JPS6323664B2 - - Google Patents
Info
- Publication number
- JPS6323664B2 JPS6323664B2 JP11838077A JP11838077A JPS6323664B2 JP S6323664 B2 JPS6323664 B2 JP S6323664B2 JP 11838077 A JP11838077 A JP 11838077A JP 11838077 A JP11838077 A JP 11838077A JP S6323664 B2 JPS6323664 B2 JP S6323664B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- semiconductor region
- gate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 27
- 238000005036 potential barrier Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 230000001747 exhibiting effect Effects 0.000 claims description 7
- 239000000969 carrier Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000006698 induction Effects 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11838077A JPS5451784A (en) | 1977-10-01 | 1977-10-01 | Insulated gate electrostatic induction transistor |
| DE19782801085 DE2801085A1 (de) | 1977-01-11 | 1978-01-11 | Statischer induktionstransistor |
| US06/814,030 US4814839A (en) | 1977-01-11 | 1985-12-23 | Insulated gate static induction transistor and integrated circuit including same |
| US07/225,870 US4994872A (en) | 1977-01-11 | 1988-07-29 | Insulated gate static induction transistor and integrated circuit including same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11838077A JPS5451784A (en) | 1977-10-01 | 1977-10-01 | Insulated gate electrostatic induction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5451784A JPS5451784A (en) | 1979-04-23 |
| JPS6323664B2 true JPS6323664B2 (US07922777-20110412-C00004.png) | 1988-05-17 |
Family
ID=14735259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11838077A Granted JPS5451784A (en) | 1977-01-11 | 1977-10-01 | Insulated gate electrostatic induction transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5451784A (US07922777-20110412-C00004.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02133261A (ja) * | 1988-11-11 | 1990-05-22 | Diesel Kiki Co Ltd | 車載電子制御装置の故障検出装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2121600A (en) * | 1982-05-10 | 1983-12-21 | Philips Electronic Associated | Gate controlled unipolar hot-carrier transistors |
-
1977
- 1977-10-01 JP JP11838077A patent/JPS5451784A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02133261A (ja) * | 1988-11-11 | 1990-05-22 | Diesel Kiki Co Ltd | 車載電子制御装置の故障検出装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5451784A (en) | 1979-04-23 |
