JPS63252485A - Photosensor unit - Google Patents
Photosensor unitInfo
- Publication number
- JPS63252485A JPS63252485A JP61147068A JP14706886A JPS63252485A JP S63252485 A JPS63252485 A JP S63252485A JP 61147068 A JP61147068 A JP 61147068A JP 14706886 A JP14706886 A JP 14706886A JP S63252485 A JPS63252485 A JP S63252485A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- optical sensor
- sensor unit
- processing circuit
- signal processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000011810 insulating material Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000005022 packaging material Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 abstract description 13
- 229920005989 resin Polymers 0.000 abstract description 13
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 239000008267 milk Substances 0.000 abstract description 2
- 210000004080 milk Anatomy 0.000 abstract description 2
- 235000013336 milk Nutrition 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(技術分野)
本発明は光センサユニットに係り、特にフォトトランジ
スタの如き光センナを信号処理回路と一体化させた光セ
ンナユニットに関する。TECHNICAL FIELD The present invention relates to an optical sensor unit, and more particularly to an optical sensor unit in which an optical sensor such as a phototransistor is integrated with a signal processing circuit.
(従来技術)
従来よりフォトトランジスタの如き光電変換素子とこの
入出力信号処理回路を一体化した光センナユニットとし
て例えば第4図〜第7図のようなものが知られている。(Prior Art) Conventionally, optical sensor units such as those shown in FIGS. 4 to 7 have been known that integrate a photoelectric conversion element such as a phototransistor and an input/output signal processing circuit.
第4図は、発光素子と受光素子とを信号処理回路ととも
に一体化した光センサユニットの外観を示すもので、(
a)は正面図、(b)は底面図、(C)はA−入線断面
である。光センサユニットは略U字形状を呈し、対向壁
1.2には発光素子と受光素子とが対面して配せられ、
底面には5本の端子3.4゜5.6.7が突設されてい
る。光センナユニットは表面が絶縁材にて被覆され、図
示はしないが、発光素子と受光素子の発光窓部及び受光
窓部だけは透明な樹脂材にて被覆されている。Figure 4 shows the appearance of an optical sensor unit that integrates a light emitting element and a light receiving element together with a signal processing circuit.
(a) is a front view, (b) is a bottom view, and (C) is a cross section taken along line A. The optical sensor unit has a substantially U-shape, and a light emitting element and a light receiving element are disposed facing each other on the opposing wall 1.2.
Five terminals 3.4° 5.6.7 are protruding from the bottom. The surface of the optical sensor unit is coated with an insulating material, and although not shown, only the light-emitting and light-receiving windows of the light-emitting element and the light-receiving element are covered with a transparent resin material.
第5図は上記光センサユニットの内部構成を示しており
、発光素子8の7ノードが端子3、カソードが端子4に
それぞれ接続され、受光素子9はアンプ10.定電圧回
路11、トランジスタ12等からなる信号処理回路13
を介して、端子5(Vcc)、端子6(VO)、端子7
(GND)に接続されている。FIG. 5 shows the internal configuration of the optical sensor unit, in which seven nodes of the light emitting element 8 are connected to the terminal 3, the cathode is connected to the terminal 4, and the light receiving element 9 is connected to the amplifier 10. A signal processing circuit 13 consisting of a constant voltage circuit 11, a transistor 12, etc.
via terminal 5 (Vcc), terminal 6 (VO), terminal 7
(GND).
上記光センサユニットは、信号処理回路13を受光素子
9とともに1チツプのモノリシックに集積化し、しかも
この受光素子9に発光素子8を対向させ、画素子8,9
間を通過する物体を検出するようにしたため、出力電流
が大きくとれ、耐ノイズ性が向上する特徴があるが、透
過型で物体の有無、即ちデジタル的な検出にのみその使
用が限られる。またモノリシック構造であるため、大量
生産には好都合であるが、回路定数その他の部分変更を
行う多a類、少量生産九は制約が多く不向きである。The optical sensor unit has a signal processing circuit 13 monolithically integrated with a light receiving element 9 on one chip, a light emitting element 8 facing the light receiving element 9, and pixel elements 8, 9.
Since it detects objects passing through the sensor, it has the characteristics of a large output current and improved noise resistance, but it is a transmission type and its use is limited to digital detection of the presence or absence of an object. Furthermore, since it has a monolithic structure, it is convenient for mass production, but there are many restrictions and it is not suitable for class A and small volume production, where circuit constants and other parts are changed.
第6図は信号処理回路のアンプ部に混成厚膜(ハイブリ
ッド)技術を利用した透過散光センサユニットの外観を
示すもので、(a)は正面図、(b)は底面図、(C)
は側面図、(d)は上面図である。Figure 6 shows the external appearance of a transmitted diffused light sensor unit that uses hybrid thick film (hybrid) technology in the amplifier section of the signal processing circuit, (a) is a front view, (b) is a bottom view, and (C) is a front view.
is a side view, and (d) is a top view.
この光センサユニットは、上面に突出する対向部14.
15を有するケース16内に、混成厚膜による信号処理
回路基板(図示せず)を収納し、対向部には各々発光素
子8、受光素子9を配置し、ケース16外部に4本の端
子17〜20’i取り付けたもので、第7図に示すよう
な回路構成を有している。前記<S号処理回路13のア
ンプ部はハイブリッド化されているが、センナ部はディ
スクリート部品である。従ってモノリシック構造のもの
に比べ一部変更などを行う際の制約は少ないものの小型
化は不十分である。This optical sensor unit has a facing portion 14 that protrudes from the top surface.
A signal processing circuit board (not shown) made of a hybrid thick film is housed in a case 16 having a casing 15, a light emitting element 8 and a light receiving element 9 are respectively disposed in the opposing parts, and four terminals 17 are provided outside the case 16. ~20'i is installed, and has a circuit configuration as shown in FIG. The amplifier section of the <S number processing circuit 13 is a hybrid, but the senna section is a discrete component. Therefore, compared to monolithic structures, there are fewer restrictions when making partial changes, but miniaturization is insufficient.
(目的)
本発明は上記の点に鑑みてなされたもので、小型で高精
度、高信頼性の安価な光センサユニットの提供を目的と
している。(Objective) The present invention has been made in view of the above points, and an object of the present invention is to provide a small, highly accurate, highly reliable, and inexpensive optical sensor unit.
(構成)
上記目的を達成するため、本発明は、信号処理回路の抵
抗、導体等を印刷形成したセラミック、ガラス等の基板
上に、パッケージされていない光電変換素子のデバイス
を配設し、少なくとも充電変換素子の受光窓部を透明な
パッケージ材料にて被覆し、その他基板全体は焼成絶縁
材にて被憶し九ことを特徴としている。(Structure) In order to achieve the above object, the present invention disposes an unpackaged photoelectric conversion element device on a substrate made of ceramic, glass, etc. on which resistors, conductors, etc. of a signal processing circuit are printed, and at least It is characterized in that the light receiving window of the charge conversion element is covered with a transparent packaging material, and the rest of the board is covered with a fired insulating material.
以下に本発明の実施例を第1図〜第3図に基づいて説明
する。Embodiments of the present invention will be described below based on FIGS. 1 to 3.
第1図は樹脂被覆前の光センサユニットの正面図、第2
図は光センサユニットの上面図、第3図は内部回路構成
図である。Figure 1 is a front view of the optical sensor unit before resin coating, Figure 2
The figure is a top view of the optical sensor unit, and FIG. 3 is an internal circuit configuration diagram.
セラミック又はガラスからなる基板21の正にミルクス
クリーン印刷により導体22を形成し、更に抵抗体ペー
ストを同様に印刷して抵抗23を形成して厚膜印刷基板
を構成する。この基板21面上にはトランジスタ、オペ
アンプIC,コンデンサ等のチップ部品24をクリーム
半田にて接着し、リフロ一方式で半田25付する。この
時、フォトダイオードやフォトトランジスタ等の受光素
子9をデバイス状のチップのまま基板21上に接着し、
ボンディングによりリード線26を導体22に接続する
。A conductor 22 is formed by milk screen printing on a substrate 21 made of ceramic or glass, and a resistor 23 is formed by printing a resistor paste in the same manner to form a thick film printed substrate. On the surface of this substrate 21, chip components 24 such as transistors, operational amplifier ICs, capacitors, etc. are bonded with cream solder, and solder 25 is applied using a reflow one-way method. At this time, the light-receiving element 9 such as a photodiode or phototransistor is glued onto the substrate 21 as a device-shaped chip,
Lead wire 26 is connected to conductor 22 by bonding.
基板21上の信号処理回路構成は第3図に示すように受
光素子9の他、オペアンプ27.28、固定抵抗29,
30.可変抵抗31、コンデンサ32.33等からなり
、アンプ回路の増幅度を調整する場合には可変抵抗31
を外付けとすれば良いが、通常は印刷された抵抗31
’e ) IJミングにより微調整しておけば良い。As shown in FIG. 3, the signal processing circuit configuration on the substrate 21 includes, in addition to the light receiving element 9, an operational amplifier 27, 28, a fixed resistor 29,
30. It consists of a variable resistor 31, capacitors 32, 33, etc., and when adjusting the amplification degree of the amplifier circuit, the variable resistor 31 is used.
It is possible to attach it externally, but usually a printed resistor 31 is used.
'e) Fine adjustment can be made by IJ mixing.
上記実装が薪了した後、防湿、除塵、その他の目的で第
1図に示す実装基板21にパッケージングを施す。帛2
図はパッケージされた光センサユニットを示しており、
パッケージには電気絶縁樹脂が用いられ、受光素子9の
受光窓部9aは透明樹脂34にて、またその他の部分は
同様の透明樹脂か又は不透明の絶縁樹脂35にて被覆し
ている。After the above-mentioned mounting is completed, the mounting board 21 shown in FIG. 1 is packaged for moisture-proofing, dust removal, and other purposes. Fragment 2
The figure shows a packaged optical sensor unit,
An electrically insulating resin is used for the package, and the light receiving window 9a of the light receiving element 9 is covered with a transparent resin 34, and the other parts are covered with a similar transparent resin or an opaque insulating resin 35.
尚、必要ならば受光窓部9aの透明樹脂は凸レンズとし
て形成することもできる。Incidentally, if necessary, the transparent resin of the light receiving window portion 9a can be formed as a convex lens.
パッケージング作業は、焼成炉中にエポキシ系パッケー
ジ材の微粉末を浮遊させ、この中に基板21を入れ、加
熱しながら浮遊するパッケージ材を付着させることによ
る。受光窓部9aのみを透明樹脂にしたりレンズ状にす
る場合は、別工程で流し込み等により行う。The packaging operation is carried out by suspending fine powder of an epoxy packaging material in a firing furnace, placing the substrate 21 therein, and attaching the floating packaging material while heating. If only the light-receiving window portion 9a is made of transparent resin or shaped into a lens, this is done by pouring or the like in a separate process.
尚、上記実施例において、受光素子9単体には微少電流
(nA〜μAオーダ)しか発生しないため、配線を引き
廻すことは耐ノイズ上で問題があるが、受光素子9に直
結してアンプ部を設け、インピダンス変換部にFET入
力型オペアンプを用いたり、入力部にガードリングを設
けることにより、耐ノイズ性を改善できる。In the above embodiment, since only a small current (on the order of nA to μA) is generated in the light receiving element 9 alone, routing the wiring poses a problem in terms of noise resistance. The noise resistance can be improved by using a FET input type operational amplifier in the impedance conversion section or by providing a guard ring in the input section.
(効果)
本発明は以上の如く、信号処理回路の抵抗、導体等を印
刷形成したセラミック、ガラス等の基板上に、パッケー
ジされていない光電変換素子のデバイスを配設し、少な
くとも光IIcK換素子の受光窓部を透明なパッケージ
材料にて被覆し、その他基板全体は焼成絶縁材にて被覆
したものであるから、比較的少量生産で、改良のための
変更がある場合にも簡単に対応することができ、しかも
小型で高精度、高信頼性の光センサユニットを安価に製
造することが可能となる。また反射型の光センサユニッ
トとすれば、物体有無の検知のようなデジタル情報の他
、受光蓋の変化からアナログ情報を得ることもできる。(Effects) As described above, the present invention arranges an unpackaged photoelectric conversion element device on a substrate made of ceramic, glass, etc. on which resistors, conductors, etc. of a signal processing circuit are printed, and at least a photo-IIcK conversion element. The light-receiving window is covered with a transparent packaging material, and the rest of the board is covered with a fired insulating material, so it can be produced in relatively small quantities and can easily accommodate changes for improvement. Moreover, it becomes possible to manufacture a small, highly accurate, and highly reliable optical sensor unit at low cost. Furthermore, if a reflective optical sensor unit is used, in addition to digital information such as detecting the presence or absence of an object, analog information can also be obtained from changes in the light receiving lid.
第1図は本発明実施例におけるパッケージ前の光センサ
ユニットの正面図、第2図はパッケージ後の光センサユ
ニットの上面図、第3図は内部回路構成図、第4図は従
来の光センサユニットの概観を示し、(a)は正面図、
(b)は底面図、(C)は側面断面図、(d)は上面図
、第5図は第4図の従来例の内部回路構成図、第6図は
他の従来の光センサユニットの概観を示し、(a)は正
面図、(b)は底面図、(C)は側面図、(d)は上面
図、第7図は第6図の従来例における内部回路構成図で
ある。
8・・・・・・光電変換素子(発光素子)、9・・開光
電変換素子(受光素子)、9a・・・・・・受光窓部、
13・・・・・・信号処理回路、21・・・・・・基板
、22・曲・導体。
23・・・・・・抵抗%24・・・・・・チップ状デバ
イス、34・・・・・・透明樹脂、35・・・・・・絶
縁材。
第1図
第3図
イ J
手続補正@(自発)
昭和62年に177日Figure 1 is a front view of the optical sensor unit before packaging in the embodiment of the present invention, Figure 2 is a top view of the optical sensor unit after packaging, Figure 3 is an internal circuit configuration diagram, and Figure 4 is a conventional optical sensor. The outline of the unit is shown, (a) is a front view;
(b) is a bottom view, (C) is a side sectional view, (d) is a top view, FIG. 5 is an internal circuit configuration diagram of the conventional example of FIG. 4, and FIG. 6 is of another conventional optical sensor unit. The general appearance is shown, (a) is a front view, (b) is a bottom view, (C) is a side view, (d) is a top view, and FIG. 7 is an internal circuit configuration diagram of the conventional example of FIG. 6. 8... Photoelectric conversion element (light emitting element), 9... Photoelectric conversion element (light receiving element), 9a... Light receiving window section,
13...Signal processing circuit, 21...Substrate, 22.Bend/conductor. 23... Resistance% 24... Chip-like device, 34... Transparent resin, 35... Insulating material. Figure 1 Figure 3 A J Procedural amendment @ (voluntary) 177 days in 1988
Claims (1)
、ガラス等の基板上に、パッケージされていない光電変
換素子のデバイスを配設し、少なくとも光電変換素子の
受光窓部を透明なパッケージ材料にて被覆し、その他基
板全体は焼成絶縁材にて被覆したことを特徴とする光セ
ンサユニット。An unpackaged photoelectric conversion element device is placed on a ceramic, glass, or other substrate on which resistors, conductors, etc. of a signal processing circuit are printed, and at least the light receiving window of the photoelectric conversion element is covered with a transparent packaging material. An optical sensor unit characterized in that the entire substrate is covered with a fired insulating material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61147068A JPS63252485A (en) | 1986-06-25 | 1986-06-25 | Photosensor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61147068A JPS63252485A (en) | 1986-06-25 | 1986-06-25 | Photosensor unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63252485A true JPS63252485A (en) | 1988-10-19 |
Family
ID=15421754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61147068A Pending JPS63252485A (en) | 1986-06-25 | 1986-06-25 | Photosensor unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63252485A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005091368A1 (en) * | 2004-03-18 | 2005-09-29 | Infineon Technologies Ag | Semiconductor component with a stacked construction, comprising an optically active semiconductor chip and associated production method |
-
1986
- 1986-06-25 JP JP61147068A patent/JPS63252485A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005091368A1 (en) * | 2004-03-18 | 2005-09-29 | Infineon Technologies Ag | Semiconductor component with a stacked construction, comprising an optically active semiconductor chip and associated production method |
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