JPH0837203A - Wire bonder and method - Google Patents
Wire bonder and methodInfo
- Publication number
- JPH0837203A JPH0837203A JP6192053A JP19205394A JPH0837203A JP H0837203 A JPH0837203 A JP H0837203A JP 6192053 A JP6192053 A JP 6192053A JP 19205394 A JP19205394 A JP 19205394A JP H0837203 A JPH0837203 A JP H0837203A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- wire
- bonding
- lead frame
- clean air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000008188 pellet Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000005507 spraying Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 22
- 239000000126 substance Substances 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はワイヤボンデイング装置
及び方法に係り、特にキャピラリへの異物付着防止構造
及び方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus and method, and more particularly to a structure and method for preventing foreign matter from adhering to a capillary.
【０００２】[0002]
【従来の技術】一般に、半導体装置の製造工程は、リー
ドフレームに半田ペースト又は銀ペースト等を介して半
導体ペレットをボンデイングするペレットボンデイング
工程が行われ、次に前記ペーストを乾燥するキュア工程
が行われた後、前記半導体ペレットのパッドと前記リー
ドフレームのリード部とにワイヤを接続するワイヤボン
デイング工程が行われる。2. Description of the Related Art Generally, a semiconductor device manufacturing process includes a pellet bonding process for bonding semiconductor pellets to a lead frame through a solder paste or a silver paste, and a curing process for drying the paste. After that, a wire bonding step of connecting a wire to the pad of the semiconductor pellet and the lead portion of the lead frame is performed.
【０００３】前記キュア工程では、ペーストに含まれる
有害ガス等の異物が除去される。しかし、有害ガスが完
全に除去されない場合が多々ある。このように有害ガス
が完全に除去されない状態でワイヤボンデイング工程が
行われると、次のような問題が生じる。ワイヤボンデイ
ングのために、リードフレームはヒートブロックで１５
０〜４００°Ｃに加熱されるので、この加熱によりペー
ストに残留する有害ガスが上昇してキャピラリの先端に
異物として付着する。キャピラリの先端に異物が付着す
ると、ボンダビリティが低下する。従来、キャピラリ先
端への異物付着については何ら配慮がなされていない。In the curing step, foreign substances such as harmful gas contained in the paste are removed. However, there are many cases where harmful gas is not completely removed. If the wire bonding process is performed in such a state that the harmful gas is not completely removed, the following problems occur. The lead frame is a heat block for wire bonding.
Since it is heated to 0 to 400 ° C., the harmful gas remaining in the paste rises due to this heating and adheres to the tip of the capillary as a foreign substance. When foreign matter adheres to the tip of the capillary, bondability is reduced. Conventionally, no consideration has been given to the adhesion of foreign matter to the tip of the capillary.
【０００４】[0004]
【発明が解決しようとする課題】従来、ワイヤボンデイ
ングにおいて、リードフレームがヒートブロック上に移
送されて位置決めされ、カメラでボンデイング位置を検
出する場合、ヒートブロックの加熱によって陽炎が発生
し、この陽炎によってボンデイング位置が正確に検出で
きない。このため、例えば特開昭５３−１０２６８号公
報及び実開昭５１−８８１７７号公報に示すように、エ
ア又は不活性ガスをボンデイング面に向けて吹き付ける
ことが行われている。またボンデイング部の固着を促進
させるために、例えば特公昭４９−５６７３号公報に示
すように、不活性冷却ガスをボンデイング面に向けて吹
き付けることが行われている。Conventionally, in wire bonding, when a lead frame is transferred and positioned on a heat block and the bonding position is detected by a camera, heat of the heat block causes heat haze, and this heat haze causes The bonding position cannot be detected accurately. For this reason, air or an inert gas is sprayed toward the bonding surface as shown in, for example, Japanese Patent Laid-Open No. 53-10268 and Japanese Utility Model Laid-Open No. 51-88177. Further, in order to promote the fixation of the bonding portion, an inert cooling gas is sprayed toward the bonding surface, as shown in Japanese Patent Publication No. 49-5673.
【０００５】しかし、上記従来技術は、陽炎を防止する
ため及びボンデイング部の固着を促進させるためにエア
をボンデイング面に吹き付けるのみであり、キャピラリ
先端に異物が付着することを防止する効果は殆ど得られ
なかった。However, the above-mentioned prior art only blows air onto the bonding surface in order to prevent heat haze and promote the fixing of the bonding portion, and almost no effect of preventing foreign matter from adhering to the tip of the capillary is obtained. I couldn't do it.
【０００６】本発明の目的は、キャピラリへの異物付着
を防止し、ボンダビリティの向上が図れるワイヤボンデ
イング装置及び方法を提供することにある。An object of the present invention is to provide a wire bonding apparatus and method capable of preventing foreign matter from adhering to a capillary and improving bondability.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
の本発明の装置は、半導体ペレットのパッドとリードフ
レームのリード部とをキャピラリに挿通したワイヤで接
続するワイヤボンデイング装置において、前記キャピラ
リの先端部分に向けてクリーンエア又は還元性ガスを吹
き付けるパイプを設けたことを特徴とする。The device of the present invention for achieving the above object is a wire bonding device for connecting a pad of a semiconductor pellet and a lead portion of a lead frame with a wire inserted through the capillary. It is characterized in that a pipe for blowing clean air or reducing gas toward the tip portion is provided.
【０００８】上記目的を達成するための本発明の方法
は、半導体ペレットのパッドとリードフレームのリード
部とをキャピラリに挿通したワイヤで接続するワイヤボ
ンデイング方法において、前記キャピラリの先端部分に
向けてクリーンエア又は還元性ガスを吹き付けることを
特徴とする。A method of the present invention for achieving the above object is a wire bonding method in which a pad of a semiconductor pellet and a lead portion of a lead frame are connected by a wire inserted into a capillary, and a clean is made toward a tip portion of the capillary. It is characterized by spraying air or a reducing gas.
【０００９】[0009]
【作用】リードフレームが加熱されてペーストから発生
する有害ガスは、キャピラリの先端部分に向けて積極的
に吹き付けられるクリーンエア又は還元性ガスにより除
去され、キャピラリへの異物の付着が防止される。The harmful gas generated from the paste when the lead frame is heated is removed by the clean air or the reducing gas that is positively blown toward the tip portion of the capillary, and foreign matter is prevented from adhering to the capillary.
【００１０】[0010]
【実施例】以下、本発明の一実施例を図１により説明す
る。半導体ペレット１を固着したリードフレーム２は、
ヒートブロック３上に位置決め載置され、キャピラリ４
に挿通されたワイヤ５が半導体ペレット１のパッド１ａ
とリードフレーム２のリード部２ａに接続される。前記
キャピラリ４はボンデイングアーム６の一端に取付けら
れ、ボンデイングアーム６はボンデイングヘッド７に揺
動又は上下動可能に取付けられている。そして、ボンデ
イングアーム６は図示しない上下駆動手段でキャピラリ
４がＺ軸（垂直）方向に移動するように駆動され、また
ボンデイングヘッド７は図示しないＸＹテーブルに搭載
されてＸＹ軸方向に駆動される。以上は周知の構造及び
作用であるので、これ以上の説明は省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. The lead frame 2 to which the semiconductor pellet 1 is fixed is
The capillary 4 is positioned and placed on the heat block 3.
The wire 5 inserted in the pad is the pad 1a of the semiconductor pellet 1.
Is connected to the lead portion 2a of the lead frame 2. The capillary 4 is attached to one end of a bonding arm 6, and the bonding arm 6 is attached to a bonding head 7 so as to be swingable or vertically movable. Then, the bonding arm 6 is driven by an unillustrated vertical drive means so that the capillary 4 moves in the Z-axis (vertical) direction, and the bonding head 7 is mounted on an XY table (not shown) and driven in the XY-axis directions. Since the above is the well-known structure and operation, further description will be omitted.
【００１１】本実施例においては、キャピラリ４の先端
部分にクリーンエア又は還元性ガス１０を吹き付けるパ
イプ１１を配設し、このパイプ１１に前記クリーンエア
又は還元性ガス１０を供給する流体供給源１２を接続し
ている。In this embodiment, a pipe 11 for spraying clean air or reducing gas 10 is arranged at the tip of the capillary 4, and a fluid supply source 12 for supplying the clean air or reducing gas 10 to the pipe 11. Are connected.
【００１２】そこで、キャピラリ４によるワイヤボンデ
イング中にパイプ１１よりクリーンエア又は還元性ガス
１０をキャピラリ４の先端部分に吹き付ける。これによ
り、ヒートブロック３で加熱されて発生する有害ガスが
クリーンエア又は還元性ガス１０で吹き飛ばされ、キャ
ピラリ４に付着して異物となることが防止される。また
還元性ガスの場合は、有害ガスを吹き飛ばすのみでな
く、有害ガスに作用して有害ガスを溶解させる。ここ
で、クリーンエア又は還元性ガス１０の風速は、２０〜
４０ｃｍ／ｓｅｃ程度が好ましい。風速が２０ｃｍ／ｓ
ｅｃより低いと、有害ガスを充分に吹き飛ばすことがで
きなく、また４０ｃｍ／ｓｅｃより大きいと、ボンデイ
ング面及びワイヤ５の先端のボール等を冷却してしま
い、ボンデイングされたワイヤの付着不良が発生する。
実験の結果、風速が約３０ｃｍ／ｓｅｃの場合に最も良
い結果が得られた。Therefore, during the wire bonding by the capillary 4, clean air or reducing gas 10 is blown to the tip of the capillary 4 from the pipe 11. This prevents the harmful gas generated by heating in the heat block 3 from being blown off by the clean air or the reducing gas 10 and adhering to the capillary 4 to become a foreign substance. Further, in the case of a reducing gas, not only is the harmful gas blown off, but it acts on the harmful gas to dissolve it. Here, the wind speed of the clean air or the reducing gas 10 is 20 to 20.
It is preferably about 40 cm / sec. Wind speed is 20 cm / s
If it is lower than ec, the harmful gas cannot be sufficiently blown off, and if it is higher than 40 cm / sec, the bonding surface and the ball at the tip of the wire 5 will be cooled, resulting in defective adhesion of the bonded wire. .
As a result of the experiment, the best result was obtained when the wind speed was about 30 cm / sec.
【００１３】次に実験の結果について述べる。クリーン
エア又は還元性ガス１０をキャピラリ４の先端部分に吹
き付けないで９，６００ワイヤの接続を行った場合、キ
ャピラリ４の先端部分に汚れが発生し、ワイヤ付着が発
生した。しかし、本実施例のように、キャピラリ４の先
端部分にクリーンエア又は還元性ガス１０を風速３０ｃ
ｍ／ｓｅｃで吹き付けた場合、９，６００ワイヤの接続
でもキャピラリ４の先端の汚れは全く認められなく、良
好なボンデイングを行うことができた。Next, the results of the experiment will be described. When 9,600 wires were connected without blowing the clean air or reducing gas 10 to the tip portion of the capillary 4, the tip portion of the capillary 4 was contaminated and the wire was attached. However, as in the present embodiment, clean air or reducing gas 10 is passed through the tip of the capillary 4 at a wind speed of 30c.
When sprayed at m / sec, no dirt was found on the tip of the capillary 4 even when 9,600 wires were connected, and good bonding could be performed.
【００１４】[0014]
【発明の効果】本発明によれば、キャピラリの先端部分
に向けてクリーンエア又は還元性ガスを吹き付けるの
で、キャピラリへの異物付着を防止し、ボンダビリティ
が向上する。According to the present invention, since clean air or reducing gas is blown toward the tip of the capillary, foreign matter is prevented from adhering to the capillary and bondability is improved.
【図１】本発明のワイヤボンデイング装置の一実施例を
示す要部説明図である。FIG. 1 is an explanatory view of essential parts showing an embodiment of a wire bonding apparatus of the present invention.
１ 半導体ペレット １ａ パッド ２ リードフレーム ２ａ リード部 ４ キャピラリ ５ ワイヤ １０ クリーンエア又は還元性ガス １１ パイプ 1 semiconductor pellet 1a pad 2 lead frame 2a lead part 4 capillary 5 wire 10 clean air or reducing gas 11 pipe
Claims (3)
ムのリード部とをキャピラリに挿通したワイヤで接続す
るワイヤボンデイング装置において、前記キャピラリの
先端部分に向けてクリーンエア又は還元性ガスを吹き付
けるパイプを設けたことを特徴とするワイヤボンデイン
グ装置。1. A wire bonding apparatus for connecting a pad of a semiconductor pellet and a lead portion of a lead frame with a wire inserted in a capillary, wherein a pipe for spraying clean air or reducing gas is provided toward a tip portion of the capillary. A wire bonding device characterized in that
ムのリード部とをキャピラリに挿通したワイヤで接続す
るワイヤボンデイング方法において、前記キャピラリの
先端部分に向けてクリーンエア又は還元性ガスを吹き付
けることを特徴とするワイヤボンデイング方法。2. A wire bonding method for connecting a pad of a semiconductor pellet and a lead portion of a lead frame with a wire inserted through a capillary, wherein clean air or reducing gas is blown toward the tip of the capillary. How to wire bond.
は、２０〜４０ｃｍ／ｓｅｃであることを特徴とする請
求項１又は２記載のワイヤボンデイング装置及び方法。3. The wire bonding apparatus and method according to claim 1, wherein the wind speed of the clean air or the reducing gas is 20 to 40 cm / sec.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6192053A JPH0837203A (en) | 1994-07-22 | 1994-07-22 | Wire bonder and method |
| KR1019950020424A KR960005909A (en) | 1994-07-22 | 1995-07-12 | Wire Bonding Device and Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6192053A JPH0837203A (en) | 1994-07-22 | 1994-07-22 | Wire bonder and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0837203A true JPH0837203A (en) | 1996-02-06 |
Family
ID=16284841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6192053A Pending JPH0837203A (en) | 1994-07-22 | 1994-07-22 | Wire bonder and method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0837203A (en) |
| KR (1) | KR960005909A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100777090B1 (en) * | 2006-09-06 | 2007-11-19 | (주)커팅에치쎄미테크 | Washing device of heater block for wire bonders |
| KR100910748B1 (en) * | 2006-07-14 | 2009-08-05 | 가부시키가이샤 신가와 | Bonding device, and method for washing the tip of the bonding tool |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100726767B1 (en) * | 2001-04-04 | 2007-06-11 | 삼성테크윈 주식회사 | Method for controlling operation of wire bonder |
-
1994
- 1994-07-22 JP JP6192053A patent/JPH0837203A/en active Pending
-
1995
- 1995-07-12 KR KR1019950020424A patent/KR960005909A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100910748B1 (en) * | 2006-07-14 | 2009-08-05 | 가부시키가이샤 신가와 | Bonding device, and method for washing the tip of the bonding tool |
| KR100777090B1 (en) * | 2006-09-06 | 2007-11-19 | (주)커팅에치쎄미테크 | Washing device of heater block for wire bonders |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960005909A (en) | 1996-02-23 |
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