JPS63295423A - Compound shown by ybgazn6o9 and having hexagonal lamellar structure and its production - Google Patents
Compound shown by ybgazn6o9 and having hexagonal lamellar structure and its productionInfo
- Publication number
- JPS63295423A JPS63295423A JP12906087A JP12906087A JPS63295423A JP S63295423 A JPS63295423 A JP S63295423A JP 12906087 A JP12906087 A JP 12906087A JP 12906087 A JP12906087 A JP 12906087A JP S63295423 A JPS63295423 A JP S63295423A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- compound
- metallic
- heating
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000011701 zinc Substances 0.000 claims abstract description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 9
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 7
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims abstract description 7
- 229940075624 ytterbium oxide Drugs 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 239000011787 zinc oxide Substances 0.000 claims abstract description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000003054 catalyst Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 239000000843 powder Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
Landscapes
- Catalysts (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料及び触媒材料として有
用な新規化合物であるマｂＧａＺｎ＠Ｑ＠で示される六
方晶系の層状構造を有する化合物およびその製造法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a compound having a hexagonal layered structure represented by GaZn@Q@, which is a new compound useful as an optical functional material, a semiconductor material, and a catalyst material, and its use. Regarding manufacturing methods.
従来技術
従来、（Ｙｂ”Ｆｅ”１５１）ＩＦｅ”６（ｎは整数を
示す）で示される六方晶系の層状構造を有する化合物は
本出願人によって合成され知られている。Prior Art Conventionally, a compound having a hexagonal layered structure represented by (Yb"Fe"151)IFe"6 (n is an integer) has been synthesized by the present applicant and is known.
マｂＦｅ１０４． Ｙｂ２Ｆｅ１６ｙ、マｂＪ＠４６．
ｔｓ及びＹｂ４Ｆｅ５６．ｓの六方晶系としての格子定
数、マｂｅ、 、、層、 Ｆｅ０１．６層ｅ Ｆ ｅ
２ ｅｌ ＠ ａ ｓ層の単位格子内における暦数を示
すと表−１の通りである。MabFe104. Yb2Fe16y, MabJ@46.
ts and Yb4Fe56. Lattice constant of s as a hexagonal system, mabe, , , layer, Fe01.6 layer e Fe
Table 1 shows the calendar numbers in the unit cell of the 2 el @ a s layer.
これらの化合物は酸化鉄（Ｆｅ６） １モルに対して、
Ｙｂ４ｅ５６がｎモルの割合で化合していると考えられ
る層状構造を持つ化合物である。These compounds are based on 1 mole of iron oxide (Fe6),
It is a compound having a layered structure in which Yb4e56 is thought to be combined at a ratio of n moles.
発明の目的
本発明は（ＹｂＦｅＱ、）ｎＦｅｆ５の化学式において
、ｎ−＋Ｉ／６に相当しＦｅ”の代わりにＧａ”をＦｅ
”の代わりにＺｎ”を置きかえて得られる新規な化合物
を提供するにある。Purpose of the Invention The present invention is based on the chemical formula of (YbFeQ,)nFef5, which corresponds to n-+I/6 and replaces Ga'' with
The object of the present invention is to provide a novel compound obtained by replacing "Zn" with "Zn".
発明の構成
本発明のＹｂＧａＺｎ＠Ｑ＠で示される化合物は、イオ
ン結晶モデルでは、Ｙｂ”（Ｇａ”Ｚｎ２°）Ｚｎ５”
Ｑ＋１’−とじて記載され、その構造はＹｂ６．−ｓ層
、 （Ｇａ”Ｚｎ”）０１．５層およびＺｎ６層の積
層によって形成されており、著しい構造異方性を持って
いることがその特徴の一つである。Ｚｎ”°のｌ／８は
Ｇａ”″と共に（Ｇａ”、Ｚｎ”）６２．５層を作り、
残りの５／１１はＺｎＯ層を作っている。六方晶系とし
ての格子定数は次の通りである。Structure of the Invention In the ionic crystal model, the compound represented by YbGaZn@Q@ of the present invention is Yb''(Ga''Zn2°)Zn5''
Q+1'-, and its structure is Yb6. -s layer, (Ga"Zn")01.5 layer, and Zn6 layer, and one of its characteristics is that it has significant structural anisotropy. l/8 of Zn"° creates 62.5 layers (Ga", Zn") with Ga"",
The remaining 5/11 is a ZnO layer. The lattice constants as a hexagonal crystal system are as follows.
ａ＝３，３０５±０．００１（Ａ）
ｃ＝４２．０８±０．０１ （久）この化合物の面
指数（ｈ ｋ ｆｆｉ ）、面間隔（ｄ（Ｘ ）１（ｄ
ｏは実測値、ｄ、は計算値を示す）およびＸ線に対する
相対反射強度（Ｎ％））を示すと表−２の通りである。a = 3,305 ± 0.001 (A) c = 42.08 ± 0.01 (k) Planar index (h k ffi ), plane spacing (d (X ) 1 (d
Table 2 shows the relative reflection intensity (N%) with respect to X-rays.
この化合物は光機能材料、半導体材料および触媒材料と
して有用なものである。This compound is useful as an optical functional material, a semiconductor material, and a catalyst material.
この化合物は次の方法によって製造し得られろ。This compound can be produced by the following method.
金属イッテルビウムあるいは酸化イッテルビウムもしく
は加熱により酸化イッテルビウムに分解される化合物と
、金属ガリウムあるいは酸化ガリウムもしくは加熱によ
り酸化ガリウムに分解される化合物と、金属亜鉛あるい
は酸化亜鉛もしくは加熱により酸化亜鉛に分解され、ろ
化合物と、Ｙｂ、 ＧａおよびＺｎの割合が原子比で１
対１対６の割合で混合し、該混合物を６５０℃以上の）
易度で、大気中、酸化性雰囲気中あるいはＹｂおよびＧ
ａが各々３価イオン状態、Ｚｎが２価イオン状態より還
元されない還元雰囲気中で加熱することによって製造し
得られる。Metallic ytterbium or ytterbium oxide or a compound that is decomposed into ytterbium oxide by heating; Metallic gallium or gallium oxide or a compound that is decomposed into gallium oxide by heating; Metallic zinc or zinc oxide or a compound that is decomposed into zinc oxide by heating and filtered. and the proportion of Yb, Ga and Zn is 1 in atomic ratio.
(mixed in a ratio of 1 to 6) and heated the mixture to 650°C or higher)
In air, oxidizing atmosphere or Yb and G
It can be produced by heating in a reducing atmosphere in which a is not reduced to a trivalent ion state and Zn is not reduced to a divalent ion state.
本発明に用いろ出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させろためには粒
径が小さい方がよ（、特に１０μｍ以下であることが好
ましい。Commercially available starting materials may be used as they are, but in order to allow the chemical reaction to proceed quickly, it is better to have a smaller particle size (especially preferably 10 μm or less).
また、光機能材料、半導体材料として用いろ場合には不
純物の混入をきらうので、純度の高いことが好ましい。Further, when used as an optical functional material or a semiconductor material, it is preferable to have high purity since contamination with impurities is avoided.
出発物質が加熱により金属酸化物を得る化合物としては
、それぞれの金属の水酸化物、炭酸塩、硝酸塩等が挙げ
られる。Examples of compounds whose starting materials yield metal oxides by heating include hydroxides, carbonates, and nitrates of the respective metals.
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。The raw materials are thoroughly mixed as they are or together with alcohols, acetone, etc.
原料の混合割合は、Ｙｂ、 Ｇａ、及びＺｎの割合が“
原子比で１対１対６の割合であることが必要である。こ
れをはずすと目的とする化合物の単−相を得ることがで
きない。The mixing ratio of the raw materials is such that the ratio of Yb, Ga, and Zn is “
It is necessary that the atomic ratio be 1:1:6. If this is removed, a single phase of the target compound cannot be obtained.
