JPS6328344B2 - - Google Patents
Info
- Publication number
- JPS6328344B2 JPS6328344B2 JP55107515A JP10751580A JPS6328344B2 JP S6328344 B2 JPS6328344 B2 JP S6328344B2 JP 55107515 A JP55107515 A JP 55107515A JP 10751580 A JP10751580 A JP 10751580A JP S6328344 B2 JPS6328344 B2 JP S6328344B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal layer
- sbd
- conductivity type
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 18
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- -1 boron ions Chemical class 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
この発明は、シヨツトキバリアダイオード（以
下「SBD」と略称する）の製造方法に係り、特
に逆方向特性を改善するための製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a shotgun barrier diode (hereinafter abbreviated as "SBD"), and particularly to a method of manufacturing a shotgun barrier diode (hereinafter referred to as "SBD") for improving reverse direction characteristics.
第１図は従来のSBDの一例の要部の縦断面図
である。１はｎ形のシリコン（Si）基板、２はシ
リコン基板１の一主面上に形成された二酸化ケイ
素（SiO2）膜、３はSiO2膜２の所要の部分に形
成された開孔部、４はシリコン基板１の開孔部３
に露呈する部分の表面上に白金（Pt）、パラジウ
ム（Pd）、タングステン（Ｗ）、クロム（Cr）、ニ
ツケル（Ni）などを蒸着させ熱処理して形成し
たバリアメタル層である。 FIG. 1 is a vertical cross-sectional view of the main parts of an example of a conventional SBD. 1 is an n-type silicon (Si) substrate, 2 is a silicon dioxide (SiO 2 ) film formed on one main surface of the silicon substrate 1, and 3 is an opening formed in a required part of the SiO 2 film 2. , 4 is the opening 3 of the silicon substrate 1
This is a barrier metal layer formed by vapor-depositing platinum (Pt), palladium (Pd), tungsten (W), chromium (Cr), nickel (Ni), etc. on the surface of the exposed portion and heat-treating it.
SBDの逆方向特性は、主としてシリコン基板
１とバリアメタル層４とにより形成される金属・
シリコン接合のシヨツトキ障壁の高さによつて決
定されるが、第１図に示すSBDにおいては、シ
リコン基板１のバリアメタル層４の周辺部に対応
する部分（図示Ａ）に電界が集中するため、いわ
ゆるサイドブレークダウンが生じ、逆方向特性が
低下する欠点があつた。上記の欠点を改善する方
法として、シリコン基板１の抵抗率を高くして逆
耐圧を向上させる方法がある。ところが、シリコ
ン基板１の抵抗率を高くすると、シリーズ抵抗が
増加し、順方向特性が低下する欠点がある。ま
た、半導体集積回路装置の構成素子としてSBD
を用いる場合は、他の構成素子の特性に影響を与
えることになり望ましくない。 The reverse characteristic of SBD is mainly due to the metal layer formed by the silicon substrate 1 and the barrier metal layer 4.
Although it is determined by the height of the shot barrier of the silicon junction, in the SBD shown in FIG. , so-called side breakdown occurred, and the reverse direction characteristics deteriorated. As a method for improving the above drawbacks, there is a method of increasing the resistivity of the silicon substrate 1 to improve the reverse breakdown voltage. However, increasing the resistivity of the silicon substrate 1 has the disadvantage that the series resistance increases and the forward characteristics deteriorate. In addition, SBD is used as a component of semiconductor integrated circuit devices.
If it is used, it is undesirable because it will affect the characteristics of other constituent elements.
第２図は従来のSBDの他の一例の要部の縦断
面図である。第２図において、第１図と同一符号
は第１図にて示したものと同様のものを表わして
いる。５はシリコン基板１のバリアメタル層４の
周辺部に接する部分に形成されたp+形のガード
リング拡散層である。ガードリング拡散層５を設
けガードリング拡散層５とシリコン基板１とが形
成するpn接合によつてバリアメタル層４のブレ
ークダウンを起こしやすい周辺部を保護すること
によつて、サイドブレークダウンを低減させるこ
とができるが、SBD全体の面積が大きくなると
いう欠点があつた。 FIG. 2 is a longitudinal cross-sectional view of the main parts of another example of a conventional SBD. In FIG. 2, the same reference numerals as in FIG. 1 represent the same components as shown in FIG. Reference numeral 5 denotes a p + type guard ring diffusion layer formed in a portion of the silicon substrate 1 that is in contact with the peripheral portion of the barrier metal layer 4 . By providing the guard ring diffusion layer 5 and protecting the peripheral area where breakdown of the barrier metal layer 4 is likely to occur due to the pn junction formed between the guard ring diffusion layer 5 and the silicon substrate 1, side breakdown is reduced. However, the disadvantage is that the overall area of the SBD increases.
