JPS63243817A - Silicon microsensor - Google Patents
Silicon microsensorInfo
- Publication number
- JPS63243817A JPS63243817A JP62079243A JP7924387A JPS63243817A JP S63243817 A JPS63243817 A JP S63243817A JP 62079243 A JP62079243 A JP 62079243A JP 7924387 A JP7924387 A JP 7924387A JP S63243817 A JPS63243817 A JP S63243817A
- Authority
- JP
- Japan
- Prior art keywords
- film
- boron
- layer
- silicon
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 35
- 239000010703 silicon Substances 0.000 title claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000010408 film Substances 0.000 abstract description 42
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052796 boron Inorganic materials 0.000 abstract description 14
- 238000005530 etching Methods 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 239000000872 buffer Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- KWMLJOLKUYYJFJ-UHFFFAOYSA-N 2,3,4,5,6,7-Hexahydroxyheptanoic acid Chemical compound OCC(O)C(O)C(O)C(O)C(O)C(O)=O KWMLJOLKUYYJFJ-UHFFFAOYSA-N 0.000 description 1
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明はシリコンの異方性エツチングを利用したシリコ
ンマイクロセンサに関し、特に支持体部の材料および構
造に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a silicon microsensor using anisotropic etching of silicon, and particularly to the material and structure of the support portion.
〈発明の背景〉
赤外線センサ、フローセンサ、ガスセンサなど熱収支を
利用するセンサでは、発熱部や検出部を微小化・薄膜化
することによって高感度化、高速応答化、低消費電力化
が可能となる。また、圧力センサ、振動センサ、加速度
センサなど可動部を有するセンサでは、可動部とその支
持部を薄膜化することによって、高感度化、微小化が図
られる。<Background of the Invention> In sensors that utilize heat balance, such as infrared sensors, flow sensors, and gas sensors, it is possible to achieve higher sensitivity, faster response, and lower power consumption by miniaturizing and thinning the heat generating part and detection part. Become. Further, in sensors having a movable part such as a pressure sensor, a vibration sensor, and an acceleration sensor, high sensitivity and miniaturization can be achieved by making the movable part and its supporting part thin.
以上のように、センサ部を非常に薄い支持体で形成する
ことによってセンサの高感度化、低消費電力化、センサ
チッグの微小化、さらには各種センナの複合化、集積化
も可能になる。このような理由から、シリコン基板のご
く表面層の酸化膜や、高濃度ポロンドーグ層を残し、下
層のシリコンをエツチングで除去して、支持体及びセン
サ部を形成するいわゆるシリコンマイクロセンナの開発
が盛んでるる。その支持体の形状は、ブリッジ、カンチ
レバー、ダイアフラムなど様々でるる。支持体の概略図
を第１図囚（Ｂ）（Ｑに示す。つぎに上述の薄い支持体
を形成する方法について説明する。As described above, by forming the sensor portion with a very thin support, it becomes possible to increase the sensitivity of the sensor, reduce power consumption, miniaturize the sensor chip, and furthermore, combine and integrate various sensors. For this reason, so-called silicon microsensors are being actively developed in which the underlying silicon layer is removed by etching, leaving the very surface oxide film or high-concentration Porondog layer on the silicon substrate to form the support and sensor section. Out. The shape of the support body varies, such as a bridge, a cantilever, and a diaphragm. A schematic diagram of the support is shown in Figure 1 (B) (Q). Next, a method for forming the above-mentioned thin support will be described.
