JPS63235468A - 薄膜形成方法およびその装置 - Google Patents
薄膜形成方法およびその装置Info
- Publication number
- JPS63235468A JPS63235468A JP62110613A JP11061387A JPS63235468A JP S63235468 A JPS63235468 A JP S63235468A JP 62110613 A JP62110613 A JP 62110613A JP 11061387 A JP11061387 A JP 11061387A JP S63235468 A JPS63235468 A JP S63235468A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- reactive gas
- gas
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 150000002500 ions Chemical class 0.000 claims abstract description 22
- 238000007740 vapor deposition Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 68
- 238000010894 electron beam technology Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 abstract description 9
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 239000000284 extract Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- -1 Al2O8 Chemical compound 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003340 mental effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870011455A KR900008155B1 (ko) | 1986-10-29 | 1987-10-15 | 박막형성방법 및 그 장치 |
| CN87107161A CN1019513B (zh) | 1986-10-29 | 1987-10-21 | 化合物薄膜形成装置 |
| CA000550340A CA1308689C (en) | 1986-10-29 | 1987-10-27 | Method and apparatus for forming a thin film |
| DE3789753T DE3789753T2 (de) | 1986-10-29 | 1987-10-27 | Verfahren und Anordnung zur Herstellung einer dünnen Schicht. |
| EP87309497A EP0266178B1 (en) | 1986-10-29 | 1987-10-27 | Method and apparatus for forming a thin film |
| US07/113,165 US4805555A (en) | 1986-10-29 | 1987-10-27 | Apparatus for forming a thin film |
| US07/238,114 US4959242A (en) | 1986-10-29 | 1988-08-30 | Method for forming a thin film |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25584886 | 1986-10-29 | ||
| JP61-255848 | 1986-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63235468A true JPS63235468A (ja) | 1988-09-30 |
| JPH0543786B2 JPH0543786B2 (enrdf_load_stackoverflow) | 1993-07-02 |
Family
ID=17284431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62110613A Granted JPS63235468A (ja) | 1986-10-29 | 1987-05-08 | 薄膜形成方法およびその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63235468A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5582879A (en) * | 1993-11-08 | 1996-12-10 | Canon Kabushiki Kaisha | Cluster beam deposition method for manufacturing thin film |
-
1987
- 1987-05-08 JP JP62110613A patent/JPS63235468A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5582879A (en) * | 1993-11-08 | 1996-12-10 | Canon Kabushiki Kaisha | Cluster beam deposition method for manufacturing thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0543786B2 (enrdf_load_stackoverflow) | 1993-07-02 |
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