JPS63233077A - Silicon nitride base composite sintered body - Google Patents
Silicon nitride base composite sintered bodyInfo
- Publication number
- JPS63233077A JPS63233077A JP62200640A JP20064087A JPS63233077A JP S63233077 A JPS63233077 A JP S63233077A JP 62200640 A JP62200640 A JP 62200640A JP 20064087 A JP20064087 A JP 20064087A JP S63233077 A JPS63233077 A JP S63233077A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- silicon nitride
- composite sintered
- base composite
- nitride base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 13
- 239000002131 composite material Substances 0.000 title claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、導電性を有する窒化珪素基複合焼結体に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a silicon nitride-based composite sintered body having electrical conductivity.
反応焼結による窒化珪素基焼結体は、Ｓｉ粉末を所定の
形に成形した後、窒素雰囲気中１３００〜１５００℃程
度の温度でＳｉを窒化焼結することにより得られる（例
えば特開昭５０−７５２０７号など）。反応焼結により
得られる焼結体は、焼結時の収縮がほとんとないのが大
きな特徴であり、他方法による緻密な焼結体において問
題となる焼結時の変形。A silicon nitride-based sintered body by reaction sintering can be obtained by forming Si powder into a predetermined shape and then nitriding and sintering the Si at a temperature of about 1300 to 1500°C in a nitrogen atmosphere (for example, as described in Japanese Patent Application Laid-Open No. -75207 etc.). A major feature of the sintered bodies obtained by reaction sintering is that there is almost no shrinkage during sintering, and deformation during sintering is a problem with dense sintered bodies produced by other methods.
焼結残留応力等を回避することができる。また。Sintering residual stress etc. can be avoided. Also.
多孔質であることも一つの大きな特徴である。Another major feature is that it is porous.
しかし、従来の反応焼結窒化珪素基焼結体は、絶縁体で
あるため金属溶融用のるつぼ等の限ら九た用途でしか使
われず電子部品、機械装置等への応用はほとんどなされ
ていない。また反応焼結窒化珪素基焼結体は、常圧焼結
体等で作成した緻密な焼結体と比べれば加工性は良いが
、それでも微細な穴加工等はほとんど行なうことができ
ない。However, since conventional reaction-sintered silicon nitride-based sintered bodies are insulators, they are used only in limited applications such as crucibles for melting metals, and have hardly been applied to electronic parts, mechanical devices, etc. Further, although the reaction-sintered silicon nitride-based sintered body has better workability than a dense sintered body made from an atmospheric pressure sintered body, it is still almost impossible to form minute holes.
本発明の目的は導電性化合物を含み導電性を有する反応
焼結法による窒化珪素基複合焼結体を提供することであ
る。An object of the present invention is to provide a silicon nitride-based composite sintered body produced by a reactive sintering method, which contains a conductive compound and has conductivity.
本発明は導電性化合物を２０〜７０ｖｏ１％含み導電性
を有し、１０％を越える気孔を含むことを特徴とする反
応焼結法による窒化珪素基複合焼結体である。The present invention is a silicon nitride-based composite sintered body produced by a reactive sintering method, which is characterized by containing 20 to 70 vol% of a conductive compound, having conductivity, and containing more than 10% of pores.
ここで導電性化合物としては、窒化珪素基焼結体の持つ
耐熱性を損なわないために高融点の化合物であることが
望ましい。例えばＩＶａ、 Ｖａ、 ＶＩａ族の窒化物
、酸窒化物がこれに相当し望ましいが、反応焼結中にこ
れら窒化物に変化する酸化物、珪化物、水素化物等の化
合物あるいは金属、金属間化合物等を用いることも可能
である。これら化合物の量を２０〜７０ｖｏ１％とする
のは、２０ｖｏ１％未満では、導電性化合物粒子の相互
の接触が不十分であり、導電性を生じないためであり、
７０ｖｏ１％を越えると焼結性が低下し、気孔率が急増
するからである。Here, the conductive compound is preferably a compound with a high melting point so as not to impair the heat resistance of the silicon nitride-based sintered body. For example, nitrides and oxynitrides of groups IVa, Va, and VIa are suitable and desirable, but compounds such as oxides, silicides, and hydrides, or metals and intermetallic compounds that convert into nitrides during reaction sintering are also suitable. It is also possible to use . The reason why the amount of these compounds is set to 20 to 70 vol% is because if it is less than 20 vol%, the mutual contact of the conductive compound particles is insufficient and no conductivity occurs.
