JPS63274691A - Method and device for growing single crystal - Google Patents

Abstract

PURPOSE:To prevent the liberation of volatile components from the surface of a crystal by forming an atmosphere at the upper space of a main crucible with the high-dissociation pressure compd. in an auxiliary crucible at the time of producing a high-dissociation pressure compd. single crystal by the Czochralski method. CONSTITUTION:A pressure vessel 13 and a vessel 5 are opened, a seed crystal 10 is fixed to an upper shaft 8, a raw solid compd. material is charged in the main crucible 1 and the auxiliary crucible 2, and B2O3 is charged in sealant storages 21 and 22. The vessel 13 is closed, the inside atmosphere is replaced by an inert gas, then the vessel 5 is closed, and heaters 6 and 27 are energized to liquefy the B2O3. In this case, since the crucible 2 is firstly heated to a high temp., the melt 4 is violently dissociated, the volatile component is liberated, hence the inner space S is filled with the volatile component, and the inert gas and the gaseous volatile component coexist in the space S. Seeding is carried out under such conditions, a single crystal is pulled up, and the dissociation of the gaseous volatile component from the crystal surface can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION (7) Technical Field The present invention relates to improvements in the production of high dissociation pressure compound single crystals by the Czochralski method (CZ method).

High dissociation pressure compounds include InP, GaAs,
■-v group compounds such as..., ZnS1CdTe...
It means a group I-■ compound such as...

These compounds contain high dissociation pressure components such as P and As.

Conventionally, crystals were produced using the liquid capsule method (LEC method), but there was a problem in that high dissociation pressure components volatilized from the crystal surface.

A high pressure inert gas exists in the space where the crystal is pulled up. However, the partial pressure of the high dissociation pressure component gas is low. The high dissociation pressure component is volatilized from the melt, but since the space is wide, the partial pressure of the high dissociation pressure component gas is low. Furthermore, since the minimum temperature of the container is low, the gas once volatilized adheres to the low temperature part of the container.

In order to avoid this difficulty, the space into which the crystal is pulled can be restricted and the space filled with a high dissociation pressure component gas.

Many improvement methods have been proposed, mainly for raising QaAs.

A critical issue is how to supply the high dissociation pressure component.

(g) Prior art Among these, the most promising method is the method of using double containers. As vapor is present in the inner container. Thus, As
The pressure is balanced to prevent As from leaving the crystal.

There is something called the double melt seal method.

For example, JP-A-54-121585 (S54.9.2
5), Japanese Patent Publication No. 58-99195 (558,6,1
8) proposes such a method.

These are placed in a vertically long quartz crucible.
0. and insert the upper shaft into this. Above the quartz crucible is a wide space into which the crystals are pulled up.

The upper shaft and the insertion opening at the upper end of the quartz crucible are sealed by a saucer containing B2O3. The melt in the crucible is also covered with B,03. Therefore, it is called a double melt seal. There is a heater (outside the quartz crucible), and a pressure vessel surrounds the whole.

As exists within the space of the inner container. The As pressure prevents As from leaving the crystal surface. As supplied to the internal space is dissociated from the GaAs raw material melt.

Since this method uses a quartz tube as a container, it is thought to have two advantages.

(1,) Since quartz is a material with excellent shapeability, it is easy to make containers of such irregular shapes.

(2) Since quartz is transparent, it is possible to observe the inside.

However, on the other hand, Si in the quartz enters the GaAs melt and contaminates it. This is a serious problem because Si becomes an n-type impurity.

In particular, non-doped GaAs single crystals cannot be made using this method.

Further, as methods for manufacturing GaAs single crystals, Japanese Patent Application Laid-Open Nos. 60-11298 (published on January 21, 1988) and JP-A-60-11299 (published on January 21, 1982) have been proposed.

This also uses double containers. This is a double melt seal method. k
However, the entire inner container is not formed by the quartz tube. A quartz lid with an open bottom is inserted into the crucible to form a sealed space.

Furthermore, the lower end of the quartz lid remains within 8203. Make sure the bottom end does not touch the GaAs melt.

This is because the GaAs melt is not contaminated by Si in the quartz. The crucible is a PBN crucible. An inner container is formed by a crucible and a quartz lid.

This method is superior to the above-mentioned methods in that Si contamination can be avoided.

Furthermore, this method allows not only As but also N to be present in the inner container.
It also contains an inert gas such as 2. The outer container is an inert gas only.

The same applies to Japanese Patent Application Laid-Open No. 60-255692 (published on December 17, 1987). Fill the container with As gas,
The s pressure is increased to prevent As from leaving the crystal. This As is removed from the raw material GaAs melt.

However, in these methods, As
Therefore, there is a problem that the raw material melt GaAs deviates from the stoichiometry.

JP-A No. 60-41639 (published on September 18, 1983) provides a separate container in which the As solid is placed inside the furnace. A
s is heated to generate As vapor and form an As atmosphere.

(Sha) Problems with the Prior Art The method of dissociating the raw material melt to obtain a high dissociation pressure component gas has a problem in that the composition of the raw material melt deviates from the stoichiometry.

In the case of placing a high dissociation pressure component solid in a furnace and heating it with a heater to control the pressure of the high dissociation pressure component gas, it is possible to synchronize the timing of the raw material solid melting and becoming the raw material melt. difficult.

In addition, controllability is poor because pressure fluctuations due to temperature fluctuations of the high dissociation pressure component solid are significant.

Bρ3 must be softened first. For this reason, the temperature inside the furnace is set to about 500°C to 600°C. Particularly in the case of P, almost all the P solids have evaporated by this temperature.

After this, pressure control cannot be performed.

B) Method of the present invention The method of the present invention includes forming a sub-crucible around the side of the main crucible;
A melt serving as a raw material for a compound semiconductor having the same composition is placed in each crucible, and volatile components are vaporized from the melt in the sub-crucible to form an atmosphere of volatile components.

The present invention will be explained in detail with reference to FIG.

A main crucible 1 is supported by a lower shaft 9.

A sub-crucible 2 is formed concentrically around the side circumference of the main crucible 1.

Both the main crucible 1 and the sub-crucible 2 are filled with materials that can be used as raw materials for compound semiconductors. However, crystal pulling is performed only from the main crucible 1. The compound melt in sub-crucible 2 is not used for crystal pulling. This is the upper space S
used only to create an atmosphere of volatile component gases. Therefore, the melt in the sub-crucible 2 will be referred to as the atmosphere-forming melt 4.

Volatile components are sometimes referred to as high dissociation pressure components. It's the same thing.

Although not shown in FIG. 1, there is a heater further outside Ic of the sub-crucible 2. The sub-crucible 2 is first heated by the inward radiant heat of the heater. Heat is transferred from the sub-crucible 2 to the main crucible 1 mainly by thermal conduction.

Such a relationship always exists between the main crucible 1 and the secondary crucible 2. In order for this to happen, both crucibles should be concentrically arranged and the heights of the liquids should be approximately the same. but,
It is not necessary that the heights of the liquids be exactly the same. It can be quite different.

Also, unlike the double crucible method, there is no flow of melt between the two crucibles.

The main crucible 1 and the sub-crucible 2 have independent spaces.

The melt is not exchanged. For this reason, it is common for the liquid level heights to differ.

Sub-crucible 2 is closer to the heater and has a higher temperature. Then, volatile components are dissociated from the melt.

This volatile component gas escapes upward and forms an atmosphere Q of volatile component gas in the space above the main crucible 1. Since this atmosphere is predominant, volatilization of volatile component gases from the melt in the main crucible 1 is suppressed.

Furthermore, when the single crystal is pulled from the raw material melt 3 in the main crucible 1, the crystal surface is surrounded by the volatile component gas atmosphere Q, so that dissociation of the volatile component gas from the crystal surface is suppressed.

A feature of the present invention is that the melt in the sub-crucible 2 is used to form a volatile component gas atmosphere.

To achieve this, the sub-crucible 2 is provided around the outer periphery of the main crucible 1, so that the temperature of the sub-crucible 2 is always higher than that of the main crucible.

The melt here refers to InP, 1GaAs, and GaP.
, InAs.

These include CdTe, ZnS, etc.

Further, both or one of the inner and outer melts 3.4 may be covered with the liquid sealant B2O3.

Covering the raw material melt 3 in the main crucible 1 with a liquid sealant and applying high pressure with an inert gas is the same as in the normal LEC method.

Regarding sub-crucible 2, the situation is different. Covering the atmosphere forming melt 4 with a liquid sealant delays the dissociation of volatile components. This prevents the formation of an atmosphere of volatile component gases. However, on the other hand, it can prevent the compound from evaporating as it is.

If the compound evaporates, it will stick to the inside of the container.

If it is a quartz container, internal observation will be hindered.

Furthermore, when the compound is deposited on a viewing window, internal observation becomes impossible due to the vapor-deposited layer of the compound.

Liquid sealants can almost completely suppress evaporation of the compound. This has the effect of allowing only the volatilization of volatile component gases. Even if volatile components stick to the viewing window, the view is not obstructed.

Because of this, it is also meaningful to cover the atmosphere-forming melt 4 in the sub-crucible 2 with a liquid sealant.

The principle of the method of the present invention is shown in FIG.

However, in order to form an atmosphere, a sealed space that includes at least a portion of the main crucible 1 and the sub-crucible 2 must exist.

In this space, there is an inert gas pressure and a volatile component gas pressure. This space is called internal space S. The pulled crystal is in the internal space S. Since a high partial pressure of volatile component gas exists in the internal space S, escape of volatile components from the crystal surface can be effectively prevented.

Regarding the formation of the internal space, several cases are possible.

Four examples will be explained below.

In either case, the temperature of the sealed internal space must be sufficiently high. The minimum temperature of the internal space must be higher than the temperature at which the volatile component gas solidifies.

Otherwise, the volatile component gas would solidify and adhere to the wall surface of the lowest temperature region, and the partial pressure of the volatile component gas would not rise sufficiently.

(b) Inclusive type Fig. 2 shows a longitudinal cross-sectional view.

The main crucible 1 and the sub-crucible 2 are completely enclosed by the vessel 5.

At the center of the vessel 5, an upper shaft 8 is suspended from above. A lower shaft 9 is provided from below.

A seed crystal 10 is attached to the lower end of the upper shaft 8. A seed crystal 10 is immersed in the raw material melt 3 for seeding, and the upper shaft 8 is pulled up while rotating. Following the seed crystal 10, the single crystal 14 is pulled up.

A k-th heater 6 is provided outside the vessel 5 to heat the melt 3.4 in the main crucible 1 and the sub-crucible 2.

A viewing window γ is provided through the side wall of the vessel 5 in order to observe the state of crystal growth.

The viewing window 7 is made of a transparent quartz or sapphire bar. These bars are sometimes processed with concave lenses. Alternatively, only the tip of the bar may be processed into a concave lens.

In the case of quartz, it is preferable to coat the viewing window with a thin film of In or O to avoid contamination by Si.

A pressure vessel 13, which is an outer vessel, surrounds the vessel 5, heater 6, upper shaft 8, lower shaft 9, and the like.

High-pressure inert gas also exists in the external space W sandwiched between the pressure vessel 13 and the vessel 5. In the interior space S of the vessel 5, high-pressure inert gas and volatile gas components exist.

An upper sealant reservoir 2 is placed around the upper shaft through hole 18 of the vessel 5.
1 is formed. A liquid sealant 23 is housed in this. This is to seal the upper shaft 8 with liquid. The liquid sealant 23 can be heated by the heater 27.

The lower sealant reservoir 2 is also located around the lower shaft through hole 19 of the vessel.
2, and a liquid sealant 24 liquid-seals the lower shaft 9.

The process of crystal growth is as follows.

Open the pressure vessel 13 and vessel 5. Seed crystal 10 on upper axis 8
Install. Into the main crucible 1 and the sub-crucible 2, a solid compound raw material and, if necessary, impurities are placed.

When using the liquid capsule method, main crucible 1, sub-crucible 2
Then add the solid B2O3. B2O3 is also put into the upper and lower sealant reservoirs 21 and 22.

Close the pressure vessel 13.

After the pressure vessel 13 is once evacuated, an inert gas is introduced. Close the vessel and energize heater 6.27. First, the liquid sealant B2O3 softens and becomes liquid.

Since the sub-crucible 2 becomes hotter first, the melt 4 in the sub-crucible 2 actively dissociates, and the internal space S is filled with zero volatile component gas from which volatile components escape. Here, inert gas and volatile component gas coexist.

In this state, seeds are seeded and the single crystal is pulled. Internal space S
contains an inert gas and a volatile component gas, and can prevent the dissociation of volatile gas components from the crystal surface. This is because the dissociation pressure and the partial pressure of the volatile component gas in the space S are in equilibrium.

Furthermore, if a liquid sealant is present, it is suppressed by an inert gas and a volatile component gas, so that dissociation of the volatile component gas from the raw material melt 3 can be prevented.

The material of the vessel 5 will be described.

The vessel 5 may be made of quartz since it does not come into direct contact with the raw material melt 3.

However, if you want to pull higher quality crystals, the FBI
, PBN-coated carbon, amorphous impermeable carbon, aluminum nitride, boron nitride, silicon nitride, silicon carbide, molybdenum, or the like.

The same applies to the viewing window 7 and the vessel 5 in the following examples.

(To) Integrated type Figure 3 shows an example where the vessel and sub-crucible are integrated.

Although the vessel 5 forms a closed space, the outer peripheral wall of the sub-crucible 2 and the lower end of the vessel 5 are common.

The main crucible is separate.

Here, a state is shown in which only the melt 3.4 is contained in the main crucible 1 and the sub-crucible 2. Of course, a liquid sealant may be added to both.

When vessel 5 is raised, sub-crucible 20 is the main crucible 1.
Climb along the outer wall of.

(1) Separate type This is shown in FIGS. 4 and 5.

The vessel 5 is a cylindrical container with a downward opening. The lower end of the vessel 5 is immersed in the liquid of the sub-crucible 2.

In FIG. 4, a liquid sealant 11 is contained between the wall surface of the sub-crucible 2 and the outer periphery of the lower end of the vessel 5.

The volatile components of the atmosphere-forming melt 4 in the sub-crucible 2 should fill the interior space S of the vessel 5. If it evaporates into the external space W, it will be wasted. A liquid sealant 11 is provided to prevent this.

In this case, the lower end of the vessel is touching the melt of the compound. However, this is not a problem even if the vessel is made of quartz. This is because the melt in the sub-crucible is not used for crystal growth.

The one in FIG. 5 is also a separate type, but both the main crucible 1 and the sub-crucible 2 contain liquid sealant 11.

The material melt 3 in the main crucible 1 is held down by the liquid sealant.
It has the same meaning as the EC law.

The reason why the atmosphere-forming melt 4 in the sub-crucible 2 is suppressed with a liquid sealant is to avoid rapid volatilization of volatile component gases into the external space W.

The lower end of the vessel 5 is in the middle of the liquid sealant 11. Therefore, the liquid level opening of the liquid sealant in the sub-crucible, C, is the same height and the internal and external pressures are equal). It is better if the mouth is lower, but it doesn't have to be. The volatile components of the melt 4 of the sub-crucible can enter the interior space S through the opening.

The liquid sealant A of the raw material melt 3 is thicker than the liquid sealant opening C of the sub-crucible 2.

(7) Examples An InP single crystal was grown using an apparatus as shown in FIG.

In other words, the vessel and crucible are integrated.

Main crucible 1 is a 4 inch diameter PBN crucible. The vessel is graphite coated with PBN. The PBN crucible is supported on a graphite susceptor. The viewing window is sapphire.

InP 1000 g82033 in main crucible
00 g InP in sub-crucible 500.0 gB2
03500 g was charged.

The container was closed, the internal S1W was evacuated, and nitrogen gas was introduced to make the pressure 40 atm.

Heater 6.27 was energized and heated.

B20! Once it has melted, Vessel 5 is lowered,
As shown in FIG. 3, the interior space S was made into a sealed space by the vessel 5.

The temperature continued to rise.

InP in sub-crucible 2 began to melt first. At the same time, dissociation of P also occurs. Dissociated P filled the vessel.

Following this, the InP in the main crucible 1 was melted.

The upper shaft 8 was lowered, the seed crystal 10 was immersed in the raw material InP melt, and then the single crystal was pulled up.

An InP single crystal with a diameter of 2 inches was obtained. This single crystal ingot was sliced to give Ueno 1-, and the EPD was measured. The average value was 8 x 10''/d.

The EPD of InP single crystal grown by the normal LEG method is 4.
It is approximately ×104/i. Compared to this, EPD has decreased by one digit.

The weight of the crystals was 960.9 g.

The weight of InP remaining in the main crucible was 38.2 g.

The weight of (InP+In) remaining in the sub-crucible was 426.
It was 0 g.

Even though it was not lifted from the sub-crucible, there was a weight loss of 74 g. The sum of the residual content in the main crucible and the crystal weight is 9
It is 99.1 g. The reduction from the main crucible raw material is 0.9
It's just g.

From these facts, it is clear that P was dissociated from the InP melt in the auxiliary crucible and filled the vessel.

It can also be seen that the high pressure of P suppresses the dissociation of P from the crystal surface.

(2) Effect Since the space where the crystal is pulled can be filled with a high dissociation pressure component gas, it is possible to prevent the high dissociation component from escaping from the crystal surface.

Since the raw material melt has a lower temperature, the high dissociation pressure components will definitely dissociate from the melt in the sub-crucible. The raw material melt can maintain stoichiometry.

The temperature of the secondary crucible increases in parallel with the temperature of the main crucible, and the temperature of the secondary crucible is always higher. The timing of heating the crucible and the timing of increasing the partial pressure of the high dissociation pressure component gas naturally match.

When solids with high dissociation pressure components are placed inside the furnace, it is not easy to control the partial pressure. This is because the relationship between temperature and pressure is steep.

In the present invention, a melt of the compound is used.

The melt is dissociated to generate a gas containing a high dissociation pressure component. Therefore, the temperature-pressure relationship is more gentle.

When the high dissociation pressure component element is P instead of As, B2O
There is a relationship with 3. Most of the solid P is vaporized at the softening temperature of B2O3, and the P component disappears before sealing with B2O3.

The invention is also free from such drawbacks.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view of a main crucible and a sub-crucible for explaining the present invention in detail. FIG. 2 is a cross-sectional view of an example of the apparatus of the present invention, the type in which the vessel includes a crucible. FIG. 3 shows a second example of the apparatus of the present invention, and is a sectional view of one in which a vessel and a crucible are integrated. FIG. 4 is a sectional view showing a third example of the apparatus of the present invention, in which the lower end of the vessel is immersed in the sub-crucible melt. FIG. 5 is a sectional view showing a fourth example of the apparatus of the present invention, in which the lower end of the vessel is immersed in the liquid sealant of the sub-crucible. 1 ・・・・・・・・・ Main crucible 2 ・・・・・・・・・ Sub-crucible 3 ・・・・・・・・・ Raw material melt 4 ・・・・・・・・・ For atmosphere formation Melt 5...
・・・・・・ Vessel 6 ・・・・・・・・・ H-Tough ・・・・・・・・・ Peephole 8・・・・・・Top Axis 9・・・・・・...Lower axis 10...Seed crystal 11...Liquid sealant 13...
...... Pressure vessel 18 ...... Upper shaft through hole 19 ...
・・・・・・ Lower shaft through hole 21 ・・・・・・・・・
Upper sealant reservoir 22...Lower sealant reservoir 23.24...Liquid sealant S...Inner space W... ...... External space Q ...... Volatile component gas atmosphere
Akira Tadashi Nakagawa Hiromen Miyabi
Beauty 1st figure internal space S 2nd rxJ

Claims (20)

[Claims] (1) Put the raw materials for the high dissociation pressure compound and impurities if necessary into a crucible, or put them together with a liquid sealant, heat it with a heater to make a raw material melt, and use the seed crystal as a raw material. A high dissociation pressure compound single crystal that is pulled up by dipping it in a melt and pulling it up while rotating a seed crystal in an atmosphere of an inert gas and a volatile component gas of the compound semiconductor. In the growing method, in addition to the main crucible 1 in which the single crystal is to be pulled, a sub-crucible 2 that does not communicate with the main crucible 1 is provided,
The same high dissociation pressure compound was added to sub-crucible 2, and the same was added to main crucible 1.
The temperature of the atmosphere forming melt 4 in the sub-crucible 2 is higher than that of the raw material melt 3.
A single crystal growth method characterized by dissociating and filling a space S above a main crucible 1 with volatile component gas generated by the dissociation. (2) The method for growing a single crystal according to claim (1), wherein the melt 3 in the main crucible 1 and the melt 4 in the auxiliary crucible 2 are covered with a liquid sealant. (3) The raw material melt 3 in the main crucible 1 is covered with a liquid sealant, and the atmosphere forming melt 4 in the sub-crucible 2 is not covered with a liquid sealant. Range number (1)
Single crystal growth method described in section. (4) The unit according to claim (1), characterized in that neither the raw material melt 3 in the main crucible 1 nor the atmosphere forming melt 4 in the sub-crucible 2 is covered with a liquid sealant. Crystal growth method. (5) The upper space of the main crucible 1 and at least a part of the upper space of the sub-crucible 2 are surrounded by the vessel 5, and the volatile component gas dissociated from the atmosphere forming melt 4 and the non-volatile component gas dissociated from the atmosphere forming melt 4 are The active gas coexists, and the inert gas exists in the external space W, which is outside the vessel 5 and inside the pressure vessel 13, and the pressures in the internal space S and external space W are balanced through the liquid seal mechanism of the upper shaft. A method for growing a single crystal according to any one of claims (1) to (4). (6) The vessel 5 is a container with a downward opening, and the lower end thereof is immersed in the atmosphere forming melt 4 of the sub-crucible 2. Single crystal growth method. (7) A patent characterized in that there is a liquid sealant between the outer periphery of the vessel 5 and the sub-crucible 2, but there is no liquid sealant between the inner periphery of the vessel 5 and the outer periphery of the main crucible 1. A method for growing a single crystal according to claim (6). (8) The vessel 5 is a container with a downward opening, and the liquid sealant 11 is contained in the sub-crucible 2, and the lower end of the vessel 5 is inserted into the liquid sealant 11 of the sub-crucible 2. A method for growing a single crystal according to claim (5), characterized in that the single crystal is grown by immersion. (9) The method for growing a single crystal according to any one of claims (1) to (8), wherein the high dissociation pressure compound is a III-V group compound. (10) The method for growing a single crystal according to any one of claims (1) to (8), wherein the high dissociation pressure compound is a II-VI group compound. (11) A main crucible 1 into which the high dissociation pressure compound raw material or raw materials and a liquid sealant are to be placed, and an auxiliary crucible 2 which is formed around the outer periphery of the main crucible 1 and into which the high dissociation pressure compound raw materials or raw materials and a liquid sealant are to be placed. , a lower shaft 9 that supports the main crucible 1 and the sub-crucible 2 so as to be rotatable up and down, and an upper shaft that can be rotated up and down to pull a single crystal from the raw material melt in the main crucible 1 with a seed crystal attached to the lower end. 8, a vessel 5 for making the upper part of the main crucible 1 and at least a part of the upper part of the sub-crucible 2 a sealed space;
An upper sealant reservoir 21 for liquid-sealing the upper shaft through hole 18 at the upper end of the vessel 5, a viewing window 7 provided through the side wall of the vessel 5, and a sub-crucible 2 and a main crucible located outside the vessel 5. 1 and a heater 6 that heats the upper sealant reservoir 21.
a heater 27 for heating the liquid sealant 23 of the main crucible 1; ,
Sub-crucible 2, heater 6, vessel 5, upper shaft 8, lower shaft 9,
A single crystal growth apparatus characterized by comprising a pressure vessel 13 surrounding a viewing window 7. (12) The single crystal growth apparatus according to claim (11), wherein the vessel 5 is a closed container and includes the entire main crucible 1 and sub-crucible 2. (13) The single crystal growth apparatus according to claim (11), wherein the vessel 5 is integrated with the sub-crucible 2 and the main crucible 1 to form a sealed space. (14) The vessel 5 is a cylindrical container with an open lower end, and the lower end is immersed in the raw material melt or liquid sealant of the sub-crucible 2.
) The single crystal growth apparatus described in item 2. (15) The single crystal growth apparatus according to any one of claims (11) to (14), wherein the viewing window 7 is made of transparent quartz. (16) I in the part inside the vessel 5 of the peephole 7.
The single crystal growth apparatus according to claim (15), characterized in that it is coated with n_2O_3. (17) The single crystal growth apparatus according to any one of claims (11) to (14), wherein the viewing window 7 is made of sapphire. (18) The single crystal growth apparatus according to any one of claims (11) to (17), characterized in that the viewing window is a concave lens or has a tip processed into a concave lens. . (19) The material of the vessel is one or a combination of PBN, carbon coated with PBN, amorphous impermeable carbon, aluminum nitride, boron nitride, silicon nitride, silicon carbide, and molybdenum. A single crystal growth apparatus according to any one of claims (11) to (14), characterized in that: (20) The single crystal growth apparatus according to any one of claims (11) to (14), wherein the material of the vessel is quartz.