シリコン単結晶をＥＰＷ液（エチレンジアミン・ピロカ
テコール・水の混合液）ＮａＯＨ，ＫＯＨ’ｌどのアル
カリ液でエツチングすると、結晶軸によってエツチング
速度が大きく異なる結晶軸異方性がある。すなわち＜１
１１＞方向のエツチング速度が、他の＜１００＞や（＋
１０＞等の方向に比べて極端に遅い。この性質のために
、例えば（＋００）ウェハーに、ＳｉＯ２をマスクとし
てエツチングで穴を開けると、ウェノ・−面と５４．７
°の角度をなす４つの（ＩＩ＋）面で囲まれた逆ピラミ
ッド形の穴が開く。また（＋１０）ウェノ・−の場合に
は、ウェハー面と垂直な穴が開く。（＋００）ウエノ・
−を用いて、熱酸化膜全形成したのち、パターン化して
マスクとし、シリコンのエツチング全行なった例が第１
図である。この際に支持体として残るのは、熱酸化膜の
みである。熱酸化膜の代わりに、ＣＶＤ （Ｃｈｅｍｉ
ｃａｔＶａｐｏｕｒ Ｄｅｐｏｓｉｔｉｏｎ ）法等で
形成した５ｉ０２膜や、Ｓｉ３Ｎ４膜を用いた例もある
。When a silicon single crystal is etched with an alkaline solution such as EPW solution (ethylenediamine/pyrocatechol/water mixture) NaOH or KOH'l, there is crystal axis anisotropy in which the etching rate varies greatly depending on the crystal axis. i.e. <1
11> direction is different from other <100> and (+
It is extremely slow compared to directions such as 10>. Because of this property, for example, if a hole is etched in a (+00) wafer using SiO2 as a mask, the wafer - side and 54.7
An inverted pyramid-shaped hole surrounded by four (II+) planes forming an angle of .degree. is opened. In the case of (+10) wafer -, a hole is formed perpendicular to the wafer surface. (+00) Ueno・
The first example is that after forming the entire thermal oxide film using -, patterning it and using it as a mask, etching the silicon
It is a diagram. At this time, only the thermal oxide film remains as a support. Instead of thermal oxide film, CVD (Chemistry)
There are also examples using a 5i02 film formed by a cat vapor deposition method or the like, or a Si3N4 film.
その他の薄い支持体を形成する方法として、シリコンエ
ツチングの際の不純物濃度依存性を利用する方法がある
。前述のエツチング液では、ボロンを高濃度に拡散した
シリコン層は、エツチング速度が遅くなり、エツチング
停止層として働く。Another method for forming a thin support is to utilize the impurity concentration dependence during silicon etching. In the above etching solution, the silicon layer in which boron is diffused at a high concentration slows down the etching rate and acts as an etching stop layer.
従って、シリコンウェハーの片面にボロンを高濃度に拡
散した層全形成し、裏面よｐ ５ｉ０２ Ｓｉ３Ｎ４な
どをマスクとしてエツチングすると、第１図（Ｃ）のダ
イアフラムが形成される。ブリッジ、カンチレバー等も
同様にして形成することができる。ただし、この際支持
体として残るのは、高濃度ボロンドープ層である。Therefore, by forming an entire layer in which boron is diffused at a high concentration on one side of a silicon wafer and etching it from the back side using p 5i02 Si3N4 as a mask, the diaphragm shown in FIG. 1(C) is formed. Bridges, cantilevers, etc. can also be formed in the same manner. However, what remains as the support at this time is the highly concentrated boron-doped layer.
〈発明が解決しようとする問題点〉
酸化膜を用いて、薄い支持体を形成した場合、膜厚が１
ミクロン以下のように薄くなると、支持体の湾曲が起こ
ったり、機械的強度が弱くなる。<Problems to be solved by the invention> When a thin support is formed using an oxide film, the film thickness is 1
When the thickness becomes smaller than microns, the support may become curved or its mechanical strength becomes weak.
逆に厚くなると、シリコンと酸化膜との熱膨張率の差に
よって歪が加わり、支持体にヒビ割れや、破損が起こる
。また厚い熱酸化膜は作製に時間を要し、生産性が悪′
＜、得られる膜厚はせいぜい２〜３ミクロン以下である
。On the other hand, if it becomes thicker, the difference in thermal expansion coefficients between the silicon and oxide films will cause strain, causing cracks and damage to the support. In addition, thick thermal oxide films require time to fabricate, resulting in poor productivity.
<The film thickness obtained is at most 2 to 3 microns or less.
一方、高濃度ボロンドープ層で薄い支持体を形成した場
合ボロンドープの深さは、約ｌθミクロン程度まで深く
できるので支持体を厚くでき、また、熱膨張率はシリコ
ン基板と等しいので、歪みがなく、平坦で機械的強度の
強い支持体が得られる。しかし、高濃度ボロンドープ層
の電気抵抗は低いので、この支持体上に、センサ材料を
形成しようとする際には、高濃度ボロンドープ層とセン
ナ材料の間を電気的に絶縁する必要がある。On the other hand, when a thin support is formed with a highly concentrated boron-doped layer, the depth of boron doping can be as deep as about lθ microns, so the support can be made thicker, and the coefficient of thermal expansion is the same as that of a silicon substrate, so there is no distortion. A flat support with strong mechanical strength can be obtained. However, since the high concentration boron doped layer has a low electrical resistance, when a sensor material is to be formed on this support, it is necessary to electrically insulate the high concentration boron doped layer and the senna material.
く問題点を解決するための手段〉
上記問題点を解決するために、本発明ではシリコンウェ
ハー表面に、接合深さを深くドーピングした高濃度ボロ
ンドープ層と、さらにその表面を薄く被覆した絶縁膜層
との２層で、ブリッジ、カンチレバー、ダイヤフラム等
の形状の支持体を形成した。酸化膜等の絶縁膜の熱膨張
率は、シリコンとは異なるが、膜厚が薄いため、支持体
全体としての熱膨張率はボロンドープ層によって定まり
、従って支持体部の熱膨張率はシリコンと等しくなるの
で作製時の熱的歪みが少すく、機械的強度。Means for Solving the Problems> In order to solve the above problems, the present invention provides a silicon wafer surface with a highly concentrated boron doped layer doped to a deep junction depth, and an insulating film layer thinly covering the surface. The two layers formed a support in the shape of a bridge, cantilever, diaphragm, etc. The coefficient of thermal expansion of insulating films such as oxide films is different from that of silicon, but since the film thickness is thin, the coefficient of thermal expansion of the support as a whole is determined by the boron-doped layer, so the coefficient of thermal expansion of the support part is equal to that of silicon. As a result, there is little thermal distortion during fabrication, and mechanical strength is high.
熱的強度が強く、シかも湾曲のない平坦な支持体（ブリ
ッジ、カンチレバー、ダイヤスラム等）が得られる。A flat support (bridge, cantilever, diaphragm, etc.) with strong thermal strength and no bending can be obtained.
ボロンドープ層を被覆する薄い絶縁膜は、熱酸化膜に限
定されない。ＣＶＤ法、スパッタリング法、その他の方
法で形成したｓ ｉｏｚ膜でも良いし、Ｓｉ３Ｎ４膜、
Ａｔｚ０３膜も良好である。作製プロセスの点からは
、ボロンドーピングと同じ装置（拡散装置）を使用でき
る熱酸化膜が適するが、熱膨張率の点からは、Ｓｉ３Ｎ
４膜、 ＡｔｚＯ３膜の方が良い。The thin insulating film covering the boron-doped layer is not limited to a thermal oxide film. It may be a SiOZ film formed by CVD method, sputtering method, or other method, or Si3N4 film,
The Atz03 film is also good. From the viewpoint of the manufacturing process, a thermal oxide film is suitable because it can use the same equipment (diffusion equipment) as for boron doping, but from the viewpoint of thermal expansion coefficient, Si3N
4 film, AtzO3 film is better.
〈実施例１〉
第１図に本発明の１実施例であるシリコンマイクロセン
サの断面図及び平面図を、第２図に、その製作工程毎の
断面図を示す。<Example 1> FIG. 1 shows a cross-sectional view and a plan view of a silicon microsensor that is an example of the present invention, and FIG. 2 shows cross-sectional views of each manufacturing process.
ｎ型シリコンウェノ・−３表面を熱酸化し、フォトエツ
チングで熱酸化膜４をパターン化する（第２図（Ａ））
。このパターン化した熱酸化膜４をマスクとして、ボロ
ンを拡散しボロンドープ層５を形成する（第２図（Ｂ）
）。この際ボロン濃度は、できるだけ高濃度に（ｌ ｘ
ｌ ０２０７ｃｍ３以上が好ましい）、また接合深さ
はかなシ深く（約５μｍ）する。つぎに、マスクの熱酸
化膜４を７ツ酸緩衝液で除去した後（第２図（Ｃ） ）
、沸点近くまで昇温したＥＰＷエツチング液中に浸漬
し、ボロ／ドーグ層５によりブリッジが形成されるまで
エツチングを行なう（第２図（Ｄ））。さらに、熱酸化
によって、ボロンドープ層５の厚さに比較して十分薄い
酸化膜６（約３００ＯＡ）を形成する（第２図（Ｅ））
。最後に、得られたブリッジ部にセンサ材料となる薄膜
７および電極８を形成して、第１図のセンサが完成する
。上記実施例では、支持体の形状がブリッジの例を示し
たが、カンチレバー、ダイヤフラムについても同様に作
製可能である。The surface of the n-type silicon wafer-3 is thermally oxidized, and the thermal oxide film 4 is patterned by photoetching (Fig. 2 (A)).
. Using this patterned thermal oxide film 4 as a mask, boron is diffused to form a boron-doped layer 5 (see FIG. 2(B)).
). At this time, the boron concentration should be as high as possible (l x
(preferably 10207 cm3 or more), and the bonding depth is very deep (approximately 5 μm). Next, after removing the thermal oxide film 4 of the mask with a heptonic acid buffer (Fig. 2 (C))
The substrate is immersed in an EPW etching solution whose temperature has been raised to near its boiling point, and etching is performed until a bridge is formed by the Boro/Dawg layer 5 (FIG. 2(D)). Furthermore, by thermal oxidation, an oxide film 6 (approximately 300 OA) which is sufficiently thin compared to the thickness of the boron doped layer 5 is formed (FIG. 2(E)).
. Finally, a thin film 7 and an electrode 8, which serve as a sensor material, are formed on the obtained bridge portion, and the sensor shown in FIG. 1 is completed. In the above embodiments, the shape of the support is a bridge, but a cantilever or a diaphragm can also be produced in the same manner.
〈実施例２〉
第３図に本発明の他の実施例であるシリコンマイクロセ
ンサの断面図及び平面図を、第４図にその製作工程毎の
断面図を示す。<Embodiment 2> FIG. 3 shows a sectional view and a plan view of a silicon microsensor according to another embodiment of the present invention, and FIG. 4 shows sectional views of each manufacturing process.
ｎ型シリコンウェハー３を熱酸化し、フォトエツチング
で熱酸化膜４′ｊ＆：パターン化し、シリコンエツチン
グ部のみ熱酸化膜４を残す（下４図＜Ａ） ）。The n-type silicon wafer 3 is thermally oxidized and patterned into a thermal oxide film 4'j&: by photoetching, leaving the thermal oxide film 4 only in the silicon etched area (Figure 4 <A)).