この混合物を大気中、酸化性雰囲気中あるいはＹｂおよ
びＧａが各々３価イオン状態、 Ｚｎが各々２価イオン
状態から還元されない還元雰囲気中で６５０℃以上で加
熱する。加熱時間は数時間もしくはそれ以上である。加
熱の際の昇温速度には制約はない。加熱終了後急冷する
か、あるいは大気中に急激に引き出せばよい。This mixture is heated at 650° C. or higher in the air, in an oxidizing atmosphere, or in a reducing atmosphere in which Yb and Ga are not reduced from their respective trivalent ion states and Zn from their divalent ion states. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, it can be rapidly cooled, or it can be rapidly drawn out into the atmosphere.
得られたＹｂＧａＺｎ、Ｑ、化合物の粉末は無色であり
、粉末Ｘ線回折法によって結晶構造を有することが分か
った。その結晶構造は層状構造であり、ｙｂｏ、、５層
＋ （Ｇａ、 Ｚｎ）Ｑｔ、ｓ層、およびＺｎ（５層の
積重ねによって形成されていることが分かった。The obtained YbGaZn, Q, compound powder was colorless and was found to have a crystal structure by powder X-ray diffraction. It was found that its crystal structure is a layered structure, formed by stacking ybo, 5 layers + (Ga, Zn) Qt, s layer, and Zn (5 layers).
実施例
純度９９．９９％以上の酸化イッテルビウム（Ｙｂ、ｆ
５．）粉末、純度９９．９％以上の酸化ガリウム（Ｇａ
２ｅｓ ）粉末、試薬特級の酸化亜鉛（Ｚｎｅｌ）粉末
をモル比で１対１対１２０割合に秤量し、めのう乳鉢内
でエタノールを加えて、約３０分間混合し、平均粒径数
μｍの微粉末混合物を得た。該混合物を白金管内に封入
し、１４５０℃に設定された管状シリコニット炉内に入
れ、４日間加熱し、その後、試料を炉外にとりだし室温
まで急速に冷却した。Examples Ytterbium oxide (Yb, f) with a purity of 99.99% or more
5. ) powder, gallium oxide (Ga
2es) Powder, reagent grade zinc oxide (Znel) powder was weighed at a molar ratio of 1:1:120, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to form a fine powder with an average particle size of several μm. A mixture was obtained. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1450°C, and heated for 4 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature.
得られた試料は、ＹｂＣａＺｎ＠ＱＢ単−相であり、粉
末Ｘ線回折法によって面指数（ｈｋｆｆｉ）、面間隔（
ｄｏ）および相対反射強度を測定した結果は表−２の通
りであった。The obtained sample was a YbCaZn@QB single-phase, and the surface index (hkffi) and interplanar spacing (
Table 2 shows the results of measuring do) and relative reflection intensity.
六方晶系としての格子定数は ａ＝３，３０５±０．００１（入） ｃ＝４２．８０±０．０１ （Ａ）であった。The lattice constant as a hexagonal system is a=3,305±0.001 (in) c=42.80±0.01 (A).
上記の格子定数および表−２の面指数（ｈ ｋ りより
算出した面間隔（ｄｃ（Ａｌｌは、実測の面間隔（ｄｏ
（Ｘ））と極めてよく一致していた。The planar spacing (dc) calculated from the above lattice constant and the planar index (hk) in Table 2 (All is the measured planar spacing (do
(X)) was in extremely good agreement.
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供する。Effects of the Invention The present invention provides novel compounds useful as optical functional materials, semiconductor materials, and catalysts.
Claims (2)
状構造を有する化合物(1) Compound with hexagonal layered structure represented by YbGaZn_6O_9
もしくは加熱により酸化イッテルビウムに分解される化
合物と、金属ガリウムあるいは酸化ガリウムもしくは加
熱により酸化ガリウムに分解される化合物と、金属亜鉛
あるいは酸化亜鉛もしくは加熱により酸化亜鉛に分解さ
れる化合物と、Ｙｂ、ＧａおよびＺｎの割合が原子比で
１対１対６の割合で混合し、該混合物を６５０℃以上の
温度で大気中、酸化性雰囲気中あるいはＹｂおよびＧａ
が各々３価イオン状態、Ｚｎが２価イオン状態より還元
されない還元雰囲気中で加熱することを特徴とする ＹｂＧａＺｎ＿６Ｏ＿９で示される六方晶系の層状構造
を有する化合物の製造法。(2) Metallic ytterbium or ytterbium oxide or a compound that decomposes into ytterbium oxide when heated; Metallic gallium or gallium oxide or a compound that decomposes into gallium oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. and Yb, Ga, and Zn in an atomic ratio of 1:1:6, and the mixture is heated at a temperature of 650°C or higher in the air, in an oxidizing atmosphere, or in an oxidizing atmosphere.
A method for producing a compound having a hexagonal layered structure represented by YbGaZn_6O_9, characterized by heating in a reducing atmosphere in which Zn is not reduced from a trivalent ion state and Zn from a divalent ion state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12906087A JPS63295423A (en) | 1987-05-26 | 1987-05-26 | Compound shown by ybgazn6o9 and having hexagonal lamellar structure and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12906087A JPS63295423A (en) | 1987-05-26 | 1987-05-26 | Compound shown by ybgazn6o9 and having hexagonal lamellar structure and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63295423A true JPS63295423A (en) | 1988-12-01 |
| JPH0333650B2 JPH0333650B2 (en) | 1991-05-17 |
Family
ID=15000095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12906087A Granted JPS63295423A (en) | 1987-05-26 | 1987-05-26 | Compound shown by ybgazn6o9 and having hexagonal lamellar structure and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63295423A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606895A (en) * | 1983-06-24 | 1985-01-14 | 株式会社東芝 | Containment vessel |
-
1987
- 1987-05-26 JP JP12906087A patent/JPS63295423A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606895A (en) * | 1983-06-24 | 1985-01-14 | 株式会社東芝 | Containment vessel |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0333650B2 (en) | 1991-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0244262B2 (en) | INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO | |
| JPH0244259B2 (en) | ||
| JPS63210024A (en) | Compound having laminar structure of hexagonal crystal system expressed by ingazn5o8 and its production | |
| JPS63265818A (en) | Compound having hexagonal laminar structure expressed by ingazn7o10 and its production | |
| JPS63295423A (en) | Compound shown by ybgazn6o9 and having hexagonal lamellar structure and its production | |
| JPH0435407B2 (en) | ||
| JPH0435424B2 (en) | ||
| JPS63295417A (en) | Compound shown by lualzn6o9 and having hexagonal lamellar structure and its production | |
| JPH0435408B2 (en) | ||
| JPH0435406B2 (en) | ||
| JPS63295420A (en) | Compound shown by ybgazn4o7 and having hexagonal lamellar structure and its production | |
| JPH0435409B2 (en) | ||
| JPS63295419A (en) | Compound shown by ybgazn3o6 and having hexagonal lamellar structure and its production | |
| JPS63295424A (en) | Compound shown by tmgazn4o7 and having hexagonal lamellar structure and its production | |
| JPS63295421A (en) | Compound shown by ybgazn5o8 and having hexagonal lamellar structure and its production | |
| JPH0314779B2 (en) | ||
| JPS63295427A (en) | Compound shown by tmgazn9o12 and having hexagonal lamellar structure and its production | |
| JPS63277522A (en) | Compound having hexagonal layer structure expressed by infezn8o11 and production thereof | |
| JPH0359005B2 (en) | ||
| JPH0348133B2 (en) | ||
| JPS63295416A (en) | Compound shown by ybalzn9o12 and having hexagonal lamellar structure and its production | |
| JPS63295429A (en) | Compound shown by lugazn5o8 and having hexagonal lamellar structure and its production | |
| JPS63277516A (en) | Compound having hexagonal layer structure expressed by lualzn7o10 and production thereof | |
| JPH0435410B2 (en) | ||
| JPS63210019A (en) | Compound having laminar structure of hexagonal crystal system expressed by scgazn4o7 and its production |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |