JPS63252975A - Method of joining ceramic material to metal member - Google Patents
Method of joining ceramic material to metal memberInfo
- Publication number
- JPS63252975A JPS63252975A JP8770987A JP8770987A JPS63252975A JP S63252975 A JPS63252975 A JP S63252975A JP 8770987 A JP8770987 A JP 8770987A JP 8770987 A JP8770987 A JP 8770987A JP S63252975 A JPS63252975 A JP S63252975A
- Authority
- JP
- Japan
- Prior art keywords
- metal member
- ceramic material
- joining
- ceramic
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims description 39
- 229910052751 metal Inorganic materials 0.000 title claims description 39
- 229910010293 ceramic material Inorganic materials 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 16
- 238000005304 joining Methods 0.000 title claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 5
- 230000005496 eutectics Effects 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 description 13
- 239000002131 composite material Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000008646 thermal stress Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はセラミックス材と金属部材との接合方法に関す
るものであって、特に従来よりも強固な接合強度が得ら
れ、かつ熱応力が生じにくい様な接合方法に関するもの
である。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for joining ceramic materials and metal members, and in particular, a method that provides stronger joining strength than conventional methods and is less likely to cause thermal stress. It relates to various joining methods.
電力用半導体素子等発熱量が大きな電子部品を実装する
放熱性電子回路基板として、ＡｌＮ、ＳｉＣ等の熱伝導
性が良好なセラミックス材と金属部材との複合材が最近
注目されている。然るにこれらのセラミックス材は一般
に金属部材との濡れ性が悪いため、Ｔｉ、Ｚｒ等の活性
金属の薄膜をセラミックス材上に形成し、該薄膜を介し
てセラミックス材及び金属部材を高温に加熱して接合す
る方法が通常行なわれている。BACKGROUND ART Composite materials of ceramic materials with good thermal conductivity such as AlN and SiC and metal members have recently been attracting attention as heat-dissipating electronic circuit boards on which electronic components such as power semiconductor devices that generate a large amount of heat are mounted. However, these ceramic materials generally have poor wettability with metal members, so a thin film of active metal such as Ti or Zr is formed on the ceramic material, and the ceramic material and the metal member are heated to a high temperature through the thin film. A method of joining is commonly used.
前記セラミックス材と金属部材との接合方法においては
、該セラミックスとＴｉ、Ｚｒ等の活性金属との界面に
、高強度で熱膨張係数が該セラミックスよりも大きな中
間相（セラミックスがＡ［Ｎの場合は、ＴｉＮ、ＺｒＮ
等）が形成されるため、
（１）接合後の冷却時に熱応力によって、セラミックス
材表面に微細なりラックが入りやすく、充分な接合強度
が得られない。In the method for joining a ceramic material and a metal member, an intermediate phase having high strength and a coefficient of thermal expansion larger than that of the ceramic (if the ceramic is A[N) is added to the interface between the ceramic and active metal such as Ti or Zr. is TiN, ZrN
(1) During cooling after bonding, fine racks tend to form on the surface of the ceramic material due to thermal stress, making it impossible to obtain sufficient bonding strength.
（２）電流のｏｎ←ｏｆｆ等により加熱、冷却のヒート
サイクルを受けた際に、熱応力により金属部材がセラミ
ックス材から剥離しやすい。(2) When subjected to a heat cycle of heating and cooling due to turning on and off of current, etc., the metal member tends to peel off from the ceramic material due to thermal stress.
等の問題を生じていた。This caused problems such as:
本発明は上記の点に鑑み鋭意検討の結果なされたもので
あって、その目的とするところは、従来よりも強固な接
合強度が得られ、かつ熱応力が生じにくい様なセラミッ
クス材と金属部材との接合方法を提供することである。The present invention has been made as a result of intensive studies in view of the above points, and its purpose is to provide a ceramic material and a metal member that have stronger bonding strength than before and that are less likely to cause thermal stress. The purpose of the present invention is to provide a method for joining the
即ち本発明は、セラミックス材に金属部材を接合するに
際して、前記セラミックス材と金属部材との間に活性金
属を不連続状態で介在させたのち該活性金属と金属部材
との共晶温度以上に加熱して接合することを特徴とする
セラミックス材と金属部材との接合方法である。That is, in the present invention, when joining a metal member to a ceramic material, an active metal is interposed in a discontinuous state between the ceramic material and the metal member, and then heated to a temperature higher than the eutectic temperature of the active metal and the metal member. This is a method of joining a ceramic material and a metal member, which is characterized by joining a ceramic material and a metal member.
