JP2001110840A - Wire-bonding device and method - Google Patents
Wire-bonding device and methodInfo
- Publication number
- JP2001110840A JP2001110840A JP29086199A JP29086199A JP2001110840A JP 2001110840 A JP2001110840 A JP 2001110840A JP 29086199 A JP29086199 A JP 29086199A JP 29086199 A JP29086199 A JP 29086199A JP 2001110840 A JP2001110840 A JP 2001110840A
- Authority
- JP
- Japan
- Prior art keywords
- cooling
- semiconductor chip
- heating
- mounting member
- air supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体チップと、
この半導体チップを装着した実装部材との結線を行うワ
イヤボンド装置及び方法に関する。[0001] The present invention relates to a semiconductor chip,
The present invention relates to a wire bonding apparatus and a method for performing connection with a mounting member on which the semiconductor chip is mounted.
【０００２】[0002]
【従来の技術】従来より、各種の半導体装置において
は、半導体チップをリードフレームやパッケージ等の実
装部材にダイボンディングによって装着した後、この半
導体チップと実装部材との結線をワイヤボンド装置によ
って行う。図２は、従来のワイヤボンド装置の具体例を
示す正面図である。このワイヤボンド装置では、加熱ス
テージ２０の上にワイヤボンディングを行う被結線部材
２４を載置し、その上方に設置されたスプール１４から
結線材１０を繰り出しながら、キャピラリ１２、Ｘステ
ージ１６、Ｙステージ１８の動作によって結線作業を行
うものである。加熱ステージ２０には、内部にヒータ２
２が配置されており、被結線部材２４を下面から加熱す
ることにより、結線部分の溶着効果を得ることで、結線
強度を増大するものである。2. Description of the Related Art Conventionally, in various semiconductor devices, after a semiconductor chip is mounted on a mounting member such as a lead frame or a package by die bonding, the connection between the semiconductor chip and the mounting member is performed by a wire bonding apparatus. FIG. 2 is a front view showing a specific example of a conventional wire bonding apparatus. In this wire bonding apparatus, a connection target member 24 for performing wire bonding is placed on a heating stage 20, and a capillary 12, an X stage 16, and a Y stage The connection operation is performed by the operation 18. The heating stage 20 has a heater 2 inside.
2 are provided, and by heating the member to be connected 24 from the lower surface, the effect of welding the connected portion is obtained, thereby increasing the connection strength.
【０００３】また、被結線部材２４としては、図３
（Ａ）に示すように、半導体チップ３０を装着したリー
ドフレーム３２が載置される場合や、図３（Ｂ）に示す
ように、半導体チップ３０を装着したパッケージ３４が
載置される場合等がある。そして、加熱ステージ２０上
に被結線部材２４が載置され、下からの加熱によって被
結線部材２４の温度が上昇し、所定の温度に達した段階
で、結線作業が開始される。しかしながら、このような
構成の場合、被結線部材２４を加熱ステージ２０上に載
置してから、所定の温度に達するまでに時間がかかるこ
とになる。[0003] As the connected member 24, FIG.
As shown in FIG. 3A, a case where a lead frame 32 on which a semiconductor chip 30 is mounted is mounted, and a case where a package 34 on which a semiconductor chip 30 is mounted is mounted as shown in FIG. There is. Then, the member to be connected 24 is placed on the heating stage 20, and the temperature of the member to be connected 24 is increased by heating from below, and when the temperature reaches a predetermined temperature, the connection work is started. However, in the case of such a configuration, it takes time from when the connected member 24 is placed on the heating stage 20 to when the temperature reaches a predetermined temperature.
【０００４】そこで図４に示すように、被結線部材２４
を加熱ステージ２０上に載置する前に、被結線部材２４
を予備的に加熱する予備加熱ステージ２８を設けたもの
が提供されている。予備加熱ステージ２８も、加熱ステ
ージ２０と同様に、内部にヒータ２２が配置されてお
り、被結線部材２４を下面から加熱するものである。こ
のワイヤボンド装置では、前の被結線部材２４を結線し
ている間に、次の被結線部材２４を予備加熱ステージ２
８によって加熱することにより、加熱ステージ２０上で
の加熱時間を短縮するものである。また、図４に示すワ
イヤボンド装置では、加熱された被結線部材２４を冷却
するための冷却ステージ２６が設けられている。この冷
却ステージ２６には、上方から冷却用の空気が吹き付け
られており、結線後の被結線部材２４を冷却ステージ２
６に移送し、空気による強制冷却を行うことにより、被
結線部材２４を冷却して次工程に移送するようになって
いる。Therefore, as shown in FIG.
Before placing on the heating stage 20,
Provided with a pre-heating stage 28 for pre-heating the pre-heating. Similarly to the heating stage 20, the preheating stage 28 also has a heater 22 disposed inside, and heats the connected member 24 from the lower surface. In this wire bonding apparatus, the next connected member 24 is connected to the preheating stage 2 while the previous connected member 24 is connected.
By heating with 8, the heating time on the heating stage 20 is shortened. Further, in the wire bonding apparatus shown in FIG. 4, a cooling stage 26 for cooling the heated member to be connected 24 is provided. Cooling air is blown onto the cooling stage 26 from above, and the connected member 24 after the connection is connected to the cooling stage 2.
6 to perform forced cooling by air, thereby cooling the connected member 24 and transferring it to the next step.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上述の
ように加熱ステージ２０や予備加熱ステージ２８によっ
て被結線部材２４を下面、すなわち結線を行う表面と反
対側の面から加熱したのでは、結線を行う被結線部材２
４の表面を所定の値に上昇させるのに熱効率が悪く、時
間がかかるとともに、被結線部材２４自体を表面以上に
加熱することになり、被結線部材２４に熱による悪影響
を与えるという問題がある。また、製造プロセスによっ
ては、結線後の被結線部材２４をすぐに次工程で処理す
る必要があり、この場合、加熱された被結線部材２４を
常温に戻すことが必要となるが、従来は上述のように全
体的に加熱された被結線部材２４を冷却ステージ２６で
冷却するため、冷却に長時間を要するという問題があっ
た。特にセラミック製の部材の場合、冷却に多くの時間
を要しており、製造プロセスの効率化を阻害する要因と
なっていた。However, as described above, if the member to be connected 24 is heated from the lower surface, that is, the surface opposite to the surface to be connected, by the heating stage 20 or the preheating stage 28, the connection is performed. Wired member 2
In order to raise the surface of No. 4 to a predetermined value, the thermal efficiency is poor, it takes time, and the connected member 24 itself is heated more than the surface, which has a problem that the connected member 24 is adversely affected by heat. . Further, depending on the manufacturing process, it is necessary to immediately process the connected member 24 after the connection in the next step. In this case, it is necessary to return the heated connected member 24 to normal temperature. As described above, since the connected member 24 heated as a whole is cooled by the cooling stage 26, there is a problem that a long time is required for cooling. Particularly, in the case of a ceramic member, much time is required for cooling, which has been a factor that hinders the efficiency of the manufacturing process.
【０００６】そこで本発明の目的は、ワイヤボンディン
グの際に、効率よく迅速に半導体チップとその実装部材
との結線部分を加熱して被結線部材にダメージを与える
ことなく結線強度を向上できるとともに、結線後は短時
間で被結線部材を冷却でき、製造工程を効率化できるワ
イヤボンド装置及び方法を提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a wire bonding device that can efficiently and quickly heat a connection portion between a semiconductor chip and its mounting member to improve the connection strength without damaging a member to be connected. It is an object of the present invention to provide a wire bonding apparatus and a method capable of cooling a member to be connected in a short time after the connection and increasing the efficiency of the manufacturing process.
【０００７】[0007]
【課題を解決するための手段】本発明は前記目的を達成
するため、半導体チップと、この半導体チップを装着し
た実装部材との結線を行うワイヤボンド装置において、
前記半導体チップ及び実装部材の表面に熱風を供給する
ことにより結線部分を加熱する加熱手段と、前記半導体
チップ及び実装部材の表面に冷却風を供給することによ
り結線部分を冷却する冷却手段とを有し、前記半導体チ
ップと実装部材とを結線する場合に、前記加熱手段によ
って加熱を行い、結線後に前記冷却手段によって強制冷
却を行うようにしたことを特徴とする。また本発明は、
半導体チップと、この半導体チップを装着した実装部材
との結線を行うワイヤボンド方法において、前記半導体
チップと実装部材とを結線する場合に、前記半導体チッ
プ及び実装部材の表面に熱風を供給して結線部分を加熱
し、結線後、前記半導体チップ及び実装部材の表面に冷
却風を供給することにより結線部分を強制冷却を行うよ
うにしたことを特徴とする。According to the present invention, there is provided a wire bonding apparatus for connecting a semiconductor chip to a mounting member having the semiconductor chip mounted thereon.
Heating means for heating the connection portion by supplying hot air to the surface of the semiconductor chip and the mounting member; and cooling means for cooling the connection portion by supplying cooling air to the surface of the semiconductor chip and the mounting member. When the semiconductor chip and the mounting member are connected, heating is performed by the heating unit, and after the connection, forced cooling is performed by the cooling unit. The present invention also provides
In a wire bonding method for connecting a semiconductor chip and a mounting member on which the semiconductor chip is mounted, when connecting the semiconductor chip and the mounting member, hot air is supplied to a surface of the semiconductor chip and the mounting member to connect the semiconductor chip and the mounting member. After the portion is heated and connected, a cooling air is supplied to the surface of the semiconductor chip and the mounting member to forcibly cool the connected portion.
【０００８】本発明のワイヤボンド装置では、半導体チ
ップと実装部材との結線を行う場合に、まず、加熱手段
によって半導体チップ及び実装部材の表面に熱風を供給
して結線部分を加熱することにより、結線部分を所定の
温度に上昇させる。そして、この所定の温度下で結線作
業を行うことにより、強度の高い結線状態を得る。次
に、結線作業が終わると、冷却手段によって半導体チッ
プ及び実装部材の表面に冷却風を供給して結線部分を冷
却することにより、半導体チップ及び実装部材の温度を
低下させ、次工程の作業を行う上で必要な温度まで低下
させる。このようにして、ワイヤボンディングの際に、
効率よく迅速に半導体チップとその実装部材との結線部
分を加熱して半導体チップ等にダメージを与えることな
く結線強度を向上できるとともに、結線後は短時間で結
線部分を冷却でき、製造工程を効率化することが可能と
なる。In the wire bonding apparatus of the present invention, when the connection between the semiconductor chip and the mounting member is performed, first, the heating means supplies hot air to the surface of the semiconductor chip and the mounting member to heat the connection portion. The connection is raised to a predetermined temperature. Then, by performing the connection work at the predetermined temperature, a connection state with high strength is obtained. Next, when the connection operation is completed, the cooling means supplies cooling air to the surfaces of the semiconductor chip and the mounting member to cool the connection portion, thereby lowering the temperature of the semiconductor chip and the mounting member, and performing the operation in the next step. Reduce the temperature to the temperature required for the operation. In this way, during wire bonding,
Efficiently and quickly heats the connection between the semiconductor chip and its mounting member to improve the connection strength without damaging the semiconductor chip, etc., and allows the connection to be cooled in a short time after connection, thus improving the efficiency of the manufacturing process. Can be realized.
【０００９】また、本発明のワイヤボンド方法でも同様
に、半導体チップと実装部材との結線を行う場合に、ま
ず、半導体チップ及び実装部材の表面に熱風を供給して
結線部分を加熱することにより、結線部分を所定の温度
に上昇させる。そして、この所定の温度下で結線作業を
行うことにより、強度の高い結線状態を得る。次に、結
線作業が終わると、半導体チップ及び実装部材の表面に
冷却風を供給して結線部分を冷却することにより、半導
体チップ及び実装部材の温度を低下させ、次工程の作業
を行う上で必要な温度まで低下させる。このようにし
て、ワイヤボンディングの際に、効率よく迅速に半導体
チップとその実装部材との結線部分を加熱して半導体チ
ップ等にダメージを与えることなく結線強度を向上でき
るとともに、結線後は短時間で結線部分を冷却でき、製
造工程を効率化することが可能となる。Similarly, in the wire bonding method of the present invention, when the connection between the semiconductor chip and the mounting member is performed, first, hot air is supplied to the surface of the semiconductor chip and the mounting member to heat the connection portion. Then, the connection portion is raised to a predetermined temperature. Then, by performing the connection work at the predetermined temperature, a connection state with high strength is obtained. Next, when the connection work is completed, cooling air is supplied to the surface of the semiconductor chip and the mounting member to cool the connection portion, thereby lowering the temperature of the semiconductor chip and the mounting member, and performing the work of the next step. Reduce to required temperature. In this manner, during wire bonding, the connection strength between the semiconductor chip and its mounting member can be efficiently and quickly heated to improve the connection strength without damaging the semiconductor chip and the like, and a short time after connection is achieved. Thus, the connection portion can be cooled, and the manufacturing process can be made more efficient.
【００１０】[0010]
【発明の実施の形態】以下、本発明によるワイヤボンド
装置及び方法の実施の形態について詳細に説明する。図
１は、本発明の実施の形態によるワイヤボンド装置の具
体例を示す正面図である。このワイヤボンド装置では、
キャピラリ１１２と、スプール１１４と、Ｘステージ１
１６と、Ｙステージ１１８と、ボンドステージ１４０
と、熱風供給ノズル１４２と、温度設定器１４４と、コ
ントローラ１４６と、加熱用制御弁１４８と、ヒータ１
５０と、冷却風供給ノズル１５２と、冷却用制御弁１５
４とを有するものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the wire bonding apparatus and method according to the present invention will be described in detail. FIG. 1 is a front view showing a specific example of a wire bonding apparatus according to an embodiment of the present invention. In this wire bond machine,
Capillary 112, spool 114, X stage 1
16, Y stage 118, Bond stage 140
, Hot air supply nozzle 142, temperature setting device 144, controller 146, heating control valve 148, heater 1
50, cooling air supply nozzle 152, cooling control valve 15
And 4.
【００１１】ボンドステージ１４０は、図示しない搬送
機構によって搬送される被結線部材１２４を位置決め載
置するものであり、被結線部材１２４としては、従来例
で説明したように、図３（Ａ）に示すように、半導体チ
ップ３０を装着したリードフレーム３２が載置される場
合や、図３（Ｂ）に示すように、半導体チップ３０を装
着したパッケージ３４が載置される場合等がある。ま
た、結線材１１０は、キャピラリ１１２によってスプー
ル１１４から繰り出され、Ｘステージ１１６及びＹステ
ージ１１８の動作により、被結線部材１２４の所定位置
にボンディングされる。また、熱風供給ノズル１４２
は、ボンドステージ１４０に載置された被結線部材１２
４の表面に熱風を供給し、その結線部分を所定温度に加
熱するものであり、熱風供給ノズル１４２の先端が被結
線部材１２４の表面に近接して配置されている。The bond stage 140 is for positioning and mounting the connected member 124 conveyed by a conveying mechanism (not shown). As described in the conventional example, the connected member 124 is as shown in FIG. As shown, there are cases where the lead frame 32 on which the semiconductor chip 30 is mounted is mounted, and cases where the package 34 on which the semiconductor chip 30 is mounted is mounted as shown in FIG. Further, the connection material 110 is fed out of the spool 114 by the capillary 112, and is bonded to a predetermined position of the connection target member 124 by the operation of the X stage 116 and the Y stage 118. The hot air supply nozzle 142
Is the connected member 12 placed on the bond stage 140
The hot-air supply nozzle 142 supplies hot air to the surface of the wire 4 and heats a connection portion thereof to a predetermined temperature.
【００１２】また、この熱風供給ノズル１４２の基端に
は、コンプレッサ等による加熱用空気供給装置（図示せ
ず）が接続されており、熱風供給ノズル１４２内に圧縮
空気を供給するようになっている。そして、この供給量
は、加熱用制御弁１４８によって制御される。また、こ
の熱風供給ノズル１４２の内部には、ヒータ１５０が配
置されており、加熱用制御弁１４８を介して供給される
空気を加熱するようになっている。そして、この加熱温
度は、温度設定器１４４によって監視され、一定の温度
制御が行われる。A heating air supply device (not shown) such as a compressor is connected to a base end of the hot air supply nozzle 142 so that compressed air is supplied into the hot air supply nozzle 142. I have. The supply amount is controlled by the heating control valve 148. A heater 150 is arranged inside the hot air supply nozzle 142 so as to heat air supplied through a heating control valve 148. The heating temperature is monitored by the temperature setting device 144, and constant temperature control is performed.
【００１３】また、冷却風供給ノズル１５２は、ボンド
ステージ１４０に載置された被結線部材１２４の表面に
冷却用の空気を供給して被結線部材１２４の結線部分を
冷却するものであり、冷却風供給ノズル１５２の先端が
被結線部材１２４の表面に近接して配置されている。ま
た、この冷却風供給ノズル１５２の基端には、コンプレ
ッサ等による冷却用空気供給装置（図示せず）が接続さ
れており、冷却風供給ノズル１５２内に圧縮空気を供給
するようになっている。そして、この供給量は、冷却用
制御弁１５４によって制御される。なお、加熱用空気供
給装置と冷却用空気供給装置とは共用が可能である。ま
た、コントローラ４６は、上述した温度設定器１４４、
加熱用制御弁１４８、及び冷却用制御弁１５４に、それ
ぞれの制御信号を出力することにより、加熱と冷却の制
御を行うようになっている。The cooling air supply nozzle 152 supplies cooling air to the surface of the connected member 124 mounted on the bond stage 140 to cool the connected portion of the connected member 124. The tip of the wind supply nozzle 152 is arranged close to the surface of the connected member 124. A cooling air supply device (not shown) such as a compressor is connected to the base end of the cooling air supply nozzle 152 so as to supply compressed air to the cooling air supply nozzle 152. . The supply amount is controlled by the cooling control valve 154. The heating air supply device and the cooling air supply device can be shared. Further, the controller 46 includes the above-described temperature setting device 144,
By outputting respective control signals to the heating control valve 148 and the cooling control valve 154, heating and cooling are controlled.
【００１４】次に、以上のような構成のワイヤボンド装
置によって実行されるワイヤボンド方法について説明す
る。まず、被結線部材１２４がボンドステージ１４０上
に搬送され、所定の位置に位置決め載置された状態で、
コントローラ１４６は加熱用制御弁１４８を開き、温度
設定器１４４に予め設定した温度で加熱されたヒータ１
５０による熱風を熱風供給ノズル１４２の先端から被結
線部材１２４の表面に供給する。この作業を所定時間を
行うことにより、被結線部材１２４の結線部分を所定の
温度に加熱する。そして、所定時間経過後、コントロー
ラ１４６は加熱用制御弁１４８を閉じ、加熱を終了す
る。Next, a wire bonding method executed by the wire bonding apparatus having the above-described configuration will be described. First, in a state where the connected member 124 is transported onto the bond stage 140 and positioned and mounted at a predetermined position,
The controller 146 opens the heating control valve 148, and sets the temperature of the heater 1 heated at a preset temperature in the temperature setting device 144.
The hot air from the hot air supply nozzle 50 is supplied from the tip of the hot air supply nozzle 142 to the surface of the connected member 124. By performing this operation for a predetermined time, the connection portion of the connected member 124 is heated to a predetermined temperature. Then, after the elapse of a predetermined time, the controller 146 closes the heating control valve 148 and ends the heating.
【００１５】次に、キャピラリ１１２、スプール１１
４、Ｘステージ１１６、及びＹステージ１１８の動作に
より、被結線部材１２４の所定位置に結線材１１０によ
るボンディングする。次に、結線が終了した後、コント
ローラ１４６は冷却用制御弁１５４を開き、冷却用空気
供給装置からの冷却用空気を冷却風供給ノズル１５２の
先端から被結線部材１２４の表面に供給する。そして、
所定時間の冷却が終了すると、被結線部材１２４に対す
る一連の結線作業を終了し、次の工程に移行する。Next, the capillary 112, the spool 11
4. The bonding of the connection member 110 to the predetermined position of the connection target member 124 by the operation of the X stage 116 and the Y stage 118. Next, after the connection is completed, the controller 146 opens the cooling control valve 154 and supplies the cooling air from the cooling air supply device to the surface of the connected member 124 from the tip of the cooling air supply nozzle 152. And
When the cooling for a predetermined time is completed, a series of connection work for the connected member 124 is completed, and the process proceeds to the next step.
【００１６】以上のように、本例のワイヤボンド装置及
び方法では、結線前の被結線部材１２４に対する加熱処
理を被結線部材１２４の表面部分だけに行い、また、結
線後の被結線部材１２４に対する強制冷却処理を被結線
部材１２４の表面部分だけに行うことから、ワイヤボン
ディングを行う場合に、効率よく迅速に半導体チップと
その実装部材との結線部分を加熱して被結線部材１２４
にダメージを与えることなく結線強度を向上できるとと
もに、結線材の接合性を安定でき、また、結線後は短時
間で被結線部材１２４を冷却でき、製造工程を効率化す
ることが可能となる。なお、以上の例において、加熱時
と冷却時とで、例えばボンドステージ１４０あるいは各
ノズル１４２、１５２を移動し、被結線部材１２４の位
置を加熱時には熱風供給ノズル１４２の先端部に合わ
せ、冷却時には冷却風供給ノズル１５２の先端部に合わ
せるようにし、よりピンポイントの加熱や冷却を行うよ
うにしてもよい。As described above, in the wire bonding apparatus and method according to the present embodiment, the heating process is performed on the connected member 124 before the connection is performed only on the surface portion of the connected member 124, and on the connected member 124 after the connection. Since the forced cooling process is performed only on the surface portion of the connection target member 124, when performing wire bonding, the connection portion between the semiconductor chip and the mounting member thereof is efficiently and quickly heated to form the connection target member 124.
The connection strength of the connection material can be improved without damaging the connection member, the connection property of the connection material can be stabilized, and the connection target member 124 can be cooled in a short time after connection, and the manufacturing process can be made more efficient. In the above example, for example, the bond stage 140 or each of the nozzles 142 and 152 is moved between the time of heating and the time of cooling, and the position of the connected member 124 is adjusted to the tip of the hot air supply nozzle 142 at the time of heating. You may make it match with the front-end | tip part of the cooling air supply nozzle 152, and may heat and cool more pinpoints.
【００１７】[0017]
【発明の効果】以上説明したように本発明のワイヤボン
ド装置では、半導体チップと実装部材との結線を行う場
合に、加熱手段によって半導体チップ及び実装部材の表
面に熱風を供給して結線部分を加熱することにより、結
線部分を所定の温度に上昇させ、この所定の温度下で結
線作業を行うとともに、結線作業が終わると、冷却手段
によって半導体チップ及び実装部材の表面に冷却風を供
給して結線部分を冷却することにより、半導体チップ及
び実装部材の温度を低下させるようにした。このため、
ワイヤボンディングの際に、効率よく迅速に半導体チッ
プとその実装部材との結線部分を加熱して半導体チップ
等にダメージを与えることなく結線強度を向上できると
ともに、結線後は加熱した表面だけを短時間で冷却で
き、製造工程を効率化することが可能となる。As described above, in the wire bonding apparatus of the present invention, when the connection between the semiconductor chip and the mounting member is performed, hot air is supplied to the surfaces of the semiconductor chip and the mounting member by the heating means to form the connection portion. By heating, the connection portion is raised to a predetermined temperature, and while performing the connection work at this predetermined temperature, when the connection work is completed, cooling means supplies cooling air to the surfaces of the semiconductor chip and the mounting member. By cooling the connection portion, the temperatures of the semiconductor chip and the mounting member are reduced. For this reason,
During wire bonding, the connection portion between the semiconductor chip and its mounting member can be efficiently and quickly heated to improve the connection strength without damaging the semiconductor chip, etc., and only the heated surface is shortly connected after the connection. , And the manufacturing process can be made more efficient.
【００１８】また、本発明のワイヤボンド方法でも同様
に、半導体チップと実装部材との結線を行う場合に、半
導体チップ及び実装部材の表面に熱風を供給して結線部
分を加熱することにより、結線部分を所定の温度に上昇
させ、この所定の温度下で結線作業を行うとともに、結
線作業が終わると、半導体チップ及び実装部材の表面に
冷却風を供給して結線部分を冷却することにより、半導
体チップ及び実装部材の温度を低下させ、次工程の作業
を行う上で必要な温度まで低下させるようにした。この
ため、ワイヤボンディングの際に、効率よく迅速に半導
体チップとその実装部材との結線部分を加熱して半導体
チップ等にダメージを与えることなく結線強度を向上で
きるとともに、結線後は加熱した表面だけを短時間で冷
却でき、製造工程を効率化することが可能となる。Similarly, in the wire bonding method of the present invention, when the connection between the semiconductor chip and the mounting member is performed, hot air is supplied to the surface of the semiconductor chip and the mounting member to heat the connection portion. The temperature of the semiconductor chip and the mounting member are cooled by supplying cooling air to the surface of the semiconductor chip and the mounting member. The temperatures of the chip and the mounting member are reduced to a temperature required for performing the operation of the next step. Therefore, at the time of wire bonding, the connection portion between the semiconductor chip and its mounting member can be efficiently and quickly heated to improve the connection strength without damaging the semiconductor chip and the like, and after the connection, only the heated surface is heated. Can be cooled in a short time, and the manufacturing process can be made more efficient.
【図１】本発明の実施の形態によるワイヤボンド装置の
具体例を示す正面図である。FIG. 1 is a front view showing a specific example of a wire bonding apparatus according to an embodiment of the present invention.
【図２】従来のワイヤボンド装置の第１の具体例を示す
正面図である。FIG. 2 is a front view showing a first specific example of a conventional wire bonding apparatus.
【図３】従来のワイヤボンド装置の第２の具体例を示す
正面図である。FIG. 3 is a front view showing a second specific example of the conventional wire bonding apparatus.
【図４】ワイヤボンド装置で結線される被結線部材の具
体例を示す正面図である。FIG. 4 is a front view showing a specific example of a connected member to be connected by a wire bonding apparatus.
１１０……結線材、１１２……キャピラリ、１１４……
スプール、１１６……Ｘステージ、１１８……Ｙステー
ジ、１４０……ボンドステージ、１４２……熱風供給ノ
ズル、１４４……温度設定器、１４６……コントロー
ラ、１４８……加熱用制御弁、１５０……ヒータ、１５
２……冷却風供給ノズル、１５４……冷却用制御弁。110 ... connection material, 112 ... capillary, 114 ...
Spool, 116 X stage, 118 Y stage, 140 Bond stage, 142 Hot air supply nozzle, 144 Temperature setting device, 146 Controller, 148 Control valve for heating, 150 Heater, 15
2 ... Cooling air supply nozzle, 154 ... Cooling control valve.
Claims (6)
着した実装部材との結線を行うワイヤボンド装置におい
て、 前記半導体チップ及び実装部材の表面に熱風を供給する
ことにより結線部分を加熱する加熱手段と、 前記半導体チップ及び実装部材の表面に冷却風を供給す
ることにより結線部分を冷却する冷却手段とを有し、 前記半導体チップと実装部材とを結線する場合に、前記
加熱手段によって加熱を行い、結線後に前記冷却手段に
よって強制冷却を行うようにした、 ことを特徴とするワイヤボンド装置。1. A wire bonding apparatus for connecting a semiconductor chip and a mounting member on which the semiconductor chip is mounted, comprising: heating means for heating a connection portion by supplying hot air to surfaces of the semiconductor chip and the mounting member. A cooling unit that cools a connection portion by supplying cooling air to the surfaces of the semiconductor chip and the mounting member, and when the semiconductor chip and the mounting member are connected, heating is performed by the heating unit; The wire bonding apparatus, wherein forced cooling is performed by the cooling unit after the connection.
置された半導体チップ及び実装部材の表面に熱風を供給
する熱風供給ノズルと、前記熱風供給ノズルに設けられ
たヒータと、前記ヒータの温度を制御する温度設定器
と、前記熱風供給ノズルに加熱用の圧縮空気を供給する
加熱用空気供給装置と、前記加熱用空気供給装置から熱
風供給ノズルに供給される圧縮空気の量を制御する加熱
用制御弁とを有し、 前記冷却手段は、ボンドステージ上に配置された半導体
チップ及び実装部材の表面に冷却風を供給する冷却風供
給ノズルと、前記冷却風供給ノズルに冷却用の圧縮空気
を供給する冷却用空気供給装置と、前記冷却用空気供給
装置から冷却風供給ノズルに供給される圧縮空気の量を
制御する冷却用制御弁とを有し、 さらに前記温度設定器、加熱用制御弁、及び冷却用制御
弁を制御するコントローラを有することを特徴とする請
求項１記載のワイヤボンド装置。2. The heating means includes: a hot air supply nozzle for supplying hot air to surfaces of a semiconductor chip and a mounting member disposed on a bond stage; a heater provided on the hot air supply nozzle; A temperature setting device for controlling; a heating air supply device for supplying compressed air for heating to the hot air supply nozzle; and a heating device for controlling an amount of compressed air supplied from the heating air supply device to the hot air supply nozzle. A control valve, wherein the cooling means supplies a cooling air supply nozzle for supplying cooling air to the surface of the semiconductor chip and the mounting member disposed on the bond stage, and supplies compressed air for cooling to the cooling air supply nozzle. A cooling air supply device for supplying; a cooling control valve for controlling an amount of compressed air supplied from the cooling air supply device to a cooling air supply nozzle; Heating control valves, and wire bonding apparatus according to claim 1, wherein a controller for controlling the cooling control valve.
気供給装置とを共通の空気供給装置によって構成したこ
とを特徴とする請求項２記載のワイヤボンド装置。3. The wire bonding apparatus according to claim 2, wherein said heating air supply device and said cooling air supply device are constituted by a common air supply device.
る半導体パッケージであることを特徴とする請求項１記
載のワイヤボンド装置。4. The wire bonding apparatus according to claim 1, wherein the mounting member is a semiconductor package on which a semiconductor chip is mounted.
るリードフレームであることを特徴とする請求項１記載
のワイヤボンド装置。5. The wire bonding apparatus according to claim 1, wherein the mounting member is a lead frame on which a semiconductor chip is mounted.
着した実装部材との結線を行うワイヤボンド方法におい
て、 前記半導体チップと実装部材とを結線する場合に、前記
半導体チップ及び実装部材の表面に熱風を供給して結線
部分を加熱し、結線後、前記半導体チップ及び実装部材
の表面に冷却風を供給することにより結線部分を強制冷
却を行うようにした、 ことを特徴とするワイヤボンド方法。6. A wire bonding method for connecting a semiconductor chip and a mounting member on which the semiconductor chip is mounted, wherein when connecting the semiconductor chip and the mounting member, hot air is applied to the surfaces of the semiconductor chip and the mounting member. And heating the connection portion, and after the connection, supplying cooling air to the surface of the semiconductor chip and the mounting member, thereby forcibly cooling the connection portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29086199A JP2001110840A (en) | 1999-10-13 | 1999-10-13 | Wire-bonding device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29086199A JP2001110840A (en) | 1999-10-13 | 1999-10-13 | Wire-bonding device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001110840A true JP2001110840A (en) | 2001-04-20 |
Family
ID=17761452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29086199A Pending JP2001110840A (en) | 1999-10-13 | 1999-10-13 | Wire-bonding device and method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001110840A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008155013A1 (en) * | 2007-06-19 | 2008-12-24 | Ultrasonics Steckmann Gmbh | Ultrasonic welding station |
| CN101800182A (en) * | 2009-02-06 | 2010-08-11 | 株式会社瑞萨科技 | Method of manufacturing semiconductor device, and wire bonder |
| CN102842516A (en) * | 2011-06-23 | 2012-12-26 | 富士电机株式会社 | Manufacture method of semiconductor device |
| WO2013099383A1 (en) * | 2011-12-27 | 2013-07-04 | 株式会社カイジョー | Wire bonding device and wire bonding method |
| KR101739752B1 (en) * | 2010-11-05 | 2017-05-26 | 삼성전자 주식회사 | Wire bonding apparatus and method of using the same |
-
1999
- 1999-10-13 JP JP29086199A patent/JP2001110840A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008155013A1 (en) * | 2007-06-19 | 2008-12-24 | Ultrasonics Steckmann Gmbh | Ultrasonic welding station |
| CN101800182A (en) * | 2009-02-06 | 2010-08-11 | 株式会社瑞萨科技 | Method of manufacturing semiconductor device, and wire bonder |
| US8881966B2 (en) | 2009-02-06 | 2014-11-11 | Renesas Electronics Corporation | Method of manufacturing semiconductor device, and wire bonder |
| KR101739752B1 (en) * | 2010-11-05 | 2017-05-26 | 삼성전자 주식회사 | Wire bonding apparatus and method of using the same |
| CN102842516A (en) * | 2011-06-23 | 2012-12-26 | 富士电机株式会社 | Manufacture method of semiconductor device |
| WO2013099383A1 (en) * | 2011-12-27 | 2013-07-04 | 株式会社カイジョー | Wire bonding device and wire bonding method |
| JP2013135111A (en) * | 2011-12-27 | 2013-07-08 | Kaijo Corp | Wire bonding device and wire bonding method |
| CN103814433A (en) * | 2011-12-27 | 2014-05-21 | 株式会社华祥 | Wire bonding device and wire bonding method |
| KR101511893B1 (en) | 2011-12-27 | 2015-04-13 | 가부시끼가이샤가이죠 | Wire bonding device and wire bonding method |
| CN103814433B (en) * | 2011-12-27 | 2017-03-01 | 株式会社华祥 | Lead wire connecting apparatus and lead connecting method |
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