この発明は、上記の点に鑑みてなされたもので
あり、表面に向つて拡開する開孔部を有する絶縁
膜を通じて、第１の導電形の半導体層の表面部に
第２の導電形の不純物をイオン注入してイオン注
入層を形成し、上記の半導体層の上記の開孔部に
露呈する表面部にバリアメタル層を形成しこの半
導体層の少なくともバリアメタル層の端縁に接す
る部分に高抵抗率半導体領域を形成することによ
つて、順方向特性が損なわれず、かつ形成するた
めの面積が大きくなることなく、逆方向特性が改
善されたSBDを製造する方法を提供することを
目的としたものである。 The present invention has been made in view of the above points, and includes a semiconductor layer of a first conductivity type on the surface of a semiconductor layer of a first conductivity type through an insulating film having an opening that expands toward the surface. An ion-implanted layer is formed by ion-implanting impurities, and a barrier metal layer is formed on the surface of the semiconductor layer exposed to the opening, and at least a portion of the semiconductor layer that contacts the edge of the barrier metal layer is An object of the present invention is to provide a method for manufacturing an SBD with improved reverse characteristics by forming a high resistivity semiconductor region without impairing the forward characteristics or increasing the area for formation. That is.
以下、実施例に基づいてこの発明を説明する。
第３図ａ〜ｄはこの発明によるSBDの製造方法
の一実施例の主要工程を示す縦断面図である。 The present invention will be explained below based on examples.
FIGS. 3a to 3d are longitudinal cross-sectional views showing the main steps of an embodiment of the method for manufacturing an SBD according to the present invention.
まず、第３図ａに示すように、ｎ形のシリコン
基板１の一主面上にSiO2膜２ａを形成し、この
SiO2膜２ａにシリコン基板１のバリアメタル層
を形成すべき部分を露呈すると共に表面に向つて
拡開する開孔部３ａを形成する。すなわち、
SiO2膜２ａの開孔部３ａの周壁を形成する部分
に、その厚さがシリコン基板１に近づくに従つて
漸次・薄くなるように傾斜部２１を設ける。この
傾斜部２１を設ける方法としては、例えば、
SiO2膜２ａのエツチング溶液として、40％フツ
化アンモニウム水溶液と50％フツ化水素酸とを
10：１〜40：１の割合で混合した混合溶液を用い
る方法、またはこの混合溶液に0.05〜２％の硝酸
を加えた溶液を用いる方法がある。 First, as shown in FIG. 3a, an SiO 2 film 2a is formed on one main surface of an n-type silicon substrate 1, and
An opening 3a is formed in the SiO 2 film 2a, exposing a portion of the silicon substrate 1 where a barrier metal layer is to be formed, and expanding toward the surface. That is,
A sloped portion 21 is provided in a portion of the SiO 2 film 2a forming the peripheral wall of the opening 3a so that its thickness gradually becomes thinner as it approaches the silicon substrate 1. As a method for providing this inclined portion 21, for example,
As an etching solution for the SiO 2 film 2a, 40% ammonium fluoride aqueous solution and 50% hydrofluoric acid were used.
There is a method using a mixed solution mixed at a ratio of 10:1 to 40:1, or a method using a solution obtained by adding 0.05 to 2% nitric acid to this mixed solution.
次に、第３図ｂに示すように、SiO2膜２ａを
マスクにしてシリコン基板１の表面部にオウ素Ｂ
イオンをイオン注入してホウ素イオン注入層６を
形成する。このとき、SiO2膜２ａの傾斜部２１
の厚さが薄い部分ではSiO2膜２ａを通してホウ
素イオンがシリコン基板１に到達するようなイオ
ン注入条件、例えば、加速電圧10〜20kv、ドー
ズ量1011〜1013cm-2程度で行う。つづいて、第３
図ｃに示すように、Pt、Pd、Ｗ、Cr、Niなどの
金属をイオン注入層６上およびSiO2膜２ａ上に
300〜800Å程度の厚さに蒸着して金属層７を形成
する。さらに、第３図ｄに示すように、500〜700
℃の温度で熱処理して金属層７の金属とSiとの合
金属からなるバリアメタル層４を形成すると共に
イオン注入しておいたホウ素を活性化させる。こ
のとき、バリアメタル層４が直下のホウ素イオン
注入層６を越えて形成されるか、またはホウ素イ
オン注入層６の一部がバリアメタル層４の直下に
残留して高抵抗率半導体層（図示せず）が形成さ
れるように上記の諸条件が決定される。また、シ
リコン基板１のバリアメタル層４の端縁に接する
部分に、自己整合的にP-形またはn-形の高抵抗
率半導体領域８が形成される。最後に、Siと合金
化しなかつたSiO2膜２ａ上の金属層７を除去す
る。以上によつて、実施例の方法によるSBDの
要部の製造が完了する。 Next, as shown in FIG. 3b, using the SiO 2 film 2a as a mask, the surface of the silicon substrate 1 is doped with boron B.
A boron ion implantation layer 6 is formed by implanting ions. At this time, the inclined portion 21 of the SiO 2 film 2a
In the thin part, the ion implantation is performed under conditions such that boron ions reach the silicon substrate 1 through the SiO 2 film 2a, for example, an acceleration voltage of 10 to 20 kV and a dose of about 10 11 to 10 13 cm -2 . Next, the third
As shown in Figure c, metals such as Pt, Pd, W, Cr, and Ni are placed on the ion implantation layer 6 and the SiO 2 film 2a.
The metal layer 7 is formed by vapor deposition to a thickness of about 300 to 800 Å. Furthermore, as shown in Figure 3d, 500 to 700
A heat treatment is performed at a temperature of .degree. C. to form a barrier metal layer 4 made of an alloy of the metal of the metal layer 7 and Si, and to activate the boron ion implanted. At this time, either the barrier metal layer 4 is formed beyond the boron ion-implanted layer 6 immediately below it, or a part of the boron ion-implanted layer 6 remains immediately below the barrier metal layer 4 to form a high-resistivity semiconductor layer (Fig. The above conditions are determined so that a (not shown) is formed. Further, a P - type or n - type high resistivity semiconductor region 8 is formed in a self-aligned manner in a portion of the silicon substrate 1 that is in contact with the edge of the barrier metal layer 4 . Finally, the metal layer 7 on the SiO 2 film 2a that has not been alloyed with Si is removed. Through the above steps, the manufacture of the main parts of the SBD by the method of the example is completed.
上記の実施例の方法によつて製造されたSBD
においては、シリコン基板１の少なくともバリア
メタル層４のブレークダウンを起こしやすい端縁
に接する部分にp-形またはn-形の高抵抗率半導
体領域８が存在するから、順方向特性を低下させ
ることなく、サイドブレークダウンを減少させ、
良好な逆方向特性が得られる。また、高抵抗率半
導体領域８の横方向の寸法は高々1μｍ程度であ
るから、SBD全体の面積が大きくなることはな
い。また、バリアメタル層４の直下に、P-形ま
たはn-形の高抵抗率半導体層を形成することも
可能であるから、その場合は逆方向特性が一層改
善される。 SBD manufactured by the method of the above example
In this case, since the p - type or n - type high resistivity semiconductor region 8 exists in at least the portion of the silicon substrate 1 that is in contact with the edge of the barrier metal layer 4 where breakdown is likely to occur, the forward characteristics are deteriorated. without reducing side breakdown,
Good reverse characteristics can be obtained. Further, since the lateral dimension of the high resistivity semiconductor region 8 is approximately 1 μm at most, the area of the entire SBD does not become large. Furthermore, since it is also possible to form a P - type or n - type high resistivity semiconductor layer directly under the barrier metal layer 4, the reverse direction characteristics are further improved in that case.
第４図はこの発明による方法で製造された
SBDを構成素子として有する半導体集積回路装
置であるSBD付トランジスタの一例の要部の縦
断面図である。第４図において、２１はｐ形のシ
リコン基板、２２はｎ形のエピタキシヤル成長
層、２３はシリコン基板１とエピタキシヤル成長
層２２との境界部の所要部分に形成されたn+形
の埋込層、２４は埋込層２３の上部のエピタキシ
ヤル成長層２２の表面部に選択的に形成されたｐ
形のベース領域、２５はベース領域２４の表面部
に選択的に形成されたn+形のエミツタ領域、２
６はエピタキシヤル成長層２２の表面部のベース
領域２４から離れた部分に形成されたn+形のコ
レクタコンタクト領域、２７はベース領域２４、
エミツタ領域２５およびコレクタコンタクト領域
２６上を含めてエピタキシヤル成長層２２上に形
成されたSiO2膜、２８はSiO2膜２７に形成され
た開孔部を通じてベース領域２４およびこれに接
するエピタキシヤル成長層２２にわたつて接着し
SBD部のバリアメタル層とトランジスタ部のベ
ース電極を兼ねる共通電極、２９はホウ素イオン
をイオン注入し熱処理することによつてエピタキ
シヤル成長層２２の共通電極２８の端縁に接する
部分に形成されたp-形またはn-形の高抵抗率半
導体領域、３０および３１はSiO2膜２７に形成
された開孔部を通じてそれぞれエミツタ領域２５
およびコレクタコンタクト領域２６に接着したエ
ミツタ電極およびコレクタ電極である。 Figure 4 shows the product manufactured by the method according to this invention.
1 is a longitudinal cross-sectional view of a main part of an example of a transistor with an SBD, which is a semiconductor integrated circuit device having an SBD as a component. In FIG. 4, 21 is a p-type silicon substrate, 22 is an n-type epitaxial growth layer, and 23 is an n + type buried layer formed at a required portion of the boundary between the silicon substrate 1 and the epitaxial growth layer 22. A buried layer 24 is a p layer selectively formed on the surface of the epitaxial growth layer 22 above the buried layer 23.
25 is an n + type emitter region selectively formed on the surface of the base region 24;
6 is an n + type collector contact region formed on the surface of the epitaxial growth layer 22 at a portion away from the base region 24; 27 is the base region 24;
The SiO 2 film 28 is formed on the epitaxial growth layer 22 including the emitter region 25 and the collector contact region 26, and the epitaxial growth layer 28 is formed on the base region 24 and the epitaxial growth layer in contact with the base region 24 through the opening formed in the SiO 2 film 27. glued across layer 22
A common electrode 29, which also serves as the barrier metal layer of the SBD section and the base electrode of the transistor section, is formed at a portion of the epitaxial growth layer 22 in contact with the edge of the common electrode 28 by ion implantation of boron ions and heat treatment. The p - type or n - type high resistivity semiconductor regions 30 and 31 are respectively connected to the emitter region 25 through the opening formed in the SiO 2 film 27.
and an emitter electrode and a collector electrode adhered to the collector contact region 26.
この場合、n+形のエミツタ領域２５のエミツ
タ電極３０形成部分およびn+形のコレクタコン
タクト領域２６のコレクタ電極３１形成部分にも
ｐ形不純物のホウ素がイオン注入されるが、ドー
ズ量が低いため、これらの部分において、導電形
が反転したり、コンタクト抵抗が大きくなること
はない。従つて、半導体集積回路装置に対して
も、この発明を有効に適用することができる。 In this case, the p - type impurity boron is ion-implanted into the emitter electrode 30 forming portion of the n + type emitter region 25 and the collector electrode 31 forming portion of the n + type collector contact region 26, but since the dose is low, In these parts, the conductivity type is not reversed and the contact resistance is not increased. Therefore, the present invention can be effectively applied to semiconductor integrated circuit devices as well.
以上詳述したように、この発明によるSBDの
製造方法によれば、半導体層の少なくともバリア
メタル層の端縁に接する部分にイオン注入法によ
つて高抵抗率半導体領域を形成するという簡単な
手段によつて、SBD全体の面積を大きくするガ
ードリング拡散層を設けることなく、ガードリン
グ拡散層を有するSBDと同程度に良好な逆方向
特性を有し、しかも順方向特性が損なわれない
SBDを製造することができる。 As detailed above, according to the SBD manufacturing method according to the present invention, a high resistivity semiconductor region is formed by ion implantation in at least the portion of the semiconductor layer that is in contact with the edge of the barrier metal layer. As a result, the SBD has reverse characteristics as good as an SBD with a guard ring diffusion layer without the need for a guard ring diffusion layer that increases the overall area of the SBD, and the forward characteristics are not impaired.
SBD can be manufactured.
第１図は従来のSBDの一例の要部の縦断面図、
第２図は従来のSBDの他の一例の要部の縦断面
図、第３図ａ〜ｄはこの発明によるSBDの製造
方法の一実施例の主要工程を示す縦断面図、第４
図はこの発明の方法で製造されたSBDを構成素
子として有するSBD付トランジスタの一例の要
部の縦断面図である。
図において、１はシリコン基板（半導体層）、
２ａはSiO2膜（絶縁膜）、３ａは開孔部、４はバ
リアメタル層、６はホウ素イオン注入層（イオン
注入層）、７は金属層、８は高抵抗率半導体領域
である。なお、図中同一符号はそれぞれ同一また
は相当部分を示す。
Figure 1 is a vertical cross-sectional view of the main parts of an example of a conventional SBD.
FIG. 2 is a longitudinal cross-sectional view of the main parts of another example of a conventional SBD, FIGS.
The figure is a longitudinal sectional view of a main part of an example of a transistor with an SBD having an SBD as a component manufactured by the method of the present invention. In the figure, 1 is a silicon substrate (semiconductor layer),
2a is a SiO 2 film (insulating film), 3a is an opening, 4 is a barrier metal layer, 6 is a boron ion implantation layer (ion implantation layer), 7 is a metal layer, and 8 is a high resistivity semiconductor region. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
所要部分を露呈させると共に表面に向かつて拡開
する開孔部を有する絶縁膜を形成する工程、上記
半導体層の上記開孔部に露呈する部分およびこの
部分に接し上記絶縁膜の厚さの薄い部分に覆われ
ている部分の表面部に第１の導電形とは反対の第
２の導電形の不純物をイオン注入してイオン注入
層を形成する工程、上記開孔部に露呈する上記半
導体層上および上記絶縁膜上にバリアメタル形成
用の金属による金属層を形成する工程、熱処理を
行つて上記金属層と上記半導体層とが接する部分
に上記金属層の金属と上記半導体層の半導体材料
とによる合金層からなるバリアメタル層を形成す
ると共に上記半導体層の少なくともこのバリアメ
タル層の端縁に接し上記絶縁膜の薄い部分の直下
の部分に第１の導電形または第２の導電形の高抵
抗率半導体領域を自己整合的に形成する工程、お
よび上記金属層の上記絶縁膜上の部分を除去する
工程を備えたシヨツトキバリアダイオードの製造
方法。1. A step of forming an insulating film on a semiconductor layer of a first conductivity type, which exposes a required portion of this semiconductor layer and has an opening that expands toward the surface; An ion-implanted layer is formed by ion-implanting an impurity of a second conductivity type, which is opposite to the first conductivity type, into the surface area of the area covered with the thin part of the insulating film and in contact with this area. a step of forming a metal layer of a metal for barrier metal formation on the semiconductor layer and the insulating film exposed in the opening, and heat treatment to bring the metal layer and the semiconductor layer into contact with each other. A barrier metal layer made of an alloy layer of the metal of the metal layer and the semiconductor material of the semiconductor layer is formed in a portion of the semiconductor layer that is in contact with at least the edge of the barrier metal layer and immediately below the thin portion of the insulating film. A shot barrier diode comprising: forming a high resistivity semiconductor region of a first conductivity type or a second conductivity type in a self-aligned portion; and removing a portion of the metal layer on the insulating film. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10751580A JPS5732680A (en) | 1980-08-05 | 1980-08-05 | Manufacture of schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10751580A JPS5732680A (en) | 1980-08-05 | 1980-08-05 | Manufacture of schottky barrier diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5732680A JPS5732680A (en) | 1982-02-22 |
| JPS6328344B2 true JPS6328344B2 (en) | 1988-06-08 |
Family
ID=14461150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10751580A Granted JPS5732680A (en) | 1980-08-05 | 1980-08-05 | Manufacture of schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732680A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034484A (en) * | 1973-06-26 | 1975-04-02 | ||
| JPS5068776A (en) * | 1973-10-23 | 1975-06-09 | ||
| JPS50131463A (en) * | 1974-04-02 | 1975-10-17 |
-
1980
- 1980-08-05 JP JP10751580A patent/JPS5732680A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034484A (en) * | 1973-06-26 | 1975-04-02 | ||
| JPS5068776A (en) * | 1973-10-23 | 1975-06-09 | ||
| JPS50131463A (en) * | 1974-04-02 | 1975-10-17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5732680A (en) | 1982-02-22 |
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