JPS63269104A - Reflector - Google Patents
ReflectorInfo
- Publication number
- JPS63269104A JPS63269104A JP62105543A JP10554387A JPS63269104A JP S63269104 A JPS63269104 A JP S63269104A JP 62105543 A JP62105543 A JP 62105543A JP 10554387 A JP10554387 A JP 10554387A JP S63269104 A JPS63269104 A JP S63269104A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diamond
- depositing
- reflector
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 claims abstract description 25
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011651 chromium Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 abstract description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 4
- 229910000423 chromium oxide Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 238000010521 absorption reaction Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、照明器具などにおいて、熱線反射を少なくし
た反射体にＩ！ｌする。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention provides an I! I do it.
（従来の伎術）
店舗などにおいて、反射体を用いて、売場やフロアなど
を照明する照明ｒｈ具には、ランプから放射される熱線
が可視光線とともに反射してＰ’を射されるので、熱ｌ
ｉｔ、：よって商品を変色や変形させたりするおそれが
あるものがある。そこで、例えば、実ＤＩ Ｗ；Ｊ ５
０−６１８５４１’４ 公Ｗａ ニ２１ ’６ ｎ Ｔ
いるように、基体金属の表面にガラス質コーティングに
よる赤外線吸収層を形成し、この赤外線吸収層の表面に
赤外線を透過する干渉コーティング層を形成し、被照射
面に照射される光線から熱線をなるべく除去するように
した反射体が提案されている。(Traditional Kijutsu) In stores, etc., rh lighting equipment uses reflectors to illuminate sales floors and floors, as the heat rays emitted from the lamps are reflected along with visible light and emit P'. fever l
It: Therefore, there are some products that may discolor or deform the product. So, for example, real DI W; J 5
0-618541'4 public Wa 21 '6 n T
As shown in the figure, an infrared absorbing layer is formed using a glassy coating on the surface of the base metal, and an interference coating layer that transmits infrared rays is formed on the surface of this infrared absorbing layer, thereby minimizing heat rays from the light rays irradiated on the irradiated surface. Reflectors have been proposed that remove the
（発明が解決しようとする問題Ｉ：、ｉ ）上記実開昭
５０−６１８５４丹公報に示される基体金属の表面にガ
ラス質コーティング層の赤外線吸収層を形成しな反射体
では、いずれも赤外線吸収層の主組成の金属酸化物、金
属炭化物の熱伝導率が低いため、赤外線の吸収率が低く
、反ｑ（光の温度を十分に低くできない問題を有してい
た。(Problem I to be Solved by the Invention: i) In the reflector shown in the above-mentioned Utility Model Application Publication No. 50-61854, in which an infrared absorbing layer of a glassy coating layer is formed on the surface of a base metal, none of the reflectors have an infrared absorbing layer. Since the thermal conductivity of the metal oxide and metal carbide, which are the main components of the layer, is low, the absorption rate of infrared rays is low, and there was a problem that the temperature of light could not be lowered sufficiently.
本発明は上記問題点に鑑みなされたもので、基体とこの
基体の表面に対設した赤外線透過性反射層との間に熱伝
導率の良い赤外線吸収層としてダイヤモンド層を介在さ
せ、赤外線の吸収効果を高め、赤外線の反射が少ない反
射体を提供づることを目的とするものである。The present invention was made in view of the above-mentioned problems, and includes a diamond layer as an infrared absorbing layer with good thermal conductivity interposed between a base and an infrared transparent reflective layer provided on the surface of the base to absorb infrared rays. The purpose is to provide a reflector that increases the effectiveness and reflects less infrared rays.
（ｆＫ１題点を解決するための手段）
本発明の反（ト）体は、金属、ガラス、合成樹脂または
セラミックなどの基体と、この基体の表面に対設された
赤外ｌｓ透過性反射層と、前記基体と赤外ね透過性反射
層との闇に介在した赤外線吸収層としてダイ）７モンド
層とを具備したことを特徴とするものである。(Means for Solving Problem fK1) The antibody of the present invention comprises a substrate made of metal, glass, synthetic resin, ceramic, etc., and an infrared ls transmissive reflective layer provided oppositely on the surface of the substrate. and an infrared absorbing layer interposed between the substrate and the infrared transmitting reflective layer.
（作用）
本発明の反射体は、基体と赤外Ｉ！Ｊ透過性反射層との
間に形成された熱伝導率の高いダイヤモンド層にて赤外
線透過性反ｔＪ４膚を透過した赤外線が吸収され、ダイ
ヤモンド層は熱伝導率が高いため、赤外線の吸収率が高
く、照射面への赤外線の反射が低下される。(Function) The reflector of the present invention has an infrared I! The diamond layer with high thermal conductivity formed between the J4 transparent reflective layer absorbs the infrared rays that have passed through the skin. This reduces the reflection of infrared rays onto the irradiated surface.
（実施例）
本発明の反射体の一実施例の構°成を図面について説明
する。(Example) The configuration of an example of the reflector of the present invention will be described with reference to the drawings.
