JPH0543786B2 - - Google Patents
Info
- Publication number
- JPH0543786B2 JPH0543786B2 JP11061387A JP11061387A JPH0543786B2 JP H0543786 B2 JPH0543786 B2 JP H0543786B2 JP 11061387 A JP11061387 A JP 11061387A JP 11061387 A JP11061387 A JP 11061387A JP H0543786 B2 JPH0543786 B2 JP H0543786B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- gas
- vapor
- ionized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 50
- 239000010409 thin film Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 25
- 150000002500 ions Chemical class 0.000 claims description 21
- 238000010894 electron beam technology Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000605 extraction Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870011455A KR900008155B1 (ko) | 1986-10-29 | 1987-10-15 | 박막형성방법 및 그 장치 |
| CN87107161A CN1019513B (zh) | 1986-10-29 | 1987-10-21 | 化合物薄膜形成装置 |
| CA000550340A CA1308689C (en) | 1986-10-29 | 1987-10-27 | Method and apparatus for forming a thin film |
| DE3789753T DE3789753T2 (de) | 1986-10-29 | 1987-10-27 | Verfahren und Anordnung zur Herstellung einer dünnen Schicht. |
| EP87309497A EP0266178B1 (en) | 1986-10-29 | 1987-10-27 | Method and apparatus for forming a thin film |
| US07/113,165 US4805555A (en) | 1986-10-29 | 1987-10-27 | Apparatus for forming a thin film |
| US07/238,114 US4959242A (en) | 1986-10-29 | 1988-08-30 | Method for forming a thin film |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25584886 | 1986-10-29 | ||
| JP61-255848 | 1986-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63235468A JPS63235468A (ja) | 1988-09-30 |
| JPH0543786B2 true JPH0543786B2 (enrdf_load_stackoverflow) | 1993-07-02 |
Family
ID=17284431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62110613A Granted JPS63235468A (ja) | 1986-10-29 | 1987-05-08 | 薄膜形成方法およびその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63235468A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5582879A (en) * | 1993-11-08 | 1996-12-10 | Canon Kabushiki Kaisha | Cluster beam deposition method for manufacturing thin film |
-
1987
- 1987-05-08 JP JP62110613A patent/JPS63235468A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63235468A (ja) | 1988-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4805555A (en) | Apparatus for forming a thin film | |
| US4799454A (en) | Apparatus for forming a thin film | |
| US4657774A (en) | Method for thin film formation | |
| US5054421A (en) | Substrate cleaning device | |
| JP3386175B2 (ja) | ガスクラスターイオン援用による化合物薄膜の形成方法 | |
| US5089289A (en) | Method of forming thin films | |
| JPH0543786B2 (enrdf_load_stackoverflow) | ||
| JP3503787B2 (ja) | 薄膜の形成方法 | |
| KR900008155B1 (ko) | 박막형성방법 및 그 장치 | |
| JPS60251269A (ja) | イオンプレ−テイング方法および装置 | |
| JPH05255838A (ja) | 酸化物薄膜形成方法及びその装置 | |
| JPS63278218A (ja) | 化合物薄膜形成装置 | |
| JPS6311662A (ja) | 化合物薄膜形成装置 | |
| JPH05179433A (ja) | 集積回路、その製造方法およびその薄膜形成装置 | |
| JPS63166960A (ja) | ＳｉＯ↓２薄膜形成方法 | |
| JPH05171425A (ja) | 化合物薄膜形成装置及び化合物薄膜の形成方法 | |
| JP2889039B2 (ja) | 薄膜形成装置 | |
| JP2594961B2 (ja) | ガスイオン源装置 | |
| JPH03193865A (ja) | ＰｂＯ↓２薄膜の形成方法 | |
| JPH01139758A (ja) | 薄膜蒸着方法および薄膜蒸着装置 | |
| CA1305564C (en) | Substrate cleaning device | |
| JP3169302B2 (ja) | 活性化ガス発生装置 | |
| JPH07100866B2 (ja) | 薄膜形成装置 | |
| JPH02213135A (ja) | 化合物薄膜形成方法 | |
| JPH0586474B2 (enrdf_load_stackoverflow) |