JP2885614B2 - Wire bonding equipment - Google Patents
Wire bonding equipmentInfo
- Publication number
- JP2885614B2 JP2885614B2 JP5166659A JP16665993A JP2885614B2 JP 2885614 B2 JP2885614 B2 JP 2885614B2 JP 5166659 A JP5166659 A JP 5166659A JP 16665993 A JP16665993 A JP 16665993A JP 2885614 B2 JP2885614 B2 JP 2885614B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- wire
- wire bonding
- hot air
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】この発明は基板表面に載置したチ
ップ上のボンデイングパットと基板上のリードに細線を
ボンドするワイヤボンデイング装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus for bonding a fine wire to a bonding pad on a chip mounted on a substrate surface and a lead on the substrate.
【０００２】[0002]
【従来の技術】図２は従来のワイヤボンデイング装置の
一部を示す概要図であり、図２において、１０１は例え
ば３００℃に加熱される加熱台としてのヒータブロッ
ク、１０２はヒータブロック１０１の表面に載置した耐
熱性を有するエポキシ基板、１０３ａ、１０３ｂはエポ
キシ基板１０２をヒータブロック１０１上に押圧固定す
る押え爪、１０４ａ、１０４ｂはエポキシ基板１０２上
に載置したＬＥＤ、ＩＣ等のチップ、１０５はチップ上
のボンデイングパットまたはエポキシ基板上のリードの
端子にボンドする金線または銅線などの細線である。2. Description of the Related Art FIG. 2 is a schematic view showing a part of a conventional wire bonding apparatus. In FIG. 2, reference numeral 101 denotes a heater block as a heating table heated to, for example, 300.degree. 103a and 103b are pressing claws for pressing and fixing the epoxy substrate 102 on the heater block 101; 104a and 104b are chips such as LEDs and ICs mounted on the epoxy substrate 102; Is a thin wire such as a gold wire or a copper wire bonded to a bonding pad on a chip or a terminal of a lead on an epoxy substrate.
【０００３】次に図３を参照しながらボンデイングプロ
セスを説明する。まず、ヒータブロック１０１を約３０
０℃に加熱し、その表面に載置したエポキシ基板１０２
および該エポキシ基板上に載置したチップ１０４ａ、１
０４ｂを所定の温度に加熱する。Next, the bonding process will be described with reference to FIG. First, the heater block 101
The epoxy substrate 102 is heated to 0 ° C. and placed on its surface.
And chips 104a, 1 mounted on the epoxy substrate
04b is heated to a predetermined temperature.
【０００４】この状態において、キャピラリ１０７の先
端部に細線１０５を引き出し、この細線先端部を放電に
より溶融した球１０５ａをつくる（図３）。次いで、
ワイヤクランプ１０６を開き、キャピラリ１０７を下降
させ、チップ１０４ａのボンデイングパッド上に球１０
５ａを圧着する。その際、第１ボンドと呼ばれる熱圧着
がなされる（図３）。[0004] In this state, pull the thin line 105 to the distal end of the capillary 107, making the ball 105a melted by discharging the fine wire tip (FIG. 3). Then
Open the wire clamp 10 6, the capillary 107 is lowered, balls on bonding pads of the chip 104a 10
5a is crimped. At this time, thermocompression bonding called a first bond is performed (FIG. 3).
【０００５】圧着後、キャピラリ１０７を上昇させて一
旦停止する。その際、エポキシ基板１０２とチップ１０
４ａ、１０４ｂを乗せているヒータブロック１０１を動
かしてエポキシ基板１０２の所定のボンデイングパッド
部分の上にキャピラリ１０７がくるようにする（図３
）。次いで、再びキャピラリ１０７を下降させて細線
１０５を圧着し、第２ボンドを行う（図３）。[0005] After crimping, once stopped by raising the capillary 10 7. At this time, the epoxy substrate 102 and the chip 10
4a, the capillary 107 on the predetermined bonding pad portion of the d port carboxymethyl substrate 102 by moving the heater block 101 which carrying 104b comes to the (3
). Then, a thin line 105 and pressed by lowering the capillary 10 7 again, a second bond (Figure 3).
【０００６】次に、ワイヤクランプ１０６を閉じてキャ
ピラリ１０７を上昇させ、細線１０５を切り、の状態
に戻す（図３）。[0006] Then, raising the capillary 10 7 closes the wire clamp 10 6, cut thin line 105, back to the state (FIG. 3).
【０００７】[0007]
【発明が解決しようとする課題】従来のワイヤボンデイ
ング装置は以上のように構成されているので、ヒータブ
ロック上に載置するエポキシ基板のように耐熱があれば
よいが、ガラスエポキシ基板のように耐熱性がない場合
は、ヒータブロックの加熱温度を１２０度程度に下げな
ければならない。Since the conventional wire bonding apparatus is constructed as described above, the wire bonding apparatus only needs to have heat resistance like an epoxy board mounted on a heater block. If there is no heat resistance, the heating temperature of the heater block must be reduced to about 120 degrees.
【０００８】ところが、ヒータブロックの加熱温度を低
下させると、ガラスエポキシ基板およびチップの加熱が
不十分となり、細線１０５の融着強度、つまりボールシ
ェア荷重が低下する。この結果、細線融着（第１ボン
ド）後に次の細線融着（第２ボンド）位置がキャピラリ
の下に位置するように、図２の矢示方向にヒータブロッ
クを移動させるとき、第１ボンド部に加わるボールシェ
ア荷重で細線融着が外れるという問題点があった。However, when the heating temperature of the heater block is reduced, the heating of the glass epoxy substrate and the chip becomes insufficient, and the fusion strength of the fine wire 105, that is, the ball shear load decreases. As a result, when the heater block is moved in the direction indicated by the arrow in FIG. 2 so that the next fine wire fusion (second bond) position is located below the capillary after the fine wire fusion (first bond), the first bond There has been a problem that the thin wire fusion comes off due to the ball shear load applied to the portion.
【０００９】この発明は上記のような問題点を解消する
ことを課題になされたもので、耐熱性の低いガラスエポ
キシ基板などのために、ヒータブロックの加熱温度を低
くしても効率よく、細線を十分な融着強度でボンドさせ
ることができ、ボールシェア荷重が加わっても細線のボ
ンド外れが生じにくいワイヤボンデイング装置を得るこ
とを目的とする。[0009] This invention has been made to object to solve the above problems, such as for low glass epoxy substrate having heat resistance, good efficiency by lowering the heating temperature of the heater block, fine line It is an object of the present invention to obtain a wire bonding apparatus which can bond a wire with a sufficient fusion strength, and in which a thin wire is not easily debonded even when a ball shear load is applied.
【００１０】[0010]
【課題を解決するための手段】前述の目的を達成するた
めに、本発明にかかるワイヤボンディング装置は、表面
に載置した回路基板を加熱する加熱台と、回路基板面に
対して平行に、且つ、ワイヤボンディングが行われるボ
ンド部に対して局所的に熱風を吹き付けるノズルを備え
た熱風吹き付け装置とを備えている。To SUMMARY OF THE INVENTION To achieve the foregoing objects, Waiyabonde I ing device according to the present invention includes a heating stage for heating the circuit board placed on the surface, parallel to the circuit board surface And the wire bonding is performed
A nozzle attaching can blow a locally hot air against command unit
And and a hot air blowing device.
【００１１】また、本発明にかかるワイヤボンディング
方法は、回路基板を加熱し、前記回路基板面に対して平
行に、且つ、ワイヤボンディングが行われるボンド部に
対して局所的に熱風を吹き付けることを特徴とする方法
である。Further, in the wire bonding method according to the present invention, the circuit board is heated so that the circuit board is parallel to the surface of the circuit board and the bonding portion where the wire bonding is performed.
A method characterized by applying locally can blow hot air against.
【００１２】[0012]
【作用】この発明における熱風吹き付け装置は、加熱手
段で加熱される回路基板面に平行に、且つ、ワイヤボン
ディングが行われるボンド部に対して局所的に熱風を吹
きつけることで、ボンド部を加熱するため、加熱手段の
加熱温度を低下させても、上記ボンド部は十分に加熱さ
れる。また、その加熱は回路基板面に対して平行に、且
つ、ワイヤボンディングが行われるボンド部に対して局
所的に吹き付けられる熱風により行われるため、熱風か
ら熱が効率的にボンド部に加えられ、耐熱性の低い材料
の基板には熱があまり伝わらない。その結果、耐熱性の
低い材料の基板に熱による悪影響を加えることなく、細
線の融着強度は十分得られ、大きなボールシェア荷重が
作用しても細線のボンド外れが減少する。[Action] hot air blowing apparatus in the invention, in parallel to the circuitry substrate surface that will be heated by the heating means, and, Waiyabon
Since the bond is heated by locally blowing hot air to the bond where the bonding is performed, the bond is sufficiently heated even if the heating temperature of the heating unit is reduced. Further, parallel its heating to the circuit board surface,且
The station for the bond where wire bonding is performed
Since the hot air is blown locally, heat is efficiently applied to the bonding portion from the hot air, and the heat is not significantly transmitted to a substrate made of a material having low heat resistance. As a result, the bonding strength of the fine wire can be sufficiently obtained without exerting an adverse effect of heat on the substrate made of a material having low heat resistance, and even if a large ball shear load is applied, detachment of the bond of the fine wire is reduced.
【００１３】[0013]
【実施例】図１はこの発明の実施例を示す概要図であ
り、図１において、１はパイプ２、３を介して外部から
熱供給を受け、例えば１２０℃の低温度に加熱されるヒ
ータブロック、４はヒータブロック１上に載置した耐熱
性の低いガラスエポキシ基板、５ａ、５ｂはガラスエポ
キシ基板４をヒータブロック１上に押圧固定する押え
爪、６ａ、６ｂはガラスエポキシ基板４上に載置したＬ
ＥＤ、ＩＣ等のチップ、７はチップ６ａ、６ｂのボンデ
イングパットまたはガラスエポキシ基板上のリードの端
子にボンドした細線、８はボンド部に熱風を吹き付ける
熱風吹き付け装置である。FIG. 1 is a schematic view showing an embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a heater which is supplied with heat from the outside via pipes 2 and 3 and is heated to a low temperature of, for example, 120.degree. The block 4 is a glass epoxy substrate with low heat resistance placed on the heater block 1, 5 a and 5 b are holding claws for pressing and fixing the glass epoxy substrate 4 on the heater block 1, and 6 a and 6 b are on the glass epoxy substrate 4. L placed
A chip such as an ED or an IC, a thin wire 7 bonded to a bonding pad of the chips 6a and 6b or a lead terminal on a glass epoxy substrate, and a hot air blowing device 8 for blowing hot air to the bonding portion.
【００１４】この熱風吹き付け装置８は、ノズル９、ヒ
ータ１０、このヒータ部に空気を供給する空気路１１、
この空気路１１を開閉する電磁弁１２、ヒータ部の温度
を検出する熱電対１３、この熱電対１３の検出信号に基
づいてソリッドステートリレー１４（以下、ＳＳＲと略
称す）を開閉制御する温度調整器１５、上記ヒータ１０
への通電量を制御する可変抵抗器（以下、スライダック
と称す）１６とで構成されている。１７は上記電磁弁１
２の開閉制御、あるいは不図示の熱源を制御してヒータ
ブロック１に熱供給を行うワイヤボンデイング機本体で
ある。なお、図１から明らかなように、ノズル９から出
る熱風は、ガラスエポキシ基板４に平行にチップに吹き
付けられている。 The hot air blowing device 8 includes a nozzle 9, a heater 10, an air passage 11 for supplying air to the heater,
An electromagnetic valve 12 for opening and closing the air passage 11, a thermocouple 13 for detecting the temperature of the heater section, and a temperature adjustment for controlling opening and closing of a solid state relay 14 (hereinafter abbreviated as SSR) based on a detection signal of the thermocouple 13. Vessel 15, the heater 10
And a variable resistor (hereinafter, referred to as a slydac) 16 for controlling the amount of current supplied to the motor. 17 is the solenoid valve 1
2 is a main body of a wire bonding machine for supplying heat to the heater block 1 by controlling the opening and closing of the heater block 2 or controlling a heat source (not shown). In addition, as is clear from FIG.
Hot air blows on the chip in parallel with the glass epoxy substrate 4.
It is attached.
【００１５】次に上記実施例構成の動作について説明す
る。まず、ヒータブロック１にパイプ２、３を介して不
図示の熱源から熱供給を行い約１２０℃まで加熱する
と、このヒータブロック１の表面に載置した耐熱性のな
いガラスエポキシ基板４も熱的悪影響を受けることなく
所定温度に加熱される。Next, the operation of the above embodiment will be described. First, heat is supplied from a heat source (not shown) to the heater block 1 through pipes 2 and 3 to heat it up to about 120 ° C., and the glass epoxy substrate 4 having no heat resistance placed on the surface of the heater block 1 is also thermally heated. It is heated to a predetermined temperature without being adversely affected.
【００１６】一方、ワイヤボンデイング機本体１７から
の指令信号で電磁弁１２を開き、ヒータ部へ空気を供給
する。このとき、ヒータ部はまだ低温度であり、この低
温度を検出した熱電対１３の検出信号を受けて、温度調
整器１５はＳＳＲ１４を閉成する。このため、ヒータ１
０、ＳＳＲ１４、スライダック１６の直列回路に例えば
ＳＳＲ１４内に設けた電源から電流が流れ、ヒータ１０
を発熱させる。このヒータ１０の発熱で加熱された空気
をノズル９からボンド部に吹き付け、この熱風で直接ボ
ンド部を局部的に所望温度に加熱する。On the other hand, the solenoid valve 12 is opened by a command signal from the wire bonding machine main body 17 to supply air to the heater. At this time, the temperature of the heater section is still low, and the temperature controller 15 closes the SSR 14 in response to the detection signal of the thermocouple 13 that has detected the low temperature. Therefore, the heater 1
A current flows from a power supply provided in the SSR 14 to the series circuit of the
To generate heat. The air heated by the heat generated by the heater 10 is blown from the nozzle 9 to the bonding portion, and the bonding portion is directly heated locally to a desired temperature by the hot air.
【００１７】この加熱状態において、前記図３〜に
示すボンデイングプロセスを実行することにより、耐熱
性の低いガラスエポキシ基板に対し熱的悪影響を全く与
えることなく、細線７を十分な融着強度で融着でき、大
きなボールシェア荷重が加わっても細線７は外れること
はない。In this heating state, by performing the bonding process shown in FIG. 3 to FIG. 3, the thin wire 7 can be fused with a sufficient fusion strength without exerting any adverse thermal effect on the glass epoxy substrate having low heat resistance. The fine wire 7 does not come off even if a large ball shear load is applied.
【００１８】また、このボンデイングプロセスの実行中
は、ヒータ部の温度を熱電対１３で検出しているので、
温度調整器１５は熱電対１３の検出信号によって、ヒー
タ部が規定温度以上になったと判断したときは、ＳＳＲ
１４を開成してヒータ１０への通電を止めるか、そのヒ
ータ１０への通電量を変化させてヒータ部の温度を規定
温度範囲に保持するもので、常に安定した加熱温度でボ
ンデイングプロセスを実行できる。During the execution of the bonding process, the temperature of the heater section is detected by the thermocouple 13, so that
When the temperature controller 15 determines from the detection signal of the thermocouple 13 that the temperature of the heater has reached a specified temperature or higher, the SSR
By opening 14 and stopping the power supply to the heater 10 or changing the amount of power supply to the heater 10 to maintain the temperature of the heater portion within a specified temperature range, the bonding process can always be performed at a stable heating temperature. .
【００１９】[0019]
【発明の効果】以上のように、この発明によれば、加熱
手段で加熱される基板表面に載置したチップに対して回
路基板面に平行に熱風を吹き付けることで、チップを加
熱する熱風吹き付け装置を備えたもので、加熱手段の加
熱温度を低下させても、上記ボンド部は十分に加熱され
る。また、その加熱は回路基板面に対して平行に吹き付
けられる熱風により行われるため、熱風からの熱が効率
的にチップに加えられ、耐熱性の低い材料の基板には熱
があまり伝わらない。その結果、耐熱性の低い材料の基
板に熱による悪影響を加えることなく、細線の融着強度
は向上し、細線のボンド外れの発生が減少するなどの効
果が得られる。As described above, according to the present invention, heating
Times the chip placed on the substrate surface to be heated by means
In Rukoto blowing hot air in parallel with the road surface of the substrate, which was equipped with a pressurized <br/> heat hot-air-blower device chips, also lowering the heating temperature of the heating means, the bonding portion is heated sufficiently You. The heating is sprayed parallel to the circuit board surface.
The heat generated by the hot air is
To be added to the chip, the substrate of low heat resistance material heat
Is not transmitted much . As a result, the base of materials with low heat resistance
Without adding the adverse effect of heat on the plate, fusion strength of fine lines is improved, effects such as the occurrence of bond out fine lines is reduced is obtained.
【図１】図１はこの発明の実施例を示すワイヤボンデイ
ング装置の概要図である。FIG. 1 is a schematic diagram of a wire bonding apparatus showing an embodiment of the present invention.
【図２】図２は従来のワイヤボンデイング装置の一部の
概要図である。FIG. 2 is a schematic view of a part of a conventional wire bonding apparatus.
【図３】図３はボンデイングプロセスの説明図である。FIG. 3 is an explanatory diagram of a bonding process.
１ ヒータブロック（加熱台） ４ ガラスエポキシ基板（基板） ６ チップ ７ 金線（細線） ８ 熱風吹き付け装置 Reference Signs List 1 heater block (heating table) 4 glass epoxy board (substrate) 6 chip 7 gold wire (fine wire) 8 hot air blowing device
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/60 301 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/60 301
Claims (2)
とを結線するワイヤボンディング装置において、 表面に載置した回路基板を加熱する加熱台と、 前記回路基板面に対して平行に、且つ、ワイヤボンディ
ングが行われるボンド部に対して局所的に熱風を吹き付
けるノズルを備えた熱風吹き付け装置と、 を備えたことを特徴とするワイヤボンディング装置。1. A Waiyabonde I ing device for connecting the chip placed on the circuit board and the substrate, and a heated stage to heat the circuit board placed on the surface, parallel to the circuit board surface, And wire bondy
Ring wire bonding apparatus being characterized in that and a hot air blowing device provided with <br/> Keru nozzle with can blow a locally hot air to the bond portion is performed.
基板と結線するワイヤボンディング方法であって、前記
回路基板を加熱し、前記回路基板面に対して平行に、且
つ、ワイヤボンディングが行われるボンド部に対して局
所的に熱風を吹き付けることを特徴とするワイヤボンデ
ィング方法。2. A wire bonding method for connecting a chip mounted on a circuit board to the circuit board, the method comprising: heating the circuit board so as to be parallel to the circuit board surface ;
The station for the bond where wire bonding is performed
Wire bonding method characterized by attaching Tokoro manner can blow hot air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5166659A JP2885614B2 (en) | 1993-07-06 | 1993-07-06 | Wire bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5166659A JP2885614B2 (en) | 1993-07-06 | 1993-07-06 | Wire bonding equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0722458A JPH0722458A (en) | 1995-01-24 |
| JP2885614B2 true JP2885614B2 (en) | 1999-04-26 |
Family
ID=15835363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5166659A Expired - Lifetime JP2885614B2 (en) | 1993-07-06 | 1993-07-06 | Wire bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2885614B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101739752B1 (en) * | 2010-11-05 | 2017-05-26 | 삼성전자 주식회사 | Wire bonding apparatus and method of using the same |
| JP6143486B2 (en) | 2013-02-08 | 2017-06-07 | キヤノン株式会社 | Electrical connection method |
-
1993
- 1993-07-06 JP JP5166659A patent/JP2885614B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0722458A (en) | 1995-01-24 |
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