JPS6328520B2 - - Google Patents
Info
- Publication number
- JPS6328520B2 JPS6328520B2 JP56209607A JP20960781A JPS6328520B2 JP S6328520 B2 JPS6328520 B2 JP S6328520B2 JP 56209607 A JP56209607 A JP 56209607A JP 20960781 A JP20960781 A JP 20960781A JP S6328520 B2 JPS6328520 B2 JP S6328520B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- semiconductor layer
- active layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims 1
- 230000000644 propagated effect Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56209607A JPS58114476A (ja) | 1981-12-28 | 1981-12-28 | 半導体レ−ザ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56209607A JPS58114476A (ja) | 1981-12-28 | 1981-12-28 | 半導体レ−ザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58114476A JPS58114476A (ja) | 1983-07-07 |
JPS6328520B2 true JPS6328520B2 (ko) | 1988-06-08 |
Family
ID=16575603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56209607A Granted JPS58114476A (ja) | 1981-12-28 | 1981-12-28 | 半導体レ−ザ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58114476A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105826812A (zh) * | 2015-01-27 | 2016-08-03 | 华为技术有限公司 | 可调激光器和调谐激光器的方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5119460A (en) * | 1991-04-25 | 1992-06-02 | At&T Bell Laboratories | Erbium-doped planar optical device |
FR2684823B1 (fr) * | 1991-12-04 | 1994-01-21 | Alcatel Alsthom Cie Gle Electric | Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication. |
CN1214499C (zh) * | 1994-02-24 | 2005-08-10 | 英国电讯有限公司 | 半导体器件 |
US5844929A (en) * | 1994-02-24 | 1998-12-01 | British Telecommunications Public Limited Company | Optical device with composite passive and tapered active waveguide regions |
US5574742A (en) * | 1994-05-31 | 1996-11-12 | Lucent Technologies Inc. | Tapered beam expander waveguide integrated with a diode laser |
US6381380B1 (en) * | 1998-06-24 | 2002-04-30 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
KR100958338B1 (ko) * | 2007-12-18 | 2010-05-17 | 한국전자통신연구원 | 광 증폭기가 집적된 슈퍼루미네슨트 다이오드 및 이를이용한 외부 공진 레이저 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57183091A (en) * | 1981-05-08 | 1982-11-11 | Toshiba Corp | Manufacture of optical integrated circuit |
-
1981
- 1981-12-28 JP JP56209607A patent/JPS58114476A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57183091A (en) * | 1981-05-08 | 1982-11-11 | Toshiba Corp | Manufacture of optical integrated circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105826812A (zh) * | 2015-01-27 | 2016-08-03 | 华为技术有限公司 | 可调激光器和调谐激光器的方法 |
CN105826812B (zh) * | 2015-01-27 | 2020-04-21 | 华为技术有限公司 | 可调激光器和调谐激光器的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS58114476A (ja) | 1983-07-07 |
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