JPS6326551B2 - - Google Patents

Info

Publication number
JPS6326551B2
JPS6326551B2 JP55150546A JP15054680A JPS6326551B2 JP S6326551 B2 JPS6326551 B2 JP S6326551B2 JP 55150546 A JP55150546 A JP 55150546A JP 15054680 A JP15054680 A JP 15054680A JP S6326551 B2 JPS6326551 B2 JP S6326551B2
Authority
JP
Japan
Prior art keywords
region
diffusion
diffusion region
conductivity type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55150546A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5773932A (en
Inventor
Akimitsu Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP55150546A priority Critical patent/JPS5773932A/ja
Publication of JPS5773932A publication Critical patent/JPS5773932A/ja
Publication of JPS6326551B2 publication Critical patent/JPS6326551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
JP55150546A 1980-10-27 1980-10-27 High tension-resisting planer-type semiconductor device Granted JPS5773932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150546A JPS5773932A (en) 1980-10-27 1980-10-27 High tension-resisting planer-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150546A JPS5773932A (en) 1980-10-27 1980-10-27 High tension-resisting planer-type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5773932A JPS5773932A (en) 1982-05-08
JPS6326551B2 true JPS6326551B2 (enrdf_load_stackoverflow) 1988-05-30

Family

ID=15499232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150546A Granted JPS5773932A (en) 1980-10-27 1980-10-27 High tension-resisting planer-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5773932A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
DE10320414A1 (de) * 2003-05-07 2004-12-23 Infineon Technologies Ag Halbleiteranordnung mit Schutzanordnung zur Verhinderung einer Diffusion von Minoritätsladungsträgern

Also Published As

Publication number Publication date
JPS5773932A (en) 1982-05-08

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