JP2005101543A - Resist composition and fabricating method of semiconductor device using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resist composition which functions as a protective film which is formed using a lithographic means and is used at etching, a doping or the like, and provide a fabricating process of a semiconductor device which has a high safety, employs an easy-to-handle substance as a resist stripper, and is considered for an environment. <P>SOLUTION: The resist composition includes a water-soluble homopolymer, water or a solvent which is compatible with water and in which the water-soluble homopolymer is dissolved. The fabricating method of the semiconductor device includes a process to remove with water the protection film formed by discharging the resist composition using the lithographic means, after use. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a resist composition, and more particularly to a resist composition suitable for forming a film with an ink jet apparatus.

  2. Description of the Related Art Devices (ink jet devices) that use droplet discharge means for discharging droplets such as ink from thin nozzles are widely used as printing devices and recording devices.

  Moreover, in the manufacturing process of a printed wiring board, an inkjet apparatus is used as a means for forming a protective resist (see, for example, Patent Document 1). Furthermore, in recent years, an ink jet apparatus has been used as a means for forming a light emitting layer of an electroluminescence element.

  As described above, the ink jet device is used not only as a printing device or a recording device but also as a device for manufacturing a semiconductor device or a display device, and is expected to be used more and more in the future.

  With the expansion of device applications, it is also necessary to develop materials with performance suitable for each application.

  By the way, the resist that has been mainly formed by the coating method so far consists of various components and compositions so as to have performance depending on the application, such as for color filters, lead frames or shadow masks. Have been developed (see, for example, Patent Document 2 and Patent Document 3).

  Also in the resist which forms a film using an inkjet apparatus, it is necessary to develop not only the resist used for the manufacturing process of a printed wiring board as described above but also a resist having performance according to various other uses.

Of course, it is important to develop materials with good performance. However, it is also important to develop materials with high safety that do not use harmful substances as much as possible and to consider the environment. This is an important issue.
JP-A-8-288623 Japanese Patent Laid-Open No. 10-39127 JP-A-7-134398

  An object of the present invention is to provide a resist composition that can be formed using a drawing means and functions as a protective film used at the time of etching or addition of impurities. It is another object of the present invention to provide a manufacturing process of a semiconductor device in which a highly safe and easy-to-handle substance can be used as a stripping solution and the environment is considered.

  The resist composition of the present invention is characterized by comprising a water-soluble homopolymer and water or a solvent that is compatible with water and in which the water-soluble homopolymer is soluble.

  As the water-soluble homopolymer, polyvinyl alcohol is preferable. However, the present invention is not limited to this, and other water-soluble homopolymers may be used.

  Examples of the solvent include N, N-dimethylformamide (abbreviation: DMF), dimethyl sulfoxide (abbreviation: DMSO), glycerol, hexamethylphosphotriamide (abbreviation: HMPT), hexamethylphosphoramide (abbreviation: HMPA), Examples include piperazine and triethylenediamine. In addition, a mixed solvent composed of two or more substances selected from water, DMF, DMSO, glycerol, HMPT, HMPA, piperazine, and triethylenediamine can also be used as the solvent.

  Polyvinyl alcohol is soluble in a solvent comprising one or more substances selected from water and the above solvents.

  The resist composition of the present invention is characterized by containing polyvinyl alcohol and water.

  Polyvinyl alcohol is a substance suitable as a protective film during dry etching in the semiconductor device manufacturing process. Further, water is preferable for use as a solvent because it is easily available, has no toxicity, and has high chemical stability.

  The above-described resist composition of the present invention is suitable as a material for forming a film by a drawing means capable of forming a pattern without using a photolithography process. Here, as the drawing means, there is an apparatus that can form a pattern by controlling the timing and position at which the liquid is supplied, for example, an apparatus that includes a droplet discharge means such as an ink jet apparatus and a position control means. In addition, a dispenser type liquid discharge device or the like can be used.

  The resist composition of the present invention includes polyvinyl alcohol and water, and has a viscosity of 5 to 20 mPa · s.

  In the case where droplets are ejected using a device equipped with droplet ejection means such as an ink jet device, the viscosity of the raw material liquid is preferably 5 to 20 mPa · s. This is because if the viscosity is high, the nozzle is likely to be clogged, and if the viscosity is low, the thickness of the formed film becomes thin and the etching resistance becomes low. The polyvinyl alcohol preferably has an average degree of polymerization of 50 to 1000 in consideration of solubility in water. In general, those having a low degree of polymerization have higher solubility.

  Examples of the resist composition containing polyvinyl alcohol and water and having a viscosity of 5 to 20 mPa · s include a resist composition containing 5 to 10% by weight of polyvinyl alcohol having an average polymerization degree of 500 and 90 to 95% by weight of water.

  The method for manufacturing a semiconductor device of the present invention is characterized by having a step of removing the protective film formed by discharging the resist composition of the present invention using a drawing means with water after use.

  Here, “after use” means, for example, after being used as a mask in an etching process or after being used as a mask in an impurity addition process.

  Hereinafter, a more specific structure will be described with respect to a method for manufacturing a semiconductor device of the present invention.

  In the method for manufacturing a semiconductor device of the present invention, a protective film is formed on an object to be processed by discharging the resist composition of the present invention using a drawing unit, and a non-processed substrate on which the protective film is formed is subjected to heat treatment. And after etching the said to-be-processed object using the said protective film as a mask, it has the process of removing the said protective film with water.

  In the method for manufacturing a semiconductor device of the present invention, a protective film is formed on an object to be processed by discharging the resist composition of the present invention using a drawing unit, and a non-processed substrate on which the protective film is formed is subjected to heat treatment. Then, after adding an impurity to the object to be processed using the protective film as a mask, there is a step of removing the protective film with water.

  In the above method for manufacturing a semiconductor device, the heat treatment may be performed under reduced pressure. Thereby, the vaporization temperature of the solvent can be lowered, and the temperature necessary for removing the solvent from the protective film can be lowered.

  Since the protective film is water-soluble, the protective film that has become unnecessary after etching or doping can be removed using only water. Therefore, the protective film can be removed without using a toxic substance such as a stripping solution that has been used in the past, and the safety is enhanced, and the raw material liquid and waste liquid can be easily handled. .

  According to the present invention, a resist composition suitable for forming a film using a drawing means can be obtained. In addition, by using the resist composition of the present invention, it is possible to realize a manufacturing process of a semiconductor device that is highly safe, easy to handle in both raw material liquid and waste liquid, and environmentally friendly.

  Hereinafter, one embodiment of the present invention will be described. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of the embodiment.

(Embodiment 1)
The resist composition of the present invention contains a water-soluble homopolymer and water or a solvent that is compatible with water and in which the water-soluble homopolymer is soluble.

Although there is no limitation in particular about a water-soluble homopolymer, polyvinyl alcohol is preferable.
This is because polyvinyl alcohol is a material suitable as a protective film during dry etching in the semiconductor device manufacturing process.

  Water is particularly preferred for use as a solvent because it is readily available, is not toxic and has high chemical stability.

  There is no particular limitation on the solvent that is compatible with water and in which the water-soluble homopolymer is soluble. N, N-dimethylformamide (abbreviation: DMF), dimethyl sulfoxide (abbreviation: DMSO), glycerol, hexamethylphosphotriamide (Abbreviation: HMPT), hexamethylphosphoramide (abbreviation: HMPA), piperazine, triethylenediamine, and the like. In addition, a mixed solvent composed of two or more substances selected from water, DMF, DMSO, glycerol, HMPT, HMPA, piperazine, and triethylenediamine can also be used as the solvent.

  Moreover, as a preferred embodiment of the present invention, a resist composition containing polyvinyl alcohol and water and having a viscosity of 5 to 20 mPa · s can be mentioned. This makes it easy to form a mask made of the resist composition of the present invention using an apparatus equipped with droplet discharge means such as an ink jet method.

  In addition, as an aspect of the resist composition containing polyvinyl alcohol and water and having a viscosity of 5 to 20 mPa · s, the resist composition containing 5 to 10% by weight of polyvinyl alcohol having an average polymerization degree of 500 and 90 to 95% by weight of water. Can be given.

  The resist composition of the present invention is suitable as a material for forming a protective film using drawing means such as an ink jet method.

  The resist composition of the present invention described above does not contain a photosensitive compound and does not exhibit a polymerization reaction due to light. That is, it is non-photosensitive. It is also soluble in water. Therefore, the protective film formed using the resist composition of the present invention can be removed with water.

(Embodiment 2)
The resist composition of the present invention can be used in various processing steps in a semiconductor device manufacturing process. For example, a protective film formed by discharging the resist composition of the present invention using a drawing means can be used as a mask in an etching process or a mask in an impurity addition process.

  As an embodiment of a manufacturing process of a semiconductor device using the resist composition of the present invention, a manufacturing process of a thin film transistor (TFT) is described with reference to FIGS. 1, (A) to (D) and FIGS. 2 (A) to (D). I will explain.

  After forming the semiconductor film 11 on the substrate 10, droplets made of the resist composition of the present invention are ejected using a drawing means to form the protective film 12 on the semiconductor film 11. The protective film 12 is drawn in a desired shape using drawing means. Therefore, processing steps such as exposure and development are unnecessary, and materials related to these steps are also unnecessary.

  Here, any substrate 10 may be used as long as it functions as a support substrate for supporting the semiconductor device, such as a glass substrate, a quartz substrate, and a plastic substrate. Further, a silicon film or the like can be used as the semiconductor film 11. Note that the silicon film may be either crystalline or amorphous, or may be an amorphous film containing a microcrystalline component. The resist composition contains a water-soluble homopolymer and water or a solvent that is compatible with water and in which the water-soluble homopolymer is soluble. As the water-soluble homopolymer, polyvinyl alcohol or the like is preferable, but other water-soluble homopolymers may be used. The solvent that is compatible with water and in which the water-soluble homopolymer is soluble includes water and one or more substances selected from DMF, DMSO, glycerol, HMPT, HMPA, piperazine, triethylenediamine, and the like. Can be used.

  Next, a heat treatment is performed to remove the solvent contained in the protective film 12. Here, the heating temperature is preferably less than 150 ° C. so that the protective film 12 can be easily removed with water in a later step. More preferably, it is 120 degrees C or less. Note that the heat treatment may be performed under reduced pressure. By performing the heat treatment under reduced pressure, the vaporization temperature of the solvent can be lowered, and the temperature necessary for removing the solvent from the protective film can be lowered.

  Next, using the protective film 12 as a mask, the semiconductor film 11 is etched to form a semiconductor film 13 processed into a desired shape.

  Next, the protective film 12 remaining on the semiconductor film 13 is removed by dissolving with water. Thus, in the method for manufacturing a semiconductor device of the present invention, water is used as a stripping solution. Therefore, unlike the stripping solution containing a lot of toxic substances conventionally used for removing the resist film, the protective film 12 can be removed with water, so that it is very low pollution and the cost of raw materials can be reduced. it can. This is because the resist composition of the present invention uses a water-soluble homopolymer.

  Next, a gate insulating film 14 is formed on the semiconductor film 13, and a conductive film 15 is further formed thereon. A protective film 16 formed using the resist composition of the present invention is formed on the conductive film 15 in the same manner as described above.

  Next, after etching the conductive film 15 using the protective film 16 as a mask, an impurity is added to the semiconductor film 13 to form high concentration impurity regions 17a and 17b. One of the high concentration impurity regions functions as a TFT source, and the other functions as a TFT drain. In addition, a region sandwiched between the high concentration impurity regions 17 a and 17 b functions as a channel formation region, and the processed conductive film 15 functions as a gate electrode 18.

  Next, the protective film 16 is removed using water in the same manner as described above. Further, contact holes that penetrate through the interlayer insulating film 19 and the interlayer insulating film 19 and reach the high-concentration impurity regions 17a and 17b are formed. Further, wirings 20a and 20b for transmitting electrical signals to the high concentration impurity regions 17a and 17b are formed.

  As described above, the method for manufacturing a semiconductor device of the present invention is applied to manufacture a TFT. Note that a staggered TFT is manufactured in this embodiment mode, but an inverted staggered TFT may be formed in addition to this. Further, the gate electrode structure is not limited to the single gate type, and a multi-gate type may be used. Note that the type of impurity to be added may be changed as appropriate depending on which TFT is manufactured, such as an n-channel TFT or a p-channel TFT.

  As described above, in the manufacturing process of a TFT to which the method for manufacturing a semiconductor device of the present invention is applied, the protective film used as a mask in the etching process or the impurity addition process can be removed only with water. That is, the method for manufacturing a semiconductor device of the present invention uses a highly safe and easy-to-handle substance as a stripping solution, and is environmentally friendly. Note that such a method for manufacturing a semiconductor device is made possible by using the resist composition of the present invention.

(Embodiment 3)

  As one embodiment of a manufacturing process of a semiconductor device using the resist composition of the present invention, a manufacturing process of a bottom-gate thin film transistor (TFT) is described with reference to FIGS. ).

  After the conductive film 31 is formed on the substrate 30, droplets made of the resist composition of the present invention are ejected using a drawing means, and the protective film 32 is formed on the conductive film 31 as in the second embodiment. Form.

  Next, the conductive film 31 is etched using the protective film 32 as a mask to form the gate electrode 33. After forming the gate electrode 33, the protective film 32 is removed by treating with water.

  Next, a gate insulating film 34 is formed over the gate electrode 33, and a semiconductor film 35 and a semiconductor film 36 containing n-type impurities are sequentially formed over the gate insulating film 34. Then, a conductive film 37 is formed on the semiconductor film 36.

  Next, droplets made of the resist composition of the present invention are ejected onto the conductive film 37 using a drawing means, and a protective film 38 is formed in the same manner as in the second embodiment.

  Next, the conductive film 37 is etched using the protective film 38 as a mask, and then the semiconductor film 36 is etched. Thereby, an electrode 39 containing an n-type impurity and functioning as a source electrode or a drain electrode of the TFT is formed. A wiring 40 is formed on the electrode 39. After forming the electrode 39 and the wiring 40, the protective film 38 is removed by treating with water. Note that part of the semiconductor film 35 may be etched together with the etching of the semiconductor film 36.

  Through the above process, a TFT called a channel etch type can be manufactured among bottom gate TFTs.

  A preparation example of the resist composition of the present invention will be described.

  Five types of compositions containing polyvinyl alcohol and water with different composition ratios were prepared and examined for viscosity. In this example, polyvinyl alcohol having an average degree of polymerization of 500 is used. The evaluation results are shown in Table 1. Example 1-1 is a composition comprising 1.0% by weight of polyvinyl alcohol and 99.0% by weight of water. Example 1-2 is a composition comprising 2.5% by weight of polyvinyl alcohol and 97.5% by weight of water. Example 1-3 is a composition comprising 5.0% by weight of polyvinyl alcohol and 95.0% by weight of water. Example 1-4 is a composition comprising 7.5% by weight of polyvinyl alcohol and 92.5% by weight of water. Example 1-5 is a composition comprising 10.0% by weight of polyvinyl alcohol and 90.0% by weight of water. The polyvinyl alcohol used in this example has an average polymerization degree of 500, a saponification degree of 86.5 to 89 mol%, and manufactured by Kishida Chemical.

  Furthermore, in this example, the etching resistance and peelability of films formed using the compositions shown in Examples 1-1 to 1-5 were also evaluated.

  The etching resistance was evaluated as follows. First, after forming a film on a silicon film using the composition shown in Examples 1-1 to 1-5 and heating at 120 ° C., an atmosphere in which plasma is generated in an atmosphere containing carbon tetrafluoride and oxygen The silicon film was etched by exposure to about 155 seconds. After the etching, it was evaluated whether the silicon film was processed into a desired shape, and the case where the silicon film was processed into a desired shape was considered to have etching resistance.

  The peelability was evaluated as follows. After forming and heating on a silicon film using the composition shown in Examples 1-1 to 1-5, it was evaluated whether or not it can be peeled off with water. In addition, the heating temperature evaluated three conditions of 100 degreeC, 120 degreeC, 150 degreeC or more considering the vaporization temperature (under normal pressure) of the water contained in a composition. The heating time is 10 minutes.

  From the above results, the compositions shown in Examples 1-3, 1-4, and 1-5 have a viscosity of 5 to 20 mPa · s suitable as a composition for an apparatus provided with a droplet discharge unit such as an inkjet apparatus. It turns out that. Here, the viscosity was measured using a vibration viscometer (model number VM-1G-L, manufactured by CBC Materials Co., Ltd.) in an atmosphere kept at 23 ° C. Moreover, regarding the etching resistance, the compositions shown in Examples 1-3, 1-4, and 1-5 were good. Furthermore, the peelability differs depending on the heating temperature. It has been found that it is difficult to remove a film formed from the above composition as a raw material using water at 150 ° C. or higher. Therefore, the heating temperature after film formation is preferably less than 150 ° C., more preferably 120 ° C. or less. In addition, regarding peelability, the difference for every composition ratio was not seen especially.

  In this embodiment, a display device using a TFT array substrate manufactured by applying the method for manufacturing a semiconductor device of the present invention will be described with reference to FIGS.

  FIG. 3A is a cross-sectional view of a liquid crystal display device. A TFT array substrate 901 manufactured by applying the method for manufacturing a semiconductor device of the present invention, a counter substrate 902, and a liquid crystal sandwiched between these substrates. Layer 908. Note that an alignment film 903 a is formed on the TFT array substrate 901. In the counter substrate 902, a light shielding film 906, a counter electrode 905, and an alignment film 903b are formed on the substrate 907 to prevent light from being applied to the TFT. The alignment films 903a and 903b are each rubbed. Note that the TFT array substrate 901 and the counter substrate 902 are attached to each other with a sealant, and the inside is filled with a liquid crystal material. Although not shown in FIG. 3A, a color filter or the like may be provided as necessary to form a full-color liquid crystal display device.

  As for the injection of the liquid crystal material, a method of injecting the liquid crystal material after bonding the TFT array substrate and the counter substrate may be used, or the liquid crystal material is dropped on either the TFT array substrate or the counter substrate. Then, a method of bonding both substrates may be used.

  FIG. 3B is a top view of the apparatus shown in FIG. A connection wiring group 1002 is provided adjacent to the pixel portion 1001 and is connected to the external input / output terminal 1003 by the connection wiring group 1002. In the pixel portion 1001, a wiring group extending from the connection wiring group 1002 intersects in a matrix to form a pixel. The sealant 1004 is formed outside the pixel portion 1001 on the TFT array substrate 1006 and inside the external input / output terminal 1003. In the liquid crystal display device, a flexible printed circuit (FPC) 1005 is connected to an external input / output terminal 1003 and is connected to each signal line by a connection wiring group 1002. The external input / output terminal 1003 is formed of the same conductive film as the connection wiring group. The flexible printed wiring board 1005 has a copper wiring formed on an organic resin film such as polyimide, and is connected to the external input / output terminal 1003 with an anisotropic conductive adhesive. Reference numeral 1007 denotes a counter substrate.

  In this embodiment, the method for manufacturing a liquid crystal display device has been described. However, the present invention is not limited to this, and an electroluminescence display device or the like is manufactured using a TFT array substrate manufactured by applying the method for manufacturing a semiconductor device of the present invention. May be. 3A shows an inverted stagger type TFT 909, a liquid crystal display device including a top gate type TFT 919 as shown in FIG. 7 may be manufactured. Further, not only the channel protection type TFT as shown in FIG. 3A but also the channel etching as described with reference to FIGS. 5A to 5D and FIGS. 6A to 6C. A type TFT may also be used. In FIG. 7, the TFT array substrate 911 manufactured by applying the method for manufacturing a semiconductor device of the present invention, a counter substrate 912, and a liquid crystal layer 918 sandwiched between these substrates are formed. Note that an alignment film 913 a is formed on the TFT array substrate 911. In the counter substrate 912, a light shielding film 916, a counter electrode 915, and an alignment film 913b are formed on the substrate 917 to prevent the TFT from being irradiated with light. The alignment films 913a and 913b are each rubbed. Note that the TFT array substrate 911 and the counter substrate 912 are attached to each other with a sealant, and the inside is filled with a liquid crystal material. Although not shown in FIG. 7A, a color filter or the like may be provided as necessary to form a full-color liquid crystal display device. Reference numeral 914 denotes a spacer.

  The above-mentioned liquid crystal display device and electroluminescence display device are manufactured by applying the method for manufacturing a semiconductor device of the present invention, particularly in the process of manufacturing a TFT array substrate, and are manufactured by using the resist composition of the present invention. It was made.

  In this embodiment, electronic devices to which the present invention is applied will be described with reference to FIGS. By applying the present invention, an electronic device as shown in FIG. 4 can be manufactured through a highly safe process.

  FIG. 4A illustrates a display device, which includes a housing 5501, a support base 5502, and a display portion 5503. It can be completed by incorporating the liquid crystal display device shown in Embodiment 2.

  FIG. 4B illustrates a video camera, which includes a main body 5511, a display portion 5512, an audio input portion 5513, operation switches 5514, a battery 5515, an image receiving portion 5516, and the like. A display device can be completed by incorporating the liquid crystal display device shown in Embodiment 2 into a video camera.

  FIG. 4C is a laptop personal computer manufactured by applying the present invention, which includes a main body 5521, a housing 5522, a display portion 5523, a keyboard 5524, and the like. A display device can be completed by incorporating the liquid crystal display device shown in Embodiment 2 into a personal computer.

  FIG. 4D illustrates a personal digital assistant (PDA) manufactured by applying the present invention. A main body 5531 is provided with a display portion 5533, an external interface 5535, operation buttons 5534, and the like. There is a stylus 5532 as an accessory for operation. A display device can be completed by incorporating the liquid crystal display device shown in Embodiment 2 into a personal digital assistant (PDA).

  FIG. 4E illustrates a digital video camera which includes a main body 5551, a display portion (A) 5552, an eyepiece portion 5553, an operation switch 5554, a display portion (B) 5555, a battery 5556, and the like. A display device can be completed by incorporating the liquid crystal display device shown in Embodiment 2 into a digital video camera.

  FIG. 4F illustrates a cellular phone manufactured by applying the present invention. A main body 5561 is provided with a display portion 5564, an audio output portion 5562, an audio input portion 5563, operation switches 5565, an antenna 5566, and the like. A display device can be completed by incorporating the liquid crystal display device shown in Embodiment 2 into a mobile phone.

8A and 8B illustrate one embodiment of a method for manufacturing a semiconductor device of the present invention. 8A and 8B illustrate one embodiment of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a display device manufactured by applying the present invention. 6A and 6B illustrate an electronic device manufactured by applying the present invention. 8A and 8B illustrate one embodiment of a method for manufacturing a semiconductor device of the present invention. 8A and 8B illustrate one embodiment of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate a display device manufactured by applying the present invention.

Explanation of symbols

10 substrate 11 semiconductor film 12 protective film 13 semiconductor film 14 gate insulating film 15 conductive film 16 protective film 17a high concentration impurity region 17b high concentration impurity region 18 gate electrode 19 interlayer insulating film 20a wiring 20b wiring 30 substrate 31 conductive film 32 protective film 33 gate electrode 34 gate insulating film 35 semiconductor film 36 semiconductor film 37 conductive film 38 protective film 39 electrode 40 wiring 901 TFT array substrate 902 counter substrate 903a alignment film 903b alignment film 906 light shielding film 905 counter electrode 906a alignment film 906b alignment film 907 substrate 908 Liquid crystal layer 909 TFT
911 TFT array substrate 912 Counter substrate 913a Alignment film 913b Alignment film 916 Light shielding film 915 Counter electrode 916a Alignment film 916b Alignment film 917 Substrate 918 Liquid crystal layer 919 TFT
1001 Pixel portion 1002 Connection wiring group 1003 External input / output terminal 1004 Sealing material 1005 Flexible printed wiring board 1006 TFT array substrate 1007 Counter substrate 5501 Housing 5502 Support base 5503 Display portion 5511 Main body 5512 Display portion 5513 Audio input 5514 Operation switch 5515 Battery 5516 Image receiving unit 5521 Main unit 5522 Case 5523 Display unit 5524 Keyboard 5531 Main unit 5533 Display unit 5535 External interface 5534 Operation button 5532 Stylus 5551 Main unit 5552 Display unit (A)
5553 Eyepiece 5554 Operation Switch 5555 Display (B)
5556 Battery 5561 Main unit 5564 Display unit 5562 Audio output unit 5565 Operation switch 5566 Antenna

Claims (14)

  A resist composition comprising: a water-soluble homopolymer; and water or a solvent that is compatible with water and in which the water-soluble homopolymer is soluble.   Polyvinyl alcohol and a solvent comprising one or more substances selected from water and N, N-dimethylformamide, dimethyl sulfoxide, glycerol, hexamethylphosphotriamide, hexamethylphosphoramide, piperazine, and triethylenediamine A resist composition comprising:   A resist composition comprising polyvinyl alcohol and water and having a viscosity of 5 to 20 mPa · s.   The resist composition according to claim 3, wherein the polyvinyl alcohol has an average degree of polymerization of 50 to 1,000.   A resist composition comprising 5 to 10% by weight of polyvinyl alcohol having an average polymerization degree of 500 and 90 to 95% by weight of water.   A semiconductor device comprising a step of removing, after use, a protective film formed by discharging the resist composition according to any one of claims 1 to 4 using a drawing unit, after use. Manufacturing method.   A protective film is formed on an object by discharging the resist composition according to any one of claims 1 to 4 using a drawing unit, and a non-processed substrate on which the protective film is formed is formed. A method for manufacturing a semiconductor device, comprising: a step of performing heat treatment, etching the object to be processed using the protective film as a mask, and then removing the protective film with water.   The said to-be-processed object in which the protective film was formed on the to-be-processed object by discharging the resist composition as described in any one of Claims 1 thru | or 4 using a drawing means, and the said to-be-processed film was formed. And a step of removing the protective film with water after adding impurities to the object to be processed using the protective film as a mask.   9. The method for manufacturing a semiconductor device according to claim 7, wherein the heat treatment is performed under reduced pressure.   A resist composition comprising a water-soluble homopolymer and water or a solvent that is compatible with water and in which the water-soluble homopolymer is soluble, and is non-photosensitive.   Polyvinyl alcohol and a solvent comprising one or more substances selected from water and N, N-dimethylformamide, dimethyl sulfoxide, glycerol, hexamethylphosphotriamide, hexamethylphosphoramide, piperazine, and triethylenediamine And a non-photosensitive resist composition.   A resist composition comprising a water-soluble homopolymer and water or a solvent that is compatible with water and in which the water-soluble homopolymer is soluble, is non-photosensitive, and is removed by water. .   Polyvinyl alcohol and a solvent comprising one or more substances selected from water and N, N-dimethylformamide, dimethyl sulfoxide, glycerol, hexamethylphosphotriamide, hexamethylphosphoramide, piperazine, and triethylenediamine A resist composition which is non-photosensitive and is removed by water. A resist composition for a drawing means comprising a water-soluble homopolymer and water or a solvent which is compatible with water and the water-soluble homopolymer.

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