JPS63295428A - Compound shown by ybgazn9o12 and having hexagonal lamellar structure and its production - Google Patents
Compound shown by ybgazn9o12 and having hexagonal lamellar structure and its productionInfo
- Publication number
- JPS63295428A JPS63295428A JP12907087A JP12907087A JPS63295428A JP S63295428 A JPS63295428 A JP S63295428A JP 12907087 A JP12907087 A JP 12907087A JP 12907087 A JP12907087 A JP 12907087A JP S63295428 A JPS63295428 A JP S63295428A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound
- compd
- oxide
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000011701 zinc Substances 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 5
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 5
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims description 5
- 229940075624 ytterbium oxide Drugs 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000003054 catalyst Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
- C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Catalysts (AREA)
- Compounds Of Iron (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料及び触媒材料として有
用な新規化合物であるＹｂにａＺｎ９Ｏ，１で示される
大方晶系の層状構造を有する化合物およびその製造法に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having an orthogonal layered structure represented by aZn9O,1 in Yb, which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and its use. Regarding manufacturing methods.
従来技術
従来、（Ｙｂ”Ｆｅ”６１）６Ｆａ”６（ｎは整数を示
す）で示される大方晶系の層状構造を有する化合物は本
出願人によって合成され知られている。Prior Art Conventionally, a compound having an macrogonal layered structure represented by (Yb"Fe"61)6Fa"6 (n is an integer) has been synthesized by the present applicant and is known.
マｂＦｅ２６４． Ｙｂ１Ｆｅ＠Ｑｔ、 Ｙｂ３Ｆｅ４
Ｑ１６及びＹｂａＦｅ５（５１３の六方晶系としての格
子定数、Ｙｂｅｌ、 ｅ５層、 Ｆｅ６１．５層ｐ Ｆ
ｅ ２０ ＊ ＃ ５層の単位格子内における暦数を
示すと表−１の通りである。MabFe264. Yb1Fe@Qt, Yb3Fe4
Q16 and YbaFe5 (513 lattice constant as hexagonal system, Ybel, e5 layer, Fe61.5 layer p F
Table 1 shows the calendar numbers in the unit cell of e 20 * # 5 layers.
これらの化合物は酸化鉄（Ｆｅ６） １モルに対して、
ＹｂＦｅ０．がｎモルの割合で化合していると考えられ
る層状構造を持つ化合物である。These compounds are based on 1 mole of iron oxide (Fe6),
YbFe0. It is a compound with a layered structure that is thought to be combined at a ratio of n moles.
発明の目的
本発明は（ＹｂＦｅＱ、）＃Ｆｅｅｌの化学式において
、ｎ＝ｌ／、に相当しＦｅ”の代わりにＧａ”をＦｅ”
の代わりにＺｎ”を置きかえて得られる新規な化合物を
提供するにある。Purpose of the Invention The present invention is based on the chemical formula of (YbFeQ,)#Feel, where n=l/, and Ga" is replaced with Fe".
The object of the present invention is to provide a novel compound obtained by replacing Zn'' in place of Zn''.
発明の構成
本発明のＹｂＧａＺｎ９Ｏ，２で示される化合物は、イ
オン結晶モデルでは、Ｙｂ”（Ｇａ”Ｚｎ’°）Ｚｒｌ
＊”５＋ｉ”−として記載され、その構造はＹｂ６．
、、層、 （Ｇａ”Ｚｎ’Ｌ″）ｏ２−ｓ層およびＺ
ｎＯ１層の積層によって形成されており、著しい構造異
方性を持っていることがその特徴の一つである。Ｚｎ”
のＩ／、はＧａ”と共に（Ｇａ”、Ｚｎ”）６１．５層
を作り、残りの＄／、はＺｎＯ層を作っている。六方晶
系としての格子定数は次の通りである。Structure of the Invention In the ionic crystal model, the compound represented by YbGaZn9O,2 of the present invention is Yb''(Ga''Zn'°)Zrl
*It is described as "5+i"-, and its structure is Yb6.
