JPH04301074A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPH04301074A JPH04301074A JP8913291A JP8913291A JPH04301074A JP H04301074 A JPH04301074 A JP H04301074A JP 8913291 A JP8913291 A JP 8913291A JP 8913291 A JP8913291 A JP 8913291A JP H04301074 A JPH04301074 A JP H04301074A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- backing plate
- bonding surface
- deposits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 22
- 239000002245 particle Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005422 blasting Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011362 coarse particle Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は薄膜形成に用いられるス
パッタリング用ターゲットに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target used for forming thin films.
【0002】0002
【従来の技術およびその問題点】種々の固体物質を基板
上に薄膜状に付着させる技術としてスパッタリング法が
広く用いられている。しかし、このようなスパッタリン
グ現象により叩きだされるターゲット物質粒子のうち、
基板に付着して薄膜を形成するのは全体の一部にすぎず
、その他の粒子は装置の内壁に付着したり、ターゲット
及びそのバッキングプレート表面に再付着する。そのた
め、連続的にスパッタリングを行っていくに従って装置
内壁やターゲット及びバッキングプレート表面の付着物
が増加し、その付着物がある程度以上となると、それが
剥離し易くなる。特に、産業用インライン型スパッタリ
ング装置の場合、チャンバー隔壁の開閉を行う際に、チ
ャンバー間の差圧のために、上記した付着物が剥離して
舞い上がり、基板上に付着することがある。このような
付着物は薄膜のピンホール等の欠陥の原因となり、製品
の不良率の増加を持らすため、その発生を極力回避する
ことが望まれる。BACKGROUND OF THE INVENTION Sputtering is widely used as a technique for depositing various solid substances onto a substrate in the form of a thin film. However, among the target material particles ejected by such sputtering phenomenon,
Only some of the particles adhere to the substrate and form a thin film; other particles adhere to the inner walls of the device or redeposit to the surface of the target and its backing plate. Therefore, as sputtering is performed continuously, the amount of deposits on the inner walls of the apparatus, the target, and the backing plate surfaces increases, and when the amount of deposits exceeds a certain level, it becomes easy to peel off. In particular, in the case of an industrial in-line sputtering apparatus, when opening and closing the chamber partition walls, the above-mentioned deposits may peel off and fly up due to the pressure difference between the chambers and adhere to the substrate. Since such deposits cause defects such as pinholes in the thin film and increase the defective rate of products, it is desirable to avoid their occurrence as much as possible.
【0003】実際には、このような付着物の剥離が起こ
るのを防止するため、ある程度連続してスパッタリング
を行う毎に装置内及びターゲット表面のクリーニングを
行い、付着物を除去することが必要となる。この装置内
及びターゲット表面のクリーニングは真空を破る必要が
あり、その後運転を再開するための排気に要する時間を
含め、非常に非能率的な作業である。従って、生産性を
向上させるために、連続してスパッタリングを行える時
間を延長してクリーニング回数を減らすことが望まれて
いる。In practice, in order to prevent such deposits from peeling off, it is necessary to clean the inside of the device and the target surface to remove the deposits every time sputtering is performed continuously. Become. Cleaning the inside of the device and the target surface requires breaking the vacuum, which is a very inefficient process, including the time required for evacuation to resume operation. Therefore, in order to improve productivity, it is desired to extend the time during which sputtering can be performed continuously and reduce the number of times of cleaning.
【0004】本発明は、ターゲット又はターゲット及び
そのバッキングプレートに付着した粒子の剥離を抑制す
ることにより、連続スパッタリング可能時間を延長し、
生産性を著しく向上させ得るスパッタリング用ターゲッ
トを提供することを目的とする。The present invention extends the continuous sputtering time by suppressing the peeling of particles attached to the target or the target and its backing plate.
An object of the present invention is to provide a sputtering target that can significantly improve productivity.
【0005】[0005]
【問題点を解決するための手段】本発明はボンディング
面を除くターゲット表面の全部又は一部あるいはボンデ
ィング面を除くターゲット表面とそのバッキングプレー
トのスパッタリングの雰囲気にさらされる表面の全部又
は一部を粗面とすることにより、前記課題を達成したも
のである。[Means for Solving the Problems] The present invention roughens all or a portion of the target surface excluding the bonding surface, or the surface of the target surface excluding the bonding surface and its backing plate exposed to the sputtering atmosphere. By making it a surface, the above-mentioned problem has been achieved.
【0006】本発明におけるボンディング面とは、ター
ゲットとバッキングプレートの接合面をいい、従ってボ
ンディング面を除くターゲット表面には、ターゲット側
面あるいはマグネトロンスパッタリングにおいてはマグ
ネット形状の影響で殆どエロージョンを受けないターゲ
ット中央部等が含まれる。また、スパッタリング雰囲気
とはその中でプラズマが発生し、スパッタリング現象が
起きて製膜が行われる雰囲気をいう。また、粗面とは、
ターゲットから叩きだされて飛散する粒子を補足し得る
表面性状とすることを意味する。具体的には、ガラスビ
ーズ等、あるいは鉄粒子等によるブラスト処理により上
記粗面化が達成できる。以下に本発明を実施例に従って
説明する。The bonding surface in the present invention refers to the bonding surface between the target and the backing plate. Therefore, the target surface other than the bonding surface includes the target side surface or, in magnetron sputtering, the target center which is hardly subject to erosion due to the influence of the magnet shape. This includes departments, etc. Furthermore, the sputtering atmosphere refers to an atmosphere in which plasma is generated, a sputtering phenomenon occurs, and film formation is performed. Also, what is a rough surface?
This means creating a surface texture that can capture particles that are ejected and scattered from the target. Specifically, the roughening described above can be achieved by blasting with glass beads or the like or iron particles. The present invention will be explained below according to examples.
【0007】[0007]
【実施例1】Taターゲット(200mmφ、厚さ6m
m)の中央部(50mmφ)に#80ガラスビーズによ
るブラスト処理を施し、中央部表面を粗面とした。この
ターゲットを用いてマグネトロンスパッタ(サイドスパ
ッタ型)試験を行ったところ、連続して30バッチの基
板に装置のクリーニングを行うことなく製膜することが
できた。なお、比較のため、上記ブラスト処理を施さな
い同様のターゲットを用いて同様のスパッタ試験を行っ
たところ、3バッチスパッタする毎にクリーニングが必
要であった。これにより、本発明により処理したターゲ
ットは無処理のものに比べて可能バッチ数が約10倍に
増加することが分かった。スパッタ試験終了後、ターゲ
ット中央部を調べると、ブラスト処理により粗面化した
ターゲット表面に多量の粉末の付着が認められた。これ
は粗面化された表面が粗大粒子を効果的にトラップし、
基板上へ飛散するのを防止していることを示すものであ
った。[Example 1] Ta target (200mmφ, thickness 6m
The central part (50 mmφ) of the sample m) was blasted with #80 glass beads to make the central part surface rough. When a magnetron sputtering (side sputtering type) test was conducted using this target, it was possible to continuously form films on 30 batches of substrates without cleaning the apparatus. For comparison, a similar sputtering test was conducted using a similar target that was not subjected to the blasting process, and cleaning was required every three batches of sputtering. As a result, it was found that the number of possible batches for targets treated according to the present invention was increased approximately 10 times compared to targets that were not treated. When the center of the target was examined after the sputtering test, a large amount of powder was found to have adhered to the surface of the target, which had been roughened by the blasting process. This is because the roughened surface effectively traps coarse particles,
This indicates that scattering onto the substrate is prevented.
【0008】[0008]
【実施例2】実施例1のガラスビーズに代えて、#30
のFeショットを用いてブラストした以外は実施例1と
同様に処理し、同様なスパッタを行ったところ、連続処
理可能なバッチ数は38となり、表面粗度がさらに大き
くなると、効果が増大することが分かる。[Example 2] Instead of the glass beads of Example 1, #30
When the same process as in Example 1 was carried out except that the blasting was performed using Fe shot of I understand.
【0009】[0009]
【実施例3】実施例2と同様にターゲット中央部をFe
ショットブラストにより粗面とし、さらに厚さ6mmの
ターゲット側面及び厚さ8mmのバッキングプレート側
面を同様のブラスト処理したターゲット及びバッキング
プレートを用いて実施例1と同様のスパッタを行ったと
ころ、装置のクリーニングなしに連続して40バッチの
基板に製膜することができた。スパッタ後のターゲット
を観察すると、ブラスト処理を施した部分に多量の付着
物が認められ、粗面化したターゲット表面が粗大粒子を
効果的にトラップしたことが分かった。[Example 3] Similar to Example 2, the center part of the target was made of Fe.
Sputtering was carried out in the same manner as in Example 1 using a target and backing plate that had been roughened by shot blasting, and the side surface of the target with a thickness of 6 mm and the side surface of the backing plate with a thickness of 8 mm were subjected to the same blasting process. It was possible to continuously form a film on 40 batches of substrates without using any adhesive. When the sputtered target was observed, a large amount of deposits was observed in the blasted areas, indicating that the roughened target surface effectively trapped coarse particles.
【0010】0010
【発明の効果】以上のような本発明によれば、ターゲッ
ト表面あるいはターゲットとバッキングプレートの表面
の一部を粗面とするという極めて簡単な手段により、連
続してスパッタッリングし得る時間が延長され、クリー
ニングの回数を減少させることができ、生産性が著しく
向上する。Effects of the Invention According to the present invention as described above, the time during which continuous sputtering can be performed can be extended by the extremely simple means of roughening a part of the target surface or the surfaces of the target and backing plate. This reduces the number of cleaning operations and significantly improves productivity.
Claims (1)
の全部又は一部あるいはボンディング面を除くターゲッ
ト表面とそのバッキングプレートのスパッタリングの雰
囲気にさらされる表面の全部又は一部を粗面としたこと
を特徴とするスパッタリング用ターゲット。[Claim 1] All or part of the target surface excluding the bonding surface, or the target surface excluding the bonding surface and its backing plate, which is exposed to the sputtering atmosphere, is characterized by having a rough surface. Target for sputtering.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8913291A JPH04301074A (en) | 1991-03-29 | 1991-03-29 | Target for sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8913291A JPH04301074A (en) | 1991-03-29 | 1991-03-29 | Target for sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04301074A true JPH04301074A (en) | 1992-10-23 |
Family
ID=13962356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8913291A Pending JPH04301074A (en) | 1991-03-29 | 1991-03-29 | Target for sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04301074A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012067355A (en) * | 2010-09-24 | 2012-04-05 | Kojundo Chem Lab Co Ltd | Method for manufacturing back plate |
JP5074628B1 (en) * | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | Indium sputtering target and method for manufacturing the same |
CN104369113A (en) * | 2013-08-16 | 2015-02-25 | 宁波江丰电子材料股份有限公司 | Target material sand blasting clamp and target material sand blasting method |
US9023487B2 (en) | 2011-09-21 | 2015-05-05 | Jx Nippon Mining & Metals Corporation | Laminated structure and method for producing the same |
US9139900B2 (en) | 2011-03-01 | 2015-09-22 | JX Nippon Mining Metals Corporation | Indium target and manufacturing method thereof |
US9490108B2 (en) | 2010-09-01 | 2016-11-08 | Jx Nippon Mining & Metals Corporation | Indium target and method for manufacturing same |
US9761421B2 (en) | 2012-08-22 | 2017-09-12 | Jx Nippon Mining & Metals Corporation | Indium cylindrical sputtering target and manufacturing method thereof |
US9922807B2 (en) | 2013-07-08 | 2018-03-20 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
-
1991
- 1991-03-29 JP JP8913291A patent/JPH04301074A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9490108B2 (en) | 2010-09-01 | 2016-11-08 | Jx Nippon Mining & Metals Corporation | Indium target and method for manufacturing same |
JP2012067355A (en) * | 2010-09-24 | 2012-04-05 | Kojundo Chem Lab Co Ltd | Method for manufacturing back plate |
US9139900B2 (en) | 2011-03-01 | 2015-09-22 | JX Nippon Mining Metals Corporation | Indium target and manufacturing method thereof |
US9023487B2 (en) | 2011-09-21 | 2015-05-05 | Jx Nippon Mining & Metals Corporation | Laminated structure and method for producing the same |
JP5074628B1 (en) * | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | Indium sputtering target and method for manufacturing the same |
WO2013103029A1 (en) * | 2012-01-05 | 2013-07-11 | Jx日鉱日石金属株式会社 | Indium sputtering target, and method for producing same |
EP2772564A4 (en) * | 2012-01-05 | 2015-08-19 | Jx Nippon Mining & Metals Corp | Indium sputtering target, and method for producing same |
US9758860B2 (en) | 2012-01-05 | 2017-09-12 | Jx Nippon Mining & Metals Corporation | Indium sputtering target and method for manufacturing same |
US9761421B2 (en) | 2012-08-22 | 2017-09-12 | Jx Nippon Mining & Metals Corporation | Indium cylindrical sputtering target and manufacturing method thereof |
US9922807B2 (en) | 2013-07-08 | 2018-03-20 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
CN104369113A (en) * | 2013-08-16 | 2015-02-25 | 宁波江丰电子材料股份有限公司 | Target material sand blasting clamp and target material sand blasting method |
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