１はアルミニューム板、鉄などの金属、ガラス、合成樹
脂またはセラミックなどにて例えば回転二次曲面体に成
型された基体で、この基体１の一方の反射面となる表面
には前記基体１の熱膨張率より低い熱膨張率のアルマイ
ト（＾１０３）、クロム（Ｃ「）または酸化チタン（Ｔ
ｉＯｘ）などの熱膨張率差吸収層２を蒸着形成する。そ
してこの熱膨張率差吸収層２の表面にこの熱膨張率より
低い熱心服率の黒色ダイヤモンド層３を蒸着形成する。Reference numeral 1 denotes a base made of a metal such as an aluminum plate, iron, glass, synthetic resin, or ceramic, for example, and molded into a rotating quadratic curved body, and one of the surfaces of the base 1 that becomes a reflective surface is coated with the base 1. Alumite (^103), chromium (C'') or titanium oxide (T
A thermal expansion coefficient difference absorbing layer 2 such as iOx) is formed by vapor deposition. Then, on the surface of this thermal expansion coefficient difference absorbing layer 2, a black diamond layer 3 having a hard wearing rate lower than this thermal expansion coefficient is formed by vapor deposition.
このこのダイアモンドｌｉ！３の厚みは１乃至１０μ程
度好ましくは１乃至３μとし、多結晶のダイアモンドが
好ましい。そしてこのダイヤモンド層３の表面に前記基
体１の表面に対設して赤外線透過性反射層４を薄着形成
する。この赤外線通３！性反射層４は、例えばふつ化マ
グネシウム（ＨＯＦ２ ）と二酸化けい素（ＳｉＯｚ）
とを交互に蒸着積層しまたは二酸化チタン（ＴｉＯｚ）
と二酸化けい素（ＳｉＯｚ）とを交互に蒸＠積層する工
程により透明な１０乃至２０層程度の多層膜（て形成す
る。This diamond li! The thickness of 3 is about 1 to 10 μm, preferably 1 to 3 μm, and polycrystalline diamond is preferable. Then, an infrared-transmissive reflective layer 4 is thinly formed on the surface of this diamond layer 3 so as to be opposite to the surface of the base 1 . This infrared expert 3! The reflective layer 4 is made of, for example, magnesium fluoride (HOF2) and silicon dioxide (SiOz).
or titanium dioxide (TiOz)
A transparent multilayer film of about 10 to 20 layers is formed by a process of alternately vaporizing and laminating silicon dioxide (SiOz) and silicon dioxide (SiOz).
次にこの実施例の作用を説明する。Next, the operation of this embodiment will be explained.
図示しない光源から反射体５に入射された光の内、可視
光は多層膜の赤外線透過性反射層４にて反射されて出射
され、赤外線は藻体１の赤外線吸収層となる熱伝導率の
高いダイヤモンド１９３にて吸収され、赤外線はほとん
ど反射されることなく、熱線置割が少なく、反射光は低
温となり、また基体１のダイヤモンドに！１３にて吸収
された赤外線は基体１に熱伝導され、さらにこの基体１
から放熱され、基体１の温度上界は低くなる。そして例
えば照明器具の反射体として用いた場合、ランプの点灯
、消灯の反復による反射体５の湿度変化が生じても球体
１とダイヤモンド層３との囚に形成した熱Ｉ！！服率差
吸収層２は、基体１の熱膨張率とダイヤモンドＶＭ３の
熱膨張率との略中間の熱膨張率を有しているため、基体
１の熱ＩＥｉｆｆｉ率とダイヤ（ンド層３の熱１１ｒ＆
率との差が吸収され、ダイヤモンドｌ！ｉ３が雄体１か
ら剥離することがない。Of the light incident on the reflector 5 from a light source (not shown), visible light is reflected by the multilayer infrared-transmissive reflective layer 4 and emitted, while infrared rays become the infrared absorbing layer of the algal body 1 due to its thermal conductivity. It is absorbed by the high diamond 193, almost no infrared rays are reflected, there is little heat ray separation, the reflected light is at a low temperature, and the diamond of the base 1! The infrared rays absorbed by 13 are thermally conducted to the base 1, and further
As a result, the upper temperature limit of the base 1 becomes lower. For example, when used as a reflector in a lighting device, even if the humidity of the reflector 5 changes due to repeated turning on and off of the lamp, the heat I formed between the sphere 1 and the diamond layer 3! ! Since the capacitance difference absorption layer 2 has a coefficient of thermal expansion approximately intermediate between that of the substrate 1 and that of the diamond VM3, the thermal expansion coefficient of the substrate 1 and the thermal expansion coefficient of the diamond layer 3 are 11r&
The difference in rate is absorbed and Diamond l! i3 does not separate from male body 1.
なお前記ダイヤモンド層３と赤外１５１透過性反ｒＪ４
層４との間に可視九反１１４ＷＡまたは透明保護層など
を介在させることもできる。Note that the diamond layer 3 and the infrared 151 transmittance anti-rJ4
A transparent protective layer or the like may be interposed between the layer 4 and the layer 4.
また熱膨張率差吸収層２は基体１とダイヤモンド層３と
の熱膨張率の差が少ないときには必ずしも必要ではない
。Further, the thermal expansion coefficient difference absorbing layer 2 is not necessarily required when the difference in thermal expansion coefficient between the base body 1 and the diamond layer 3 is small.
次に：加配ダイヤモンド層と従来凡く赤外線吸収層とし
て用いられていた炭化けい素（ＳｉＣ）と炭化チタン（
ＴｉＣ）との熱伝導率を対比する。Next: the additive diamond layer and the silicon carbide (SiC) and titanium carbide (SiC) conventionally used as the infrared absorbing layer.
Compare the thermal conductivity with TiC).
ダイヤモンドの熱伝導率は５．０Ｃａｌ／ｃａｓｅｃ
”Ｃであり、炭化けい素（ＳｉＣ）の熱伝導率は０．２
Ｃａｌ ／ａａｓｔ３ｃ ’Ｃで、また炭化チタン（Ｔ
ｉＣ）の熱伝導率はｏ、ｏａｃａｌ、／ ａｓ Ｓｅｃ
″Ｃぐあり、ダイヤモンドは炭化けい素（ＳｉＣ）の約
２５倍の熱伝導率を有し、ダイヤモンド１１１３におけ
る赤外線の吸収率が従来の反射体より大幅に向上する。The thermal conductivity of diamond is 5.0 Cal/casec
"C, and the thermal conductivity of silicon carbide (SiC) is 0.2
Cal/aast3c 'C, and titanium carbide (T
The thermal conductivity of iC) is o, oacal, / as Sec
Diamond has a thermal conductivity approximately 25 times higher than silicon carbide (SiC), and the absorption rate of infrared rays in Diamond 1113 is significantly improved compared to conventional reflectors.
（発明の効果〕
本発明によれば、基体とこの基体の表面に対設された赤
外線透過性反射層との間に、ダイヤモンド層を介在させ
たので、赤外線透過性反射層を透過した赤外線は熱伝導
率の高い赤外線吸収層としてのダイヤモンド層にて大幅
に吸収され、赤外線の吸収率が向上し、赤外線の反射が
少ない反射体が得られる。(Effects of the Invention) According to the present invention, since the diamond layer is interposed between the base and the infrared transmitting reflective layer provided oppositely on the surface of the base, the infrared rays transmitted through the infrared transmitting reflective layer are The diamond layer, which serves as an infrared absorbing layer with high thermal conductivity, absorbs the infrared rays to a large extent, improving the absorption rate of infrared rays and providing a reflector that reflects less infrared rays.
第１図は本発明の・一実施例を示す反射体の−部の拡大
断面図、第２図は同、１：反射体の断面図である。
１・・基体、３・・ダイヤモンド層、４・・赤外線透過
上反射層。FIG. 1 is an enlarged cross-sectional view of the minus part of a reflector showing one embodiment of the present invention, and FIG. 2 is a cross-sectional view of the same reflector. 1. Base body, 3. Diamond layer, 4. Infrared transmission and reflection layer.
Claims (1)
層と、前記基体と赤外線透過性反射層との間に介在した
ダイヤモンド層とを具備したことを特徴とする反射体。(1) A reflector comprising a base, an infrared-transparent reflective layer provided opposite to the base, and a diamond layer interposed between the base and the infrared-transparent reflective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62105543A JPS63269104A (en) | 1987-04-28 | 1987-04-28 | Reflector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62105543A JPS63269104A (en) | 1987-04-28 | 1987-04-28 | Reflector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63269104A true JPS63269104A (en) | 1988-11-07 |
Family
ID=14410499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62105543A Pending JPS63269104A (en) | 1987-04-28 | 1987-04-28 | Reflector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63269104A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH036601U (en) * | 1989-06-05 | 1991-01-23 | ||
| WO2005043234A1 (en) * | 2003-10-31 | 2005-05-12 | Sharp Kabushiki Kaisha | Reflector, light source device, and projection type display unit |
| CN112713499A (en) * | 2020-12-30 | 2021-04-27 | 武汉光谷航天三江激光产业技术研究院有限公司 | Optical element heat dissipation device and method |
-
1987
- 1987-04-28 JP JP62105543A patent/JPS63269104A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH036601U (en) * | 1989-06-05 | 1991-01-23 | ||
| JPH0538322Y2 (en) * | 1989-06-05 | 1993-09-28 | ||
| WO2005043234A1 (en) * | 2003-10-31 | 2005-05-12 | Sharp Kabushiki Kaisha | Reflector, light source device, and projection type display unit |
| KR100765658B1 (en) * | 2003-10-31 | 2007-10-10 | 샤프 가부시키가이샤 | Reflector, light source device and projection display apparatus |
| CN112713499A (en) * | 2020-12-30 | 2021-04-27 | 武汉光谷航天三江激光产业技术研究院有限公司 | Optical element heat dissipation device and method |
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