, , layer, (Ga"Zn'L") o2-s layer and Z
It is formed by stacking nO1 layers, and one of its characteristics is that it has significant structural anisotropy. “Zn”
I/, forms 61.5 layers (Ga'', Zn'') with Ga'', and the remaining $/ forms a ZnO layer.The lattice constant as a hexagonal system is as follows.
Ｂ＝３，２９６±０．００１（Ａ）
ｃ＝８７．６６±０．０１ （Ａ）
この化合物の面指数（ｈ ｋ ｔ Ｌ面間隔（ｄ（Ａ）
）（ｃｔｏは実測値ｔ ｄＣは計算値を示す）およびＸ
線に対する相対反射強度（■ ％）を示すと表−２の通
りである。B = 3,296 ± 0.001 (A) c = 87.66 ± 0.01 (A) Planar index (h k t L plane spacing (d (A)
) (cto is the actual measured value t dC is the calculated value) and X
Table 2 shows the relative reflection intensity (%) for the line.
この化合物は光機能材料、半導体材料および触媒材料等
に有用なものである。This compound is useful for optical functional materials, semiconductor materials, catalyst materials, and the like.
表 −２ この化合物は次の方法によって製造し得られる。Table-2 This compound can be produced by the following method.
金属イッテルビウムあるいは酸化イッテルビウムもしく
は加熱により酸化イッテルビウムに分解される化合物と
、金属ガリウムあるいは酸化ガリウムもしくは加熱によ
り酸化ガリウムに分解される化合物と、金属亜鉛あるい
は酸化亜鉛もしくは加熱により酸化亜鉛に分解されろ化
合物と、Ｙｂ、 ＧａおよびＺｎの割合が原子比で１対
１対９の割合で混合し、該混合物を６００℃以上の温度
で、大気中、酸化性雰囲気中あるいはＹｂおよびＧａが
各々３価イオン状態、Ｚｎが２価イオン状態より還元さ
れない還元雰囲気中で加熱することによって製造し得ら
れる。Ytterbium metal or ytterbium oxide or a compound that decomposes into ytterbium oxide when heated; gallium metal or gallium oxide or a compound that decomposes into gallium oxide when heated; and zinc metal or zinc oxide or a compound that decomposes into zinc oxide when heated. , Yb, Ga, and Zn are mixed in an atomic ratio of 1:1:9, and the mixture is heated to a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or in a state where Yb and Ga are each in a trivalent ion state. , can be produced by heating in a reducing atmosphere in which Zn is not reduced from a divalent ion state.
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させろためには粒
径が小さい方がよく、特に１０μｍ以下であることが好
ましい。Commercially available starting materials for use in the present invention may be used as they are, but in order to allow the chemical reaction to proceed quickly, it is better to have a small particle size, particularly preferably 10 μm or less.
また、光機能材料、半導体材料として用いる場合には不
純物の混入をきらうので、純度の高いことが好ましい。Further, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided.
出発物質が加熱により金属酸化物を得る化合物としては
、それぞれの金属の水酸化物、炭酸塩、硝酸塩等が挙げ
られる。Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals.
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.
原料の混合割合は、Ｙｂ、 Ｇａ、及びＺｎの割合が原
子比で１対１対９の割合であることが必要である。これ
をはずすと目的とする化合物の単−相を得ることができ
ない。The mixing ratio of the raw materials needs to be such that the atomic ratio of Yb, Ga, and Zn is 1:1:9. If this is removed, a single phase of the target compound cannot be obtained.
この混合物を大気中、酸化性雰囲気中あるいはＹｂおよ
びＧａが各々３価イオン状態、 Ｚｎが各々２価イオン
状態から還元されない還元雰囲気中で６００℃以上で加
熱する。加熱時間は数時間もしくはそれ以上である。加
熱の際の昇温速度には制約はない。加熱終了後急冷する
か、あるいは大気中に急激に引き出せばよい。This mixture is heated at 600° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Yb and Ga are not reduced from their respective trivalent ion states and Zn from their divalent ion states. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere.
得られたＹｂＧａＺｎ９Ｏ１２化合物の粉末は無色であ
り、粉末Ｘ、＠回折法によって結晶構造を有することが
分かった。その結晶構造は層状構造であり、Ｙｂ６．、
、層ｐ （Ｇａ、 Ｚｎ）Ｏ，−ｓ層、およびＺｎｅ１
層の積重ねによって形成されていることが分かった。The obtained YbGaZn9O12 compound powder was colorless and was found to have a crystal structure by powder X, @ diffraction method. Its crystal structure is a layered structure, and Yb6. ,
, layer p (Ga, Zn)O,-s layer, and Zne1
It turns out that it is formed by stacking layers.
実施例
純度９９．９９％以上の酸化イッテルビウム（Ｙｂ２Ｑ
３）粉末、純度９９．９％以上の酸化ガリウム（Ｇａｉ
Ｏｓ）粉末、試薬特級の酸化亜鉛（Ｚｎ口）粉末をモル
比で１対１対１８の割合に秤量し、めのう乳鉢内でエタ
ノールを加えて、約３０分間部合し、平均粒径数μｍの
微粉末混合物を得た。該混合物を白金管内に封入し、１
４５０℃に設定された管状シリコニット炉内に入れ、４
日間加熱し、その後、試料を炉外にとりだし室温まで急
速に冷却した。Examples Ytterbium oxide (Yb2Q) with a purity of 99.99% or more
3) Powder, gallium oxide (Gai
Os) powder and reagent grade zinc oxide (Zn) powder were weighed at a molar ratio of 1:1:18, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to obtain an average particle size of several μm. A fine powder mixture was obtained. The mixture was sealed in a platinum tube, and 1
Placed in a tubular siliconite furnace set at 450°C,
After heating for one day, the sample was taken out of the furnace and rapidly cooled to room temperature.
得られた試料は、ＹｂＧａＺｎ９Ｏ．２単−相であり、
粉末Ｘ！ａ回折法によって面指数（ｈｋｔ）、面間隔（
ｄｏ）および相対反射強度を測定した結果は表−２の通
りであった。The obtained sample was YbGaZn9O. 2 single-phase,
Powder X! The plane index (hkt) and plane spacing (
Table 2 shows the results of measuring do) and relative reflection intensity.
六方晶系としての格子定数は ａ＝３，２９６±０．００１（Ａ） ｃ＝８７．６６±０．０１ （Ａ）であった。The lattice constant as a hexagonal system is a=3,296±0.001(A) c=87.66±0.01 (A).
上記の格子定数および表−２の面指数（ｈ ｋ ｌ ）
より算出しな面間隔（ｄｃ（λ））は、実測の面間隔（
ｄ ｏ （λ））と極めてよく一致していた。The above lattice constant and the plane index (h k l ) in Table 2
The calculated surface spacing (dc(λ)) is the measured surface spacing (
d o (λ)).
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供する。Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.
Claims (2)
の層状構造を有する化合物(1) Compound with hexagonal layered structure represented by YbGaZn_9O_1_2
もしくは加熱により酸化イッテルビウムに分解される化
合物と、金属ガリウムあるいは酸化ガリウムもしくは加
熱により酸化ガリウムに分解される化合物と、金属亜鉛
あるいは酸化亜鉛もしくは加熱により酸化亜鉛に分解さ
れる化合物と、Ｙｂ、ＧａおよびＺｎの割合が原子比で
１対１対９の割合で混合し、該混合物を６００℃以上の
温度で大気中、酸化性雰囲気中あるいはＹｂおよびＧａ
が各々３価イオン状態、Ｚｎが２価イオン状態より還元
されない還元雰囲気中で加熱することを特徴とする ＹｂＧａＺｎ＿９Ｏ＿１＿２で示される六方晶系の層状
構造を有する化合物の製造法。(2) Metallic ytterbium or ytterbium oxide or a compound that decomposes into ytterbium oxide when heated; Metallic gallium or gallium oxide or a compound that decomposes into gallium oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. and Yb, Ga, and Zn in an atomic ratio of 1:1:9, and the mixture is heated at a temperature of 600°C or higher in the air, in an oxidizing atmosphere, or in an oxidizing atmosphere.
