JPS63283140A - Wire-bonding device - Google Patents
Wire-bonding deviceInfo
- Publication number
- JPS63283140A JPS63283140A JP62119406A JP11940687A JPS63283140A JP S63283140 A JPS63283140 A JP S63283140A JP 62119406 A JP62119406 A JP 62119406A JP 11940687 A JP11940687 A JP 11940687A JP S63283140 A JPS63283140 A JP S63283140A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- electrode section
- inert gas
- heating
- heating means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011261 inert gas Substances 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 238000005507 spraying Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000007664 blowing Methods 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置内に設けられた電極間を導電線に
て結線するワイヤボンディング装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a wire bonding device for connecting electrodes provided in a semiconductor device using a conductive wire.
従来の技術
従来のワイヤボンディングｖｃ置においては、第２図に
示すように、ヒートブロック２１上に基板２２を載置固
定し、基板２２を介してボンディング領域を加熱すると
ともにボンディングヘッド２３に超音波を印加してボン
ディングを行っていた。2. Description of the Related Art In a conventional wire bonding VC device, as shown in FIG. Bonding was performed by applying .
２４はヒートブロック２１に埋設されたヒータ、２５は
ＩＣ部品、２Ｇは半田付けされた電子部品、２７は電極
部、２８は導′ｉ！／１＃！である。24 is a heater embedded in the heat block 21, 25 is an IC component, 2G is a soldered electronic component, 27 is an electrode part, and 28 is a conductor'i! /1#! It is.
又、従来のワイヤボンディングにおいては、Ａｕ、Ａｇ
、Ｐｔ等のランドをＡｕワイヤを用いてボンディングす
るのが一般的であったが、近年、コストの低減及び低イ
ンピーダンス化を図るために、ＣｕやＡｇ Ｐｄ等のラ
ンドをＣｕワイヤを用いてボンディングすることが広く
行なわれるようになってきている。In addition, in conventional wire bonding, Au, Ag
It was common to bond lands made of materials such as , Pt, etc. using Au wires, but in recent years, in order to reduce costs and lower impedance, lands such as Cu, Ag Pd, etc. have been bonded using Cu wires. It is becoming more and more common to do so.
そのために、従来は第３図に示すように、前記基板２２
及びヒートブロック２３を、不活性ガス雰囲気に保った
カバー３０内に配置し、このカバー３０１こボンディン
グ用の開口３１を形成するとともに、この開口３１をシ
ールするため不活性ガスを用いたガスシャッター３２を
設け、前記開口３１を通してボン、ディングヘッド２３
を作動させてボンディングを行うように構成することに
よって、加熱したボンディング領域の酸化を防止してい
た。３３．３４はそれぞれカバー３０及びガスシャッタ
ー３２に設けられた不活性ガス導入口である。For this purpose, conventionally, as shown in FIG.
The heat block 23 is placed in a cover 30 maintained in an inert gas atmosphere, and an opening 31 for bonding is formed in the cover 301. A gas shutter 32 using an inert gas is installed to seal the opening 31. is provided, and the bonding head 23 is inserted through the opening 31.
By activating the bonding device to perform bonding, oxidation of the heated bonding area was prevented. 33 and 34 are inert gas inlets provided in the cover 30 and the gas shutter 32, respectively.
発明が解決しようとする問題点
ところが、上記従来のボンディング装置では、不活性が
大の消費１が多く、また大きなカバー３０やガスシャッ
ター３２が必要であるため装置が大掛かりとなるという
問題があった。又、複数のチップを有する基板２２の場
合には、各チップ毎にカバー３０に開口３１を設ける必
要があるので、実際上対応するのが困難であるという問
題もあった。Problems to be Solved by the Invention However, the above-mentioned conventional bonding equipment has the problem that it consumes a large amount of inert material, and also requires a large cover 30 and gas shutter 32, making the equipment large-scale. . Furthermore, in the case of a substrate 22 having a plurality of chips, it is necessary to provide an opening 31 in the cover 30 for each chip, which is difficult to accommodate in practice.
その他、基板２２を介してボンディング領域を加熱する
ので、基板２２上に半田付けされた他の電子部品２６が
存在する場合には、加熱温度を高（すると半田が溶けて
しまうため、ポンディングに必要な十分な温度まで高く
することはできず、そのためポンディングのａｒｍ性を
高めるためには超音波を印加してワイヤポンディングし
なければならず、装置が高価になるという問題があった
。In addition, since the bonding area is heated via the board 22, if there are other electronic components 26 soldered on the board 22, the heating temperature should be set to a high temperature (this will melt the solder and prevent bonding). It is not possible to raise the temperature to a sufficiently high level, and therefore, in order to improve the arm strength of bonding, wire bonding must be performed by applying ultrasonic waves, which poses a problem in that the device becomes expensive.
又、ヒートブロック２１にて基板２２を介して加熱する
ので熱効率が極めて悪く、加熱に要する時間も長くかか
り、生産性も低いという問題もあった。Further, since heating is performed via the substrate 22 in the heat block 21, the thermal efficiency is extremely poor, the time required for heating is long, and the productivity is also low.
本発明は、上記従来の問題点に霞み、少ない不活性ガス
の消費量でボンディング領域の酸化を確実に防止でき、
しかも構成が簡単でかつ基板に複数のチップを備えてい
る場合にも対応することができ、さらにボンディングを
能率良く行うことができるワイヤボンディング装置を提
供することを目的とする。The present invention overcomes the above-mentioned conventional problems and can reliably prevent oxidation of the bonding area with a small amount of inert gas consumption.
Moreover, it is an object of the present invention to provide a wire bonding apparatus that has a simple configuration, can be used even when a plurality of chips are provided on a substrate, and can perform bonding efficiently.
問題点を解決するための手段
本発明は、上記目的を達成するため、ボンディングヘッ
ドと、ワイヤポンディングすべき領域のみをスポット的
に加熱する加熱手段と、前記ぶ域及びその近傍に不活性
ガスを吹き付ける不活性ガス吹付手段とを備えているこ
とを特徴とする。Means for Solving the Problems In order to achieve the above object, the present invention includes a bonding head, a heating means for spot heating only the area to be wire bonded, and an inert gas in the area and its vicinity. and an inert gas spraying means for spraying.
作用
本発明によれば、加熱手段にてスポット的にボンディン
グ領域を加熱できるので、熱効率よ（短時間でボンディ
ング領域を加熱することができるとともに、このボンデ
ィング領域に不活性ガスを吹き付けることによって不活
性雰囲気とすることができて酸化を確実に防止できる。According to the present invention, since the bonding area can be heated spot-wise by the heating means, the bonding area can be heated in a short time with high thermal efficiency (the bonding area can be heated in a short time, and an inert gas can be heated by blowing an inert gas onto the bonding area). oxidation can be reliably prevented.
また、スポット状のボンディング領域に不活性ガスを吹
き付けるだけであるので、不活性ガスの消費量も少な（
で済むとともに、不活性ガス吹付手段を設けるだけでよ
いので、構成も簡単で、安価に構成でき、またポンディ
ングへラドと、加熱手段と、不活性ガス吹付手段を各ボ
ンディング領域に対して順次相対移動させることによっ
て複数のチップに対応することができる。さらに、基板
上に電子部品等が半田付けされていてもその半田が熱を
受けて溶ける虞れもない。In addition, since inert gas is simply sprayed onto spot-like bonding areas, the amount of inert gas consumed is small (
In addition, since it is only necessary to provide an inert gas blowing means, the structure is simple and inexpensive, and the bonding pad, heating means, and inert gas blowing means are sequentially installed for each bonding area. By relatively moving it, it is possible to accommodate a plurality of chips. Furthermore, even if electronic components or the like are soldered onto the board, there is no risk that the solder will melt due to heat.
実施例
以下、本発明の一実施例を第１図を参照しながら説明す
る。１はＸ−Ｙテーブルで、基板３の周縁部を載置支持
する支持台２が設けられ、この支持台２と固定具４にて
基板３を挟圧固定するように構成されている。前記基板
２には、その上面と下面の両面に、ワイヤポンディング
すべきＩＣ部品５と半田付けされた電子部品６が装着さ
れている。７は半田で、前記電子部品６を機械的に固定
するとともに基板３上に形成されたプリント配線に電気
的に接続している。８はボンディングヘッドであり、ボ
ンディングツール８ａが基板３のボンディング位置まで
延出されている。ボンディングヘッド８は、ヘッドコン
トローラ９にて制御されて上下動作し、ポンディングを
行うように構成されている。−１０はポンディングすべ
き領域をスポット的に加熱する加熱手段であって、レー
ザ光線や赤外線、遠赤外線等の熱線を照射する装置から
成り、前記ＩＣ部品５又は基板３上に形成された電極部
１２を直接加熱するように構成されている。この加熱手
段１０による加熱領域は、例えば直径路０．２論＋ｍ程
度である。１０ａは前記熱線又は光線を電極部１２に集
光する光学系である。１１は、加熱された電極ＭＪ１２
から放出される赤外線を検出する赤外線検出１１１ａを
備えた赤外線温度計等の非接触温度計であり、加熱され
た電極部１２が所定の温度以上に達すると、前記ヘッド
コントローラ９に対してスタート信号を出力するように
構成されている。１４は、前記光学系１０ａによる集光
位置に向かってＮ２１ｆス等の不活性ブスを吹き付ける
ように、前記光学系１０ａの周囲を取り囲むように形成
された不活性ガス吹付ノズルである。１５は不活性が大
の供給口、１６は加熱されたボンディング領域が不活性
ガスの吹き付けによって温度低下するのを抑制し、さら
には加熱を補助するように、不活性ガスを加熱する加熱
ヒータであり、不活性ガス吹付ノズル１４内に配置され
ている。EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIG. Reference numeral 1 designates an XY table, which is provided with a support base 2 on which the peripheral edge of a substrate 3 is placed and supported, and configured so that the support base 2 and a fixture 4 clamp and fix the substrate 3. An IC component 5 to be wire bonded and an electronic component 6 to be soldered are mounted on both the upper and lower surfaces of the board 2. A solder 7 mechanically fixes the electronic component 6 and electrically connects it to the printed wiring formed on the substrate 3. 8 is a bonding head, and a bonding tool 8a is extended to the bonding position of the substrate 3. The bonding head 8 is configured to move up and down under the control of a head controller 9 to perform bonding. -10 is a heating means for spot-heating the area to be bonded, and is comprised of a device for irradiating heat rays such as laser beams, infrared rays, far infrared rays, etc. The portion 12 is configured to be directly heated. The heating area by this heating means 10 is, for example, approximately 0.2 mm in diameter. 10a is an optical system that focuses the heat rays or light rays on the electrode section 12. 11 is a heated electrode MJ12
It is a non-contact thermometer such as an infrared thermometer equipped with an infrared detection 111a that detects infrared rays emitted from is configured to output. Reference numeral 14 denotes an inert gas spray nozzle formed to surround the optical system 10a so as to spray an inert bus such as N21f gas toward the light condensing position of the optical system 10a. 15 is a large inert gas supply port, and 16 is a heater that heats the inert gas so as to prevent the temperature of the heated bonding area from decreasing due to the spraying of the inert gas and further to assist in heating. It is located inside the inert gas spray nozzle 14.
以上の構成において、ワイヤボンディングを行うには、
Ｘ−Ｙテーブル１の支持台２上に基板３を載置して固定
具４にて固定し、Ｘ−Ｙテーブル１にてＴＣ部品５のポ
ンディ°ングすべき電極部１２をボンディングツール８
ａの下方位置に位置決めし、加熱手段１０にてこの電極
部１２を加熱する。それと同時に、この電極部１２に向
けて不活性ガス吹付ノズル１４から不活性ガスを吹き付
けて電極部１２を不活性雰囲気とし、電極部１２の酸化
を防止する。そして、前記電極部１２が導電線１３の再
結晶温度以上の温度まで加熱されると、これを非接触温
度計１１で検出し、ヘッドコントローラ９にスタート信
号を出力する。この温度検出の応答速度は２０＋ｏｓ程
度であり、動作遅れの要因となることはない。次に、ヘ
ッドコントローラ９にてボンディングヘッド８を下降さ
せ、導電線１３の一端をこの電極部１２に押圧してボン
ディングする。その際、電極部１２の温度を検出してボ
ンディングするので、ボンディングすべき電極部１２の
反射率の変化等によって熱吸収率が変化し、加熱特性が
変化しても常に十分な温度状態とすることができ、信頼
性の高いボンディングを行うことができる。次に、ボン
ディングヘッド８を適当距離上昇させた後、Ｘ−Ｙテー
ブル１を動作させて前記ＩＣ部品５の電極部１２と接続
すべき基板３上の配線パターンの電極部１２をボンディ
ングツール８ａの下方位置に位置決めし、不活性雰囲気
下で加熱手段１０にて同様に加熱した後ボンディングヘ
ッド８を下降させてボンディングし、その後導電＋１ｉ
１３を切断してボンディングヘッド８を上昇させる。以
下、同様にＩＣ部品５の各電極部１２と基板３の対応す
る電極部１２を順次ワイヤボンディングして電気的に接
続する。この間、加熱手段１０にてボンディングすべき
電極ｇ１２の領域だけが加熱されるので、電子部品６の
半田７が溶けるというようなことはない。また、ボンデ
ィングすべき電極部１２は不活性雰囲気にされているの
で、酸化するということもない。In the above configuration, to perform wire bonding,
The substrate 3 is placed on the support base 2 of the X-Y table 1 and fixed with the fixture 4, and the electrode part 12 of the TC component 5 to be bonded is attached to the bonding tool 8 on the X-Y table 1.
The electrode section 12 is positioned below a, and the heating means 10 heats the electrode section 12. At the same time, an inert gas is sprayed from the inert gas spray nozzle 14 toward the electrode section 12 to create an inert atmosphere in the electrode section 12, thereby preventing the electrode section 12 from being oxidized. When the electrode section 12 is heated to a temperature equal to or higher than the recrystallization temperature of the conductive wire 13, this is detected by the non-contact thermometer 11 and a start signal is output to the head controller 9. The response speed of this temperature detection is about 20+os, and does not cause any delay in operation. Next, the bonding head 8 is lowered by the head controller 9, and one end of the conductive wire 13 is pressed against the electrode portion 12 for bonding. At that time, since the temperature of the electrode part 12 is detected and bonded, the heat absorption rate changes due to changes in the reflectance of the electrode part 12 to be bonded, etc., and even if the heating characteristics change, a sufficient temperature state is always maintained. It is possible to perform highly reliable bonding. Next, after raising the bonding head 8 by an appropriate distance, the X-Y table 1 is operated to move the electrode part 12 of the wiring pattern on the substrate 3 to be connected to the electrode part 12 of the IC component 5 to the bonding tool 8a. After positioning it in the lower position and heating it in the same way with the heating means 10 under an inert atmosphere, the bonding head 8 is lowered to perform bonding, and then conductive +1i
13 to raise the bonding head 8. Thereafter, similarly, each electrode portion 12 of the IC component 5 and the corresponding electrode portion 12 of the substrate 3 are sequentially wire-bonded to electrically connect them. During this time, since only the area of the electrode g12 to be bonded is heated by the heating means 10, the solder 7 of the electronic component 6 will not melt. Further, since the electrode portion 12 to be bonded is kept in an inert atmosphere, it will not be oxidized.
上記実施例では非接触温度計１１により再結晶温度以上
の温度に達したことを検知してからヘッドコントローラ
９をスタートさせるようにしたが、ボンディング時に再
結晶温度以上であればよいので、温度上昇速度と動作に
要する時間を考慮してそれより低い所定温度を検知する
と、スタート信号を発するようにしてもよい。In the above embodiment, the head controller 9 is started after the non-contact thermometer 11 detects that the temperature has reached the recrystallization temperature or higher. When a predetermined temperature lower than the predetermined temperature is detected in consideration of the speed and the time required for operation, a start signal may be issued.
発明の効果
本発明のワイヤボンディング装置によれば、以上のよう
にスポット的にボンディング領域を加熱できるので、熱
効率よく短時間でボンディング領域を加熱できるととも
に、このボンディング領域を簡単に不活性雰囲気とする
ことができて酸化を確実に防止でき、しかもスポット状
のボンディング領域に不活性ガスを吹き付けるだけであ
るので、不活性が大の消費量も少なくて済むとともに、
不活性γス吹は手段を設けるだけでよいので、構成も簡
単で、安価に構成できる。又、ボンディングヘッドと、
加熱手段と、不活性ガス吹付手段を各ボンディングｉ域
に対して順次相対移動させることによって簡単に複数の
チップに対応することができ、さらに基板上に電子部品
等が半田付けされていてもその半田が熱を受けて溶ける
虞れもない等、大なる効果を発揮する。Effects of the Invention According to the wire bonding apparatus of the present invention, the bonding area can be heated in spots as described above, so the bonding area can be heated in a short time with high thermal efficiency, and the bonding area can be easily made into an inert atmosphere. oxidation can be reliably prevented, and since inert gas is simply sprayed onto spot-like bonding areas, the amount of inert gas consumed can be reduced.
Since inert γ gas blowing only requires the provision of a means, the construction is simple and can be constructed at low cost. Also, a bonding head,
By sequentially moving the heating means and inert gas blowing means relative to each bonding area, it is possible to easily handle multiple chips, and even if electronic components are soldered on the board, This has great effects, such as there is no risk of the solder melting due to heat.
第１図は本発明の一実施例の概略構成図、第２図は第１
の従来例を示す斜視図、１３図は第２の従来例の概略構
成図である。
８・・・・・・・・・ボンディングへラド１０・・・・
・・・・・加熱手段
１４・・・・・・・・・不活性ガス吹付手段。
代理人 弁理士 中尾敏男 はか１名８−−−ホ゛′
ンテ）ン２〉＼ッド
ｊｌ ＺFIG. 1 is a schematic configuration diagram of an embodiment of the present invention, and FIG.
FIG. 13 is a perspective view showing a conventional example, and FIG. 13 is a schematic configuration diagram of a second conventional example. 8...... Rad to bonding 10...
... Heating means 14 ... Inert gas spraying means. Agent: Patent attorney Toshio Nakao Number of persons: 8---
nt)n 2〉＼djl Z
Claims (1)
のみをスポット的に加熱する加熱手段と、前記領域及び
その近傍に不活性ガスを吹き付ける不活性ガス吹付手段
とを備えていることを特徴とするワイヤボンディング装
置。A wire bonding apparatus comprising: a bonding head; a heating means for spot-heating only a region to be wire-bonded; and an inert gas spraying means for spraying an inert gas onto the region and its vicinity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62119406A JPS63283140A (en) | 1987-05-15 | 1987-05-15 | Wire-bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62119406A JPS63283140A (en) | 1987-05-15 | 1987-05-15 | Wire-bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63283140A true JPS63283140A (en) | 1988-11-21 |
Family
ID=14760685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62119406A Pending JPS63283140A (en) | 1987-05-15 | 1987-05-15 | Wire-bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63283140A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614113A (en) * | 1995-05-05 | 1997-03-25 | Texas Instruments Incorporated | Method and apparatus for performing microelectronic bonding using a laser |
| CN109392299A (en) * | 2017-08-08 | 2019-02-26 | 伊利诺斯工具制品有限公司 | Tin cream nozzle, workbench and automatic tin cream adding device |
| KR102233338B1 (en) * | 2020-10-12 | 2021-03-29 | 주식회사 저스템 | Apparatus for preventing oxidization of flip chip bonding |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60144943A (en) * | 1984-01-07 | 1985-07-31 | Nec Kansai Ltd | Manufacture of semiconductor device |
| JPS6167926A (en) * | 1984-09-12 | 1986-04-08 | Hitachi Tokyo Electronics Co Ltd | Bonding |
| JPS6178131A (en) * | 1984-09-25 | 1986-04-21 | Toshiba Corp | Wire bonding device |
| JPS61172344A (en) * | 1985-01-25 | 1986-08-04 | Mitsubishi Electric Corp | Wire bonding process |
-
1987
- 1987-05-15 JP JP62119406A patent/JPS63283140A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60144943A (en) * | 1984-01-07 | 1985-07-31 | Nec Kansai Ltd | Manufacture of semiconductor device |
| JPS6167926A (en) * | 1984-09-12 | 1986-04-08 | Hitachi Tokyo Electronics Co Ltd | Bonding |
| JPS6178131A (en) * | 1984-09-25 | 1986-04-21 | Toshiba Corp | Wire bonding device |
| JPS61172344A (en) * | 1985-01-25 | 1986-08-04 | Mitsubishi Electric Corp | Wire bonding process |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614113A (en) * | 1995-05-05 | 1997-03-25 | Texas Instruments Incorporated | Method and apparatus for performing microelectronic bonding using a laser |
| CN109392299A (en) * | 2017-08-08 | 2019-02-26 | 伊利诺斯工具制品有限公司 | Tin cream nozzle, workbench and automatic tin cream adding device |
| CN109392299B (en) * | 2017-08-08 | 2022-03-29 | 伊利诺斯工具制品有限公司 | Solder paste nozzle, workbench and solder paste adding device |
| KR102233338B1 (en) * | 2020-10-12 | 2021-03-29 | 주식회사 저스템 | Apparatus for preventing oxidization of flip chip bonding |
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