JPS6324411B2 - - Google Patents
Info
- Publication number
- JPS6324411B2 JPS6324411B2 JP22300884A JP22300884A JPS6324411B2 JP S6324411 B2 JPS6324411 B2 JP S6324411B2 JP 22300884 A JP22300884 A JP 22300884A JP 22300884 A JP22300884 A JP 22300884A JP S6324411 B2 JPS6324411 B2 JP S6324411B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cooling
- substrate holder
- cooling gas
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22300884A JPS61103531A (ja) | 1984-10-25 | 1984-10-25 | 真空処理装置における基板の冷却機構 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22300884A JPS61103531A (ja) | 1984-10-25 | 1984-10-25 | 真空処理装置における基板の冷却機構 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61103531A JPS61103531A (ja) | 1986-05-22 |
| JPS6324411B2 true JPS6324411B2 (enEXAMPLES) | 1988-05-20 |
Family
ID=16791379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22300884A Granted JPS61103531A (ja) | 1984-10-25 | 1984-10-25 | 真空処理装置における基板の冷却機構 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61103531A (enEXAMPLES) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0713960B2 (ja) * | 1986-12-23 | 1995-02-15 | 日本電気株式会社 | ドライエッチング装置 |
| JPS63170468U (enEXAMPLES) * | 1987-04-28 | 1988-11-07 | ||
| FR2628985B1 (fr) * | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a paroi protegee contre les depots |
| JP2002050809A (ja) | 2000-08-01 | 2002-02-15 | Anelva Corp | 基板処理装置及び方法 |
| JP5462272B2 (ja) * | 2009-10-05 | 2014-04-02 | キヤノンアネルバ株式会社 | 基板冷却装置、スパッタリング装置および電子デバイスの製造方法 |
-
1984
- 1984-10-25 JP JP22300884A patent/JPS61103531A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61103531A (ja) | 1986-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0160510B1 (ko) | 다구역 평면 히이터 어셈블리 및 그의 운전 방법 | |
| TWI725979B (zh) | 承載器及基板處理裝置 | |
| US4612077A (en) | Electrode for plasma etching system | |
| US7248456B2 (en) | Electrostatic chuck | |
| US5675471A (en) | Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity | |
| US8921740B2 (en) | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support | |
| TWI481297B (zh) | 控制空間溫度分布之方法及裝置 | |
| JP4554075B2 (ja) | 熱処理チャンバ用基板支持体及び熱処理チャンバ用基板支持体の形成方法 | |
| US20060076108A1 (en) | Method and apparatus for controlling temperature of a substrate | |
| JPH09232415A (ja) | 基板冷却装置及び化学蒸気反応装置並びに基板の温度制御制御方法 | |
| US20030089457A1 (en) | Apparatus for controlling a thermal conductivity profile for a pedestal in a semiconductor wafer processing chamber | |
| KR20040015208A (ko) | 작업편 지지체의 표면을 가로지르는 공간 온도 분포를제어하기 위한 방법 및 장치 | |
| GB2114813A (en) | Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet | |
| JP2020524393A5 (enEXAMPLES) | ||
| JP2010041041A (ja) | 基板ホルダ | |
| US6403479B1 (en) | Process for producing semiconductor and apparatus for production | |
| JP2004282047A (ja) | 静電チャック | |
| JP2005191561A (ja) | 静電チャック | |
| JP4418484B2 (ja) | 静電チャック及びそれを用いたワークの冷却方法 | |
| JPS6324411B2 (enEXAMPLES) | ||
| JP2007201355A (ja) | ウエハ載置用電極 | |
| JP3021264B2 (ja) | 基板加熱・冷却機構 | |
| KR20010101007A (ko) | 반도체 기판 열처리용 장치 및 방법 | |
| JP2001127142A (ja) | 半導体製造装置 | |
| JPH045000B2 (enEXAMPLES) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |