JPH0435406B2 - - Google Patents
Info
- Publication number
- JPH0435406B2 JPH0435406B2 JP62091363A JP9136387A JPH0435406B2 JP H0435406 B2 JPH0435406 B2 JP H0435406B2 JP 62091363 A JP62091363 A JP 62091363A JP 9136387 A JP9136387 A JP 9136387A JP H0435406 B2 JPH0435406 B2 JP H0435406B2
- Authority
- JP
- Japan
- Prior art keywords
- compound
- heated
- oxide
- decomposes
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 21
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000011701 zinc Substances 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Catalysts (AREA)
- Hard Magnetic Materials (AREA)
- Soft Magnetic Materials (AREA)
- Recrystallisation Techniques (AREA)
- Compounds Of Iron (AREA)
Description
産業上の利用分野
本発明は磁性材料、半導体材料、触媒材料等と
して有用な新規化合物であるInFeZn6O9で示され
る六方晶系の層状構造を有する化合物およびその
製造法に関する。
従来技術
従来、(Yb3+Fe3+O3)oFe2+O(nは整数を示す)
で示される六方晶系の層状構造を有する化合物は
本出願人によつて合成され知られている。
YbFe2O4,Yb2Fe3O7,Yb3Fe4O10及びYb4Fe5
O13の六方晶系としての格子定数、YbO1.5層、
FeO1.5層、Fe2O2.5層の単位格子内における層数
を示すと表−1の通りである。
これらの化合物は酸化鉄(FeO)1モルに対し
て、YbFeO3がnモル(n=1,2,3……)の
割合で化合していると考えられる層状構造を持つ
化合物である。
INDUSTRIAL APPLICATION FIELD The present invention relates to a compound having a hexagonal layered structure represented by InFeZn 6 O 9 , which is a new compound useful as a magnetic material, a semiconductor material, a catalyst material, etc., and a method for producing the same. Conventional technology Conventionally, (Yb 3+ Fe 3+ O 3 ) o Fe 2+ O (n indicates an integer)
The compound having a hexagonal layered structure represented by is synthesized by the applicant and is known. YbFe 2 O 4 , Yb 2 Fe 3 O 7 , Yb 3 Fe 4 O 10 and Yb 4 Fe 5
Lattice constant of O 13 as hexagonal system, YbO 1.5 layer,
Table 1 shows the number of layers in the unit cell of 1.5 FeO layers and 2.5 Fe 2 O layers. These compounds have a layered structure in which YbFeO 3 is thought to be combined at a ratio of n moles (n=1, 2, 3...) per mole of iron oxide (FeO).
【表】
発明の目的
本発明は(YbFeO3)oFeOの化学式において、
n=1/6に相当し、Yb3+の代わりにIn3+を、Fe2+
の代わりにZn2+を置きかえて得られた新規な化
合物を提供するにある。
発明の構成
本発明のInFeZn6O9で示される化合物は、イオ
ン結晶モデルではIn3+(Fe3+,Zn2+)Zn5 2+O9 2-と
して記載され、その構造はInO1.5層、(Fe,Zn)
O2.5層およびZnO層の積層によつて形成されてお
り、著しい構造異方性を持つことがその特徴の一
つである。Zn2+イオンの1/6はFe3+と共に
(Fe3+,Zn2+)O2.5層を作り、残りの5/6はZnO層
を作つている。六方晶系としての格子定数は次の
通りである。
a=3.283±0.001(Å)
c=43.36±0.01(Å)
この化合物の面指数(hkl)、面間隔(d(Å))
(dpは実測値、dcは計算値を示す)およびX線に
対する相対反射強度(I(%))を示すと表−2の
通りである。
この化合物は磁性材料、半導体材料および触媒
材料として有用なものである。例えば、異方性の
強い2次元的性質を持つ磁性体・半導体および触
媒物質としての利用の可能性が考えられる。[Table] Purpose of the invention The present invention is based on the chemical formula of (YbFeO 3 ) o FeO,
Corresponds to n = 1/6, In 3+ instead of Yb 3+ , Fe 2+
The object of the present invention is to provide a novel compound obtained by replacing Zn 2+ in place of Zn 2+ . Structure of the Invention The compound represented by InFeZn 6 O 9 of the present invention is described as In 3+ (Fe 3+ , Zn 2+ ) Zn 5 2+ O 9 2- in the ionic crystal model, and its structure is composed of InO 1.5 layers. , (Fe, Zn)
It is formed by stacking an O 2.5 layer and a ZnO layer, and one of its characteristics is that it has significant structural anisotropy. One-sixth of the Zn 2+ ions together with Fe 3+ form the (Fe 3+ , Zn 2+ )O 2.5 layer, and the remaining 5/6 form the ZnO layer. The lattice constants as a hexagonal crystal system are as follows. a=3.283±0.001 (Å) c=43.36±0.01 (Å) Planar index (hkl), interplanar spacing (d (Å)) of this compound
(d p is an actual measurement value, d c is a calculated value) and the relative reflection intensity (I (%)) for X-rays is shown in Table 2. This compound is useful as a magnetic material, a semiconductor material, and a catalytic material. For example, it is possible to use it as a magnetic material, a semiconductor, and a catalytic material that has two-dimensional properties with strong anisotropy.
【表】【table】
【表】
この化合物は次の方法によつて製造し得られ
る。
金属インジウムあるいは酸化インジウムもしく
は加熱により酸化インジウムに分解される化合物
と、金属鉄あるいは酸化鉄もしくは加熱により酸
化鉄に分解される化合物と、金属亜鉛あるいは酸
化亜鉛もしくは加熱により酸化亜鉛に分解される
化合物とを、In,FeおよびZnの割合が原子比で
1対1対6の割合で混合し、該混合物を600℃以
上の温度で、大気中、酸化性雰囲気中あるいはIn
およびFeが各々3価イオン状態、Znが2価イオ
ン状態より還元されない還元雰囲気中で加熱する
ことによつて製造し得られる。
本発明に用いる出発物質は市販のものをそのま
ま使用してもよいが、化学反応を速やかに進行さ
せるためには粒径が小さい方がよく、特に10μm
以下であることが好ましい。
また、磁性材料、半導体材料として用いる場合
には不純物の混入をきらうので、純度の高いこと
が好ましい。出発物質が加熱により金属酸化物を
得る化合物としては、それぞれの金属の水酸化
物、炭酸塩、硝酸塩等が挙げられる。
原料はそのまま、あるいはアルコール類、アセ
トン等と共に充分に混合する。
原料の混合割合は、In,FeおよびZnの割合が
原子比で1対1対6の割合であることが必要であ
る。これをはずすと目的とする化合物の単一相を
得ることができない。
この混合物を大気中、酸化性雰囲気中あるいは
InおよびFeが各々3価イオン状態、Znが2価イ
オン状態から還元されない還元雰囲気中で600℃
以上ので加熱する。加熱時間は数時間もしくはそ
れ以上である。加熱の際の昇温速度には制約はな
い。加熱終了後急冷するか、あるいは大気中に急
激に引き出せばよい。
得られたInFeZn6O9化合物の粉末は褐色であ
り、粉末X線回折法によつて結晶構造を有するこ
とが分かつた。その結晶構造は層状構造であり、
InO1.5層、(Fe,Zn)O2.5層、およびZnO層の積
み重ねによつて形成されていることが分かつた。
実施例
純度99.99%以上の酸化インジウム(In2O3)粉
末、純度99.9%以上の酸化鉄(Fe2O3)粉末、お
よび試薬特級の酸化亜鉛(ZnO)粉末をモル比で
1対1対12の割合に秤量し、めのう乳鉢内でエタ
ノールを加えて、約30分間混合し、平均粒径数
μmの微粉状混合物を得た。該混合物を白金管内
に封入し、1450℃に設定された管状シリコニツト
炉内に入れ4日間加熱し、その後、試料を炉外に
とりだし室温まで急速に冷却した。
得られた試料はInFeZn6O9の単一相であり、粉
末X線回折法によつて、各面指数(hkl)、面間隔
(dp)及び相対反射強度を測定した結果は表−2
の通りであつた。
六方晶系としての格子定数は、
a=3.283±0.001(Å)
c=43.36±0.01(Å)
であつた。
上記の格子定数および表−2の面指数(hkl)
より算出した面間隔(dc(Å))は、実測の面間隔
(dp(Å))と極めてよく一致している。
発明の効果
本発明は磁性材料、半導体材料および触媒とし
て有用な新規化合物を提供する。[Table] This compound can be produced by the following method. Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic iron or iron oxide or a compound that decomposes into iron oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. are mixed in an atomic ratio of In, Fe, and Zn in an atomic ratio of 1:1:6, and the mixture is heated at a temperature of 600°C or higher in the air, an oxidizing atmosphere, or an In
and Fe in a trivalent ion state, and Zn in a divalent ion state by heating in a reducing atmosphere in which they are not reduced. Commercially available starting materials may be used as they are, but in order for the chemical reaction to proceed quickly, it is better to have a small particle size, especially 10 μm.
It is preferable that it is below. Further, when used as a magnetic material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided. Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals. The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc. The mixing ratio of the raw materials needs to be such that the ratio of In, Fe and Zn is 1:1:6 in atomic ratio. If this is removed, a single phase of the target compound cannot be obtained. This mixture is stored in the air, in an oxidizing atmosphere, or
600℃ in a reducing atmosphere where In and Fe are not reduced from the trivalent ion state and Zn from the divalent ion state.
Heat as above. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere. The obtained InFeZn 6 O 9 compound powder was brown in color and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is layered,
It was found that it was formed by stacking 1.5 layers of InO, 2.5 layers of (Fe, Zn)O, and a layer of ZnO. Example: Indium oxide (In 2 O 3 ) powder with a purity of 99.99% or more, iron oxide (Fe 2 O 3 ) powder with a purity of 99.9% or more, and reagent grade zinc oxide (ZnO) powder in a 1:1 molar ratio. 12, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to obtain a fine powder mixture with an average particle size of several μm. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1450°C, and heated for 4 days, and then the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was a single phase of InFeZn 6 O 9 , and the results of measuring each plane index (hkl), plane spacing (d p ), and relative reflection intensity by powder X-ray diffraction method are shown in Table 2.
It was hot on the street. The lattice constants as a hexagonal crystal system were a=3.283±0.001 (Å) and c=43.36±0.01 (Å). The above lattice constants and the surface index (hkl) in Table 2
The calculated interplanar spacing (d c (Å)) is in extremely good agreement with the actually measured interplanar spacing (d p (Å)). Effects of the Invention The present invention provides novel compounds useful as magnetic materials, semiconductor materials, and catalysts.
Claims (1)
有する化合物。 2 金属インジウムあるいは酸化インジウムもし
くは加熱により酸化インジウムに分解される化合
物と、金属鉄あるいは酸化鉄もしくは加熱により
酸化鉄に分解される化合物と、金属亜鉛あるいは
酸化亜鉛もしくは加熱により酸化亜鉛に分解され
る化合物とを、In,FeおよびZnの割合が原子比
で1対1対6の割合で混合し、該混合物を600℃
以上の温度で、大気中、酸化性雰囲気中あるいは
InおよびFeが各々3価イオン状態、Znが2価イ
オン状態より還元されない還元雰囲気中で加熱す
ることを特徴とするInFeZn6O9で示される六方晶
系の層状構造を有する化合物の製造法。[Claims] 1. A compound having a hexagonal layered structure represented by InFeZn 6 O 9 . 2 Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic iron or iron oxide or a compound that decomposes into iron oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. and In, Fe, and Zn in an atomic ratio of 1:1:6, and the mixture was heated at 600°C.
In the air, in an oxidizing atmosphere, or at temperatures above
A method for producing a compound having a hexagonal layered structure represented by InFeZn 6 O 9 , which is heated in a reducing atmosphere in which In and Fe are not reduced to a trivalent ion state, and Zn is not reduced to a divalent ion state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62091363A JPS63256530A (en) | 1987-04-14 | 1987-04-14 | Compound having hexagonal layer structure represented by infezn6o9 and production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62091363A JPS63256530A (en) | 1987-04-14 | 1987-04-14 | Compound having hexagonal layer structure represented by infezn6o9 and production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63256530A JPS63256530A (en) | 1988-10-24 |
JPH0435406B2 true JPH0435406B2 (en) | 1992-06-11 |
Family
ID=14024298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62091363A Granted JPS63256530A (en) | 1987-04-14 | 1987-04-14 | Compound having hexagonal layer structure represented by infezn6o9 and production thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63256530A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104275187A (en) * | 2014-10-24 | 2015-01-14 | 三峡大学 | Visible light responding photocatalyst InFeZn4O7 and preparation method thereof |
-
1987
- 1987-04-14 JP JP62091363A patent/JPS63256530A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63256530A (en) | 1988-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |