JPS63278251A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS63278251A JPS63278251A JP62112756A JP11275687A JPS63278251A JP S63278251 A JPS63278251 A JP S63278251A JP 62112756 A JP62112756 A JP 62112756A JP 11275687 A JP11275687 A JP 11275687A JP S63278251 A JPS63278251 A JP S63278251A
- Authority
- JP
- Japan
- Prior art keywords
- output
- pad
- buffer
- delay
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 239000000872 buffer Substances 0.000 claims abstract description 38
- 239000003990 capacitor Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000003491 array Methods 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- UFHLMYOGRXOCSL-UHFFFAOYSA-N isoprothiolane Chemical compound CC(C)OC(=O)C(C(=O)OC(C)C)=C1SCCS1 UFHLMYOGRXOCSL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11898—Input and output buffer/driver structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Pulse Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、論理ゲート単位で素子を何列かに配置しこ
れらゲートの相互結線によって必要とする機能を実現す
る半導体集積回路(以下ゲートアレイと呼ぶ)において
、遅延の付は方に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a semiconductor integrated circuit (hereinafter referred to as a gate array) in which elements are arranged in several rows in units of logic gates and the required functions are realized by interconnecting these gates. ), it concerns how to add a delay.
合、fbl f′i出力の場合で、図中III ij人
カバッファ、(21$−j出力バッ7ア、(31け人出
カパッドである。In the case of fbl f'i output, in the figure, there are III ij output buffers, (21$-j output buffers, and (31 output buffers).
第8図は一般の回路における遅延回路で、qυと02J
はバッファ、Q3)、、t141はそれぞれ遅延回路の
抵抗と容量である。Figure 8 shows a delay circuit in a general circuit, where qυ and 02J
are the buffer, Q3), and t141 are the resistance and capacitance of the delay circuit, respectively.
第4図talはゲートアレイにお−て遅延を付けるため
に用いられる回路で、図中、ば及び(22ハDB’/、
1はクロック大刀、□□□はDA TA 久方、(ハ)
は一段目のD1r/の 出力、(至)は2段目のD%の
出力、第4図(b+は各人・出方の波形図と示し、額は
出力四に対する出力−の遅延タイムを示す。FIG. 4 tal is a circuit used to add a delay in the gate array.
1 is clock sword, □□□ is DA TA Hisakata, (c)
is the output of D1r/ of the first stage, (to) is the output of D% of the second stage, Figure 4 (b+ shows the waveform diagram of each person and output, and the amount shows the delay time of output - for output 4) show.
次に、従来のゲートアレイにおける遅延タイムの付は方
について説明す、る。このような従来のゲートアレイで
に、第2図IJLIの入力の場合、入カバッファ1!1
のみパッドに接続されており、fb+の出力の場合、出
カバッファ121のみパッドに接続されているので、第
8図に示すような遅延回路が作られない口そのため、第
1図1alに示すようにDF4等を用いて、一段目のD
F/Fの出力を2段目のDF/、、の入力データとする
ことにより、2段目の出力C2fH−1:1段目の出力
(至)に対しくハ)だけ遅延タイムを持たせるようにし
、これをゲートアレイでは利用しているが、この場合箱
のようにクロック単位の遅延タイムしか作れない。Next, the method of assigning delay time in a conventional gate array will be explained. In such a conventional gate array, in the case of the input of IJLI in Fig. 2, the input buffer 1!1
In the case of fb+ output, only the output buffer 121 is connected to the pad, so a delay circuit like the one shown in FIG. 8 cannot be created. Therefore, as shown in FIG. Using DF4 etc., first stage D
By using the output of the F/F as the input data of the second stage DF/, , the second stage output C2fH-1: has a delay time of C) relative to the first stage output (to). This is used in gate arrays, but in this case, you can only create a delay time in clock units like a box.
また、大きな遅延タイムを得るためには多段のDF/F
が必要となり、回路規模も大きくなってしまう。In addition, in order to obtain a large delay time, multi-stage DF/F
is required, and the circuit scale becomes large.
上のように構成これていたので、遅延口Fl11を作る
ことか出来ず、DF/F等を用いて遅延タイムを作りこ
れを利用することはできるが、この遅延タイムはクロッ
ク単位のものしか作れない。Since the configuration is as above, it is not possible to create the delay port Fl11, and it is possible to create a delay time using DF/F etc. and use it, but this delay time can only be created in clock units. do not have.
また、大きな遅延タイムを付けるとき、DF/IF等が
何段も必要となり回路の規模が大きくなるという問題点
があった。Furthermore, when adding a large delay time, there is a problem that many stages of DF/IF etc. are required, resulting in an increase in the scale of the circuit.
この発明は上記のような問題点を解決するためになされ
たもので、ゲートアレイの入出力において、入カバッフ
ァ、出力バッファともパッドに接続し、かつ入カバッフ
ァと出力バツ7アを同時に動作させ、更にパッドには外
付けに容量を付けることにより遅延タイムを付けるよう
にしたことを目的とする。This invention was made in order to solve the above-mentioned problems, and in the input/output of the gate array, both the input buffer and the output buffer are connected to the pad, and the input buffer and the output buffer are operated simultaneously. Furthermore, it is an object of the present invention to provide a delay time by attaching an external capacitor to the pad.
この発明に係るゲートアレイにおける入出力は、入カバ
ッファ、出カバッファ2 ハツトに接続し、かつ入カバ
ッファと出力バツ7アを同時に動作させ、更にパッドに
外付けに容量を付けることにより遅延タイムを付けたも
のである。Input/output in the gate array according to the present invention is achieved by connecting an input buffer and an output buffer 2 to the pad, operating the input buffer and output buffer simultaneously, and adding a delay time by attaching an external capacitor to the pad. It is something that
この発明におけるゲートアレイの入出力は、入カバッフ
ァと出カバッファをパッドに接続し、かつ、人カバッフ
ァと出力バッファを同時に動作させ、更にパッドには外
付けに容量を付けることにより遅延タイムが付くように
したものである。The input/output of the gate array in this invention is achieved by connecting the input buffer and the output buffer to the pad, operating the input buffer and the output buffer simultaneously, and adding a delay time by attaching an external capacitor to the pad. This is what I did.
以下、この発明の一実施例を図について説明する。第1
図において、tEはゲートアレイの遅延回路として第1
図1alのような回路を構成するバッファ、+21d出
力バツフア、13H;を入出力パッド、141は外付け
の容量である。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, tE is the first delay circuit of the gate array.
Buffers constituting a circuit as shown in FIG. 1al include a +21d output buffer, 13H; an input/output pad, and 141 an external capacitor.
次に、実施例におけるゲートアレイの遅延タイムの付は
方について説明する。入出力において、入カバツファm
、ffjカバツ7ア121 ト’4. [パッド131
に接続し、かつ、入カバツフジ1と出カバッファ(2)
を同時に動作させる。更にパッドtel I/Cは外付
けに容量(4)を付けることにより遅延タイムを付ける
ことができる。この遅延タイムは容量(41と第1図(
a、1の回路インピーダンスの組み合せによって、アナ
ログ的な値をとることができる。Next, a description will be given of how to assign the delay time of the gate array in the embodiment. In input/output, input cover m
, ffj 7a121 t'4. [Pad 131
and input buffer Fuji 1 and output buffer (2)
operate at the same time. Furthermore, a delay time can be added to the pad tel I/C by adding an external capacitor (4). This delay time is the capacity (41) and Figure 1 (
By combining the circuit impedances a and 1, an analog value can be taken.
なお、上記実施例では、出力バッファ會全く変更せず容
量を外付けに付けることにより遅延タイムを付けたもの
を示したが、出カバッファを構成するトランジスタが第
5図1alのように、複数のトランジスタにより構成さ
れているようなゲートアレイにおいて、変形例として遅
延回路として用いる場合に第6凶[b+に示すようにこ
の一部のトランジスタだけをパッドに接続することによ
り、遅延用容tを駆動するインバータの出力インピーダ
ンスを高くすることもでき、このように構成することに
よってよシ遅延タイムの大きい遅延回路が構成できる。In the above embodiment, a delay time is added by adding a capacitor externally without changing the output buffer system at all. However, as shown in FIG. In a gate array composed of transistors, when used as a delay circuit as a modified example, the delay capacitor t is driven by connecting only some of the transistors to the pads as shown in the 6th line [b+]. It is also possible to increase the output impedance of the inverter, and by configuring it in this way, a delay circuit with a long delay time can be configured.
以上のようにこの発明によれば、ゲートアレイの入カバ
ツファ、出力バツファf ハツトに接続し、力1つ人カ
バッファと出カバッファを同時に動作させ、パッドには
外付けに容量を付けるように構成したので、ゲートアレ
イにアナログ的な値の遅延タイムを付けることができる
という効果がある。As described above, according to the present invention, the input and output buffers of the gate array are connected to the pads, the input buffer and the output buffer are simultaneously operated with one force, and the pads are configured to have external capacitors attached to them. Therefore, there is an effect that a delay time of an analog value can be added to the gate array.
第1図はこの発明の一実施例によるゲートアレイの遅延
回路で、(alは実体簡略配置図、(blは結線図、第
2図は従来のゲートアレイの配置図で、(IL)は入力
状態、fblは出力状態、第8図は従来の遅延回路図、
第4図(&1は従来のゲートアレイの遅延を付けるため
に利用されているDF/、vcよる回路図、fblはそ
れら出力によって作られる遅延波形図、第5図tai
fblはこの発明の他の実施例の実体配置図である。
図において、HIH人カバカバッファ21ij出力バツ
フア(31ハ入出力パツド、(4)ハ外付は容量である
。
なお、図中同一符号は、同−又は相当部分を示す。FIG. 1 shows a delay circuit of a gate array according to an embodiment of the present invention, (al is a simplified actual layout diagram, (bl is a wiring diagram, FIG. 2 is a layout diagram of a conventional gate array, and (IL) is an input state, fbl is the output state, FIG. 8 is a conventional delay circuit diagram,
Figure 4 (&1 is a circuit diagram of DF/VC used to add delay to a conventional gate array, fbl is a delay waveform diagram created by these outputs, Figure 5
fbl is an actual layout diagram of another embodiment of the present invention. In the figure, the output buffer (31) is an input/output pad, and (4) is an external capacitor. In the figure, the same reference numerals indicate the same or equivalent parts.
Claims (2)
ゲートの相互結線によつて必要とする機能を実現する半
導体集積回路に於て、入力バッファと出力バッファを双
方ともパッドに接続し、容量を外付けでパッドに付け、
かつ入カバッファと出力バッファを同時に動作させるこ
とによつて、遅延を付けることを特徴とする半導体集積
回路。(1) In a semiconductor integrated circuit in which elements are arranged in several rows in units of logic gates and the required functions are realized by interconnecting these gates, both the input buffer and the output buffer are connected to pads. , attach the capacitor externally to the pad,
A semiconductor integrated circuit characterized in that a delay is added by simultaneously operating an input buffer and an output buffer.
を複数のトランジスタを並列接続することにより構成し
、通常の出力バッファとして用いる場合には、全数のト
ランジスタを出力端子に接続し、遅延回路として用いる
場合にはそのうちの一部のもののみを前記パッドに接続
することを特徴とする特許請求の範囲第1項記載の半導
体集積回路。(2) When the output transistor that constitutes the output buffer is configured by connecting multiple transistors in parallel and used as a normal output buffer, when all transistors are connected to the output terminal and used as a delay circuit. 2. The semiconductor integrated circuit according to claim 1, wherein only some of the pads are connected to the pad.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62112756A JPS63278251A (en) | 1987-05-09 | 1987-05-09 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62112756A JPS63278251A (en) | 1987-05-09 | 1987-05-09 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63278251A true JPS63278251A (en) | 1988-11-15 |
Family
ID=14594759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62112756A Pending JPS63278251A (en) | 1987-05-09 | 1987-05-09 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63278251A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH029150A (en) * | 1988-06-28 | 1990-01-12 | Sharp Corp | Semiconductor gate array device |
-
1987
- 1987-05-09 JP JP62112756A patent/JPS63278251A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH029150A (en) * | 1988-06-28 | 1990-01-12 | Sharp Corp | Semiconductor gate array device |
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