本発明においてＴ ｉ、 Ｚｒ、 Ｈｆ、 Ｖ、 Ｎｂ
、Ｔａ等の活性金属をセラミックス材と金属部材との間
に不連続状態で介在させる手段としては、例えばステン
レス等の金網でセラミックス材表面をマスキングした後
、スパッタ法、蒸着法、イオンブレーティング法、ＣＶ
Ｄ法、ＩＶＤ法等の気相成長法により前記活性金属の薄
膜を形成させる方法を用いることが出来る。In the present invention, Ti, Zr, Hf, V, Nb
, Ta, etc. can be interposed discontinuously between the ceramic material and the metal member by, for example, masking the surface of the ceramic material with a wire mesh such as stainless steel, and then sputtering, vapor deposition, or ion blating. ,CV
A method of forming a thin film of the active metal by a vapor phase growth method such as the D method or the IVD method can be used.
又本発明に用いるセラミックスの種類は特に限定される
ものではなく、酸化物系、非酸化物系等いずれのセラミ
ックスを用いても差し支えないが、電子回路基板用とし
てはＡｌ２Ｏ３、ＡｌＮ、ＳｉＣ等を用いるのが望まし
い。Furthermore, the type of ceramics used in the present invention is not particularly limited, and any oxide-based or non-oxide-based ceramics may be used; however, for electronic circuit boards, Al2O3, AlN, SiC, etc. may be used. It is desirable to use
本発明においては、セラミックス材と金属部材とを、両
者間に不連続状態で介在する活性金属により接合してい
るので、両者を接合した後の冷却時並びに加熱冷却のヒ
ートサイクルな受けた際に熱応力を生じにくく、接合強
度が向上すると共に、ヒートサイクル時における金属部
材の耐剥離性も向上する。In the present invention, since the ceramic material and the metal member are joined by the active metal interposed in a discontinuous state between the two, the ceramic material and the metal member are joined together, so that the ceramic material and the metal member are joined together by the active metal interposed in a discontinuous state between the two. Thermal stress is less likely to occur, the bonding strength is improved, and the peeling resistance of the metal member during heat cycles is also improved.
〔実施例１〕 次に本発明を実施例により更に具体的に説明する。[Example 1] Next, the present invention will be explained in more detail with reference to Examples.
第１図に示す様に、１インチ角のＡＩＩＮ基板１上に１
００メツシユのステンレス金網２を配置してマスキング
を行ない、３ＸＩＯ−３ＴｏｒｒのＡｒ雰囲気中でＴｉ
ターゲット３によりスパッタリングし、厚さ約３μｍ
のＴｉ膜４を基盤目状に不連続に形成した。As shown in Figure 1, one
00 mesh stainless wire mesh 2 was placed for masking, and Ti was removed in an Ar atmosphere of 3XIO-3 Torr.
Sputtered with target 3, about 3μm thick
The Ti film 4 was formed discontinuously in the shape of a substrate.
しかる後前記Ａ［Ｎ基板上に厚さ０．３１ｍのＣｕ板を
置き、Ａ「ガス中で９００℃×３０分加熱して両者を接
合し、セラミックス複合材を得た。該セラミックス複合
材について、接合強度（ビール強度、Ｎ＝５）を測定す
ると共に、ヒートサイクル試験を行ない、その結果を本
発明例１として第１表に示した。尚ヒートサイクル試験
は、−４０℃Ｘ３０分→室温×１０分→１５０℃Ｘ３０
分→室温ＸＩＯ分を１サイクルとし、Ｃｕ板が剥離する
迄の繰返し回数を求めた。Thereafter, a Cu plate with a thickness of 0.31 m was placed on the A[N substrate, and the two were bonded by heating at 900°C for 30 minutes in A[N substrate to obtain a ceramic composite material.About the ceramic composite material] In addition to measuring the bonding strength (beer strength, N=5), a heat cycle test was also conducted, and the results are shown in Table 1 as Invention Example 1.The heat cycle test was carried out at -40°C for 30 minutes → room temperature. ×10 minutes → 150℃×30
One cycle was 1 minute → room temperature XIO minutes, and the number of repetitions until the Cu plate peeled off was determined.
〔実施例２〕
実施例１と同様、ｉＮ基板上に１００メツシユのステン
レス金網のメツシュを施し、スパッタ法により厚さ約３
μｍのＺｒ膜を不連続に形成した。しかる後前記ＡＩＩ
Ｎ基板上に厚さ０、３ 、、のＣｕ板を置き、Ａ「ガス
中で９５０℃Ｘ３０分加熱して両者を接合し、セラミッ
クス複合材を得た。該セラミックス複合材について、実
施例１と同様に接合強度を測定すると共に、ヒートサイ
クル試験を行ない、その結果を本発明例２として第１表
に併記した。[Example 2] As in Example 1, 100 meshes of stainless wire mesh were applied on the iN substrate, and the mesh was made to a thickness of about 3 mm by sputtering.
A micrometer-thick Zr film was formed discontinuously. After that, the AII
A Cu plate with a thickness of 0.3 mm was placed on the N substrate, and the two were bonded by heating at 950°C for 30 minutes in A gas to obtain a ceramic composite. Regarding the ceramic composite, Example 1 In addition to measuring the bonding strength in the same manner as above, a heat cycle test was also conducted, and the results are also listed in Table 1 as Invention Example 2.
〔実施例３〕
ＡＡＮ基板の表面に３００メツシユアンダーのＴｉ粉を
平均厚さ５０μｍに塗布し、真空中で１６００℃×３０
分加熱して、ＡＩＮ基板上にＴｉをメタライズした。こ
の上に厚さ０．３ ｍ、ＯＣｕ板を置き、Ａｒガス中で
１０００℃Ｘ３０分加熱して両者を接合し、セラミック
ス複合材を得た。該セラミックス複合材について、実施
例１と同様に接合強度を測定すると共に、ヒートサイク
ル試験を行ない、その結果を本発明例３として第１表に
併記した。[Example 3] Ti powder with an average thickness of 50 μm under 300 meshes was applied to the surface of an AAN substrate, and heated at 1600° C.
Then, Ti was metallized on the AIN substrate. An OCu plate with a thickness of 0.3 m was placed on top of this and heated in Ar gas at 1000°C for 30 minutes to bond them together to obtain a ceramic composite material. Regarding the ceramic composite material, the bonding strength was measured in the same manner as in Example 1, and a heat cycle test was also conducted, and the results are also listed in Table 1 as Invention Example 3.
〔従来例１〕
１インチ角のＡｌＮ基板上に、何らマスキングを施さず
に実施例１と同様な条件で、全面に厚さ３μｍのＴｉス
パッタ膜を形成した。この上に厚さ０．３ ｍＷのＣｕ
板を置き、Ａｒガス中でいて、実施例１と同様に接合強
度を測定すると共にヒートサイクル試験を行ない、その
結果を第１表に併記した。[Conventional Example 1] A Ti sputtered film with a thickness of 3 μm was formed on the entire surface of a 1-inch square AlN substrate under the same conditions as in Example 1 without any masking. On top of this is a Cu layer with a thickness of 0.3 mW.
The plate was placed and placed in Ar gas, and the bonding strength was measured and a heat cycle test was conducted in the same manner as in Example 1. The results are also listed in Table 1.
〔従来例２〕
１インチ角のＡ／Ｎ基板上に、厚さ５μｍのＴｉ箔を全
面に置いた後、この上に厚さ０．３ ｍｌのＣｕ板を置
き、Ａｒガス中で９５０℃×３０分加熱して両者を接合
し、セラミックス複合材を得た。該セラミックス複合材
について、実施例１と同様に接合強度を測定すると共に
ヒートサイクル試験を行ない、その結果を第１表に併記
した。[Conventional Example 2] After placing a 5 μm thick Ti foil on the entire surface of a 1 inch square A/N board, a 0.3 ml thick Cu plate was placed on top of this and heated at 950°C in Ar gas. The two were bonded together by heating for 30 minutes to obtain a ceramic composite material. Regarding the ceramic composite material, the bonding strength was measured and a heat cycle test was conducted in the same manner as in Example 1, and the results are also listed in Table 1.
第１表
第１表から明らかな様に、本発明例１〜３はいずれも従
来例１及び２に比べて接合強度が高く、かつヒートサイ
クル時における金属部材の耐剥離性が優れている。As is clear from Table 1, all of Examples 1 to 3 of the present invention have higher bonding strength than Conventional Examples 1 and 2, and are superior in peeling resistance of the metal member during heat cycling.
本発明の方法によれば、セラミックス材に金属部材を接
合した際に、従来よりも強固な接合強度が得られ、かつ
ヒートサイクル時における金属部材の耐剥離性も向上す
る等工業上顕著な効果を奏するものである。According to the method of the present invention, when a metal member is bonded to a ceramic material, a stronger bonding strength than before can be obtained, and the peeling resistance of the metal member during heat cycling is also improved, which is an industrially significant effect. It is something that plays.
第１図はマスキングによる活性金属スパッタリングの概
念図である。FIG. 1 is a conceptual diagram of active metal sputtering using masking.
Claims (3)
前記セラミックス材と金属部材との間に活性金属を不連
続状態で介在させたのち、該活性金属と金属部材との共
晶温度以上に加熱して接合することを特徴とするセラミ
ックス材と金属部材との接合方法。(1) When joining a metal member to a ceramic material,
A ceramic material and a metal member, characterized in that an active metal is interposed in a discontinuous state between the ceramic material and the metal member, and then the active metal and the metal member are joined by heating to a temperature higher than the eutectic temperature of the metal member. How to join with.
金属を不連続状態に介在させることを特徴とする特許請
求の範囲第一項記載のセラミックス材と金属部材との接
合方法。(2) A method for joining a ceramic material and a metal member according to claim 1, characterized in that the active metal is interposed in a discontinuous state by a vapor phase growth method using masking of a wire mesh.
Ｃの内のいずれか１種からなる回路基板であることを特
徴とする特許請求の範囲第１項記載のセラミックス材と
金属部材との接合方法。(3) Ceramic material is Al_2O_3, AlN, Si
2. The method of joining a ceramic material and a metal member according to claim 1, wherein the circuit board is made of any one of C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8770987A JPS63252975A (en) | 1987-04-09 | 1987-04-09 | Method of joining ceramic material to metal member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8770987A JPS63252975A (en) | 1987-04-09 | 1987-04-09 | Method of joining ceramic material to metal member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63252975A true JPS63252975A (en) | 1988-10-20 |
Family
ID=13922439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8770987A Pending JPS63252975A (en) | 1987-04-09 | 1987-04-09 | Method of joining ceramic material to metal member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63252975A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0477369A (en) * | 1990-07-16 | 1992-03-11 | Showa Denko Kk | Production of metal-ceramic laminated substrate |
| JP2020145335A (en) * | 2019-03-07 | 2020-09-10 | 株式会社Ｆｊコンポジット | Manufacturing method of circuit substrate |
-
1987
- 1987-04-09 JP JP8770987A patent/JPS63252975A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0477369A (en) * | 1990-07-16 | 1992-03-11 | Showa Denko Kk | Production of metal-ceramic laminated substrate |
| JP2020145335A (en) * | 2019-03-07 | 2020-09-10 | 株式会社Ｆｊコンポジット | Manufacturing method of circuit substrate |
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