JPS63266063A - Ito film formation - Google Patents
Ito film formationInfo
- Publication number
- JPS63266063A JPS63266063A JP10089787A JP10089787A JPS63266063A JP S63266063 A JPS63266063 A JP S63266063A JP 10089787 A JP10089787 A JP 10089787A JP 10089787 A JP10089787 A JP 10089787A JP S63266063 A JPS63266063 A JP S63266063A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sputtering
- ito film
- chamber
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 abstract description 15
- 238000007254 oxidation reaction Methods 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 24
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は低抵抗のＩ Ｔｏ （Ｉｎｄｉｕｍ−Ｔｉｎ
−０ｘｉｄｅ）膜作成方法に関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention is directed to low resistance I To (Indium-Tin).
-Oxide) This relates to a method for producing a film.
く従来の技術〉
従来、低抵抗（７）ＩＴＯ膜（膜厚１０００−１５００
＾。Conventional technology> Conventionally, low resistance (7) ITO film (thickness 1000-1500
^.
面抵抗θ〜４０Ω／６Ｉ）は、真空蒸着法、電子ビーム
蒸着法あるいはスパッタリング法により作成されてきた
。The sheet resistance θ~40Ω/6I) has been produced by vacuum evaporation, electron beam evaporation, or sputtering.
後者のスパッタリング法は大別すると次の２種類になる
。The latter sputtering method can be roughly divided into the following two types.
（１）金属ターゲラ） （Ｉｎ／Ｓｎ）の反応性スパッ
ターアニール
（２）酸化物ターゲラ）（ＩＴＯ）のスパッタ→アニー
ル
（１）の反応性スパッタによる方法を第２図に示す。(1) Reactive sputter annealing of metal targeter (In/Sn) (2) Sputtering of oxide targeter (ITO)→Annealing (1) A method of reactive sputtering is shown in FIG.
チャンバー１の中にＩｎ／Ｓｎの金属ターゲット２が配
置され、基板３は矢印ように送り込まれる。An In/Sn metal target 2 is placed in a chamber 1, and a substrate 3 is fed in as shown by the arrow.
チャンバー１内の反応ガス４はＡｒと０□の混合ガスか
らなり、その比はＡｒ：０２＝９０＝１０程度であるＯ
〈発明が解決しょうとする問題点〉
スパッタリング法による（１）の欠点は、Ｉｎの酸素親
和力が太きいため、スパッタ中に金属ターゲット表面が
酸化し、成膜の膜質が変化することである。（２）の欠
点は、膜質が安定であるが、酸化物ターゲットを出発材
とするため、ターゲット価格が高くなること（金属ター
ゲットの約２倍）、及び、反応性スパッタを行わないた
めに成膜の酸化度が固定されてしまい、種々の特性膜に
容易に対応できないことである。The reaction gas 4 in the chamber 1 consists of a mixed gas of Ar and 0□, and the ratio is about Ar:02=90=10.<Problems to be solved by the invention> Disadvantages of (1) due to sputtering method The problem is that since the oxygen affinity of In is strong, the surface of the metal target is oxidized during sputtering, and the quality of the film formed changes. The disadvantages of (2) are that although the film quality is stable, the price of the target is high because it uses an oxide target as a starting material (approximately twice that of a metal target), and because reactive sputtering is not performed, The oxidation degree of the film is fixed, and it is not possible to easily adapt to films with various characteristics.
本発明は、スパッタリング法によるＩＴＯ作成方法に係
り、安価なターゲットで、膜質が安定し、かつ成膜の酸
化度も容易に制御し得る作成方法？提供するものである
０
く問題点を解決するための手段〉
Ｉｎ／Ｓｎの金属ターゲラ）ｋ用い、スパッタによりＩ
ｎ／Ｓｎの金属膜を形成する工程、酸素ラジカル法によ
り前記金属膜を酸化する工程とを有し、前記二工程を複
数回繰り返すことを特徴とする０く作用〉
上記方法によれば、スパッタ中に金属ターゲットが酸化
されることがなく、また酸化度は次工程の酸素ガスの導
入程度（真空度）にエフ容易に制御できる。The present invention relates to a method for producing ITO using a sputtering method, which uses an inexpensive target, has stable film quality, and can easily control the degree of oxidation of the film. [Means for solving the problems] Using an In/Sn metal target layer, I
According to the above method, the method comprises a step of forming a metal film of n/Sn, and a step of oxidizing the metal film by an oxygen radical method, and repeating the two steps a plurality of times. The metal target is not oxidized during the process, and the degree of oxidation can be easily controlled to the degree of introduction of oxygen gas (degree of vacuum) in the next step.
〈実施例〉
第１図に本発明の一実施例を示す０
チヤンバー１はゲート５にニジ成膜室６と酸化室７に仕
切られ、成膜室６にはＩｎ／Ｓｎの金属ターゲット２が
、また酸化室７には酸素ラジカル噴射装置８が配置され
ている。ここで、金属ターゲット２はＩｎ：５ｎ＝９０
：１０（ｗｔ比）であり、成膜室６のスパッタガス９は
Ａｒ１００％で、成膜速度は１００ＯＡ／分程度である
。<Embodiment> FIG. 1 shows an embodiment of the present invention. A chamber 1 is partitioned into a film forming chamber 6 and an oxidizing chamber 7 by a gate 5, and an In/Sn metal target 2 is placed in the film forming chamber 6. Further, an oxygen radical injection device 8 is arranged in the oxidation chamber 7. Here, the metal target 2 is In:5n=90
:10 (wt ratio), the sputtering gas 9 in the film forming chamber 6 is 100% Ar, and the film forming rate is about 100 OA/min.
まず、成膜室６において、スパッタにエフ基板ａ上にＩ
ｎ／Ｓｎの金属層Ｔｈ３００Ａ生成する。次に基板３を
酸化室７に移動してラジカル酸化法により金属層を酸化
して３００ＡのＩＴＯ膜を形成する。First, in the film forming chamber 6, an I film is applied onto the F substrate a by sputtering.
A metal layer Th300A of n/Sn is generated. Next, the substrate 3 is moved to the oxidation chamber 7, and the metal layer is oxidized by a radical oxidation method to form an ITO film of 300A.
次に再び成膜室６に移動し金属膜を積層し、また酸化室
７−に移動して酸化する０これを所望回繰り返す０１回
の成膜・酸化工程では３００Ａ／回であり、１２０ＯＡ
の薄膜の場合であれば４回繰り返えされる。そして最後
にアニールを施す。Next, the metal film is laminated again in the film formation chamber 6, and is oxidized again in the oxidation chamber 7-.This process is repeated as many times as desired.In the first film formation and oxidation process, the flow rate is 300A/time, and 120OA
In the case of a thin film, the process is repeated four times. Finally, annealing is performed.
酸素ラジカル分子ｉｊ、ｌＸｌ０−”Ｔｏｒｒ程度中の
酸素ガスに、１２０ｎｍの発光ピークを有するＵＶラン
プを照射することに工っで生成され、酸化室７の噴射装
置８により噴射される０３０ＯＡ程度のスパッタ膜はこ
のラジカル化された酸素と速やかに反応する。酸化程度
は酸素ガスの導入速度で制御できる。Oxygen radical molecules ij, lXl0-'' are generated by irradiating oxygen gas with a UV lamp having an emission peak of 120 nm, and spatter of about 0.030 OA is injected by the injection device 8 in the oxidation chamber 7. The membrane reacts quickly with this radicalized oxygen.The degree of oxidation can be controlled by the rate of introduction of oxygen gas.
なお、ｌＸｌ０−２Ｔｏｒｒ程度まで酸化室７に酸素ガ
スを導入し、ここで１２０ｎｍの発光ピークを有するＵ
Ｖランプを照射し酸素ラジカルを生成しておいてもよい
。酸化度は真空度にエフ制御できる。Note that oxygen gas is introduced into the oxidation chamber 7 to a temperature of about lXl0-2 Torr, and here U
Oxygen radicals may be generated by irradiation with a V lamp. The degree of oxidation can be controlled by the degree of vacuum.
上記方法により、膜厚１２０ＯＡ、面抵抗３０Ω／−１
透過率８６％（ａｔ５５０ｎｍのガラス込み）の低抵抗
ＩＴＯ膜が再現性よく容易に作成できた〇〈発明の効果
〉
以上のように本発明に工れば、安価で酸化度の制御も容
易である有用なＩＴＯ膜作成方法が提供できる。By the above method, a film thickness of 120OA and a sheet resistance of 30Ω/-1 were obtained.
A low-resistance ITO film with a transmittance of 86% (at 550 nm glass included) was easily created with good reproducibility.〇<Effects of the Invention> As described above, if the present invention is used, the oxidation degree can be easily controlled at low cost. A useful method for producing an ITO film can be provided.
第１図は本発明の一実施例を示す概略図、第２図は従来
例を示す概略図である。
１・・・チャンバー、２・・・金属ターゲット、３・・
・基板、５・・・ゲート、６・・・成膜室、７・・・酸
化室、８・・・酸素ラジカル噴射装置。
代理人 弁理士 杉 山 毅 至 （他！名）第１図
第２図FIG. 1 is a schematic diagram showing an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a conventional example. 1...Chamber, 2...Metal target, 3...
- Substrate, 5... Gate, 6... Film forming chamber, 7... Oxidation chamber, 8... Oxygen radical injection device. Agent: Patent attorney Takeshi Sugiyama (and others!) Figure 1 Figure 2
Claims (1)
りＩｎ／Ｓｎの金属膜を形成する工程と、酸素ラジカル
法により前記金属膜を酸化する工程とを有し、前記二工
程を複数回繰り返すことを特徴とするＩＴＯ膜作成方法
。1. A process of forming an In/Sn metal film by sputtering using an In/Sn metal target, and a process of oxidizing the metal film by an oxygen radical method, and repeating the two steps multiple times. Characteristic ITO film production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10089787A JPS63266063A (en) | 1987-04-23 | 1987-04-23 | Ito film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10089787A JPS63266063A (en) | 1987-04-23 | 1987-04-23 | Ito film formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63266063A true JPS63266063A (en) | 1988-11-02 |
Family
ID=14286131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10089787A Pending JPS63266063A (en) | 1987-04-23 | 1987-04-23 | Ito film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63266063A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005276689A (en) * | 2004-03-25 | 2005-10-06 | Tadahiro Omi | Manufacturing method for organic electroluminescent element, forming method for electrode or wiring containing conductive oxide film, manufacturing method for electronic apparatus, organic electroluminescent element, and electronic apparatus |
| US8421061B2 (en) | 2006-03-10 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device including the memory element |
| US8664035B2 (en) * | 2006-07-28 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device |
-
1987
- 1987-04-23 JP JP10089787A patent/JPS63266063A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005276689A (en) * | 2004-03-25 | 2005-10-06 | Tadahiro Omi | Manufacturing method for organic electroluminescent element, forming method for electrode or wiring containing conductive oxide film, manufacturing method for electronic apparatus, organic electroluminescent element, and electronic apparatus |
| US8421061B2 (en) | 2006-03-10 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device including the memory element |
| US8664035B2 (en) * | 2006-07-28 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device |
| TWI493692B (en) * | 2006-07-28 | 2015-07-21 | Semiconductor Energy Lab | Memory element and semiconductor device |
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