JPS63274175A - Heterojunction element and manufacture thereof - Google Patents
Heterojunction element and manufacture thereofInfo
- Publication number
- JPS63274175A JPS63274175A JP10949987A JP10949987A JPS63274175A JP S63274175 A JPS63274175 A JP S63274175A JP 10949987 A JP10949987 A JP 10949987A JP 10949987 A JP10949987 A JP 10949987A JP S63274175 A JPS63274175 A JP S63274175A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- siasx
- arsenic
- emitter
- hbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 11
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 10
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims abstract description 6
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical compound [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012159 carrier gas Substances 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 239000001307 helium Substances 0.000 claims abstract description 3
- 229910052734 helium Inorganic materials 0.000 claims abstract description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010453 quartz Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 25
- 239000000463 material Substances 0.000 abstract description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 125000005842 heteroatom Chemical group 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 1
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241001614291 Anoplistes Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010024229 Leprosy Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7375—Vertical transistors having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ヘテロ接合素子及びその製造方法に関するも
のであり、特に、シリコンとの間にヘテロ接合を形成す
るワイドギャップ半導体材料を提供する。本発明による
ワイドギャップ半導体材料は、シリコン系のヘテロダイ
オード材料として実用に適するものであり、シリコン系
ヘテロエミッタバイポーラトランジスタ（以下５ｉ−Ｈ
ＢＴ）のエミッタ材料にも使用できる。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a heterojunction device and a method for manufacturing the same, and particularly provides a wide gap semiconductor material that forms a heterojunction with silicon. The wide gap semiconductor material according to the present invention is suitable for practical use as a silicon-based heterodiode material, and is suitable for use in silicon-based hetero-emitter bipolar transistors (hereinafter referred to as 5i-H
It can also be used as an emitter material for BT).
近年のシリコンバイポーラトランジスタの高速化には著
しいものがあり、ＬＳＩ用の微細トランジスタにおいて
は遮断周波数２０ないし２５ＧＨｚに達するものが開発
されている。そしてより一層の高速化に対する要求は非
常に強く、次の目標として遮断周波数を５０ＧＨｚ以上
に向上させることが検討されている。ところで、トラン
ジスタの高速化の手法として最も効果的なものはベース
幅の縮小であリ、５０ＧＨｚを越えるトランジスタに対
しては数１００Å以下の薄いベースが必要であるとされ
ている。The speed of silicon bipolar transistors has increased significantly in recent years, and micro transistors for LSIs with cut-off frequencies of 20 to 25 GHz have been developed. There is a very strong demand for even higher speeds, and increasing the cut-off frequency to 50 GHz or higher is being considered as the next goal. By the way, the most effective method for increasing the speed of a transistor is to reduce the base width, and it is said that a thin base of several hundred angstroms or less is required for a transistor exceeding 50 GHz.
しかし、ベース幅を縮小させるときには、動作上で必要
なエミッタ・コレクタ間耐圧（通常のＬＳＩに使うとき
には余裕を見込んで８〜ｌ０Ｖ）を確保すると同時にベ
ース抵抗の増加を抑える（あるいは高速化のためにベー
ス抵抗を一層低減させる）ため、ベース不純物濃度を高
くとることが不可欠となる。上記数１００人級の薄いベ
ースでは１ｇ１９０．−１かそれ以上の高い不純物濃度
を要し、これは現状の高速トランジスタの債より１〜２
桁高い。ところがベース濃度を高くすると電流増幅率ｈ
ＦＥが激減し、このため実用的なベース濃度の上限が抑
えられる。現在のトランジスタ構造を踏襲する限り、動
作上で必要なｈｖｔＯ値（約５０以上）を確保するため
にはベース濃度を約５ ＸＩＯ”ｃｉｍ−’以下に抑え
なくてはならず、したがってベース幅をあまり縮小させ
ることができない。However, when reducing the base width, it is necessary to ensure the emitter-collector breakdown voltage necessary for operation (8 to 10 V with allowance for normal LSI use), and at the same time suppress the increase in base resistance (or to increase speed). (to further reduce the base resistance), it is essential to increase the base impurity concentration. 1g190 for the above 100-person thin base. It requires a high impurity concentration of −1 or more, which is 1 to 2 times higher than that of current high-speed transistors.
An order of magnitude higher. However, when the base concentration is increased, the current amplification factor h
FE is drastically reduced, which limits the practical upper limit of base concentration. As long as the current transistor structure is followed, the base concentration must be kept below about 5 XIO"cim-' in order to secure the hvtO value required for operation (approximately 50 or more), and therefore the base width must be reduced. It cannot be reduced much.
以上の問題を解決するため、５ｉ−ＩＩＢＴの開発が検
討されている。エミッタにワイドギャップは半導体材料
を用いればベース濃度が高くともｈＦＥを確保できるの
で、ＨＢＴは超高速トランジスタとしての可能性が非常
に高い。しかしＧａＡＳ系の半導体材料と異なってシリ
コン系半導体には現在のところ効果的なワイドギャップ
材料がな（、これが５ｉ−ＨＢＴの開発を難しいものと
している。現在までに提案されたエミッタ材料は、酸素
を含むシリコンＳｉＯｘ 、アモルファス炭化シリコン
ａ ５ｉＣｘ＋ シリコンカーバイト（ＳｉＣ） 、
含水素アモルファスシリコン（ａ −Ｓｉ：ＩＩ） 、
燐化ガリウム（ＧａＰ）等があるが、これらはいずれも
研究段階にあって直ちに実用することはできない。した
がって、５ｉ−ＨＢＴを実現するためのワイドギャップ
材料の開発が重要な問題であった。In order to solve the above problems, the development of 5i-IIBT is being considered. If a semiconductor material with a wide gap is used for the emitter, hFE can be ensured even if the base concentration is high, so the HBT has great potential as an ultra-high speed transistor. However, unlike GaAS-based semiconductor materials, there are currently no effective wide-gap materials for silicon-based semiconductors (this makes the development of 5i-HBT difficult). containing silicon SiOx, amorphous silicon carbide a 5iCx+ silicon carbide (SiC),
Hydrogen-containing amorphous silicon (a-Si:II),
Although there are gallium phosphide (GaP) and the like, these are all in the research stage and cannot be put into practical use immediately. Therefore, the development of wide gap materials for realizing 5i-HBT has been an important issue.
本発明は、以上の点に鑑でなされたものであり、実用的
なシリコン系ワイドギャップ材料を提供するものである
。すなわち本発明はシリコンと砒素の２元素からなる、
アモルファス材料シリコン砒素（以下５ｉＡｓ、 ）を
提案し、これをシリコンに対するヘテロ材料および５ｉ
−ＨＢＴのエミッタ材料としてイ吏おうとするものであ
る。このａ−ＳｉＡｓｘは、シリコンより大きいバンド
ギャップを有するとともに、シリコンとの接合界面準位
が実用上で問題とならない程度に少ない、また後述する
ように、ａ−ＳｉＡｓ、はアモルファス材料としては抵
抗率が低いので、直列抵抗を増加させることが少ない良
好なワイドギャップ材料である。The present invention has been made in consideration of the above points, and provides a practical silicon-based wide gap material. That is, the present invention consists of two elements, silicon and arsenic.
We proposed the amorphous material silicon arsenide (hereinafter referred to as 5iAs), and used it as a hetero material for silicon and 5iAs.
- It is intended to be used as an emitter material for HBT. This a-SiAsx has a larger band gap than silicon, and the junction interface state with silicon is so small that it does not pose a practical problem.As will be explained later, a-SiAs has a low resistivity as an amorphous material. Because of its low resistance, it is a good wide-gap material that rarely increases series resistance.
次に本材料の詳細と５ｉ−ＨＢＴへの使用例について述
べる。Next, details of this material and an example of its use in 5i-HBT will be described.
