JPS63289726A - Manufacture of compound superconductive thin film - Google Patents
Manufacture of compound superconductive thin filmInfo
- Publication number
- JPS63289726A JPS63289726A JP62124613A JP12461387A JPS63289726A JP S63289726 A JPS63289726 A JP S63289726A JP 62124613 A JP62124613 A JP 62124613A JP 12461387 A JP12461387 A JP 12461387A JP S63289726 A JPS63289726 A JP S63289726A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- compound
- layer
- producing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 150000001875 compounds Chemical class 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 5
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 4
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 4
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 4
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 4
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims abstract 8
- 239000002356 single layer Substances 0.000 claims abstract 2
- 239000002887 superconductor Substances 0.000 claims description 9
- 229910052788 barium Inorganic materials 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 229910002480 Cu-O Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 125000004122 cyclic group Chemical group 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は、化合物超電導薄膜の作製方法に係り、特に、
酸化物系の化合物超電導薄膜の作製方法に関する。[Detailed Description of the Invention] [Objective of the Invention (Industrial Application Field) The present invention relates to a method for producing a compound superconducting thin film, and in particular,
This invention relates to a method for producing an oxide-based compound superconducting thin film.
（従来の技術）
最近９組成がＹ−Ｂａ−Ｃｕ−０などで表わされる酸化
物系化合物超電導体が注目されている。(Prior Art) Recently, oxide-based compound superconductors whose composition is represented by Y--Ba--Cu-0, etc., have been attracting attention.
これら、酸化物系化合物超電導体の多くは、臨界温度が
液体窒素温度以上である。このため、冷媒として高価で
扱い難い液体ヘリウムを使用する必要がなく、また冷却
系も大幅に簡略化できるので。Many of these oxide-based compound superconductors have a critical temperature equal to or higher than the liquid nitrogen temperature. Therefore, there is no need to use liquid helium, which is expensive and difficult to handle, as a refrigerant, and the cooling system can be significantly simplified.
超電導技術を飛躍的に発展させるものと期待されている
。It is expected that this will lead to dramatic advances in superconducting technology.
ところで、酸化物系化合物超電導体を集積回路等に応用
するには、この超電導体を対象にした薄膜作製技術の確
立が不可欠である。現在、公表されている唯一の薄膜作
製方法は９組成がＹ−Ｂａ−Ｃｕ−０などで表わされる
ターゲットを用いてＡｒ−０□雰囲気中でスパッタ法で
作製する方法である。しかＬ、この方法では、ターゲッ
トの組成とは異なる組成の薄膜、つまり望む組成の薄膜
が得られない問題があった。By the way, in order to apply oxide-based compound superconductors to integrated circuits and the like, it is essential to establish thin film production technology for these superconductors. Currently, the only method for producing a thin film that has been published is a method in which the thin film is produced by sputtering in an Ar-0□ atmosphere using a target whose composition is Y--Ba--Cu-0 or the like. However, this method has the problem that a thin film having a composition different from that of the target, that is, a thin film having a desired composition cannot be obtained.
（発明が解決しようとする問題点） 上述の如く、今まで公表されている方法では。(Problem that the invention attempts to solve) As mentioned above, with the methods that have been published so far.
望む組成の化合物超電導薄膜を作製することが困難であ
った。It has been difficult to produce a compound superconducting thin film with a desired composition.
そこで本発明は、複雑な工程を伴わずに、しかも望む組
成の化合物超電導薄膜を極めて簡単に作製できる作製方
法を提供することを目的としている。Therefore, an object of the present invention is to provide a manufacturing method that can extremely easily manufacture a compound superconducting thin film having a desired composition without involving complicated steps.
［発明の構成］
（問題点を解決するための手段）
本発明では、基板上に組成が、Ｌ−バリウム−銅−酸素
（ただＬ、Ｌ＝イットリウム、エルビウム、ジスプロシ
ウム、サマリウム、ガドリニウム、ホルミウム、ネオジ
ム、イッテルビウム、ツリウム、ルテチウムの中から選
ばれた少なくとも１種）からなる酸化物系化合物超電導
薄膜を作製するに当り、基板上に上記り、バリウム、銅
の単体の各層もしくは上記Ｌ、バリウム、銅の酸化物の
各層を順次積層形成して所望の厚みの積層体を得た後、
上記積層体を酸素ガス雰囲気中で熱処理して酸化物系化
合物超電導体に変換するようにしている。[Structure of the Invention] (Means for Solving the Problems) In the present invention, the composition on the substrate is L-barium-copper-oxygen (only L, L=yttrium, erbium, dysprosium, samarium, gadolinium, holmium, In producing an oxide-based compound superconducting thin film consisting of at least one selected from neodymium, ytterbium, thulium, and lutetium, the above-described layers of barium and copper or the above-mentioned L, barium, After sequentially laminating each layer of copper oxide to obtain a laminate of desired thickness,
The laminate is heat-treated in an oxygen gas atmosphere to convert it into an oxide-based compound superconductor.
さらに詳しく述べると、各層の形成は、制御性の面から
スパッタ法で行なうことが望ましい。また、熱処理は、
８５０〜９５０℃で、２〜５０時間が望ましい。More specifically, each layer is preferably formed by sputtering from the viewpoint of controllability. In addition, heat treatment
Desirably, the temperature is 850-950°C for 2-50 hours.
（作用）
本発明作製方法では、酸化物系化合物超電導体を構成す
る元素の単体の層もしくはその酸化物の層を順次積層形
成して所望の厚みの積層体を形成Ｌ、この積層体を最終
的に酸化物系化合物超電導体に変換するようにしている
ので、上記各層を形成する時にその厚みを制御すること
によって所望とする組成の酸化物系化合物超電導薄膜を
作製することができる。したがって、臨界温度の高い薄
膜を容易に作製することが可能となる。(Function) In the production method of the present invention, layers of single elements constituting an oxide-based compound superconductor or layers of their oxides are sequentially laminated to form a laminate having a desired thickness L, and this laminate is finalized. Therefore, by controlling the thickness of each of the above layers when forming them, an oxide-based compound superconducting thin film having a desired composition can be produced. Therefore, it becomes possible to easily produce a thin film with a high critical temperature.
（実施例）
第１図および第２図は１本発明作製方法の実施に使用さ
れたスパッタ装置の概略構成を示している。まず、この
スパッタ装置から説明する。(Example) FIGS. 1 and 2 show a schematic configuration of a sputtering apparatus used to implement the manufacturing method of the present invention. First, this sputtering apparatus will be explained.
第１図中１は真空槽を示Ｌ、この真空槽１内には基板２
を支持する基板ホルダー３が配置されている。基板ホル
ダー３に対向する位置には絶縁材で形成された仕切り壁
４が配置されており、この仕切り壁４の前記基板ホルダ
ー３に対向する位置には円形の窓５が形成されている。In Fig. 1, 1 indicates a vacuum chamber L, and inside this vacuum chamber 1 is a substrate 2.
A substrate holder 3 is arranged to support the substrate. A partition wall 4 made of an insulating material is arranged at a position facing the substrate holder 3, and a circular window 5 is formed at a position of the partition wall 4 facing the substrate holder 3.
そして、仕切り壁４を境にして反乱板ホルダー側には第
２図にも示すように、窓５の径より小径で円板状に形成
されたターゲット６ａ、６ｂ、６ｃを保持するターゲッ
トホルダー７ａ、７ｂ、７ｃ （ただしターゲットホル
ダー７０は図示せず。）が同一円周上に所定の開き角で
配置されている。これらターゲットホルダー７ａ、７ｂ
、７ｃは絶縁性の支持アーム８を介して回転自在な輔９
の一端部に連結されている。軸９は、その他端側か真空
槽１の壁を気密に貫通して外部へ突出しており、また回
転中心は何れかのターゲットを選択的に窓５に臨ませ得
る位置に設定されている。軸９および支持アーム８の内
部には導体が埋め込まれており、この導体は各ターゲッ
トホルダー７ａ、’７ｂ、７ｃに電気的に接続されてい
る。軸９の外部に突出している部分の外周には導体に接
続された導電リング１０と歯車１１とが装着されている
。導電リング１０は摺動接触子を介して電源１２に接続
されている。一方、歯車１１は歯車１３を介してステッ
プモータ１４の回転軸に連結されている。そして。As shown in FIG. 2, on the side of the repulsion plate holder with the partition wall 4 as a boundary, there is a target holder 7a holding disk-shaped targets 6a, 6b, and 6c with a diameter smaller than the diameter of the window 5. , 7b, and 7c (however, the target holder 70 is not shown) are arranged on the same circumference at a predetermined opening angle. These target holders 7a, 7b
, 7c is a support 9 that is rotatable via an insulating support arm 8.
is connected to one end of the The other end of the shaft 9 hermetically penetrates the wall of the vacuum chamber 1 and protrudes to the outside, and the center of rotation is set at a position that allows any target to selectively face the window 5. A conductor is embedded inside the shaft 9 and the support arm 8, and this conductor is electrically connected to each target holder 7a, '7b, 7c. A conductive ring 10 connected to a conductor and a gear 11 are attached to the outer periphery of the portion of the shaft 9 that projects outside. Conductive ring 10 is connected to a power source 12 via sliding contacts. On the other hand, the gear 11 is connected to the rotating shaft of a step motor 14 via a gear 13. and.
ステップモータ１４の回転角制御および電源１２のオン
、オフ制御は制御器１５によって行われる。The rotation angle control of the step motor 14 and the on/off control of the power supply 12 are performed by a controller 15.
制御器１５は、タイマとモータ駆動回路とを組み合ワせ
たもので、動作指令Ｓ１が与えられると。The controller 15 is a combination of a timer and a motor drive circuit, and when an operation command S1 is given.
指定された期間だけ電源１２を投入するとともに。In addition to turning on the power supply 12 for a specified period of time.
この期間内において各ターゲット７ａ、７ｂ。Each target 7a, 7b within this period.
７ｃが窓５に臨んでいる時間の比が指定された時間比と
なるようにステップモータ１４を駆動する。The step motor 14 is driven so that the ratio of the time that the window 7c faces the window 5 becomes the designated time ratio.
なお、第１図中１６は真空槽１内を排気する排気系を示
Ｌ、１７は真空槽１内に作用ガスとしてのアルゴンガス
を導入する不活性ガス供給系を示Ｌ、１９は真空計を示
している。In Fig. 1, 16 indicates an exhaust system L for evacuating the inside of the vacuum chamber 1, 17 indicates an inert gas supply system L for introducing argon gas as a working gas into the vacuum chamber 1, and 19 indicates a vacuum gauge. It shows.
このように構成されたスパッタ装置を用い１次のように
して化合物超電導薄膜を作製した。すなわち、基板２と
して５ｉ０２板を用いた。またターゲット６ａ、６ｂ、
６ｃとしてイツトリウムの薄い板、バリウムの薄い阪お
よび銅板をそれぞれ用い、これらターゲットが窓５に臨
んでいる時間比が０．５：２：３となるようにタイマを
設定Ｌ、１０’ ｔｏｒｒのアルゴンガス雰囲気中でス
パッタリングを行なって５ｉ０２基板上に上記ターゲッ
ト構成部材の層が順次二進するまで積層された合計９層
からなる厚さ２μｍの積層体を形成した。次に。A compound superconducting thin film was produced in a first-order manner using the sputtering apparatus configured as described above. That is, a 5i02 board was used as the substrate 2. Also targets 6a, 6b,
A thin yttrium plate, a thin barium plate, and a copper plate were used as 6c, and the timer was set so that the time ratio of these targets facing window 5 was 0.5:2:3. Sputtering was performed in a gas atmosphere to form a laminate having a thickness of 2 μm and consisting of a total of 9 layers in which the layers of the target component were sequentially stacked until binary on the 5i02 substrate. next.
スパッタ装置から基板を取出Ｌ、これを酸素ガスがｌ、
ｆｆ／ｍｉｎの割合で通流する雰囲気中で９００ ℃で
２時間に亙って熱処理して薄膜形成工程を終了した。Take out the substrate from the sputtering equipment, and fill it with oxygen gas.
The thin film forming process was completed by heat treatment at 900° C. for 2 hours in an atmosphere flowing at a rate of ff/min.
このようにして得られた薄膜をＸ線分光分析したところ
、Ｙ１Ｂａ２ Ｃｕ３０？−Ｙの組成式を持つ化合物超
電導体が形成されていｇことが確認された。また、上記
のようにして作製された薄膜の超電導特性を調べたとこ
ろ、臨界温度はＴｃ、ｏｎｌｏｏ Ｋ 、 Ｔｃ、ｅｎ
ｄ９３にであった。一方、比較のために前述した時間比
を１ ：ｌ ：ｌに設定して作製された薄膜について
調べたところＴｃ、ｏｎは７０Ｋ 。X-ray spectroscopic analysis of the thin film thus obtained revealed that Y1Ba2 Cu30? It was confirmed that a compound superconductor having the composition formula -Y was formed. In addition, when the superconducting properties of the thin film produced as described above were investigated, the critical temperature was Tc, onloo K, Tc, en
It was on d93. On the other hand, for comparison, we investigated a thin film prepared by setting the above-mentioned time ratio to 1:l:l, and found that Tc,on was 70K.
Ｔｃ、ｅｎｄ５３にであった。Tc was at end53.
このように上述した作製方法であると、積層体形成時に
各層の厚みを制御でき、この結果９組成をコントロール
できるので、高い臨界温度を示す薄膜を容易に作製する
ことができる。With the above-described manufacturing method, the thickness of each layer can be controlled during the formation of the laminate, and as a result, the composition can be controlled, so a thin film exhibiting a high critical temperature can be easily manufactured.
なお１本発明は上述した実施例に限定されるものではな
い。すなわち、イツトリウムを、エルビウム、ジスプロ
シウム、サマリウム、ガドリニウム、ホルミウム、ネオ
ジム、イッテルビウム、ツリウム、ルテチウムの中から
選ばれた少なくとも１種に置き代えてもよい。また、こ
れらの酸化物で形成されたターゲットを用いるとともに
バリウムの酸化物および酸化銅で形成されたターゲット
を用いるようにしてもよい。また、積層体を形成すると
き各層の厚みは１組成によって異なるが。Note that the present invention is not limited to the embodiments described above. That is, yttrium may be replaced with at least one selected from erbium, dysprosium, samarium, gadolinium, holmium, neodymium, ytterbium, thulium, and lutetium. In addition to using targets made of these oxides, targets made of barium oxide and copper oxide may also be used. Furthermore, when forming a laminate, the thickness of each layer varies depending on the composition.
引き続いて行なう熱処理時の酸素の浸透性を考慮に入れ
ると一層の厚みの最大は１μｍ以下に抑えることが望ま
しく、また最小は２０人程度とすることが望ましい。ま
た、スパッタリングを行なうときの雰囲気ガスとしては
、アルゴンガスに限らず。Taking into account the permeability of oxygen during the subsequent heat treatment, it is desirable that the maximum thickness of each layer be kept to 1 μm or less, and the minimum thickness is preferably about 20. Furthermore, the atmospheric gas used during sputtering is not limited to argon gas.
他の不活性ガスを用いてもよい。また、積層体の形成は
、スパッタ法に限らず真空蒸若法で形成してもよいが、
膜厚制御および時間制御の面からスパッタ法か望ましい
。また、熱処理は、酸素ガス雰囲気中で８５０〜９５０
℃、 ２〜５０時間であればよい。Other inert gases may also be used. Furthermore, the formation of the laminate is not limited to the sputtering method, but may also be formed by the vacuum evaporation method.
Sputtering is preferable from the viewpoint of film thickness control and time control. In addition, heat treatment is performed at 850 to 950 in an oxygen gas atmosphere.
℃ for 2 to 50 hours.
［発明の効果コ
以上述べたように９本発明によれば、酸化物系化合物超
電導体特有の高い臨界温度特性を持つ薄膜を容易に作製
できる化合物超電導薄膜の作製方法を提供できる。[Effects of the Invention] As described above, according to the present invention, it is possible to provide a method for producing a compound superconducting thin film that can easily produce a thin film having high critical temperature characteristics unique to oxide-based compound superconductors.
第１図は本発明作製方法の一実施例に用いたスパッタ装
置の概略構成図、第２図は第１図におけるＡ−Ａ線に沿
って矢印方向に見た図である。
２・・・基板、６ａ、６ｂ、６ｃ・・・ターゲット。FIG. 1 is a schematic diagram of a sputtering apparatus used in an embodiment of the manufacturing method of the present invention, and FIG. 2 is a view taken along line A--A in FIG. 1 in the direction of the arrow. 2...Substrate, 6a, 6b, 6c...Target.
Claims (5)
ットリウム、エルビウム、ジスプロシウム、サマリウム
、ガドリニウム、ホルミウム、ネオジム、イッテルビウ
ム、ツリウム、ルテチウムの中から選ばれた少なくとも
１種）からなる酸化物系化合物超電導薄膜を作製するに
当り、基板上に上記Ｌ、バリウム、銅の単体の各層もし
くは上記Ｌ、バリウム、銅の酸化物の各層を順次積層形
成して所望の厚みの積層体を得た後、上記積層体を酸素
ガス雰囲気中で熱処理して酸化物系化合物超電導体に変
換することを特徴とする化合物超電導薄膜の作製方法。(1) An oxide whose composition is L-barium-copper-oxygen (L = at least one selected from yttrium, erbium, dysprosium, samarium, gadolinium, holmium, neodymium, ytterbium, thulium, and lutetium) In producing a superconducting thin film based on a compound based compound, each of the single layers of L, barium, and copper or each layer of oxide of L, barium, and copper were sequentially laminated on a substrate to obtain a laminate with a desired thickness. A method for producing a compound superconducting thin film, characterized in that the laminate is then heat-treated in an oxygen gas atmosphere to convert it into an oxide-based compound superconductor.
成したものであることを特徴とする特許請求の範囲第１
項記載の化合物超電導薄膜の作製方法。(2) The laminate is formed by laminating each of the layers in multiple cycles.
A method for producing a compound superconducting thin film as described in .
ことを特徴とする特許請求の範囲第１項記載の化合物超
電導薄膜の作製方法。(3) The method for producing a compound superconducting thin film according to claim 1, wherein the thickness of each layer is in the range of 20 Å to 1 μm.
われることを特徴とする特許請求の範囲第１項記載の化
合物超電導薄膜の作製方法。(4) The method for producing a compound superconducting thin film according to claim 1, wherein the heat treatment is performed at 850 to 950°C for 2 hours or more.
特徴とする特許請求の範囲第１項記載の化合物超電導薄
膜の作製方法。(5) The method for producing a compound superconducting thin film according to claim 1, wherein each layer is formed by a sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62124613A JPS63289726A (en) | 1987-05-21 | 1987-05-21 | Manufacture of compound superconductive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62124613A JPS63289726A (en) | 1987-05-21 | 1987-05-21 | Manufacture of compound superconductive thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63289726A true JPS63289726A (en) | 1988-11-28 |
Family
ID=14889757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62124613A Pending JPS63289726A (en) | 1987-05-21 | 1987-05-21 | Manufacture of compound superconductive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63289726A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01111717A (en) * | 1987-10-26 | 1989-04-28 | Nippon Telegr & Teleph Corp <Ntt> | Production of oxide superconductive thin film |
| JPH01152772A (en) * | 1987-09-25 | 1989-06-15 | American Teleph & Telegr Co <Att> | Manufacture of superconductor oxide layer on substrate |
| JPH0360405A (en) * | 1989-07-25 | 1991-03-15 | Sumitomo Cement Co Ltd | Production of oxide superconducting thin film |
-
1987
- 1987-05-21 JP JP62124613A patent/JPS63289726A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01152772A (en) * | 1987-09-25 | 1989-06-15 | American Teleph & Telegr Co <Att> | Manufacture of superconductor oxide layer on substrate |
| JPH01111717A (en) * | 1987-10-26 | 1989-04-28 | Nippon Telegr & Teleph Corp <Ntt> | Production of oxide superconductive thin film |
| JPH0360405A (en) * | 1989-07-25 | 1991-03-15 | Sumitomo Cement Co Ltd | Production of oxide superconducting thin film |
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