JPS62229880A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS62229880A
JPS62229880A JP7076686A JP7076686A JPS62229880A JP S62229880 A JPS62229880 A JP S62229880A JP 7076686 A JP7076686 A JP 7076686A JP 7076686 A JP7076686 A JP 7076686A JP S62229880 A JPS62229880 A JP S62229880A
Authority
JP
Japan
Prior art keywords
formed
region
oxide film
impurity
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7076686A
Inventor
Yoshinori Asahi
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7076686A priority Critical patent/JPS62229880A/en
Publication of JPS62229880A publication Critical patent/JPS62229880A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To alleviate the increase in electric field intensity, to improve withstanding voltage and to decrease adverse effects due to yield of hot carriers, by a structure, wherein impurity regions, which are to become a source and a drain, are positively isolated from a fieldinversion preventing impurity region.
CONSTITUTION: On a p-type semiconductor substrate 11, an element isolating regions comprising a field oxide film 12 and a high-concentration impurity p+ region 13 is formed. A gate oxide film is formed by thermal oxidation. A polycrystalline silicon film is formed on the entire surface by CVD. Selective etching is performed, and a gate electrode 16 is formed. A polycrystalline silicon layer is extended to a boundary part between an element region and the element isolating region. With the polycrystalline silicon film 16 as a mask, highconcentration impurity n+ regions 14 and 15 are formed by ion implantation or diffusion. The high-concentration u+ region 15 for a drain is isolated from the high-concentration p+ region 13 beneath the field oxide film 12. An insulator 18 of a CVD-silicon oxide film is deposited. Contact holes are formed, and an Al evaporated pattern 19 is formed.
COPYRIGHT: (C)1987,JPO&Japio
JP7076686A 1986-03-31 1986-03-31 Semiconductor device and manufacture thereof Pending JPS62229880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7076686A JPS62229880A (en) 1986-03-31 1986-03-31 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7076686A JPS62229880A (en) 1986-03-31 1986-03-31 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS62229880A true JPS62229880A (en) 1987-10-08

Family

ID=13440964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7076686A Pending JPS62229880A (en) 1986-03-31 1986-03-31 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS62229880A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185974A (en) * 1988-01-21 1989-07-25 Pioneer Electron Corp Mis-fet
JPH0521791A (en) * 1991-07-17 1993-01-29 Nec Kansai Ltd High-voltage field-effect transistor and ic
JPH08130308A (en) * 1994-10-31 1996-05-21 Nec Corp Semiconductor device
EP1043778A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. Method of fabrication of a high voltage MOS transistor
JP2001156268A (en) * 1999-11-25 2001-06-08 Hitachi Ltd Semiconductor integrated-circuit device
US6818915B1 (en) 1998-03-23 2004-11-16 Matsushita Electric Industrial Co., Ltd. Field-emission electron source

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185974A (en) * 1988-01-21 1989-07-25 Pioneer Electron Corp Mis-fet
JPH0521791A (en) * 1991-07-17 1993-01-29 Nec Kansai Ltd High-voltage field-effect transistor and ic
JPH08130308A (en) * 1994-10-31 1996-05-21 Nec Corp Semiconductor device
JP2800702B2 (en) * 1994-10-31 1998-09-21 日本電気株式会社 Semiconductor device
US6818915B1 (en) 1998-03-23 2004-11-16 Matsushita Electric Industrial Co., Ltd. Field-emission electron source
EP1043778A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. Method of fabrication of a high voltage MOS transistor
US6350637B1 (en) 1999-04-06 2002-02-26 Stmicroelectronics S.R.L. Method of fabrication of a no-field MOS transistor
JP2001156268A (en) * 1999-11-25 2001-06-08 Hitachi Ltd Semiconductor integrated-circuit device

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