A method for producing a compound having a hexagonal layered structure represented by YbGaZn_9O_1_2, characterized by heating in a reducing atmosphere in which Zn is not reduced from a trivalent ion state and Zn from a divalent ion state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12907087A JPS63295428A (en) | 1987-05-26 | 1987-05-26 | Compound shown by ybgazn9o12 and having hexagonal lamellar structure and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12907087A JPS63295428A (en) | 1987-05-26 | 1987-05-26 | Compound shown by ybgazn9o12 and having hexagonal lamellar structure and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63295428A true JPS63295428A (en) | 1988-12-01 |
| JPH0333655B2 JPH0333655B2 (en) | 1991-05-17 |
Family
ID=15000335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12907087A Granted JPS63295428A (en) | 1987-05-26 | 1987-05-26 | Compound shown by ybgazn9o12 and having hexagonal lamellar structure and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63295428A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606895A (en) * | 1983-06-24 | 1985-01-14 | 株式会社東芝 | Containment vessel |
-
1987
- 1987-05-26 JP JP12907087A patent/JPS63295428A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606895A (en) * | 1983-06-24 | 1985-01-14 | 株式会社東芝 | Containment vessel |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0333655B2 (en) | 1991-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63210024A (en) | Compound having laminar structure of hexagonal crystal system expressed by ingazn5o8 and its production | |
| JPS63265818A (en) | Compound having hexagonal laminar structure expressed by ingazn7o10 and its production | |
| JPS63295428A (en) | Compound shown by ybgazn9o12 and having hexagonal lamellar structure and its production | |
| JPH0435407B2 (en) | ||
| JPS63295440A (en) | Compound shown by ybfezn9o12 and having hexagonal lamellar structure and its production | |
| JPS63295435A (en) | Compound shown by ybfezn4o7 and having hexagonal lamellar structure and its production | |
| JPS63295426A (en) | Compound shown by ybgazn7o10 and having hexagonal lamellar structure and its production | |
| JPS63295416A (en) | Compound shown by ybalzn9o12 and having hexagonal lamellar structure and its production | |
| JPS63295421A (en) | Compound shown by ybgazn5o8 and having hexagonal lamellar structure and its production | |
| JPS63295419A (en) | Compound shown by ybgazn3o6 and having hexagonal lamellar structure and its production | |
| JPS63295429A (en) | Compound shown by lugazn5o8 and having hexagonal lamellar structure and its production | |
| JPS63295433A (en) | Compound shown by scfezn9o12 and having hexagonal lamellar structure and its production | |
| JPH0435406B2 (en) | ||
| JPS63295427A (en) | Compound shown by tmgazn9o12 and having hexagonal lamellar structure and its production | |
| JPH0435408B2 (en) | ||
| JPS63295420A (en) | Compound shown by ybgazn4o7 and having hexagonal lamellar structure and its production | |
| JPH0435409B2 (en) | ||
| JPS63295434A (en) | Compound shown by lufezn9o12 and having hexagonal lamellar structure and its production | |
| JPS63256520A (en) | Compound having hexagonal layer structure represented by scalzn5o8 and production thereof | |
| JPS63295436A (en) | Compound shown by ybfezn3o6 and having hexagonal lamellar structure and its production | |
| JPS63295439A (en) | Compound shown by ybfezn5o8 and having hexagonal lamellar structure and its production | |
| JPS63295432A (en) | Compound shown by infezn9o12 and having hexagonal lamellar structure and its production | |
| JPS63295423A (en) | Compound shown by ybgazn6o9 and having hexagonal lamellar structure and its production | |
| JPH0435414B2 (en) | ||
| JPH0359005B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |