JPS63275194A - Formation of metallic pattern - Google Patents
Formation of metallic patternInfo
- Publication number
- JPS63275194A JPS63275194A JP11150487A JP11150487A JPS63275194A JP S63275194 A JPS63275194 A JP S63275194A JP 11150487 A JP11150487 A JP 11150487A JP 11150487 A JP11150487 A JP 11150487A JP S63275194 A JPS63275194 A JP S63275194A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- conductive film
- etching
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000007772 electroless plating Methods 0.000 claims abstract description 12
- 238000009713 electroplating Methods 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 7
- 239000003795 chemical substances by application Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 4
- 239000005020 polyethylene terephthalate Substances 0.000 abstract description 4
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- -1 polyethylene terephthalate Polymers 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 41
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical class CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000011962 puddings Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-M terephthalate(1-) Chemical compound OC(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-M 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】 (技術分野) この発明は金属パターン形成方法に関するものである。[Detailed description of the invention] (Technical field) The present invention relates to a metal pattern forming method.
さらに詳しくは、この発明は、プリント配線基板、装飾
板、銘板1等としても有用な金属パターンの高効率、高
品質での製造を可能とする金属パターンの形成方法に関
するものである。More specifically, the present invention relates to a method of forming a metal pattern that enables highly efficient and high-quality production of metal patterns useful as printed wiring boards, decorative plates, nameplates 1, etc.
(背景技術)
従来、プリント配線板の製造においては、装置の小型化
や低価格化のためにフレキシブルプリント板が用いられ
てきている。また、最近では、フレキシブルプリンI・
板に直接ICチップを搭載するデツプオンボードの方式
がとられつつもある。(Background Art) Conventionally, flexible printed boards have been used in the manufacture of printed wiring boards in order to downsize and lower the cost of devices. In addition, recently, flexible pudding I
A deep-on-board method, in which IC chips are mounted directly on the board, is also being adopted.
この場合には、パターン幅がピン間3木程度という高精
度、高精細化が必要であり、またボンディング等の工程
において剥離を生じないための強いパターン密着強度が
必要とされている。In this case, high precision and high definition are required, with a pattern width of about three pins, and strong pattern adhesion strength is required to prevent peeling during bonding and other processes.
このようなフレキシブルプリントの製造法としては、
(ア) ベースフィルムと銀箔をラミネート加工した後
に、スクリーン印刷あるいは水溶性のドライフィルムを
用いてパターン形成してエツチングする方法、
(イ) ベースフィルム上にドライフィルムやスクリー
ン印刷等の手段によってレジストやインクのパターンを
形成した後に無電解メッキや電解メツキにより銅を析出
させ、次いでマスクパターンを除去することにより導体
パターンを形成するアディ・ティブ法や、あるいは、
(つ) ベースフィルムにクラスターイオンビーム等に
よって気相で銅薄膜を形成し、サブトラクティブ法によ
って導体パターンを形成する方法などが知られている。Manufacturing methods for such flexible prints include (a) a method in which a base film and silver foil are laminated, and then a pattern is formed using screen printing or a water-soluble dry film and etched; (b) a method in which a pattern is formed on the base film and then etched; An additive method in which a resist or ink pattern is formed by means such as dry film or screen printing, then copper is deposited by electroless plating or electrolytic plating, and then a conductor pattern is formed by removing the mask pattern, or (1) A method is known in which a copper thin film is formed on a base film in a vapor phase using a cluster ion beam or the like, and a conductor pattern is formed by a subtractive method.
しかしながら、これらの製造法には依然として多くの問
題点が残されている。まず、(ア)ラミネート法におい
ては、銀箔を薄くすることができず、厚い銀箔をエツチ
ングするため高精細化が困難であり、しかも、各種の金
属導体を用いる場合には、エツチング剤によってマスキ
ング材が溶解し、多様な金属膜を用いることが難しい。However, many problems still remain with these manufacturing methods. First of all, in (a) the lamination method, the silver foil cannot be made thinner, and high definition is difficult to achieve because thick silver foil is etched.Moreover, when using various metal conductors, the masking material is removed by the etching agent. dissolves, making it difficult to use a variety of metal films.
次の(イ)アディティブ法は、プラスチックフィルム表
面に電解あるいは無電解メッキを行うために高濃度クロ
ム酸と硫酸との混合液によって表面処理エツチングする
ことが必要となる。The following (a) additive method requires surface treatment and etching using a mixed solution of high concentration chromic acid and sulfuric acid in order to perform electrolytic or electroless plating on the surface of a plastic film.
これらの処理剤は公害を誘発するもので、その対策のた
めの製造工程、装置が複雑になり、コスト高となる。These treatment agents induce pollution, and the manufacturing process and equipment required to counteract it become complicated, resulting in high costs.
さらに(つ)気相法、サブトラクティブ法の場合には、
従来のものは薄膜形成速度が遅く、所望の膜厚を得るた
めには長時間の操作が必要てあって、生産性が良好でな
く、コスト高となっていた。Furthermore, in the case of gas phase method and subtractive method,
Conventional methods have a slow film formation rate and require long operations to obtain the desired film thickness, resulting in poor productivity and high costs.
装飾用プレート、あるいは銘板についても同様の方法に
よって製造することができるか、やはり上記した通りの
問題を解消していないのか現状である。また、蒸着法に
よって金廊膜を形成する場合には、該金属膜の付着性が
悪く、しかも膜厚を厚くすることが容易ではなかった。At present, it is unclear whether decorative plates or nameplates can be manufactured using the same method, and whether the above-mentioned problems still remain. Furthermore, when forming the metal film by vapor deposition, the adhesion of the metal film is poor and it is not easy to increase the film thickness.
このため、従来のラミネート法、アディティブ法、さら
には気相法の欠点を改善した改良された金属パターンプ
リント板とその製造方法の実現が望まれていた。For this reason, it has been desired to realize an improved metal pattern printed board and its manufacturing method that overcomes the drawbacks of conventional lamination methods, additive methods, and even vapor phase methods.
(発明の目的)
この発明は、以上の通りの事情を鑑みてなされたもので
あり、生産性に優れ、高品質の金属パターンを効率的に
製造することのできる新しい金属パターン形成方法を提
供することを目的としている。(Objective of the Invention) The present invention has been made in view of the above-mentioned circumstances, and provides a new metal pattern forming method that is highly productive and capable of efficiently manufacturing high-quality metal patterns. The purpose is to
さらに詳しくは、この発明は、高精細、多層の金属パタ
ーンを有するフレキシブルプリント配線板、さらには装
飾用プレー1〜、銘板と、その製造方法を提供すること
を目的としている。More specifically, it is an object of the present invention to provide a flexible printed wiring board having a high-definition, multilayer metal pattern, as well as a decorative play plate 1 to a nameplate, and a method for manufacturing the same.
(発明の開示)
この発明の金属パターン形成方法は、上記の目的を実現
するために、基板表面に導電性膜を設は電解メッキまた
は無電解メッキを行った後にマスクパターンを形成して
エツチングを行うことを特徴としている。(Disclosure of the Invention) In order to achieve the above object, the metal pattern forming method of the present invention includes forming a conductive film on the surface of a substrate, performing electrolytic plating or electroless plating, and then forming a mask pattern and performing etching. It is characterized by doing.
また、この発明は、関連する方法として、基板表面に導
電性膜を設け、マスクパターンを形成した後にエツチン
グを行い、マスク除去して得た導電性膜パターンに電解
または無電解メッキを行うことを特徴としてもいる。Further, as a related method, the present invention provides a method in which a conductive film is provided on the surface of a substrate, a mask pattern is formed, etching is performed, and the conductive film pattern obtained by removing the mask is subjected to electrolytic or electroless plating. It is also a feature.
この発明の方法は、無電解メッキ、または電解メッキの
前工程として導電性の下地膜を設けることにより、従来
のメッキ工程では欠くことのできなかったプラスチック
表面のクロム酸/硫酸による処理を不用とし、無公害化
するという大きな利点を有し金属パターンの形状、膜厚
のコントロールが容易である。The method of the present invention eliminates the need to treat plastic surfaces with chromic acid/sulfuric acid, which was indispensable in conventional plating processes, by providing a conductive base film as a pre-process of electroless plating or electrolytic plating. It has the great advantage of being non-polluting, and the shape and film thickness of the metal pattern can be easily controlled.
この発明の方法を、添付した図面に沿ってさらに詳しく
説明する。第1図は、この発明の方法を示したものであ
る。The method of the present invention will be explained in more detail with reference to the attached drawings. FIG. 1 shows the method of the invention.
この第1図に示したように、
(a)たとえば、25〜75μm程度の厚みのPET(
ポリエヂレンテレフタレー1−)の基板(1)の表面に
、直接、あるいは離型層を介して導電性膜(2)を形成
する。As shown in Figure 1, (a) For example, PET with a thickness of about 25 to 75 μm (
A conductive film (2) is formed on the surface of a substrate (1) of polyethylene terephthalate (1-) directly or via a release layer.
基板(1)としては、PETに限定されることなく、ポ
リエステル、ナイロン、ポリアミド、ポリイミド、ポリ
スルホンなどの比較的耐熱性の大きいプラスチックのフ
ィルム、板体等の任意のものを用いることができる。積
層板であってもよい。The substrate (1) is not limited to PET, and any film or plate of relatively heat-resistant plastic such as polyester, nylon, polyamide, polyimide, polysulfone, etc. can be used. It may also be a laminate.
また、離型層としては、熱硬化性樹脂やUV硬化樹脂を
用いることができる。プリント回路として用いる場合に
は、部品搭載時のハンダ付は時に十分な導電性を有する
ように、この離型層の材質と= 6−
膜厚を適宜に選択する。Further, as the mold release layer, a thermosetting resin or a UV curing resin can be used. When used as a printed circuit, the material and thickness of the release layer are appropriately selected so that soldering during component mounting may have sufficient conductivity.
S h O2や′r″102などの透明無機化合物を用
いることにより、保護膜とすることもできる。この場合
にも、たとえば装飾用パターンを得る場合には、その膜
厚を厚くし、一方プリント回路等の導体パターンを得る
場合には、50〜100Aの極薄層とすることが好まし
い。A protective film can also be formed by using a transparent inorganic compound such as S When obtaining a conductor pattern such as a circuit, it is preferable to use an extremely thin layer of 50 to 100 A.
導電性膜(2)は、真空蒸着、プラズマイオンビーム製
膜法等の気相プロセスとして形成することができる。場
合によっては湿式メッキで行ってもよい。また、基板(
1)に対して弱い密着性を持つ金(八〇)などの金属の
極薄膜を形成した後、導電性膜(2)を形成してもよい
。The conductive film (2) can be formed by a vapor phase process such as vacuum evaporation or plasma ion beam deposition. In some cases, wet plating may be used. In addition, the board (
The conductive film (2) may be formed after forming an extremely thin film of a metal such as gold (80) which has weak adhesion to the film (1).
この導電性膜(2)としては、銅(Cu)、アルミニウ
ム(八1)、銀(八g)、二・ンクル(Ni) 、ヂタ
ン(Ti) 、亜鉛(Zn)などの金属の任意のものが
用いられる。酸化インジウム、酸化スズ、ITOなどの
無機物であってもよい。ITOは透明薄膜となることか
ら、干渉色を持った装飾用プレー+−1あるいはプリン
1−回路のいずれの場合にも有用である。電気泳動法に
よって着色されなITOを用いることもできる。This conductive film (2) may be any metal such as copper (Cu), aluminum (81), silver (8g), nickel (Ni), titanium (Ti), zinc (Zn), etc. is used. Inorganic materials such as indium oxide, tin oxide, and ITO may also be used. Since ITO is a transparent thin film, it is useful for either decorative play +-1 or print 1- circuits with interference colors. It is also possible to use ITO that is not colored by electrophoresis.
この導電性膜(2)の厚さは、好適には0.5〜1μm
程度である。The thickness of this conductive film (2) is preferably 0.5 to 1 μm.
That's about it.
(b)次いで、導電性膜(2)を基板(1)に配設した
積層体には、電解または無電解メッキによって銅(Cu
)、ニッケル(旧)などの金属膜(3)を形成する。メ
ッキ層の厚さは、格別に限定的なものではなく、プリン
ト回路の導体の場合には、たとえば、1〜30μm程度
と厚くすることもできる。(b) Next, the laminate in which the conductive film (2) is disposed on the substrate (1) is coated with copper (Cu) by electrolytic or electroless plating.
), a metal film (3) of nickel (old), etc. is formed. The thickness of the plating layer is not particularly limited, and in the case of a printed circuit conductor, it can be as thick as, for example, about 1 to 30 μm.
(C)このメッキ金属Wi(3)の上には、次いで、マ
スキング材によってマスクパターン(4)を形成する。(C) On this plated metal Wi (3), a mask pattern (4) is then formed using a masking material.
このマスキング材としては、水溶性のデンプン、ポリビ
ニルアルコール、その他の水溶性の着色インク、水溶性
のドライフィルム、あるいは油性のアクリル系、エポキ
シ系、アミド系などの樹脂を用いてもよい。As this masking material, water-soluble starch, polyvinyl alcohol, other water-soluble colored inks, water-soluble dry films, or oil-based resins such as acrylic, epoxy, and amide resins may be used.
これらのマスキング材は、スクリーン印刷法、ドライフ
ィルムによるフォI・リソグラフィー法等によってマス
クパターン(4)とする。These masking materials are formed into a mask pattern (4) by a screen printing method, a photolithography method using a dry film, or the like.
(d)次いて、マスクパターン(4)に沿って適宜なエ
ツチング剤を用いてエツチングするにの場合、金属膜を
形成している金属、導電性膜の種類によってエツチング
剤を適宜に選択する。(d) Next, when etching is performed using an appropriate etching agent along the mask pattern (4), the etching agent is appropriately selected depending on the metal forming the metal film and the type of conductive film.
メッキ金属膜と導電性膜は同時に、または別々にエツチ
ングしてもよいし、導電性膜はエツチングせずにそのま
ま残しておいてもよい。メッキ金属膜と導電性膜の種類
とエツチング剤との関係を例示したものが表−1である
。The plated metal film and the conductive film may be etched simultaneously or separately, or the conductive film may be left as is without being etched. Table 1 illustrates the relationship between the types of plated metal films and conductive films and etching agents.
このエツチングにより、所要の金属パターン(5)が得
られる。This etching results in the desired metal pattern (5).
金属パターンプリント板は、そのままプリント回路板と
して用いることもできるし、あるいはまた、第2図に示
したように、プラスチック板、積層板等の基板(6)に
、接着剤を用いて貼着し、次いで基板(1)を剥離して
用いることもできる。The metal pattern printed board can be used as it is as a printed circuit board, or alternatively, as shown in Figure 2, it can be attached to a substrate (6) such as a plastic board or a laminate board using an adhesive. Then, the substrate (1) can be peeled off and used.
さらには、第3図に示したように、別の基板(7)を金
属パターンの表面に貼着して装飾板、あるいは銘板など
に用いることもできる。接着剤表−1
を用いてもよい。Furthermore, as shown in FIG. 3, another substrate (7) can be attached to the surface of the metal pattern to be used as a decorative plate or a name plate. Adhesive Table-1 may also be used.
以上の方法に代えて、電解メッキまたは無電解メッキを
施す前にマスクパターンに沿ってエツチングを行い、導
電性膜のパターンを形成しておいてもよい。Instead of the above method, etching may be performed along a mask pattern to form a conductive film pattern before electroplating or electroless plating.
以上の方法について、次に実施例を説明する。Examples of the above method will now be described.
もちろん、この発明は以下の実施例によって限定される
ものではない。Of course, the invention is not limited to the following examples.
実施例
P E Tフィルムの表面に、プラズマイオンビームデ
ポジションによりITO薄膜を0.6μm形成した。ロ
ール・トつ・ロールによる圧力勾配型イオンブレーティ
ング装置を用い18m/分の速度で移動さぜながらIT
O薄膜を形成した。次いで無電解メッキによって銅の薄
膜を厚さ20μm形成した。Example An ITO thin film of 0.6 μm was formed on the surface of the PET film by plasma ion beam deposition. IT is carried out while moving at a speed of 18 m/min using a pressure gradient type ion brating device that uses rolls, rolls, and rolls.
An O thin film was formed. Next, a thin copper film having a thickness of 20 μm was formed by electroless plating.
水溶性インクをマスクとしてパターン形成し、VIl酸
銅、塩化鉄溶液によって銅のエツチングを行い、続いて
、カセイソーダを用いてITO下地膜のエツチングを行
った。A pattern was formed using a water-soluble ink as a mask, and copper was etched using a copper VII acid and iron chloride solution. Subsequently, the ITO base film was etched using caustic soda.
I T″0/銅の多層パターンを有するP E ’l”
ベースフィルムの積層体を積な。I T″0/P E 'l'' with copper multilayer pattern
Lay out the base film laminate.
これにスルホール形成等した後にプリント回路として用
い、電気部品を実装しな。After forming through holes on this, use it as a printed circuit and mount electrical components.
(発明の効果)
この発明により、生産性良く、高品質の金属パターンを
形成することが可能となる。(Effects of the Invention) This invention makes it possible to form high-quality metal patterns with good productivity.
プリント回路としてばかりでなく、装飾用パターンとし
てもこの発明による金属パターンプリント板は有用なも
のである。The metal pattern printed board according to the present invention is useful not only as a printed circuit but also as a decorative pattern.
第1図(a)(b)(c)(d)は、この発明の方法を
示した工程図である。第2図および第3図は各々この発
明の金属パターンプリント板の使用例を示した断面図で
ある。
1・・・基板、2・・・導電性膜、3・・・メッキ金属
膜、4・・・マスクパターン、5・・・金属パターン、
6.7・・・基板。
代理人弁理士 西 澤 利 夫= 12−
第 1 図
第 2 図
第 3 図FIGS. 1(a), (b), (c), and (d) are process diagrams showing the method of the present invention. FIGS. 2 and 3 are sectional views each showing an example of use of the metal pattern printed board of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Conductive film, 3... Plated metal film, 4... Mask pattern, 5... Metal pattern,
6.7...Substrate. Representative patent attorney Toshio Nishizawa = 12- Figure 1 Figure 2 Figure 3
Claims (2)
ッキを行った後にマスクパターンを形成してエッチング
を行うことを特徴とする金属パターン形成方法。(1) A method for forming a metal pattern, which comprises providing a conductive film on the surface of a substrate, performing electrolytic or electroless plating, and then forming a mask pattern and performing etching.
成した後にエッチングを行い、マスク除去して得た導電
性膜パターンに電解または無電解メッキを行うことを特
徴とする金属パターン形成方法。(2) A method for forming a metal pattern, which comprises providing a conductive film on the surface of a substrate, forming a mask pattern, etching it, removing the mask, and performing electrolytic or electroless plating on the conductive film pattern obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11150487A JPS63275194A (en) | 1987-05-07 | 1987-05-07 | Formation of metallic pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11150487A JPS63275194A (en) | 1987-05-07 | 1987-05-07 | Formation of metallic pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63275194A true JPS63275194A (en) | 1988-11-11 |
Family
ID=14562978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11150487A Pending JPS63275194A (en) | 1987-05-07 | 1987-05-07 | Formation of metallic pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63275194A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101543A (en) * | 2003-08-15 | 2005-04-14 | Semiconductor Energy Lab Co Ltd | Resist composition and fabricating method of semiconductor device using it |
-
1987
- 1987-05-07 JP JP11150487A patent/JPS63275194A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101543A (en) * | 2003-08-15 | 2005-04-14 | Semiconductor Energy Lab Co Ltd | Resist composition and fabricating method of semiconductor device using it |
JP4531475B2 (en) * | 2003-08-15 | 2010-08-25 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
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