JPS63235468A - 薄膜形成方法およびその装置 - Google Patents

薄膜形成方法およびその装置

Info

Publication number
JPS63235468A
JPS63235468A JP62110613A JP11061387A JPS63235468A JP S63235468 A JPS63235468 A JP S63235468A JP 62110613 A JP62110613 A JP 62110613A JP 11061387 A JP11061387 A JP 11061387A JP S63235468 A JPS63235468 A JP S63235468A
Authority
JP
Japan
Prior art keywords
substrate
thin film
gas
vapor
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62110613A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543786B2 (enrdf_load_stackoverflow
Inventor
Hiromoto Ito
弘基 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to KR1019870011455A priority Critical patent/KR900008155B1/ko
Priority to CN87107161A priority patent/CN1019513B/zh
Priority to EP87309497A priority patent/EP0266178B1/en
Priority to CA000550340A priority patent/CA1308689C/en
Priority to US07/113,165 priority patent/US4805555A/en
Priority to DE3789753T priority patent/DE3789753T2/de
Priority to US07/238,114 priority patent/US4959242A/en
Publication of JPS63235468A publication Critical patent/JPS63235468A/ja
Publication of JPH0543786B2 publication Critical patent/JPH0543786B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP62110613A 1986-10-29 1987-05-08 薄膜形成方法およびその装置 Granted JPS63235468A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019870011455A KR900008155B1 (ko) 1986-10-29 1987-10-15 박막형성방법 및 그 장치
CN87107161A CN1019513B (zh) 1986-10-29 1987-10-21 化合物薄膜形成装置
EP87309497A EP0266178B1 (en) 1986-10-29 1987-10-27 Method and apparatus for forming a thin film
CA000550340A CA1308689C (en) 1986-10-29 1987-10-27 Method and apparatus for forming a thin film
US07/113,165 US4805555A (en) 1986-10-29 1987-10-27 Apparatus for forming a thin film
DE3789753T DE3789753T2 (de) 1986-10-29 1987-10-27 Verfahren und Anordnung zur Herstellung einer dünnen Schicht.
US07/238,114 US4959242A (en) 1986-10-29 1988-08-30 Method for forming a thin film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25584886 1986-10-29
JP61-255848 1986-10-29

Publications (2)

Publication Number Publication Date
JPS63235468A true JPS63235468A (ja) 1988-09-30
JPH0543786B2 JPH0543786B2 (enrdf_load_stackoverflow) 1993-07-02

Family

ID=17284431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62110613A Granted JPS63235468A (ja) 1986-10-29 1987-05-08 薄膜形成方法およびその装置

Country Status (1)

Country Link
JP (1) JPS63235468A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582879A (en) * 1993-11-08 1996-12-10 Canon Kabushiki Kaisha Cluster beam deposition method for manufacturing thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582879A (en) * 1993-11-08 1996-12-10 Canon Kabushiki Kaisha Cluster beam deposition method for manufacturing thin film

Also Published As

Publication number Publication date
JPH0543786B2 (enrdf_load_stackoverflow) 1993-07-02

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