アモルファス−シリコン砒素（ａ −ＳｉＡｓｘ ）の
形成方法
本発明に用いるａ−５ｉＡｓｗは主として減圧ＣＶＤ法
により形成する。そのためのＣｖＤ装置系を第１図に示
す。原料ガスとしてジシランＳｉ、）１．とアルシンＡ
ｓＨ，を使用し、キャリアガスとしてヘリウムＨｅを用
いる。これらを石英反応管に導いて４５０〜５００℃で
熱分解させシリコンウェハ上にａ−３ｉＡｓヨの薄膜を
堆積する。反応時のガス圧力は例えば５０〜２００Ｐａ
、ガス流量比の一例は５ｉｚＨａ ：ＡｓＨｔ：Ｈｅ
＝５ ＝ １ ：５０であり、このときａ ５ｉＡ
ｓＸの堆積速度は４５０℃で５〜２０ｎｓ／分、組成は
砒素ｌＯ〜３０ｍｏ１％（ｘ＝０．１〜０．３）が代表
的な値である。Method for Forming Amorphous Silicon Arsenic (a-SiAsx) The a-5iAsw used in the present invention is mainly formed by a low pressure CVD method. A CvD equipment system for this purpose is shown in FIG. Disilane Si as raw material gas,)1. and Arsine A
sH, and helium He is used as the carrier gas. These are introduced into a quartz reaction tube and thermally decomposed at 450 to 500°C to deposit a thin film of a-3iAs on a silicon wafer. The gas pressure during the reaction is, for example, 50 to 200 Pa.
, an example of the gas flow rate ratio is 5izHa:AsHt:He
=5 = 1:50, and at this time a 5iA
The deposition rate of sX is typically 5 to 20 ns/min at 450° C., and the typical composition is 10 to 30 mol% arsenic (x=0.1 to 0.3).
このようにして形成したａ−５ｉＡｓ、は完全なアモル
ファス状態にあり、Ｘ線回折をみても特異的なピークは
みられない。また水素は実質的に全く含まれず、シリ、
コンと砒素の２元素だけで構成されている。この５ｉＡ
３ｘは７００℃までの熱処理に対してアモルファス状態
を保つ。反応ガスとしてジシランに代えシラン５ｉＨｎ
を使うことも可能であるが、堆積速度が１桁近く低下す
るので実用的にはジシランが適していると思われる。キ
ャリアガスに水素ｔｉｔを用いてもよく、このときでも
堆積膜中に水素は含まれない。なお、ａ−ＳｉＡｓｘの
形成方法として、ＣｖＤ法以外にスパッタ法とアモルフ
ァスＳｉ膜への砒素イオン注入法を試みた。その結果、
これらの方法でも条件を選べはａ−ＳｉＡｓｘの薄膜を
形成できることが判明した。しかしＣＶＤ法による堆積
膜と異なってシリコンとの接合界面準位が多いｆ頃向に
あるので、少くともＨＢＴのエミッタ材料にはあまり適
さないように思われる。現在までの実験結果をみるかぎ
り、本発明に用いるａ−３ＩＡＳＸとしてはＣＶＤ法に
よるものが最良の特性を示す。The a-5iAs thus formed is in a completely amorphous state, and no specific peaks are observed in X-ray diffraction. In addition, it contains virtually no hydrogen, silica,
It is composed of only two elements: carbon and arsenic. This 5iA
3x remains amorphous even after heat treatment up to 700°C. Silane 5iHn instead of disilane as reaction gas
Although it is also possible to use disilane, it seems that disilane is suitable for practical use because the deposition rate decreases by nearly an order of magnitude. Hydrogen tit may be used as the carrier gas, and even in this case, hydrogen is not included in the deposited film. As a method for forming a-SiAsx, in addition to the CvD method, a sputtering method and a method of implanting arsenic ions into an amorphous Si film were tried. the result,
It has been found that a thin film of a-SiAsx can be formed by these methods if the conditions are selected. However, unlike a film deposited by the CVD method, it has many junction interface states with silicon in the f direction, so it seems not to be suitable at least as an emitter material for an HBT. As far as the experimental results to date are concerned, the a-3IASX used in the present invention exhibits the best characteristics when produced by the CVD method.
（ａ ＳｉＡｓｘの物性）
ａ−ＳｉＡｓｘはシリコンよりバンドギャップの大きい
半導体である。第２図は減圧ＣＶＤ法によるａＳｉＡｓ
ｘのバンドギャップを組成Ｘの関数として示したもので
、この値は赤外吸収特性から求めた。(Physical properties of a-SiAsx) a-SiAsx is a semiconductor with a larger band gap than silicon. Figure 2 shows aSiAs produced by low pressure CVD method.
It shows the bandgap of x as a function of composition X, and this value was determined from infrared absorption characteristics.
図示の如く、砒素の組成割合を増加させていくと、初め
ｘ＝０．０２＜らいまでは純粋なアモルファスＳＳと比
べてバンドギャップが低下する。その後Ｘ＝０．０５
＜らいから次第にバンドギャップが増加し、ｘ＝０．３
程度でアモルファスＳｉの値と同じになる。As shown in the figure, as the composition ratio of arsenic is increased, the band gap decreases compared to pure amorphous SS until x=0.02<. Then X=0.05
<The band gap gradually increases from leprosy, x=0.3
The value is approximately the same as that of amorphous Si.
結晶シリコンのバンドギャップは１．ｌｅＶなので、ａ
５ｉＡ３ｘは組成にかかわらずシリコンよりもバン
ドギャップが大きい。ただし、Ｘ ＞０．４の領域では
堆積膜の表面が粗になり平坦性を欠くようになると同時
に堆！ｎ後の特性安定が低下し、また膜の堆積速度も激
減するので実用的ではない。一方、ｘ＜０．０５の領域
はアモルファス状態が不安定であり、４００℃数１０時
間くらいの熱処理で結晶化が始まる。それ以外の０．０
５≦Ｘ≦０．４の範囲では、いずれの組成でもシリコン
に対する実用的なワイドギャップ材料として使用できる
。The band gap of crystalline silicon is 1. Since leV, a
5iA3x has a larger band gap than silicon regardless of its composition. However, in the region of This is not practical because the stability of the properties after n is reduced and the deposition rate of the film is also drastically reduced. On the other hand, in the region where x<0.05, the amorphous state is unstable, and crystallization begins after heat treatment at 400° C. for about 10 hours. Other 0.0
In the range of 5≦X≦0.4, any composition can be used as a practical wide gap material for silicon.
第３図は減圧ｃｖｎ法によるａ−ＳｉＡｓ、Ｉの抵抗率
と組成の関係を示している。純粋なアモルファスＳｉは
非常に高い抵抗率を示すが、砒素を添加すると抵抗率は
急激に低下する。さらに砒素の割合を増加させると、抵
抗率はｘ＝０．０５で最小となった後、ゆるやかに増加
し、ｘ ＞Ｑ、４で再び高い値に増加する。実用上は抵
抗率の低いことが好ましいので、ａ−ＳｉＡｓｘの組成
としては０．０５≦Ｘ≦０．４の範囲を使う必要がある
。より好ましくは０．０５≦Ｘ≦０．３の範囲が使用に
適しており、この場合の抵抗率は３００〜２０００Ω−
ｃｍ程度の値である。なお、Ｘ−Ｏ，０２〜０．０５の
範囲でも低い抵抗率は得られるが、この領域は抵抗率の
組成依存性がクリティカルで制御が難しいこと、ならび
に前記のようにアモルファス状態の安定性に忙しいので
実用的ではない。FIG. 3 shows the relationship between resistivity and composition of a-SiAs, I obtained by the reduced pressure CVN method. Pure amorphous Si exhibits very high resistivity, but when arsenic is added, the resistivity decreases rapidly. When the proportion of arsenic is further increased, the resistivity reaches a minimum at x=0.05, then increases slowly, and increases again to a high value when x>Q, 4. Practically speaking, it is preferable that the resistivity be low, so it is necessary to use a composition of a-SiAsx in the range of 0.05≦X≦0.4. More preferably, the range of 0.05≦X≦0.3 is suitable for use, and in this case, the resistivity is 300 to 2000Ω-
The value is approximately cm. Note that low resistivity can be obtained even in the range of X-O, 02 to 0.05, but the composition dependence of resistivity in this region is critical and difficult to control, and as mentioned above, the stability of the amorphous state is affected. It's too busy to be practical.
ａ−５ｉＡｓ＋＋を０．０５５ｘ Ｓｏ、３の範囲で測
定したところ、すべてｎ形を示し、電子濃度は１９１６
〜１０１ｃｍ−’、移動度は０．’ｌ ＝０．２ ｃ
ｍ” ／Ｖｓ程度の範囲にあった。電気伝導機構は室温
でバンド伝導と判定された。When a-5iAs++ was measured in the range of 0.055x So, 3, all showed n-type, and the electron concentration was 1916
~101 cm-', mobility is 0. 'l=0.2c
The electrical conduction mechanism was determined to be band conduction at room temperature.
（Ｓｉ−）ＩＢＴへの応用）
ａ−５ｉＡｓ、ｔを５ｉ−ＨＢＴのエミッタに応用する
に先立って、ａ−３ｉＡＳｘと、ｐ形シリコンのヘテロ
接合ダイオードを構成し、電圧電流特性のｎ値を測定し
た。その結果、ｎ値はｘ＝０．１５〜０．２５の範囲で
最小値を示し、そのときの債はｎ＝１．０８〜１．１０
であった。したがって５ｉ−）ＩＢＴのエミッタとして
はＸ＝ ０．１５の組成を用いることとして、次のよう
な構造の５ｉ−ＨＢＴを製作した。(Si-) Application to IBT) Before applying a-5iAs,t to the emitter of 5i-HBT, a p-type silicon heterojunction diode is constructed with a-3iASx, and the n value of the voltage-current characteristics is determined. It was measured. As a result, the n value shows the minimum value in the range of x = 0.15 to 0.25, and the bond at that time is n = 1.08 to 1.10.
Met. Therefore, a 5i-HBT having the following structure was manufactured by using a composition of X=0.15 as the emitter of the 5i-)IBT.
第４図にその５ｉ−ＨＯＴ構造例を示す。同図において
、１は抵抗率０．０１５Ω−ｃｍ厚さ５００μｍのｎ形
基板、２は抵抗率０．２Ω−ｃｍ厚さ０．８μｍのｎ形
エピタキシャル層、３は深さ０．１ μｍのベース拡散
層（表面濃度は後述）、４はシリコン酸化膜、５は厚さ
５００ 人のａ −５ｉＡｓ、 （ｘ＝０．１５）
、６は高濃度（５ＸＩＯ”ｃｍ−’）に砒素を含む多結
晶シリコン層、７はエミッタ電極、８はベース電極、９
はコレクタ電極を示す。多結晶シリコン層６は、薄いａ
−ＳｉＡｓｘ層を保護するために設ける。ａ −５ｉＡ
ｓ、の上に多結晶シリコンを堆積するときは、ａ−Ｓｉ
Ａｓｘ形成後に温度を６００℃に上げ、アルシンの流量
を減らしてそのまま多結晶シリコンを堆積すればよい。FIG. 4 shows an example of the 5i-HOT structure. In the figure, 1 is an n-type substrate with a resistivity of 0.015 Ω-cm and a thickness of 500 μm, 2 is an n-type epitaxial layer with a resistivity of 0.2 Ω-cm and a thickness of 0.8 μm, and 3 is an n-type epitaxial layer with a depth of 0.1 μm. Base diffusion layer (surface concentration will be described later), 4 is silicon oxide film, 5 is 500 mm thick a-5iAs, (x=0.15)
, 6 is a polycrystalline silicon layer containing arsenic at a high concentration (5XIO"cm-'), 7 is an emitter electrode, 8 is a base electrode, 9
indicates the collector electrode. The polycrystalline silicon layer 6 has a thin a
- Provided to protect the SiAsx layer. a-5iA
When depositing polycrystalline silicon on s, a-Si
After forming Asx, the temperature may be raised to 600° C., the flow rate of arsine may be reduced, and polycrystalline silicon may be directly deposited.
ベース拡散層の表面濃度については、深さを０．１ μ
ｍに保って１０”〜ｌＯ” ｃ ｍ−”の範囲に変えた
試料を形成した。なお、ベースはボロンドープＳｉｎ、
からのボロン拡散により形成した。For the surface concentration of the base diffusion layer, the depth was set to 0.1 μ
Samples were prepared in which the temperature was maintained at m and varied in the range of 10" to lO" cm.The base was made of boron-doped Sin,
It was formed by boron diffusion from.
第５図は、上記５ｉ−ＨＢＴの電流増幅率をベース表面
濃度の関数として示す。図中実線が５ｉ−）ＩＢＴの測
定値である０図のように、本発明によるａ −ＳｉＡｓ
ｘのエミッタを用いると、ベース表面濃度ＩＱ１９ｃｍ
−’でも）１ｐＥ＝７Ｑ、 １０”ｃｍ−’の高濃度で
もｈ ｒ ｔ ：３０が確保できる。図の点線はａ
ＳｉＡｓｘによらない通常構造のエミッタを持つ場合の
り、であり、ＩＱｌ ９Ｃｍ−３以上の高濃度ベースで
はほとんどｈＦＥＯ値がとれない。以上の比較から明ら
かなように、本発明のヘテロ材料ａ−３ｉＡｓｘはＩＱ
”ｃｍ−’以上のベース濃度を使用可能とするものであ
り、したがって高速トランジスタを構成するに際して多
大の貢献をなすものである。FIG. 5 shows the current amplification factor of the 5i-HBT as a function of base surface concentration. The solid line in the figure is the measured value of 5i-)IBT.
When using an emitter of x, the base surface concentration IQ is 19cm
-') 1pE=7Q, h r t :30 can be secured even at a high concentration of 10"cm-'. The dotted line in the figure is a
This is the case when the emitter has a normal structure that is not based on SiAsx, and the hFEO value can hardly be obtained at a high concentration base of IQl 9Cm-3 or more. As is clear from the above comparison, the heteromaterial a-3iAsx of the present invention has an IQ
This makes it possible to use a base concentration of "cm-" or more, and therefore makes a great contribution in constructing high-speed transistors.
以上述べた通り、本発明は単結晶シリコンとの間にヘテ
ロ接合を形成するワイドギャップ半導体材料を提供する
ものであり、このワイドギャップ半導体はアモルファス
−シリコン砒素材料から成る。従って、この材料を５ｉ
−ＨＢＴのエミッタとして使用する場合にはベース濃度
を高（しても（１０”ｃ ｍ−３） 、 ｈｖｔ＝３
０程度を確保することができるので高速トランジスタに
使用可能となる。As described above, the present invention provides a wide-gap semiconductor material that forms a heterojunction with single crystal silicon, and the wide-gap semiconductor is comprised of an amorphous-silicon arsenic material. Therefore, this material is 5i
- When used as an emitter of HBT, the base concentration is high ((10" cm-3), hvt=3
Since approximately 0 can be ensured, it can be used for high-speed transistors.
第１図は、本発明に使用するアモルファス−シリコン砒
素（ａ −ＳｉＡｓｘ ）の製造装置の説明用図面であ
る。
第２図はａ−ＳｉＡｓ、のバンドギャップを組成Ｘの関
数として示す。
第３図は、ａ−３ｉＡｓｘの抵抗率と組成Ｘの関係を示
す。
第４図は、本発明を適用した５ｉ−ＨＢＴ（シリコン系
ヘテロエミッタバイポーラトランジスタ）の構造を示す
。
第５図は、ａ−５ｉＡｓ、をエミッタとするＳｉ〜ＨＢ
Ｔのｈｒｖとベース表面濃度の関係を示す。
特許出願人 日本電信電話株式会社代理人 弁理士
玉 蟲 久五部
（外２名）
電気炉
ａ−ＳｉＡｓｘのＣＶ １４積装置系
第 １ 図
０ ０．１ ０．２ ０．３
０．４（アモルファスＳ ｉ ） ａ−
８１Ａｓｘの組成（Ｘの値）ａ−８ｉＡｓｘのバンドギ
ヤ・ツブと組成の関係第 ２ 図
ａ−８ｉＡｓｘの組成（Ｘの値）
ａ−８ｉＡｓｘの抵抗上に組成の関係
第 ６ 図
３−８ｉＡＳＸをエミッタとする５ｉ−１１１３Ｔ第
４ 図FIG. 1 is an explanatory drawing of a manufacturing apparatus for amorphous silicon arsenic (a-SiAsx) used in the present invention. FIG. 2 shows the bandgap of a-SiAs as a function of composition X. FIG. 3 shows the relationship between resistivity and composition X of a-3iAsx. FIG. 4 shows the structure of a 5i-HBT (silicon-based heteroemitter bipolar transistor) to which the present invention is applied. Figure 5 shows Si~HB with a-5iAs as the emitter.
The relationship between T hrv and base surface concentration is shown. Patent applicant Nippon Telegraph and Telephone Corporation agent Patent attorney Tamamushi Kugobe (2 others) Electric furnace a-SiAsx CV 14 stack equipment system No. 1 Figure 0 0.1 0.2 0.3
0.4 (amorphous S i ) a-
Composition of 81Asx (value of 5i-1113T No.
4 Figure
Claims (1)
成されるアモルファス半導体をエミッタとし、該アモル
ファス半導体と結晶シリコンとのヘテロ接合を有するこ
とを特徴とするヘテロ接合素子。 ２、ジシランＳｉ＿２Ｈ＿６、アルシンＡｓＨ＿３及び
ヘリウムＨｅをキャリアガスとして石英反応管に導入し
、４５０〜５００℃にて熱分解して単結晶シリコンウェ
ハ上にアモルファス−シリコン砒素ａ−ＳｉＡｓ＿ｘ（
ただし、０．０５＜ｘ＜０．４）を堆積し、エミッタし
たことを特徴とするヘテロ接合素子の製造方法。[Claims] A heterojunction element characterized by having an emitter of an amorphous semiconductor composed of 1.5 mol% to 40 mol% arsenic and the remainder silicon, and having a heterojunction between the amorphous semiconductor and crystalline silicon. . 2. Disilane Si_2H_6, arsine AsH_3 and helium He are introduced into a quartz reaction tube as carrier gas, and thermally decomposed at 450-500°C to form amorphous silicon arsenic a-SiAs_x (
However, the method for manufacturing a heterojunction device is characterized in that 0.05<x<0.4) is deposited and emittered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10949987A JPS63274175A (en) | 1987-05-01 | 1987-05-01 | Heterojunction element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10949987A JPS63274175A (en) | 1987-05-01 | 1987-05-01 | Heterojunction element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63274175A true JPS63274175A (en) | 1988-11-11 |
Family
ID=14511805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10949987A Pending JPS63274175A (en) | 1987-05-01 | 1987-05-01 | Heterojunction element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63274175A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0543759A2 (en) * | 1991-11-20 | 1993-05-26 | International Business Machines Corporation | A poly-emitter structure with improved interface control |
| JP2006511084A (en) * | 2002-12-20 | 2006-03-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Manufacturing method of semiconductor device |
-
1987
- 1987-05-01 JP JP10949987A patent/JPS63274175A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0543759A2 (en) * | 1991-11-20 | 1993-05-26 | International Business Machines Corporation | A poly-emitter structure with improved interface control |
| US5374481A (en) * | 1991-11-20 | 1994-12-20 | International Business Machines Corporation | Polyemitter structure with improved interface control |
| JP2006511084A (en) * | 2002-12-20 | 2006-03-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Manufacturing method of semiconductor device |
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