JPS6328499B2 - - Google Patents
Info
- Publication number
- JPS6328499B2 JPS6328499B2 JP56111688A JP11168881A JPS6328499B2 JP S6328499 B2 JPS6328499 B2 JP S6328499B2 JP 56111688 A JP56111688 A JP 56111688A JP 11168881 A JP11168881 A JP 11168881A JP S6328499 B2 JPS6328499 B2 JP S6328499B2
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- layer
- conductivity type
- semiconductor layer
- depletion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111688A JPS5814580A (ja) | 1981-07-17 | 1981-07-17 | 可変容量装置 |
| GB08219890A GB2104725B (en) | 1981-07-17 | 1982-07-09 | Variable capacitance device |
| US06/397,283 US4529995A (en) | 1981-07-17 | 1982-07-12 | Variable capacitance device |
| FR8212483A FR2509907B1 (fr) | 1981-07-17 | 1982-07-16 | Dispositif a capacite variable |
| NL8202890A NL8202890A (nl) | 1981-07-17 | 1982-07-16 | Variabele capacitieve inrichting. |
| DE19823226673 DE3226673A1 (de) | 1981-07-17 | 1982-07-16 | Kapazitaetsvariationsvorrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111688A JPS5814580A (ja) | 1981-07-17 | 1981-07-17 | 可変容量装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814580A JPS5814580A (ja) | 1983-01-27 |
| JPS6328499B2 true JPS6328499B2 (enrdf_load_stackoverflow) | 1988-06-08 |
Family
ID=14567647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56111688A Granted JPS5814580A (ja) | 1981-07-17 | 1981-07-17 | 可変容量装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814580A (enrdf_load_stackoverflow) |
-
1981
- 1981-07-17 JP JP56111688A patent/JPS5814580A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5814580A (ja) | 1983-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3313431B2 (ja) | モノリシック単方向保護ダイオード | |
| CA1128670A (en) | Semiconductor device having a mos-capacitor | |
| US4456917A (en) | Variable capacitor | |
| JP2755135B2 (ja) | 可変容量装置および該可変容量装置を有する半導体集積回路装置 | |
| US4980735A (en) | Solid state imaging element | |
| US5491357A (en) | Integrated structure current sensing resistor for power MOS devices, particularly for overload self-protected power MOS devices | |
| US4529995A (en) | Variable capacitance device | |
| US4704625A (en) | Capacitor with reduced voltage variability | |
| JPS6328499B2 (enrdf_load_stackoverflow) | ||
| US5578862A (en) | Semiconductor integrated circuit with layer for isolating elements in substrate | |
| US4709159A (en) | Capacitance multiplier circuit | |
| JPS6328498B2 (enrdf_load_stackoverflow) | ||
| JPS6329421B2 (enrdf_load_stackoverflow) | ||
| JPS586181A (ja) | 可変容量装置 | |
| JPH0815206B2 (ja) | 半導体記憶装置 | |
| GB2103012A (en) | Variable capacitor | |
| JPS586182A (ja) | 可変容量装置 | |
| JPS6328347B2 (enrdf_load_stackoverflow) | ||
| KR0144241B1 (ko) | 반도체 메모리장치의 워드라인 배치방법 | |
| JP3138288B2 (ja) | 半導体装置 | |
| JPH07135296A (ja) | 半導体集積回路装置 | |
| JPH0834286B2 (ja) | 集積回路装置 | |
| JPH03155659A (ja) | 半導体装置 | |
| US4809051A (en) | Vertical punch-through cell | |
| JPS6328348B2 (enrdf_load_stackoverflow) |