JPS63238263A - Dustproof plate for vacuum film forming device - Google Patents
Dustproof plate for vacuum film forming deviceInfo
- Publication number
- JPS63238263A JPS63238263A JP62071009A JP7100987A JPS63238263A JP S63238263 A JPS63238263 A JP S63238263A JP 62071009 A JP62071009 A JP 62071009A JP 7100987 A JP7100987 A JP 7100987A JP S63238263 A JPS63238263 A JP S63238263A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- film forming
- dust
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000428 dust Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000007740 vapor deposition Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 230000002265 prevention Effects 0.000 claims description 15
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 5
- 238000004299 exfoliation Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は真空ｌ成膜装置内におけるゴミ防止に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to dust prevention within a vacuum film forming apparatus.
（発明の概要〕
本発明は真空成膜装置内において、被処理材である基板
以外で、スパッタ膜もしくは蒸着膜が住むする部分をタ
ーゲットもしくは蒸着源と同じ材質とすることにより、
膜のはがれによるゴミの発生を防止したものである。(Summary of the Invention) The present invention provides a method in which the sputtered film or the deposited film resides in a part other than the substrate to be processed, in a vacuum film forming apparatus, by using the same material as the target or the deposition source.
This prevents the generation of dust due to peeling of the film.
従来、Ｊ′〔空容器壁面等に設けたステンレスで製作さ
れた防着板が知られているが、これは５空容器壁面への
スパッタ膜等の付むを防止し、前記１空容器内の帰除を
しやずくしたものであった。Conventionally, there has been known an adhesion prevention plate made of stainless steel that is installed on the wall surface of an empty container. It was a gradual removal of the meaning.
（発明が解決しようとする問題点〕
しかし、従来の防着板では、スフー／レスと異種のスパ
ッタ膜もしくは蒸＃１膜が付着すると、熱膨張率の違い
によるストレスで防首仮に付着した膜のはがれは避けら
れず、ゴミが発生ずるという問題点を有する。(Problems to be solved by the invention) However, when a sputtered film or vaporized #1 film of a different type from Suffu/Less adheres to the conventional adhesion prevention plate, the stress caused by the difference in thermal expansion coefficient causes the adhesion of the adhesion prevention plate. Peeling is unavoidable and there is a problem in that dust is generated.
そこで本発明は、このような問題点を解決するもので、
その目的とするところは、基板以外に住むしたスパッタ
膜もしくは蒸着膜のはがれを防止することにより、前記
基板に付着する膜の欠陥をおさえる真空成膜装置のゴミ
防止板を提供することにある。Therefore, the present invention aims to solve these problems.
The purpose is to provide a dust prevention plate for a vacuum film forming apparatus that suppresses defects in the film adhering to the substrate by preventing peeling of the sputtered film or vapor deposited film that resides on a surface other than the substrate.
本発明のＪ″Ｌ空成Ｇ ＨＮのゴミ防止板は、スパッタ
リングソース源としてのターゲットもしくは蒸廿源、と
被処理材を保持する基板；１１ルダとを収容した真空容
器内において、被処理材以外でスパッタ膜もしくは蒸着
Ｉ！２が付ａする部分の全部あるいは一部を、前記ター
ゲットもしくは蒸着源と同じ材質とすることを特徴とす
る。The dust prevention plate of the J″L air-formed G HN of the present invention can be used to remove the material to be processed in a vacuum container containing a target or evaporation source as a sputtering source and a substrate for holding the material to be processed. Other than that, all or part of the part to which the sputtered film or vapor deposition I!2 is applied is made of the same material as the target or vapor deposition source.
本発明の上記の構成によれば、基板以外の部分、たとえ
ばＪ”を空容器壁面防む仮、シャック等に付着したスパ
ツタ膜もしくは蒸む膜は、同−熱膨長率のためはがれに
クク、密行性は向上する。従ってコミの発生を防止する
ことができる。According to the above-described structure of the present invention, the spatter film or steaming film that adheres to the part other than the substrate, such as the temporary shack that protects the wall surface of the empty container, is difficult to peel off due to the same coefficient of thermal expansion. , the density is improved. Therefore, it is possible to prevent the occurrence of fleas.
以下に本発明の実施例を図面に基づいて説明する。第１
図において、Ｊ″Ｌ空容器ｌ内に被処理材である基板６
を、基板ホルダゴミ防止板５を介して基板ホルダ４に固
定する。°前記基板ボルダ４と対向して、ターゲット８
を、絶縁物１０を介して真空容器ｌに固定しであるター
ゲットホルダ９に取り付ける。ターゲット８ならびにタ
ーゲット；１、ルダＯの周りにはシールドリング７を、
また前記ターゲット８と基板６との間にはシャフタ３を
、また真空容器壁面にはゴミ防止板２をそれぞれ備えた
スパッタ装置である。Embodiments of the present invention will be described below based on the drawings. 1st
In the figure, a substrate 6, which is a material to be processed, is placed inside an empty container J″L.
is fixed to the substrate holder 4 via the substrate holder dust prevention plate 5. ° Opposite the substrate boulder 4, a target 8
is fixed to a vacuum vessel l via an insulator 10 and attached to a target holder 9. Target 8 and target; 1, shield ring 7 around Ruda O,
The sputtering apparatus is also equipped with a shutter 3 between the target 8 and the substrate 6, and a dust prevention plate 2 on the wall of the vacuum chamber.
本実施例では、ターゲット８にタンタル（９０，０００
０％）を用い、シャック３、シールトリ／グア、基板ホ
ルダゴミ防止板５、真空容器壁面ゴミ防止板２の材質は
ターゲット８と同じタンタル（純度９９Ｖ＆）である。In this example, the target 8 is tantalum (90,000
The material of the shack 3, the seal tri/gua, the substrate holder dust prevention plate 5, and the vacuum container wall dust prevention plate 2 is tantalum (purity 99V), which is the same as the target 8.
また、これらは他金属にタンタルをハードコートし、強
い密行性があるものであればかまわない。Further, these materials may be other metals as long as they are hard-coated with tantalum and have strong penetrating properties.
ステンレスで作った前記真空容器防着板からは、臥厚ｌ
Ｏμｍ程度のスパツタ膜が併行した時点で膜はがれが生
じるのに比べ、タンタルで作った真空容′ａ’！ｉ面ゴ
ミ防止仮からは、膜厚３０９μｍ程度のスパッタ膜が付
むした頃わずかに観測できた。このことは３０μｍ程度
まではスパツタ膜の膜はがれによるゴミの発生はないこ
とを示す。The vacuum container anti-adhesion plate made of stainless steel has a thickness of l.
Compared to the film that peels off when a sputter film of about 0 μm is applied, the vacuum volume 'a' made from tantalum! A small amount of sputtered film with a thickness of about 309 μm was observed from the i-side dust prevention temporary. This shows that no dust is generated due to peeling of the sputtered film up to a thickness of about 30 μm.
本実施例では、パッチタイプで−の装はを使用したがイ
ンラインタイプの装置でも十分イｆ効であることはいう
までもない。In this embodiment, a patch type device is used, but it goes without saying that an in-line type device is also sufficiently effective.
本発明は以上説明したように、被処理材であるＪＡ板以
外の全部あるいは一部を、ターゲットと同じ材質とする
ことにより、そこからの膜のはがれを防止しゴミの発生
をおさえるという効果をａする。As explained above, the present invention has the effect of preventing the peeling of the film from there and suppressing the generation of dust by making all or part of the material other than the JA board, which is the material to be processed, the same material as the target. a.
第１図は本発明の真空成膜装置のゴミ防止板を備えたス
パッタ５ＡＵ！の構成図である。
１・・・・・・真空容器
２・・・・・・真空容器壁面ゴミ防止板３・・・・・・
シャブタ
４・・・・・・基板ホルダ
５・・・・・・基板ホルダゴミ防止板
６・・・・・・基板
７・・・・・・シールドリング
８・・・・・・ターゲット
９・・・・・・ターゲットホルダ
１０・・・・・・絶縁物
以 上Figure 1 shows a sputter 5AU equipped with a dust prevention plate of the vacuum film forming apparatus of the present invention! FIG. 1...Vacuum container 2...Vacuum container wall dust prevention plate 3...
Shabuta 4... Substrate holder 5... Substrate holder dust prevention plate 6... Substrate 7... Shield ring 8... Target 9... ...Target holder 10...Insulator or higher
Claims (1)
くは蒸着源と、被処理材を保持する基板ホルダとを収容
した真空容器内において、被処理材以外でスパッタ膜も
しくは蒸着膜が付着する部分の全部あるいは一部を、前
記ターゲットもしくは蒸着源と同じ材質とすることを特
徴とする真空成膜装置のゴミ防止板。(1) All or part of the part other than the material to be treated to which the sputtered film or vapor deposited film is attached, in a vacuum container containing a target or vapor deposition source as a sputtering source and a substrate holder that holds the material to be processed. A dust prevention plate for a vacuum film forming apparatus, characterized in that is made of the same material as the target or vapor deposition source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62071009A JPS63238263A (en) | 1987-03-25 | 1987-03-25 | Dustproof plate for vacuum film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62071009A JPS63238263A (en) | 1987-03-25 | 1987-03-25 | Dustproof plate for vacuum film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63238263A true JPS63238263A (en) | 1988-10-04 |
Family
ID=13448074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62071009A Pending JPS63238263A (en) | 1987-03-25 | 1987-03-25 | Dustproof plate for vacuum film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63238263A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02153067A (en) * | 1988-12-05 | 1990-06-12 | Fuji Electric Co Ltd | Shielding body for sputtering device |
| EP0401035A2 (en) * | 1989-06-02 | 1990-12-05 | Kabushiki Kaisha Toshiba | Film forming apparatus and film forming method |
| US5284521A (en) * | 1990-09-21 | 1994-02-08 | Anelva Corporation | Vacuum film forming apparatus |
| JPH0665731A (en) * | 1992-08-24 | 1994-03-08 | Mitsubishi Electric Corp | Apparatus for production of semiconductor |
| US5494494A (en) * | 1992-06-24 | 1996-02-27 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing substrates |
| JPH0892764A (en) * | 1994-09-22 | 1996-04-09 | Nec Kyushu Ltd | Sputtering device |
| US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US5951775A (en) * | 1992-09-30 | 1999-09-14 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| JP2006227430A (en) * | 2005-02-18 | 2006-08-31 | Seiko Epson Corp | Inorganic alignment layer forming apparatus, inorganic alignment layer forming method, inorganic alignment layer, substrate for electronic device, liquid crystal panel, and electronic device |
| JP5658170B2 (en) * | 2009-12-25 | 2015-01-21 | キヤノンアネルバ株式会社 | Sputtering method and sputtering apparatus |
-
1987
- 1987-03-25 JP JP62071009A patent/JPS63238263A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02153067A (en) * | 1988-12-05 | 1990-06-12 | Fuji Electric Co Ltd | Shielding body for sputtering device |
| EP0401035A2 (en) * | 1989-06-02 | 1990-12-05 | Kabushiki Kaisha Toshiba | Film forming apparatus and film forming method |
| US5284521A (en) * | 1990-09-21 | 1994-02-08 | Anelva Corporation | Vacuum film forming apparatus |
| US5505779A (en) * | 1992-06-24 | 1996-04-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing substrates |
| US5494494A (en) * | 1992-06-24 | 1996-02-27 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing substrates |
| US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
| JPH0665731A (en) * | 1992-08-24 | 1994-03-08 | Mitsubishi Electric Corp | Apparatus for production of semiconductor |
| US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US5951775A (en) * | 1992-09-30 | 1999-09-14 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US6143086A (en) * | 1992-09-30 | 2000-11-07 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| JPH0892764A (en) * | 1994-09-22 | 1996-04-09 | Nec Kyushu Ltd | Sputtering device |
| JP2006227430A (en) * | 2005-02-18 | 2006-08-31 | Seiko Epson Corp | Inorganic alignment layer forming apparatus, inorganic alignment layer forming method, inorganic alignment layer, substrate for electronic device, liquid crystal panel, and electronic device |
| JP5658170B2 (en) * | 2009-12-25 | 2015-01-21 | キヤノンアネルバ株式会社 | Sputtering method and sputtering apparatus |
| US8992743B2 (en) | 2009-12-25 | 2015-03-31 | Canon Anelva Corporation | Sputtering method and sputtering apparatus |
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