JPS5451784A - Insulated gate electrostatic induction transistor - Google Patents
Insulated gate electrostatic induction transistorInfo
- Publication number
- JPS5451784A JPS5451784A JP11838077A JP11838077A JPS5451784A JP S5451784 A JPS5451784 A JP S5451784A JP 11838077 A JP11838077 A JP 11838077A JP 11838077 A JP11838077 A JP 11838077A JP S5451784 A JPS5451784 A JP S5451784A
- Authority
- JP
- Japan
- Prior art keywords
- insulated gate
- electrostatic induction
- induction transistor
- gate electrostatic
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11838077A JPS5451784A (en) | 1977-10-01 | 1977-10-01 | Insulated gate electrostatic induction transistor |
| DE19782801085 DE2801085A1 (en) | 1977-01-11 | 1978-01-11 | STATIC INDUCTION TRANSISTOR |
| US06/814,030 US4814839A (en) | 1977-01-11 | 1985-12-23 | Insulated gate static induction transistor and integrated circuit including same |
| US07/225,870 US4994872A (en) | 1977-01-11 | 1988-07-29 | Insulated gate static induction transistor and integrated circuit including same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11838077A JPS5451784A (en) | 1977-10-01 | 1977-10-01 | Insulated gate electrostatic induction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5451784A true JPS5451784A (en) | 1979-04-23 |
| JPS6323664B2 JPS6323664B2 (en) | 1988-05-17 |
Family
ID=14735259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11838077A Granted JPS5451784A (en) | 1977-01-11 | 1977-10-01 | Insulated gate electrostatic induction transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5451784A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58206164A (en) * | 1982-05-10 | 1983-12-01 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Semiconductor device and method of producing same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02133261A (en) * | 1988-11-11 | 1990-05-22 | Diesel Kiki Co Ltd | Trouble detecting device for on-vehicle electronic control unit |
-
1977
- 1977-10-01 JP JP11838077A patent/JPS5451784A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58206164A (en) * | 1982-05-10 | 1983-12-01 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Semiconductor device and method of producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6323664B2 (en) | 1988-05-17 |
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