このパターン化した熱酸化膜４をマスクとしてボロンを
拡散し、ボロンドープ層５を形成する。同時にボロンド
ープ層５の表面に熱酸化膜６を薄く形成する（第４図（
Ｂ） ）。ボロンドープ層５は数１層ｍｍ−１Ｏｐ、熱
酸化膜６は＋０００−５０００Ａ程度が好ましい。つぎ
にマスクの酸化膜４のみを、フォトエツチングで除去し
た後（第４図（Ｃ） ） 、沸点近くまで昇温したＥＰ
Ｗエツチング液中に浸漬し、シリコンのエツチングを行
なう。ボロンドープ層５と酸化膜はエツチングされない
ので、これら２層からなるダイヤフラムが形成される（
第４図（Ｄ））。最後に得られたダイヤスラム部に、セ
ンサ材料となる薄膜７および電極８を形成して、第３図
のセンサが完成する。Using this patterned thermal oxide film 4 as a mask, boron is diffused to form a boron-doped layer 5. At the same time, a thin thermal oxide film 6 is formed on the surface of the boron-doped layer 5 (see Fig. 4).
B) ). It is preferable that the boron doped layer 5 has a thickness of several mm<-1 > and the thermal oxide film 6 has a thickness of about +000-5000A. Next, after removing only the oxide film 4 of the mask by photoetching (Fig. 4(C)), the EP was heated to near its boiling point.
Immerse in W etching solution to perform silicon etching. Since the boron doped layer 5 and the oxide film are not etched, a diaphragm consisting of these two layers is formed (
Figure 4(D)). Finally, a thin film 7 and an electrode 8, which serve as a sensor material, are formed on the obtained diaphragm portion, and the sensor shown in FIG. 3 is completed.
〈発明の効果〉
本発明の支持体上にセンサ材料を形成することにより、
機械的強度、熱的強度が強く、信頼性の高いシリコンマ
イクロセンサが得られる。<Effects of the Invention> By forming the sensor material on the support of the present invention,
A silicon microsensor with high mechanical strength, high thermal strength, and high reliability can be obtained.
そして、このシリコンマイクロセンサは、赤外線センサ
、フローセンサ、ガスセンサ等の熱収支を利用するセン
サに応用でき、高感度化、低消費電力化に役立つ。また
、圧カセンサ、振動センサ。This silicon microsensor can be applied to sensors that utilize heat balance, such as infrared sensors, flow sensors, and gas sensors, and is useful for increasing sensitivity and reducing power consumption. Also, pressure sensors and vibration sensors.
加速度センサ等可動部を有するセンナへの応用も可能で
ある。さらに、センサの微小化、複合化。Application to sensors having movable parts such as acceleration sensors is also possible. Furthermore, sensors are becoming smaller and more complex.
集積化にも寄与する。It also contributes to integration.
第１図は本発明の１実施例を示すシリコンマイクロセン
サの断面図及び平面図でるる。
第２図は第１図に示すシリコンマイクロセンサの製造工
程図である。
第３図は本発明の他の実施例を示すシリコンマイクロセ
ンサの断面図及び平面図である。
第４図は第３図に示すシリコンマイクロセンサの製造工
程図である。
第５図は従来のシリコンマイクロセンサの支持体形状を
示す講成図である。
３・・・シリコン基板、４・・・熱酸化膜、５・・・ボ
ロンドープ層、６・・・熱酸化膜、７・・・セン丈膜、
８・・・電極。
代理人 弁理士 杉 山 毅 至（他１名）第２図
第４０FIG. 1 shows a sectional view and a plan view of a silicon microsensor showing one embodiment of the present invention. FIG. 2 is a manufacturing process diagram of the silicon microsensor shown in FIG. 1. FIG. 3 is a sectional view and a plan view of a silicon microsensor showing another embodiment of the present invention. FIG. 4 is a manufacturing process diagram of the silicon microsensor shown in FIG. 3. FIG. 5 is a schematic diagram showing the shape of a support of a conventional silicon microsensor. 3... Silicon substrate, 4... Thermal oxide film, 5... Boron-doped layer, 6... Thermal oxide film, 7... Thick film,
8...electrode. Agent: Patent attorney Takeshi Sugiyama (and 1 other person) Figure 2, Figure 40
Claims (1)
付着した薄い絶縁膜層とから成る薄層を支持体とし、該
支持体の前記絶縁膜上にセンサ膜を設けたことを特徴と
するシリコンマイクロセンサ。 ２、薄い絶縁膜層の膜厚が、高濃度ボロンドープ層の厚
みよりも小さい特許請求の範囲第１項記載のシリコンマ
イクロセンサ。 ３、薄い絶縁膜層が、ＳｉＯ＿２、Ｓｉ＿３Ｎ＿４、Ａ
ｌ＿２Ｏ＿３の少なくとも１種類から成る特許請求の範
囲第１項又は第２項記載のシリコンマイクロセンサ。[Claims] 1. A thin layer consisting of a highly concentrated boron-doped layer and a thin insulating film layer attached to at least one side of the layer is used as a support, and a sensor film is provided on the insulating film of the support. A silicon microsensor featuring: 2. The silicon microsensor according to claim 1, wherein the thickness of the thin insulating film layer is smaller than the thickness of the heavily boron-doped layer. 3. The thin insulating film layer is SiO_2, Si_3N_4, A
The silicon microsensor according to claim 1 or 2, comprising at least one type of l_2O_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079243A JPH0650255B2 (en) | 1987-03-31 | 1987-03-31 | Method for manufacturing silicon microsensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079243A JPH0650255B2 (en) | 1987-03-31 | 1987-03-31 | Method for manufacturing silicon microsensor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7229049A Division JP2617287B2 (en) | 1995-09-06 | 1995-09-06 | Silicon micro sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63243817A true JPS63243817A (en) | 1988-10-11 |
| JPH0650255B2 JPH0650255B2 (en) | 1994-06-29 |
Family
ID=13684417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62079243A Expired - Fee Related JPH0650255B2 (en) | 1987-03-31 | 1987-03-31 | Method for manufacturing silicon microsensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0650255B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5048336A (en) * | 1988-12-29 | 1991-09-17 | Sharp Kabushiki Kaisha | Moisture-sensitive device |
| JPH07198646A (en) * | 1993-12-04 | 1995-08-01 | Lg Electron Inc | Low power-consumption-type thin film gas sensor and preparation thereof |
| JP2002344036A (en) * | 2001-05-11 | 2002-11-29 | Seiko Instruments Inc | Manufacturing method of membrane |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58121815A (en) * | 1982-01-14 | 1983-07-20 | Murata Mfg Co Ltd | Piezoelectric resonator |
| JPS6122899A (en) * | 1984-07-12 | 1986-01-31 | 松下電器産業株式会社 | Iron |
| JPS61191953A (en) * | 1985-02-20 | 1986-08-26 | Richo Seiki Kk | Gas detector |
| JPS6249251A (en) * | 1985-08-28 | 1987-03-03 | Yamatake Honeywell Co Ltd | Gas sensor |
-
1987
- 1987-03-31 JP JP62079243A patent/JPH0650255B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58121815A (en) * | 1982-01-14 | 1983-07-20 | Murata Mfg Co Ltd | Piezoelectric resonator |
| JPS6122899A (en) * | 1984-07-12 | 1986-01-31 | 松下電器産業株式会社 | Iron |
| JPS61191953A (en) * | 1985-02-20 | 1986-08-26 | Richo Seiki Kk | Gas detector |
| JPS6249251A (en) * | 1985-08-28 | 1987-03-03 | Yamatake Honeywell Co Ltd | Gas sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5048336A (en) * | 1988-12-29 | 1991-09-17 | Sharp Kabushiki Kaisha | Moisture-sensitive device |
| JPH07198646A (en) * | 1993-12-04 | 1995-08-01 | Lg Electron Inc | Low power-consumption-type thin film gas sensor and preparation thereof |
| JP2002344036A (en) * | 2001-05-11 | 2002-11-29 | Seiko Instruments Inc | Manufacturing method of membrane |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0650255B2 (en) | 1994-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |