JPS63236336A - Die-bonding method for semiconductor device - Google Patents

Die-bonding method for semiconductor device

Info

Publication number
JPS63236336A
JPS63236336A JP62071282A JP7128287A JPS63236336A JP S63236336 A JPS63236336 A JP S63236336A JP 62071282 A JP62071282 A JP 62071282A JP 7128287 A JP7128287 A JP 7128287A JP S63236336 A JPS63236336 A JP S63236336A
Authority
JP
Japan
Prior art keywords
pellet
silver paste
pin
coating
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62071282A
Other languages
Japanese (ja)
Inventor
Keiki Eto
衛藤　敬基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62071282A priority Critical patent/JPS63236336A/en
Publication of JPS63236336A publication Critical patent/JPS63236336A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743—Apparatus for manufacturing layer connectors

Abstract

PURPOSE:To prevent the generation of unevenness in coating of silver paste and the like by a method wherein, when a pellet is absorbed and it is picked out by exfoliation from a sheet, the resin paste containing inorganic fillers is coated on the rear of a pellet using a thrusting-up pin and a coating pin. CONSTITUTION:The semiconductor pellet 3, which is separated individually, is exfoliated from a sheet 4 by a collet 1 while the sheet 4 is being broken through from the rear of an electron sheet 4 (material such as pilypropylene, polyethylene and the like) by the thrusting-up pin 6. At this time, silver paste 7 is coated on the rear of the pellet 3 from a silver paste coating hole 5 at the top point of the thrusting-up pin 6. Then, the pellet 3 is fixed on the island 10 of a lead frame 11 using the collet. Besides, the silver paste 7 is hardened by baking the pellet 3, and the pellet 3 is fixed completely to the island 10. Moreover, in this kind of process, the coating of silver paste by stamping on the lead frame side can be performed simultaneously besides the coating of the silver paste.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ペレットをペレット取付部に接着材料を
用いて固定する半導体装置のダイボンディング方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a die bonding method for a semiconductor device in which a semiconductor pellet is fixed to a pellet mounting portion using an adhesive material.

〔従来の技術〕[Conventional technology]

従来、リードフレームのペレット取付部（以下アイラン
ドと称す）に半導体ペレットを固定する技術の一つに銀
ペーストによる固定方法がある。Conventionally, one of the techniques for fixing a semiconductor pellet to a pellet attachment portion (hereinafter referred to as an island) of a lead frame is a fixing method using silver paste.

例えば、第３図（ａ）〜（Ｃ）は従来のかかる方法の一
つを説明するための工程順に示した半導体装置の断面図
である。For example, FIGS. 3A to 3C are cross-sectional views of a semiconductor device shown in order of steps to explain one of the conventional methods.

第３図（ａ）、（ｂ）に示すように、リードフレーム１
１のアイランド１０上に銀ペースト７をスタンプ１２に
より塗布する。As shown in FIGS. 3(a) and (b), the lead frame 1
Silver paste 7 is applied onto one island 10 by a stamp 12.

次に、第３図（Ｃ）に示すように、前記スタンプによる
塗布後、コレット１でペレット３を真空吸着保持して前
記スタンプで塗布した銀ペースト７上に取り付け、これ
をベーキングし銀ペースト７を硬化させペレット３をア
イランド１０上に完全に固定する方法である。Next, as shown in FIG. 3(C), after coating with the stamp, the pellet 3 is held by vacuum suction with a collet 1 and attached onto the silver paste 7 coated with the stamp, and this is baked and the silver paste 7 In this method, the pellet 3 is completely fixed on the island 10 by curing the pellet.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の半導体装置のダイボンディング方法は、
アイランド上へスタンプにより銀ペーストを塗布するた
めチップサイズの大きい大ペレットにおいては塗布むら
が生じる。従って、ペレットの外周部分に比べ中央部分
の銀ペーストの濡れ性が不十分となり、濡れ不良が生じ
るという欠点がある。この銀ペースｌ−の濡れ不良は、
リードフレームのアイランド上にペレットを固定しなあ
と、その後の半導体装置の製造工程上でボンディング接
続等の際に加わる力などにより、ペレットがはがれたり
する問題をもひき起してしまう。また、逆に銀ペースト
を必要以上に多くした場合は、ペレットの下面のアイラ
ンド上で銀ペーストがはみ出し不測の事態をひき起しか
ねない。The conventional die bonding method for semiconductor devices described above is as follows:
Since the silver paste is applied onto the islands by stamping, uneven coating occurs in large pellets with large chip sizes. Therefore, there is a drawback that the wettability of the silver paste in the central portion of the pellet is insufficient compared to the outer peripheral portion, resulting in poor wetting. This poor wetting of silver paste l- is caused by
After the pellet is fixed on the island of the lead frame, there is a problem that the pellet may be peeled off due to the force applied during bonding and the like in the subsequent manufacturing process of the semiconductor device. On the other hand, if the amount of silver paste is increased more than necessary, the silver paste may protrude onto the island on the bottom surface of the pellet, causing an unexpected situation.

本発明の目的は、かかる銀ベーストなどの塗布むらを生
じないような半導体装置のダイボンディング方法を提供
することにある。An object of the present invention is to provide a die bonding method for semiconductor devices that does not cause uneven coating of silver base or the like.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体装置のダイボンディング方法は、個々に
分解された半導体ペレットの裏面から突き上げピンもし
くは塗布ピンにより突き上げコレットで真空吸着する際
に、突き上げピンもしくは塗布ピン先端から銀ペースト
をペレット裏面へ塗布するように行なわれる。In the die bonding method for semiconductor devices of the present invention, silver paste is applied from the tip of the push-up pin or coating pin to the back surface of the pellet when vacuum suction is performed using a push-up collet using a push-up pin or coating pin from the back surface of each disassembled semiconductor pellet. It is done as it should be done.

本発明はかかるペレット裏面への銀ペーストの塗布によ
り、ペレットのアイランド上への濡れ性を向上させるも
のである。The present invention improves the wettability of the pellet onto the islands by applying silver paste to the back surface of the pellet.

〔実施例〕〔Example〕

次に、本発明の実施例を図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.

第１図（ａ）〜（Ｃ）は本発明の第一の実施例を説明す
るための工程順に示した半導体ペレット等の断面図であ
る。FIGS. 1(a) to 1(C) are cross-sectional views of a semiconductor pellet, etc., shown in order of steps for explaining a first embodiment of the present invention.

第１図（ａ）、（ｂ）に示すように、個々に分離された
半導体ペレット３をエレクトロンシート（材質としては
ポリプロピレン、ポリエチレン等）４の裏面から突き上
げピン６によりシート４を突き破りながら吸着コレット
１によりペレット３をシート４から剥離させる。このと
き、突き上げピン６の最上点にて、銀ペースト塗布穴５
がら銀ペースト７をペレット３の裏面へ塗布する。As shown in FIGS. 1(a) and 1(b), the individually separated semiconductor pellets 3 are pushed up from the back side of the electron sheet (made of polypropylene, polyethylene, etc.) 4, and the sheet 4 is pierced by the pin 6, while the suction collet is being used. 1, the pellet 3 is peeled off from the sheet 4. At this time, at the highest point of the push-up pin 6, the silver paste application hole 5
A silver paste 7 is applied to the back side of the pellet 3.

次に、第１図（Ｃ）に示すように、前記コレットにより
リードフレーム１１のアイランド１０上にペレット３を
取り付ける。更に、それをベーキングして銀ペースト７
を硬化させペレット３をアイランド１０に完全に固定す
る。尚、かがる工程において、前記銀ペーストの塗布の
ζｊかにリードフレーム側へスタンプによる銀ペースト
の塗布を同時に行なうことも可能である。Next, as shown in FIG. 1(C), the pellet 3 is attached onto the island 10 of the lead frame 11 using the collet. Furthermore, bake it and make silver paste 7
is cured to completely fix the pellet 3 to the island 10. Incidentally, in the darning step, it is also possible to simultaneously apply the silver paste to the lead frame side using a stamp while applying the silver paste.

第２図（ａ）、（ｂ）は本発明の第二の実施例を説明す
るための工程順に示した半導体ペレット等の断面図であ
る。FIGS. 2(a) and 2(b) are cross-sectional views of a semiconductor pellet, etc., shown in the order of steps for explaining a second embodiment of the present invention.

第２図（ａ＞、（ｂ）に示すように、この実施例におい
ては、突き上げピン６とコレット１でシーＩ−４を突き
破ることなく、完全にペレット３をシート４から剥離さ
れた後に銀ペースト塗布用ピン８によりシートを突き破
りペレット３の裏面へ銀ペースト７を塗布する方法であ
り、塗布用ピン８の形状により銀ペースト７の塗布量を
コントロールすることが可能である。As shown in FIGS. 2(a) and (b), in this embodiment, the push-up pin 6 and collet 1 do not break through the sheet I-4, and after the pellet 3 is completely peeled off from the sheet 4, the silver is removed. In this method, the silver paste 7 is applied to the back surface of the pellet 3 by piercing the sheet with a paste application pin 8, and the amount of silver paste 7 applied can be controlled by the shape of the application pin 8.

かかる突き上げピンと銀ペースト塗布用ピンの二段階操
作により、ペレット裏面の銀ペーストは一層均一化され
る。Through this two-step operation of the push-up pin and the silver paste application pin, the silver paste on the back surface of the pellet is made more uniform.

尚、上述した二つの実施例においては、ペレットの下面
を接着する手段として銀ペーストを用いて説明したが、
その他のペーストでも可能なことは言うまでもない。In the above two embodiments, silver paste was used as a means for bonding the bottom surface of the pellet.
Needless to say, other pastes are also possible.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は半導体ペレットをリード
フレームのアイランド上へ固定する際にペレット裏面へ
銀ペーストを突き上げピンまたは銀ペースト塗布用ピン
で塗布することにより、大きなペレットでも銀ペースト
をペレット裏面く主として中央部）へ十分に塗布し、ア
イランド上へのダイボンディングの際の濡れ性を向上さ
せる効果がある。また、本発明は従来のリードフレーム
のアイランド上へスタンプにより、銀ペーストを塗布す
ることを兼用すれば、ギの結果はより一層有効なものと
なる。As explained above, in the present invention, when fixing a semiconductor pellet onto an island of a lead frame, the silver paste is applied to the back surface of the pellet using a push-up pin or a silver paste application pin. It has the effect of improving wettability during die bonding onto the island by applying it sufficiently to the center (mainly the central part). Furthermore, if the present invention is also used to apply silver paste onto the islands of the conventional lead frame by stamping, the results will be even more effective.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）〜（Ｃ）は本発明の第一の実施例を説明す
るための工程順に示した半導体ペレット等の断面図、第
２図（ａ＞、（ｂ）は本発明の第二の実施例を説明する
ための工程順に示した半導体ペレット等の断面図、第３
図（ａ）〜（Ｃ）は従来の一例を説明するための工程順
に示した半導体装置の断面図である。 １・・・コレット、２・・・保護カバー、３・・・／＜
Ｌ／ジット４・・・エレクトロンシート、５・・・銀ペ
ースト塗布穴、６・・・突き上げピン、７・・・銀ペー
スト、８・・・銀ペースト塗布用ピン、１０・・・アイ
ランド、１１・・・リードフレーム。 躬１図 Ｈ１０ ８３図FIGS. 1(a) to (C) are cross-sectional views of semiconductor pellets, etc. shown in the order of steps for explaining the first embodiment of the present invention, and FIGS. A cross-sectional view of a semiconductor pellet, etc. shown in the order of steps for explaining the second embodiment, and the third embodiment.
Figures (a) to (C) are cross-sectional views of a semiconductor device shown in the order of steps to explain a conventional example. 1...collet, 2...protective cover, 3.../<
L/Jit 4... Electron sheet, 5... Silver paste application hole, 6... Push-up pin, 7... Silver paste, 8... Silver paste application pin, 10... Island, 11 ···Lead frame. 1 figure H10 83 figure

Claims (1)

【特許請求の範囲】[Claims] 　半導体ペレットをリードフレームのペレット取付部に
固定する半導体装置のダイボンディング方法において、
前記ペレットをコレットで吸着しシートから剥離して取
り出す際、前記ペレット裏面へ無機充填剤を含む樹脂ペ
ーストを突き上げピンか塗布用ピンのいずれかで塗布す
ることを特徴とする半導体装置のダイボンディング方法
。In a die bonding method for semiconductor devices in which a semiconductor pellet is fixed to a pellet attachment part of a lead frame,
A die bonding method for a semiconductor device, characterized in that when the pellet is adsorbed by a collet and peeled off from the sheet to be taken out, a resin paste containing an inorganic filler is applied to the back surface of the pellet using either a push-up pin or a coating pin. .
JP62071282A 1987-03-24 1987-03-24 Die-bonding method for semiconductor device Pending JPS63236336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62071282A JPS63236336A (en) 1987-03-24 1987-03-24 Die-bonding method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62071282A JPS63236336A (en) 1987-03-24 1987-03-24 Die-bonding method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS63236336A true JPS63236336A (en) 1988-10-03

Family

ID=13456193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62071282A Pending JPS63236336A (en) 1987-03-24 1987-03-24 Die-bonding method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS63236336A (en)

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