JPH01159368A - Deposited film forming device - Google Patents

Abstract

PURPOSE:To reduce the frequency of the cleaning of a shield member by forming a metal layer highly adhesive to the shield member and deposited film material and liberating only a small amt. of gas on the surface of the shield member for preventing the deposition of the film material. CONSTITUTION:The surfaces of the shield members 1 such as a deposition preventing plate 4 and a shutter 5 are sandblasted, and then cleaned with a solvent, etc., before use. The metal layer 2 is formed of the surfaces of the members 1 on which a film is deposited in a vapor-deposition device or a sputtering device. The members are set in the deposited film forming device, and a desired deposited film is laminated on a substrate. Although a deposited film 3 is also laminated on the metal layer 2, the deposited film 3 is formed with good adhesion on the metal layer 2 closely attached to the member 1, and the thickness of the film to be released can be increased. Accordingly, the frequency of the cleaning of the member 1 is reduced, and loss of time in the film forming stage can be reduced. Al, Cr, copper, etc., can be exemplified as the metal for the layer 2.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a deposited film forming apparatus, and more particularly to a deposited film forming apparatus provided with a shielding member for preventing deposition film substances from adhering.

[Prior Art] Conventionally, deposited film forming apparatuses for forming a deposited film on a substrate include a vacuum evaporation apparatus and a sputtering apparatus.

CVD devices, MBE devices, etc. are known. Among these, vacuum evaporation equipment and sputtering equipment are relatively often used.

These machines include batch-type machines and in-line machines equipped with a load rotor chamber.

All of these devices have the problem that if the deposited film is formed for a long time, the vaporized material will accumulate thickly on the inner wall of the device and eventually peel off, and sometimes when it comes off, it will break into pieces and cause damage inside the device. It may also scatter and cause dust. Therefore, to prevent this situation from occurring, it is usually necessary to break the vacuum from time to time to manually remove the deposited film and clean the inside of the device.

At this time, if the directly deposited film adheres to the inner wall of the device body, it is often impossible to remove the deposited film, so a removable shielding plate called an adhesion prevention plate is usually provided to cover the inner wall of the vacuum device. Then, clean the deposited film that has adhered temporarily. As the anti-adhesion plate, a material that is heat resistant and releases little gas in a vacuum, such as stainless steel, is used. When using the anti-adhesion plate, it is usually coated with a solvent or a solvent in order to reduce the number of times it has to be cleaned. Treatments such as cleaning and sandblasting are performed to prevent the deposited film from peeling off as much as possible.

[Problems to be Solved by the Invention] However, even if the above-mentioned treatment is performed, if the internal stress of the deposited film is large, for example, if the film is made of a dielectric material and is deposited using a sputtering device, it will be difficult to compare There was a problem in that the film peeled off prematurely, requiring frequent cleaning by sandblasting.

This tendency is particularly strong in the case of batch-type deposited film forming equipment, but even in the case of in-line methods, there is a certain limit, and the film peels off faster than the replacement cycle due to target wear. , a special process for cleaning the inside of the deposition chamber is required. Therefore, there was a problem that the film forming process was stopped, resulting in a large time loss.

[Means for Solving the Problems] The deposited film forming apparatus of the present invention is provided with a shielding member for preventing the adhesion of deposited film substances. It is characterized by forming a metal layer that has good adhesion to the member and the deposited film material (and releases less gas).

[Function] The deposited film forming apparatus of the present invention has good adhesion to the surface E of a shielding member such as an adhesion prevention plate or a shutter, has a melting point higher than the heating temperature during film formation, and can be used in a vacuum. By providing a metal layer that releases less gas and has good adhesion to the attached film, the film can be removed thicker, reducing the number of cleaning operations and reducing time loss in the film formation process. It's a little worse.

[Example] Hereinafter, an example of the present invention will be described in detail using the drawings.

FIG. 1 is a sectional view showing the structure of a shielding member used in the present invention.

First, before use, the surface of the shielding member 1, such as an adhesion prevention plate or a shutter, is cleaned by sandblasting and then solvent cleaning. Note that other cleaning methods and cleaning methods may be used.

Thereafter, a metal layer 2 is formed on the surface to which the deposited film will be attached in another vapor deposition device or sputtering device.

Next, a shielding member such as an adhesion prevention plate or a shutter is attached to the original deposited film forming apparatus, and a desired deposited film is laminated on the substrate. At this time, the deposited film 3 is also laminated on the metal layer 2.

If a source of metal material or sputtering is found in the device in which a shielding member such as an adhesion prevention plate or a shutter is installed, after forming the metal layer 2 using it, the desired material is continuously deposited without breaking the vacuum. A deposited film can be laminated onto a substrate.

The metal layer 2 is made of a material whose melting point is higher than the stomach temperature when the deposited film forming apparatus is used, and which releases less gas in a vacuum.
Materials with low vapor pressure are used.

Preferred materials for the metal layer 2 include A1. Cr, Cu
etc.

The thickness of the metal layer 2 is preferably about 1,000 to 10,000 people, since the thicker it is, the better it functions as a buffer material, but if it is too thick, the effects of gas adsorbed by this metal layer, etc. are considered.

Hereinafter, an example of a deposited film forming apparatus using the shielding member 11 will be described.

(Example 1) A silicon nitride film is formed as a dielectric film in a batch type sputtering apparatus.

FIG. 2 is a schematic diagram of a batch type bipolar sputtering apparatus.

In the figure, 9 is a vacuum chamber, 6 is a silicon nitride target, 7 is a substrate holder that fixes a substrate 8 on which a deposited film is to be formed, 10 is a shield ring that shields the target 6, and 11 is an exhaust port. Vacuum chamber 9 is connected to a vacuum pump.

Silicon nitride target 6 shutter (SUS304
'32) The anti-adhesion plate (manufactured by 5LIS304) 4 installed close to the vacuum chamber 9 and the 81
Approximately 5,000 layers of SiN were coated on the side where SiN was to be thickly adhered.

After these were installed at predetermined positions in the vacuum chamber 9, a silicon nitride film was deposited on the substrate 8, and the state of the silicon nitride film deposited on the shutter 5 and the deposition prevention plate 4 was examined.

At this time, since it was a batch type, the inside of the equipment was exposed several times.

When the thickness of the peeled SiN film was measured, it was approximately 5.0 μm. As a comparative example, the same observation was made for the case where no AI was coated, and the thickness of the peeled SiN film was measured to be about 2 μm.

(Example 2) In an in-line sputtering apparatus equipped with a load sputtering chamber, an A1 target and a SiN target as a dielectric film target were provided in the sputtering chamber, and an AI film, 5iNII! ! Stack them.

FIG. 3 is a schematic diagram of the in-line sputtering apparatus. Note that for the sake of simplicity, only one target is shown here, and the same components as those in the batch type bipolar sputtering apparatus shown in FIG. 2 are given the same reference numerals.

In the figure, 12 is a sputtering chamber, 6 is a moon target, 7 is a substrate holder for fixing a substrate 8 on which a deposited film is to be formed, 13 is a load lock chamber, Vl, V2. V3 is load lock chamber 13. This is a vacuum valve provided between the load lock chamber 13 and the sputter chamber 12 at 12 degrees of the sputter chamber.

The load lock chamber 13 and the sputtering chamber 12 are connected to a vacuum valve V.
l, connected to the vacuum pump through V3. A shutter 5 is provided at the L portion of the At target 6, and an adhesion prevention plate 4 is provided close to the inner wall of the sputtering chamber 12.

With the shutter of the SiN target closed (not shown), first use the At target 6 to evaporate 81, and form an A1 film on the substrate 8 to a thickness of ~1000 nm. do. Thereafter, a SiN film is deposited on the substrate 8 according to a predetermined process without leaking inside the sputtering chamber. At this time, a SiN target (size φ5
The deposited film could be formed by performing leakage only twice for cleaning the adhesion prevention plate until the thickness of the adhesion prevention plate (6 mm) was consumed. As a comparative example, the same procedure was carried out in the case where the A1 film was not coated, but it was necessary to perform leakage five times to clean the anti-adhesion plate.

[Effects of the Invention] As explained above in detail, according to the deposited film forming apparatus according to the present invention, by forming a metal layer on shielding members such as an anti-adhesive plate and a shutter, the number of times they can be recycled can be greatly increased. In addition, it is possible to reduce the time loss in the film forming process, lower running costs, and improve production efficiency6.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing the structure of a shielding member used in the present invention. FIG. 2 is a schematic diagram of a batch type bipolar sputtering apparatus. FIG. 3 is a schematic diagram of the in-line sputtering apparatus. 1: Shielding member, 2: Metal layer, 3: Deposited film, 4: Deposition prevention plate,
5: Shutter. Agent Patent Attorney Johei Yamashita Figure 1 Figure 2

Claims (1)

[Scope of Claims] A deposited film forming apparatus provided with a shielding member for preventing deposition of a deposited film substance, wherein a surface of the shielding member is provided with a material that has good adhesion to the shielding member and the deposited film substance, and that is capable of being released. A deposited film forming apparatus characterized by forming a metal layer with little gas.