JPS63269543A - Soaking stage of heat pipe system - Google Patents
Soaking stage of heat pipe systemInfo
- Publication number
- JPS63269543A JPS63269543A JP10416387A JP10416387A JPS63269543A JP S63269543 A JPS63269543 A JP S63269543A JP 10416387 A JP10416387 A JP 10416387A JP 10416387 A JP10416387 A JP 10416387A JP S63269543 A JPS63269543 A JP S63269543A
- Authority
- JP
- Japan
- Prior art keywords
- container
- heat pipe
- face
- shaped
- protrusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002791 soaking Methods 0.000 title claims abstract description 26
- 238000009833 condensation Methods 0.000 claims abstract description 11
- 230000005494 condensation Effects 0.000 claims abstract description 11
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 19
- 239000007788 liquid Substances 0.000 abstract description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000007689 inspection Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000011156 evaluation Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 6
- 238000012854 evaluation process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はガリウムーヒ素半導体ウェハーの検査評価工程
等に用いるヒートパイプ式均熱台に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a heat pipe type soaking table used in the inspection and evaluation process of gallium-arsenide semiconductor wafers.
〔従来の技術および発明が解決すべき問題点〕物質の加
熱においては、加熱面の湿度の均一性が問題となること
が多い。即らある一定の面積を有する加熱面の温度に局
所的なバラツキがあった場合、それを用いて製造される
製品の品質のむらに直結することは明白である。[Problems to be solved by the prior art and the invention] In heating substances, uniformity of humidity on the heating surface is often a problem. That is, it is clear that if there is local variation in the temperature of a heating surface having a certain area, this will directly lead to unevenness in the quality of products manufactured using the heating surface.
一般的には従来から台状金属を直接ヒータ等で加熱する
方式がとられていた。この場合表面温度がある程度ばら
つくことはいうまでもないが、従来の技術分野ではさほ
ど高精度の均一性は要求されなかった。ところが近年急
速に開発が進みつつあるガリウムーヒ素半導体ウェハー
の検査評価工程等においては、加熱表面温度を±1°C
以内におさえる必要があり、高精度の均熱台に対する要
請が極めて大きくなった。Generally, a method has been used in the past in which the metal plate is directly heated with a heater or the like. In this case, it goes without saying that the surface temperature varies to some extent, but in the conventional technical field, highly accurate uniformity was not required. However, in the inspection and evaluation process of gallium-arsenide semiconductor wafers, which has been rapidly developed in recent years, the heating surface temperature must be kept at ±1°C.
Therefore, the demand for high-precision soaking tables has become extremely large.
このような中で均熱台と加熱源とをヒートパイプで結ぶ
方式や均熱台自体をヒートパイプ化する方式が開発され
ているが、前者の場合にはピー1〜パイプをいかに高密
度に配置しても表面の温度を±1℃におさえることは不
可能である。Under these circumstances, methods have been developed in which a heat pipe is used to connect the soaking table and the heating source, and a method in which the soaking table itself is made into a heat pipe. Even with this arrangement, it is impossible to control the surface temperature to ±1°C.
また後者の場合、ヒートパイプ凝縮面の凝縮液が滴下す
る以前に凝縮面上で不均一に偏在する液膜を形成するた
め、温度分布にある程度のバラツキが生じる欠点があっ
た。Furthermore, in the latter case, before the condensate on the heat pipe condensing surface drips, a liquid film is formed that is unevenly distributed on the condensing surface, which has the disadvantage that the temperature distribution varies to some extent.
(問題点を解決するための手段)
本発明はこれに鑑み種々検討の結果、先端技術分野が要
請する高精度の温度均一性を有するヒートパイプ式均熱
台を開発したもので、台状容器内を真空引きして作動液
を封入することにより、ピー1〜パイプ化し、該容器の
両底面の何れか一方を作動液凝縮面として均熱を行なわ
せる台において、凝縮面の容器内側に角錐又は円錐状の
突起を面全体に稠密に設けたことを特徴とするものであ
る。(Means for Solving the Problems) In view of this, the present invention has been developed as a result of various studies and has developed a heat pipe-type soaking table having highly accurate temperature uniformity required in the field of advanced technology. By evacuating the inside and sealing the working fluid, it is made into a pipe, and one of the bottoms of the container is used as a condensing surface for the working fluid to perform uniform heating, and a pyramid is placed inside the container on the condensing surface. Alternatively, it is characterized by densely provided conical protrusions over the entire surface.
台状容器の均熱を行なわせる面の容器内側を作動液凝縮
面とし、その面に角錐又は円錐状の突起を面全体に稠密
に設けることにより、凝縮液は面の全体に均一に分布す
るようになる。その結果加熱面の温度分布を均一に保持
し、温度のバラツキを±1°C以内におさえることがで
きる。By using the inside of the trapezoidal container, which is the surface for uniform heating, as the working fluid condensation surface, and by providing pyramidal or conical projections densely over the entire surface, the condensed liquid is distributed uniformly over the entire surface. It becomes like this. As a result, the temperature distribution on the heating surface can be maintained uniformly, and temperature variations can be kept within ±1°C.
台状容器としては台状のものであればよいが、その使用
上から角錐台又は円錐台とすることが望ましく、その両
底面の何れか一方を加熱面とし、その容器内側を作動液
凝縮面として角錐又は円錐状突起を設ける。このような
突起としては加工上四角鉗又は三角誰とすることが望ま
しく、その底面の一辺の長さを2〜20#1、高さを2
〜20mとする。これは突起の底面の長さと高さがそれ
ぞれ2#未満では凝縮液が突起間を充填して凝縮面上に
液膜を形成するようになるためであり、また突起の底面
の長さと高さがそれぞれ20Mnを越えると凝縮液の分
布がマクロ的な次元となって意味がなくなるためである
。The truncated container may be any truncated container, but it is preferable to use a truncated pyramid or a truncated cone from the viewpoint of use. One of the bottoms of the container should be the heating surface, and the inside of the container should be the condensing surface for the working fluid. A pyramid or conical protrusion is provided as a base. It is desirable to use a square or triangular protrusion for processing purposes, and the length of one side of the base should be 2 to 20 #1, and the height should be 2.
~20m. This is because if the length and height of the bottom of the protrusion are less than 2mm, the condensate will fill between the protrusions and form a liquid film on the condensation surface. This is because if each exceeds 20 Mn, the distribution of the condensate becomes macro-dimensional and becomes meaningless.
凝縮面の大きざとしては20〜600cIiとすること
が望ましく、2OC=未満では均熱台としてのやくねり
を果せず、600 crAを越えると高精度の均一化が
困難となるためである。作動液としては使用目的に応じ
て選択使用すればよいが、ガリウムーヒ素半導体ウェハ
ーの検査評価用としてはナフタレンを用い、容器の材質
としてはステンレス鋼を用いる。また内圧上昇により均
熱を行なわせる均熱面の歪を防止するために、容器の両
底面間に支柱を設けるとよい。The size of the condensing surface is preferably 20 to 600 cIi, because if it is less than 2OC, it will not be able to function as a soaking table, and if it exceeds 600 crA, it will be difficult to achieve high-precision uniformity. The working fluid may be selected depending on the purpose of use, but naphthalene is used for inspection and evaluation of gallium-arsenide semiconductor wafers, and stainless steel is used as the material for the container. Further, in order to prevent distortion of the heat-uniforming surface due to an increase in internal pressure, it is preferable to provide a support between the bottom surfaces of the container.
(実施例〕
第1図及び第2図は本発明均熱台の一実施例を示すもの
で、図において(1)はステンレス鋼からなる高さ34
m、一方の底面の直径130m。(Example) Figures 1 and 2 show an example of the soaking table of the present invention.
m, diameter of one bottom surface 130 m.
他方の底面の直径82#の円錐台状中空容器を示し、該
容器(1)の一方の直径130 mm底面を均熱面(2
)、使方の直径82InInの底面を加熱源取付面(3
)とする。均熱面(2)の容器(1)の内側には作動液
凝縮及び下方への)商下をうながすために底面の一辺が
188、高さが5mの四角錐状突起(4)を稠密に設け
、これにより凝縮液が面の局所にかたよったり、あるい
は外周部に液だまりを形成するのを防止する。A truncated conical hollow container with a diameter of 82 mm on the other bottom surface is shown, and one bottom surface of the container (1) with a diameter of 130 mm is placed on a soaking surface (2
), attach the bottom of the 82InIn diameter to the heating source mounting surface (3
). Inside the container (1) on the soaking surface (2), square pyramid-shaped protrusions (4) with a side of 188 cm and a height of 5 m on the bottom are densely arranged to encourage condensation of the working fluid and downward flow of the fluid. This prevents the condensate from being concentrated locally on the surface or from forming pools on the outer periphery.
均熱面(2)と加熱源取付面(3)、即ち容器の両底面
間に、均熱面(2)の内圧上昇による歪を防止する支柱
(5)を設け、加熱源取付面(3)にはヒータ取付けの
ためのポルl〜(6)を設ける。Between the heating source mounting surface (3), that is, the bottom surfaces of the container, a strut (5) is provided to prevent the heating surface (2) from being distorted due to an increase in internal pressure. ) are provided with ports I to (6) for attaching the heater.
また中空容器(1)には作動液注入及び真空封じ切り円
管(7)を取付け、内部を真空引きしてナフタレンを封
入し、加熱源取付面(3)にヒータを取付け、ガリウム
ーヒ素半導体ウェハーの均熱台を作成した。In addition, a working fluid injection and vacuum sealing tube (7) is attached to the hollow container (1), the inside is evacuated and naphthalene is sealed, a heater is attached to the heat source mounting surface (3), and a gallium-arsenide semiconductor wafer is I made a soaking table.
これについて均熱台の温度を200℃以上に設定し、均
熱面の温度分布を調べた。その結果均熱面の温度分布は
±1℃以内におさえることができた。尚比較のため均熱
面の容器内側に突起を形成しない同一大きざの均熱台を
作成し、同様にして均熱面の温度分布を調べた。その結
果均熱面の容器内側に突起を形成しない均熱台の温度分
布は±10’Cであった。Regarding this, the temperature of the soaking table was set to 200° C. or higher, and the temperature distribution on the soaking surface was examined. As a result, the temperature distribution on the heating surface could be kept within ±1°C. For comparison, a soaking table of the same size without any projections formed on the inside of the container on the heating surface was prepared, and the temperature distribution on the heating surface was similarly investigated. As a result, the temperature distribution of the soaking table with no protrusions formed on the inside of the container on the soaking surface was ±10'C.
このように本発明均熱台によれば、ガリウムーヒ素半導
体ウェハーの検査評価工程等において被検査体を±1℃
という高精度の均熱が可能となり、ガリウムーヒ素半導
体ウェハーの品質向上に大きく寄与することができる等
工業上顕著な効果を秦するものである。As described above, according to the soaking table of the present invention, the temperature of the object to be inspected is ±1°C in the inspection and evaluation process of gallium-arsenide semiconductor wafers, etc.
This method enables highly accurate soaking and greatly contributes to improving the quality of gallium-arsenide semiconductor wafers, which has significant industrial effects.
第1図は本発明均熱台の一実施例を示す側断面図、第2
図は第1図のA−A’線における断面図である。
(1)台状容器 (2)均熱面
(3)加熱源取付面 (4)四角鉗状突起(5)支柱
(6)ボルト
(7)真空封じ切り管Fig. 1 is a side sectional view showing one embodiment of the soaking table of the present invention;
The figure is a sectional view taken along the line AA' in FIG. 1. (1) Table-shaped container (2) Heating surface (3) Heating source mounting surface (4) Square hook-shaped projection (5) Support column (6) Bolt (7) Vacuum sealed tube
Claims (6)
によりヒートパイプ化し、該容器の両底面の何れか一方
を作動液凝縮面として均熱を行なわせる台において、凝
縮面の容器内側に角錐又は円錐状の突起を面全体に稠密
に設けたことを特徴とするヒートパイプ式均熱台。(1) A heat pipe is created by evacuating the inside of a table-shaped container and sealing the working fluid, and on a table where one of the bottoms of the container is used as a condensing surface for the working fluid to uniformly heat the container, the container is placed on the condensing surface. A heat pipe type soaking table characterized by having pyramidal or conical projections densely provided on the inside of the entire surface.
る特許請求の範囲第1項記載のヒートパイプ式均熱台。(2) The heat pipe type soaking table according to claim 1, in which a truncated pyramid or truncated cone shaped container is used as the truncated container.
の底面の一辺の長さを2〜20mm、高さを2〜20m
mとする特許請求の範囲第1項又は第2項記載のヒート
パイプ式均熱台。(3) The shape of the protrusion on the condensation surface is a square pyramid or triangular pyramid, and the length of one side of the base is 2 to 20 mm and the height is 2 to 20 m.
A heat pipe type soaking stand according to claim 1 or 2, wherein m is defined as claim 1 or 2.
る特許請求の範囲第1項、第2項又は第3項記載のヒー
トパイプ式均熱台。(4) The heat pipe type soaking table according to claim 1, 2, or 3, wherein the area of the working fluid condensation surface is 20 to 600 cm^2.
項、第2項、第3項又は第4項記載のヒートパイプ式均
熱台。(5) Claim 1 in which naphthalene is used as the working fluid
The heat pipe type soaking table according to item 1, 2, 3, or 4.
る凝縮面の変形を防止する支持柱を設ける特許請求の範
囲第1項、第2項、第3項、第4項又は第5項記載のヒ
ートパイプ式均熱台。(6) Claims 1, 2, 3, and 4 in which a support column is provided between the condensation surface and the other bottom surface in the container to prevent deformation of the condensation surface due to thermal strain. Or the heat pipe type soaking table described in item 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10416387A JPH071775B2 (en) | 1987-04-27 | 1987-04-27 | Heat pipe type heat equalizer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10416387A JPH071775B2 (en) | 1987-04-27 | 1987-04-27 | Heat pipe type heat equalizer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63269543A true JPS63269543A (en) | 1988-11-07 |
JPH071775B2 JPH071775B2 (en) | 1995-01-11 |
Family
ID=14373386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10416387A Expired - Lifetime JPH071775B2 (en) | 1987-04-27 | 1987-04-27 | Heat pipe type heat equalizer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH071775B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0550372U (en) * | 1991-12-05 | 1993-07-02 | 株式会社アドバンテスト | Constant temperature chamber, constant temperature chamber temperature control system and heat transfer plate |
JPH09210582A (en) * | 1995-12-01 | 1997-08-12 | Fujikura Ltd | Heat pipe |
-
1987
- 1987-04-27 JP JP10416387A patent/JPH071775B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0550372U (en) * | 1991-12-05 | 1993-07-02 | 株式会社アドバンテスト | Constant temperature chamber, constant temperature chamber temperature control system and heat transfer plate |
JPH09210582A (en) * | 1995-12-01 | 1997-08-12 | Fujikura Ltd | Heat pipe |
Also Published As
Publication number | Publication date |
---|---|
JPH071775B2 (en) | 1995-01-11 |
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