JPS63289923A - Crystal growth method for compound semiconductor - Google Patents
Crystal growth method for compound semiconductorInfo
- Publication number
- JPS63289923A JPS63289923A JP12373087A JP12373087A JPS63289923A JP S63289923 A JPS63289923 A JP S63289923A JP 12373087 A JP12373087 A JP 12373087A JP 12373087 A JP12373087 A JP 12373087A JP S63289923 A JPS63289923 A JP S63289923A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- compound semiconductor
- growth
- light
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 150000001875 compounds Chemical class 0.000 title claims abstract description 25
- 238000002109 crystal growth method Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 7
- 238000006303 photolysis reaction Methods 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 20
- 238000004140 cleaning Methods 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 14
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、化合物半導体の結晶成長方法に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a method for growing compound semiconductor crystals.
（従来の技術）
■−■族あるいは■−■族化合物半導体を有機金属気相
成長法（ＭＯＣＶＤ）および分子線エピタキシャル成長
法または光を基板および原料ガスに照射し成長を行なう
光励起気相成長法を用いて、化合物半導体基板上にエピ
タキシャル成長させる際、エピタキシャル成長膜を高品
質化するためには、基板表面の清浄化は必要不可欠な技
術である。有機洗浄と酸処理といった成長前の基板処理
のみでは、例えば基板がＧａＡｓ半導体クエーりの場合
ＧａおよびＡｓの酸化物等は完全に除去されず、基板／
成長層界面での結晶性が劣化し、高品質なエピタキシャ
ル層が得られない。■−■族化合物半導体であるＺｎ５
ｅをＧ ａ Ａ ｓ基板上に成長させる場合を例にとる
と、基板表面にＧａおよびＡｓの酸化物が存在すると、
成長層であるＺｎ５ｅ層の結晶性が劣化しＧａ、Ａｓｏ
ＺｎＳｅ層への拡散が助長される。基板表面の酸化物除
去等の基板表面清浄化法としては、主として水素ガス等
の還元性ガス雰囲気や基板構成元素の内蒸気圧の高い元
素を含むガス雰囲気で基板を高温に加熱するという方法
が従来主に用いられて来た。ＧａＡｓ基板を例にとると
、ＭＯＣＶＤ法においては、基板を水素ガスあるいはア
ルシン（ＡｓＨ３）ガス雰囲気中で、ＭＢＥ法において
は、Ａｓビーム照射下で基板を７００℃以上に加熱する
ことによって基板表面清浄化を行なっている。しかしこ
の様に基板を高温に熱処理すると、確かに基板表面の酸
化物を除去できるが、基板表面に熱変成層が生じ、より
高品質なエピタキシャル成長膜を得ることが難かしい。(Prior art) ■-■ group or ■-■ group compound semiconductors are grown by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxial growth, or photo-excited vapor phase epitaxy in which a substrate and source gas are irradiated with light. When performing epitaxial growth on a compound semiconductor substrate using a compound semiconductor substrate, cleaning the substrate surface is an essential technique in order to improve the quality of the epitaxially grown film. If the substrate is only treated with organic cleaning and acid treatment before growth, for example, if the substrate is a GaAs semiconductor, oxides of Ga and As, etc. will not be completely removed, and the substrate/
Crystallinity at the interface of the grown layer deteriorates, making it impossible to obtain a high-quality epitaxial layer. Zn5, a ■-■ group compound semiconductor
Taking the case of growing e on a GaAs substrate as an example, if oxides of Ga and As exist on the substrate surface,
The crystallinity of the Zn5e layer, which is a growth layer, deteriorates and Ga, Aso
Diffusion into the ZnSe layer is encouraged. The main method for cleaning the substrate surface, such as removing oxides from the substrate surface, is to heat the substrate to a high temperature in an atmosphere of a reducing gas such as hydrogen gas or a gas atmosphere containing elements with high internal vapor pressure among the constituent elements of the substrate. It has traditionally been mainly used. Taking a GaAs substrate as an example, in the MOCVD method, the substrate surface is cleaned in a hydrogen gas or arsine (AsH3) gas atmosphere, and in the MBE method, the substrate is heated to 700°C or higher under As beam irradiation. is undergoing transformation. However, although it is true that oxides on the substrate surface can be removed by heat-treating the substrate at high temperatures in this manner, a thermally altered layer is generated on the substrate surface, making it difficult to obtain a higher quality epitaxially grown film.
また、半導体レーザの様に、混晶比や伝導型およびキャ
リア濃度の異なる化合物半導薄膜を多層に成長した後、
成長室から大気中に取り出し、フォトリソグラフィー１
等によりパターニングを行ない再び成長室内にてエピタ
キシャル成長を行なうプロセスが必要なデバイス等にお
いては、再成長の前に基板を高温に加熱すると、熱拡散
により混晶比やキャリア濃度の分布に変化が生じ、高性
能なデバイスが得られない。In addition, like semiconductor lasers, after growing multiple layers of compound semiconductor thin films with different mixed crystal ratios, conductivity types, and carrier concentrations,
Removed from the growth chamber to the atmosphere and photolithography 1
For devices, etc. that require a process of patterning (e.g., epitaxial growth in a growth chamber), heating the substrate to a high temperature before regrowth causes changes in the mixed crystal ratio and carrier concentration distribution due to thermal diffusion. High performance devices cannot be obtained.
さらにＭを含む混晶化合物半導体、例えばＡＬｘＧａｌ
−ｘＭ等においては通常の熱処理ではｎの酸化物を完全
に除去する事が出来ない。Furthermore, a mixed crystal compound semiconductor containing M, such as ALxGal
-xM etc., the n oxide cannot be completely removed by normal heat treatment.
一方高温の基板表面清浄化方法における問題点を解決す
る方法として水素ガスのマイクロ波放電分解により生成
された水素ラジカルを用い低温で基板表面清浄化を行な
う方法が提案（Ｓ、Ｏｄａ、ｅｔａｌ。On the other hand, as a method to solve the problems in high-temperature substrate surface cleaning methods, a method has been proposed in which substrate surfaces are cleaned at low temperatures using hydrogen radicals generated by microwave discharge decomposition of hydrogen gas (S, Oda, etal.
１７ｔｈ ＳＳＤＭ ｐＩ）２３７−２４０（１９８５
）されているが、低温であるため、水素ラジカルのみで
は反応性が低く、十分な基板表面清浄化が行なわれてい
るとは言い難い。17th SSDM pI) 237-240 (1985
) However, due to the low temperature, the reactivity of hydrogen radicals alone is low, and it cannot be said that sufficient cleaning of the substrate surface is achieved.
（発明が解決しようとする問題点）
以上述べた様に従来の高温加熱による基板表面清浄化方
法では、基板表面に熱変成層が形成される。また混晶比
およびキャリア濃度分布が所望の分布がずれるという問
題や、Ａｊを含む混晶化合物半導体のＭ酸化物の除去が
できないという問題があった。(Problems to be Solved by the Invention) As described above, in the conventional substrate surface cleaning method using high temperature heating, a thermally altered layer is formed on the substrate surface. Further, there are problems in that the mixed crystal ratio and carrier concentration distribution deviate from desired distributions, and in that M oxide in a mixed crystal compound semiconductor containing Aj cannot be removed.
本発明は、より高品質なエピタキシャル成長膜を得るた
めに、よシ低温においても基板表面の清浄化が行なうこ
との出来る化合物半導体基板の表面清浄化法を用いた化
合物半導体の結晶成長を提供することにある。The present invention provides compound semiconductor crystal growth using a compound semiconductor substrate surface cleaning method that allows cleaning of the substrate surface even at very low temperatures, in order to obtain higher quality epitaxially grown films. It is in.
（問題点を解決するだめの手段）
上記目的を達成するために、本発明による化合物半導体
の結晶成長方法を以下に示す。(Another Means to Solve the Problems) In order to achieve the above object, a method for growing compound semiconductor crystals according to the present invention will be described below.
成長前に水素ガスのマイク波放電分解等の放電分解ある
いはＳＯＲ光等による光解離により生成した水素ラジカ
ル雰凹気中に基板を置き、かつ該基板に対して光を照射
し、基板表面の清浄化を行なう。しかる後に該基板上に
ＭＯＣＶＤ 、ハイドライドＶＰＥ、ＭＢＥや光励起気
相成長等の気相成長法により化合物半導体の結晶成長を
行なう。Before growth, the substrate is placed in a hydrogen radical atmosphere generated by discharge decomposition such as microwave discharge decomposition of hydrogen gas or photodissociation by SOR light, etc., and the substrate is irradiated with light to clean the substrate surface. . Thereafter, compound semiconductor crystals are grown on the substrate by a vapor phase growth method such as MOCVD, hydride VPE, MBE, or photoexcited vapor phase growth.
（作用）
上述した本発明の様な基板表面清浄化方法を用いた化合
物半導体の結晶成長方法においては、水素ラジカルによ
る還元反応が光照射により促進され、低温でも効率良く
基板表面上の酸化物や汚染物質が除去され、高品質なエ
ピタキシャル膜を得ることが可能となる。(Function) In the compound semiconductor crystal growth method using the substrate surface cleaning method of the present invention described above, the reduction reaction by hydrogen radicals is promoted by light irradiation, and oxides and oxides on the substrate surface are efficiently removed even at low temperatures. Contaminants are removed, making it possible to obtain a high quality epitaxial film.
（実施例）
第１図は、本発明の方法を実施するための成長系の概略
図である。この図において成長容器（１０１）内には、
基板（１０２泗！サセプタ（１０３）上に配置されてい
る。サセプタ（１０３）はヒータ（図示せず）により加
熱されておシサセプタ（１０３）上の基板（１０２）は
所定の温度に設定される。成長開始前に基板温度を所定
の温度に設定した後に、成長室（１０１）内にガス導入
口（１０９）よシマイクロ波放電管（１）２）内で生成
された水素ラジカルを導入し、同時にエキシマレーザ（
１０８）より ＡｒＦ エキシマレーザ光（波長１９３
ｎｍ）を反射ミラー（１０７）および光導入窓（１０６
）を介し、成長室（１０１）内の基板（１０３）に照射
し、基板表面の清浄化を行なう。しかる後にガス導入口
（１０９）を閉め水素ラジカル導入をとめ、またエキシ
マレーザ光の照射をやめ、成長容器（１０１）内を排気
する。次に基板温度を所定の温度に設定し、ガス導入口
（１０４）よシ原料ガスを、またガス導入口（１０５）
よシ水素ガスを成長室内に導入し、排気系（１）４Ｘ）
排気速度を調節し所定の圧力に設定すると同時に再びＡ
ｒＦエキシマレーザ光を基板（１０２）に照射し成長を
行なう。(Example) FIG. 1 is a schematic diagram of a growth system for carrying out the method of the present invention. In this figure, inside the growth container (101),
The substrate (102) is placed on a susceptor (103).The susceptor (103) is heated by a heater (not shown), and the substrate (102) on the susceptor (103) is set to a predetermined temperature. After setting the substrate temperature to a predetermined temperature before starting growth, hydrogen radicals generated in the microwave discharge tubes (1) and 2) are introduced into the growth chamber (101) through the gas inlet (109). , and at the same time excimer laser (
108) ArF excimer laser light (wavelength 193
nm) through a reflecting mirror (107) and a light introduction window (106).
) to the substrate (103) in the growth chamber (101) to clean the substrate surface. Thereafter, the gas inlet (109) is closed to stop the introduction of hydrogen radicals, the irradiation of excimer laser light is stopped, and the inside of the growth container (101) is evacuated. Next, set the substrate temperature to a predetermined temperature, and feed the raw material gas through the gas inlet (104) and the gas inlet (105).
Introduce hydrogen gas into the growth chamber and exhaust system (1) 4X)
Adjust the pumping speed and set it to the specified pressure, and at the same time press A again.