This is because if it exceeds 70 vol%, the sinterability will decrease and the porosity will increase rapidly.
原料としては、上記導電性化合物とＳＬが主原料となる
が、これに適宜Ｓ ｉ３ Ｎ ４ ｔサイアロン。The main raw materials are the above-mentioned conductive compound and SL, and optionally Si3N4tsialon.
Ａ１□Ｏ，、ＡＩＮなどの粉末を添加することもできる
。Powders such as A1□O, AIN, etc. can also be added.
また気孔率が１０％を越えるようにするのは、反応焼結
法では気孔率を１０％以下にすることは困蔑であること
、および気孔率１０％以下であると開気孔を利用した用
途に適さなくなるためである。In addition, the reason why the porosity should exceed 10% is that it is difficult to reduce the porosity to less than 10% in the reaction sintering method. This is because it becomes unsuitable for
以下本発明を実施例によりさらに詳しく説明する。 The present invention will be explained in more detail below with reference to Examples.
実施例Ｉ
Ｓｉ粉末（粒径１．１μｍ）、ＴｉＮ粉末（粒径１．５
μｍ）を原料とし、焼結体中のＴｉＮの量が第１表のよ
うになるよう所定の割合に混合、加圧成形の後１４００
℃、７２時間の反応焼結を行なった（昇温速度は１００
℃／Ｈ，Ｎ、−１０％Ａｒ気流中）。得られた焼結体の
特性を第１表に示す。Example I Si powder (particle size 1.1 μm), TiN powder (particle size 1.5
μm) as a raw material, mixed at a predetermined ratio so that the amount of TiN in the sintered body is as shown in Table 1, and after pressure molding, 1400
Reaction sintering was performed at ℃ for 72 hours (heating rate was 100
°C/H, N, -10% Ar flow). Table 1 shows the properties of the obtained sintered body.
第 １ 表
実施例２
Ｓｉ粉末（粒径１゜１μｍ）と各種導電性化合物粉末（
粒径１．５〜３．５μｍ）を用い、焼結体中の導電性化
合物の量が４０ｖｏ１％となるよう所定の割合に混合、
加圧成形の後、実施例１と同一の焼結条件で反応焼結を
行なった。得られた焼結体の特性を第２表に示す。Table 1 Example 2 Si powder (particle size 1° 1 μm) and various conductive compound powders (
(particle size 1.5 to 3.5 μm), mixed at a predetermined ratio so that the amount of conductive compound in the sintered body is 40vol%,
After pressure forming, reaction sintering was performed under the same sintering conditions as in Example 1. The properties of the obtained sintered body are shown in Table 2.
第２表
以上の実施例より導電性化合物を２０〜７０ｖｏ１％添
加することにより良好な導電性を持つ、反応焼結窒化珪
素基複合焼結体が得られることがわかる。From the Examples shown in Table 2 and above, it can be seen that by adding 20 to 70 vol% of a conductive compound, a reaction-sintered silicon nitride-based composite sintered body having good conductivity can be obtained.
本発明によれば、反応焼結窒化珪素に導電性を付与した
窒化珪素基複合焼結体を得ることができる。According to the present invention, it is possible to obtain a silicon nitride-based composite sintered body in which conductivity is imparted to reaction-sintered silicon nitride.
これにより、従来の金属溶湯用るつぼ等の限られた分野
に加え、導電性を利用した極めて広い分野への適用が可
能となる。This makes it possible to apply it not only to limited fields such as conventional crucibles for molten metal, but also to an extremely wide range of fields that utilize conductivity.
すなわちヒーター材料、黒鉛に代替するブラシ材料等の
導電性を持っ耐摩材料、連続気孔を利用した気体反応用
媒体、放電加工を用いる構造部品等広範囲の分野におい
ての使用が可能となる。That is, it can be used in a wide range of fields such as heater materials, conductive and wear-resistant materials such as brush materials replacing graphite, gas reaction media using continuous pores, and structural parts using electrical discharge machining.
Claims (1)
し、１０％を越える気孔を含むことを特徴とする反応焼
結法による窒化珪素基複合焼結体。 ２ 導電性化合物としてIVａ、Ｖａ、VIａ族の窒化物、
酸窒化物のうち１種以上の化合物を用いる特許請求の範
囲第１項記載の窒化珪素基複合焼結体。[Scope of Claims] 1. A silicon nitride-based composite sintered body produced by a reactive sintering method, characterized in that it contains 20 to 70 vol% of a conductive compound, has conductivity, and contains more than 10% of pores. 2 Nitride of group IVa, Va, VIa as a conductive compound,
The silicon nitride-based composite sintered body according to claim 1, which uses one or more compounds among oxynitrides.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-271018 | 1986-11-14 | ||
| JP27101886 | 1986-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63233077A true JPS63233077A (en) | 1988-09-28 |
Family
ID=17494262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62200640A Pending JPS63233077A (en) | 1986-11-14 | 1987-08-11 | Silicon nitride base composite sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63233077A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008247716A (en) * | 2007-03-30 | 2008-10-16 | National Institute Of Advanced Industrial & Technology | Reaction sintering silicon nitride-based sintered body and its producing process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57200265A (en) * | 1981-05-31 | 1982-12-08 | Sumitomo Electric Industries | Silicon nitrogen member and manufacture |
| JPS5841771A (en) * | 1981-08-31 | 1983-03-11 | 住友電気工業株式会社 | Silicon nitride sintered body |
| JPS5860677A (en) * | 1981-09-30 | 1983-04-11 | 日本特殊陶業株式会社 | Manufacture of high tenacity silicon nitride sintered body |
| JPS61207927A (en) * | 1985-03-12 | 1986-09-16 | Fueroo:Kk | Stable measuring method for ultrasonic level instrument |
| JPS6283377A (en) * | 1985-10-04 | 1987-04-16 | 日本特殊陶業株式会社 | Manufacture of composite sintered body |
| JPS63185864A (en) * | 1986-09-05 | 1988-08-01 | 株式会社日立製作所 | Composite ceramics and manufacture |
-
1987
- 1987-08-11 JP JP62200640A patent/JPS63233077A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57200265A (en) * | 1981-05-31 | 1982-12-08 | Sumitomo Electric Industries | Silicon nitrogen member and manufacture |
| JPS5841771A (en) * | 1981-08-31 | 1983-03-11 | 住友電気工業株式会社 | Silicon nitride sintered body |
| JPS5860677A (en) * | 1981-09-30 | 1983-04-11 | 日本特殊陶業株式会社 | Manufacture of high tenacity silicon nitride sintered body |
| JPS61207927A (en) * | 1985-03-12 | 1986-09-16 | Fueroo:Kk | Stable measuring method for ultrasonic level instrument |
| JPS6283377A (en) * | 1985-10-04 | 1987-04-16 | 日本特殊陶業株式会社 | Manufacture of composite sintered body |
| JPS63185864A (en) * | 1986-09-05 | 1988-08-01 | 株式会社日立製作所 | Composite ceramics and manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008247716A (en) * | 2007-03-30 | 2008-10-16 | National Institute Of Advanced Industrial & Technology | Reaction sintering silicon nitride-based sintered body and its producing process |
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