JPS63295065A - プラズマ加工装置 - Google Patents

プラズマ加工装置

Info

Publication number
JPS63295065A
JPS63295065A JP12696287A JP12696287A JPS63295065A JP S63295065 A JPS63295065 A JP S63295065A JP 12696287 A JP12696287 A JP 12696287A JP 12696287 A JP12696287 A JP 12696287A JP S63295065 A JPS63295065 A JP S63295065A
Authority
JP
Japan
Prior art keywords
plasma
torches
power source
torch
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12696287A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0366069B2 (enExample
Inventor
Akio Komatsu
秋男 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Electric Co Ltd
Original Assignee
Origin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Origin Electric Co Ltd filed Critical Origin Electric Co Ltd
Priority to JP12696287A priority Critical patent/JPS63295065A/ja
Publication of JPS63295065A publication Critical patent/JPS63295065A/ja
Publication of JPH0366069B2 publication Critical patent/JPH0366069B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Arc Welding Control (AREA)
JP12696287A 1987-05-26 1987-05-26 プラズマ加工装置 Granted JPS63295065A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12696287A JPS63295065A (ja) 1987-05-26 1987-05-26 プラズマ加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12696287A JPS63295065A (ja) 1987-05-26 1987-05-26 プラズマ加工装置

Publications (2)

Publication Number Publication Date
JPS63295065A true JPS63295065A (ja) 1988-12-01
JPH0366069B2 JPH0366069B2 (enExample) 1991-10-16

Family

ID=14948207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12696287A Granted JPS63295065A (ja) 1987-05-26 1987-05-26 プラズマ加工装置

Country Status (1)

Country Link
JP (1) JPS63295065A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830784A (en) * 1993-05-26 1998-11-03 Semiconductor Energy Laboratory Company, Ltd. Method for producing a semiconductor device including doping with a group IV element
US5962871A (en) * 1993-05-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6566681B2 (en) 2001-07-19 2003-05-20 International Business Machines Corporation Apparatus for assisting backside focused ion beam device modification
US7192817B2 (en) 1997-06-11 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830784A (en) * 1993-05-26 1998-11-03 Semiconductor Energy Laboratory Company, Ltd. Method for producing a semiconductor device including doping with a group IV element
US5962871A (en) * 1993-05-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6160279A (en) * 1993-05-26 2000-12-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor device including doping with a catalyst that is a group IV element
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6924506B2 (en) 1993-05-26 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having channel formation region comprising silicon and containing a group IV element
US7192817B2 (en) 1997-06-11 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6566681B2 (en) 2001-07-19 2003-05-20 International Business Machines Corporation Apparatus for assisting backside focused ion beam device modification

Also Published As

Publication number Publication date
JPH0366069B2 (enExample) 1991-10-16

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