer elements, etc.
第１図は本発明の一実施例に係る酸化亜鉛バリスタの微
細構造を示す模式図である。
１・・・針状酸化亜鉛粒子、 ２・・・粒界層、１０・
・・酸化亜鉛バリスタ。
代理人 弁理士 重 野 剛
第１図FIG. 1 is a schematic diagram showing the fine structure of a zinc oxide varistor according to an embodiment of the present invention. 1... Acicular zinc oxide particles, 2... Grain boundary layer, 10.
...Zinc oxide varistor. Agent Patent Attorney Tsuyoshi Shigeno Figure 1
Claims (2)
軸方向に配向させて成形し、焼結してなることを特徴と
する酸化亜鉛バリスタ。(1) Acicular zinc oxide particles grown in the c-axis direction are
A zinc oxide varistor characterized by being formed by being oriented in the axial direction, molded and sintered.
許請求の範囲第１項に記載の酸化亜鉛バリスタ。(2) The zinc oxide varistor according to claim 1, wherein the molding is performed by extrusion molding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62129214A JPS63295463A (en) | 1987-05-26 | 1987-05-26 | Zinc oxide varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62129214A JPS63295463A (en) | 1987-05-26 | 1987-05-26 | Zinc oxide varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63295463A true JPS63295463A (en) | 1988-12-01 |
| JPH0448746B2 JPH0448746B2 (en) | 1992-08-07 |
Family
ID=15003957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62129214A Granted JPS63295463A (en) | 1987-05-26 | 1987-05-26 | Zinc oxide varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63295463A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009228709A (en) * | 2008-03-19 | 2009-10-08 | Smc Corp | Solenoid valve drive control apparatus and method for driving solenoid valve |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4502493B2 (en) * | 2000-10-10 | 2010-07-14 | 京セラ株式会社 | Zinc oxide sintered body and method for producing the same |
| US9034217B2 (en) | 2013-06-07 | 2015-05-19 | Ngk Insulators, Ltd. | Voltage nonlinear resistor |
-
1987
- 1987-05-26 JP JP62129214A patent/JPS63295463A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009228709A (en) * | 2008-03-19 | 2009-10-08 | Smc Corp | Solenoid valve drive control apparatus and method for driving solenoid valve |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0448746B2 (en) | 1992-08-07 |
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