Growth is performed by irradiating the substrate (102) with rF excimer laser light.
この様な成長系を用いて行なった面方位（１００）Ｇａ
Ａｓ基板上へのＺｎＳ ｅのエピタキシャル成長につい
て以下に記す。Surface orientation (100) Ga obtained using such a growth system
The epitaxial growth of ZnSe on an As substrate will be described below.
原料ガスには、■族原料としてジメチル亜鉛（ＤＭＺ）
を、また■族原料としてジメチルセレン（ＤＭＳｅ）を
用いた。また、それらのキャリアガスには水素ガスを用
いた。まず最初にガス導入口（１）３）よシ放電管（１
）２）内へ水素ガスを導入する。導入された水素ガスは
ガス導入口（１０９）を介し排気系（１）４）より排気
した。排気系（１）４）の排気速度を調節し、放電管（
１）２）内の圧力を１０−２Ｔｏｒｒに設定し九後、マ
イクロ波電源（１）０）よりマイクロ波電力を導波管（
１）１）を介し、放電管（１）２）に供給し、マイクロ
波放電分解により水素ガスを励起し生成された水素ラジ
カルを成長膜！（１０１）内へ導入する。それと同時に
エキシマレーザ（１０８）よｌ） ＡｒＦエキシマレー
ザ光を反射ミラー（１０７）、光導入窓（１０６）を介
し、（ＣｒＯドープＳＩ ＧａＡｓ基板（面方位（１０
０）Ｘ１０２′ｙＸ２０分間照射し、基板表面の清浄化
を行なった。The raw material gas contains dimethyl zinc (DMZ) as a group ■ raw material.
In addition, dimethyl selenium (DMSe) was used as the Group Ⅰ raw material. Furthermore, hydrogen gas was used as the carrier gas. First, open the gas inlet (1) 3) and the discharge tube (1).
)2) Introduce hydrogen gas into the interior. The introduced hydrogen gas was exhausted from the exhaust system (1) 4) through the gas inlet (109). Adjust the exhaust speed of the exhaust system (1) 4) and discharge the discharge tube (
1) After setting the pressure in 2) to 10-2 Torr, microwave power is supplied from the microwave power source (1)0) to the waveguide (
1) Supplied through 1) to the discharge tube (1) 2), the hydrogen gas is excited by microwave discharge decomposition, and the generated hydrogen radicals are used to grow the film! (101). At the same time, the ArF excimer laser beam (from the excimer laser (108)) is passed through the reflecting mirror (107) and the light introduction window (106) to the (CrO-doped SI GaAs substrate (plane orientation (10
0)X102'yX irradiation for 20 minutes to clean the substrate surface.
照射エネルギーは、基板表面上でＩ ＱｒｒＪ ／ｃｄ
／ｐｕ ｌ ｓｅ繰シ返し周波数は８０ ｐｐｓに設定
した。また基板温度は、４００℃に設定した。ＡｒＦエ
キシマレーザ照射終了後、ガス導入口（１０９）を閉め
、成長容器（１０１）内を排気する。次にガス導入口（
１０５）より水素力ｘｔ−２００８ＣＣＭ、 ｉ ；’
ｈカス導入口（１０４）ヨｐ ＤＭＺヲ７ Ｘ Ｉ Ｑ
ｍｏｌ ／ｍｉｎオよび水素ガ、Ｘ ３９８ＣＣＭ
。The irradiation energy is I QrrJ /cd on the substrate surface.
/pulse repetition frequency was set to 80 pps. Further, the substrate temperature was set at 400°C. After the ArF excimer laser irradiation is completed, the gas inlet (109) is closed and the inside of the growth container (101) is evacuated. Next, the gas inlet (
105) From hydrogen force xt-2008CCM, i ;'
h Waste inlet (104) DMZ 7 X I Q
mol/min and hydrogen gas, X 398CCM
.
ＤＭＳｅを１．４ Ｘ １０ ｍｏｌ ／ｍｉｎおよ
び水素ガス１）００５ＣＣ成長容器（１０１）内へ導入
すると同時に、基板（１０２）にＡｒＦエキシマレーザ
光を反射ミラー（１０７）、光導入窓（１０６）を介し
照射しＺ’ｎＳｅの成長を行なった。成長圧力は、排気
系（１）４）１７）排気速度を調節し５０Ｔｏｒｒとし
、基板温度は４００℃に設定した。DMSe at 1.4 x 10 mol/min and hydrogen gas 1) At the same time, a mirror (107) that reflects ArF excimer laser light and a light introduction window (106) are introduced into the substrate (102). The growth of Z'nSe was carried out by irradiation. The growth pressure was set at 50 Torr by adjusting the exhaust system (1) 4) 17) exhaust speed, and the substrate temperature was set at 400°C.
またＡｒＦエキシマレーザ光の照射強度は、基板表面で
１ ｍＪ ／ｄ／ ｐｕｌＳｅｓ繰り返し周波数はｓ
ｏ ｐｐｓとした。The irradiation intensity of the ArF excimer laser beam is 1 mJ/d/pulSes on the substrate surface, and the repetition frequency is s.
o pps.
この様にして成長させたＺｎ５ｅ膜の結晶性を、Ｘ線２
結晶法および４．２にフォトルミネセンス測定（Ｈｅ−
Ｃｄレーザ光励起）Ｋより評価したところ基板表面清浄
化の際に、エキシマレーザを照射せず、前記実施例で示
したのと同じ成長条件で成長したＺｎ５ｅ膜および基板
表面清浄化をせず前記実施例で示したのと同じ成長条件
で成長したＺｎ５ｅ膜にくらべ、本実施例で得られたＺ
ｎ８ｅ膜は、Ｘ線回折パターンの半値幅はせまく、また
自由励起子発光強度も強かった。この様に、水素ラジカ
ル雰囲気中で基板に対してエキシマレーザ光を照射する
ことにより、高品質なＺｎ５ｅ膜が得られた。The crystallinity of the Zn5e film grown in this way was investigated by
Crystal method and photoluminescence measurement (He-
When cleaning the substrate surface, the Zn5e film was grown under the same growth conditions as shown in the above example, without irradiating the excimer laser, and when the substrate surface was cleaned, the Zn5e film was Compared to the Zn5e film grown under the same growth conditions as shown in the example, the Zn5e film obtained in this example
In the n8e film, the half width of the X-ray diffraction pattern was narrow and the free exciton emission intensity was strong. In this manner, a high quality Zn5e film was obtained by irradiating the substrate with excimer laser light in a hydrogen radical atmosphere.
なお本発明は、上述した実施例に限定されるものでなく
、その要旨を逸脱しない範囲で変形して実施することが
出来る。成長する膜は、Ｚｎ５ｅに限らず他の■−■族
や■−■族化合物半導体でも良い。また基板はＧａＡｓ
基板は他の面方位でも良く、その伝導型はｐ型、ｎ型、
半絶縁性いずれモも良い、さらに他の■−■族や■−■
族化合物半導体を基板に用いても良い。照射する光はＡ
ｒＦエキシマレーザ光に限らず、ＫｒＦ 、 ＸｅＦ等
他のエキシマレーザ光や、低圧、高圧および超高圧水銀
ランプ、Ｘｅ−Ｈｇランプ、重水素ランプ、希ガスマイ
クロ波放電による輝線等信の光源でも良い。水素ラジカ
ルの生成は、放電分解に限らずＳＯＲ党等による光解離
を用いても良い。Note that the present invention is not limited to the embodiments described above, and can be modified and implemented without departing from the gist thereof. The film to be grown is not limited to Zn5e, but may be other semiconductors of the ■-■ group or the ■-■ group. Also, the substrate is GaAs
The substrate may have other plane orientations, and its conductivity type may be p-type, n-type,
Semi-insulating materials are also good, and other ■−■ group and ■−■
A group compound semiconductor may be used for the substrate. The irradiated light is A
The light source is not limited to rF excimer laser light, but may also be other excimer laser light such as KrF or XeF, low-pressure, high-pressure, or ultra-high pressure mercury lamps, Xe-Hg lamps, deuterium lamps, or emission line light sources using rare gas microwave discharge. . The generation of hydrogen radicals is not limited to discharge decomposition, and photodissociation by SOR or the like may also be used.
本発明によれば、成長前に水素ラジカル雰囲気中におい
て基板に光を照射し低温で基板表面を１青浄化した後に
結晶を成長させている為、高品質なエピタキシャル成長
膜を得ることが可能となった。According to the present invention, since the substrate is irradiated with light in a hydrogen radical atmosphere and the substrate surface is purified by 1 blue at a low temperature before crystal growth, it is possible to obtain a high quality epitaxially grown film. Ta.
第１図は本発明の一実施例を行なうための成長系の概略
図である。
（１０１） ・・・成長容器、（１０２）−・・基板、
（１０３）・・・サセプタ、（１０４）・・・ガス導入
口、（１０５）・・・ガス導入口、（１０６）・・・光
導入窓、（１０７）・・・反射ミラー、（１０８）・・
・エキシマレーザ、（１０９）・・・ガス導入口、（１
）０）・・・マイクロ波電源、（１）１）・・・導波管
、（１）２）・・・放電管、（１）３）・・・ガス導入
口、（１）４）・・・排気系。FIG. 1 is a schematic diagram of a growth system for carrying out an embodiment of the present invention. (101)...Growth container, (102)-...Substrate,
(103)...Susceptor, (104)...Gas inlet, (105)...Gas inlet, (106)...Light introduction window, (107)...Reflection mirror, (108)・・・
・Excimer laser, (109)...Gas inlet, (1
)0)...Microwave power supply, (1)1)...Waveguide, (1)2)...Discharge tube, (1)3)...Gas inlet, (1)4) ...Exhaust system.
Claims (3)
同種または異種の化合物半導体を結晶成長させる際、成
長前に水素ガスの放電分解あるいは、光解離により生成
された水素ラジカル雰囲気中で、前記基板に対して光を
照射し、基板表面を清浄化した後に、前記気相成長法に
より基板上に化合物半導体の結晶成長を行なうことを特
徴とする化合物半導体の結晶成長方法。(1) When crystal-growing a compound semiconductor of the same type or different type as the substrate by vapor phase growth on a compound semiconductor substrate, before growth, in an atmosphere of hydrogen radicals generated by discharge decomposition of hydrogen gas or photodissociation, A method for growing compound semiconductor crystals, comprising irradiating the substrate with light to clean the surface of the substrate, and then growing crystals of the compound semiconductor on the substrate by the vapor phase growth method.
導体であることを特徴とする特許請求の範囲第１項記載
の化合物半導体の結晶成長方法。(2) The method for growing crystals of a compound semiconductor according to claim 1, wherein the substrate is a III-V group or II-VI group compound semiconductor.
であることを特徴とする特許請求の範囲第１項又は第２
項記載の化合物半導体の結晶成長方法。(3) Claim 1 or 2, wherein the light has a wavelength of 350 nm or less.
A method for growing crystals of a compound semiconductor as described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12373087A JPS63289923A (en) | 1987-05-22 | 1987-05-22 | Crystal growth method for compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12373087A JPS63289923A (en) | 1987-05-22 | 1987-05-22 | Crystal growth method for compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63289923A true JPS63289923A (en) | 1988-11-28 |
Family
ID=14867931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12373087A Pending JPS63289923A (en) | 1987-05-22 | 1987-05-22 | Crystal growth method for compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63289923A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613333A (en) * | 1992-02-18 | 1994-01-21 | Nec Corp | Thermal cvd method |
-
1987
- 1987-05-22 JP JP12373087A patent/JPS63289923A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613333A (en) * | 1992-02-18 | 1994-01-21 | Nec Corp | Thermal cvd method |
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