JPS632328A - シリコンのエツチング方法 - Google Patents

シリコンのエツチング方法

Info

Publication number
JPS632328A
JPS632328A JP62093430A JP9343087A JPS632328A JP S632328 A JPS632328 A JP S632328A JP 62093430 A JP62093430 A JP 62093430A JP 9343087 A JP9343087 A JP 9343087A JP S632328 A JPS632328 A JP S632328A
Authority
JP
Japan
Prior art keywords
etching
solution
silicon
pyrocatechol
hydrogen peroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62093430A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0225250B2 (https=
Inventor
ニコラス・ビーチコ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS632328A publication Critical patent/JPS632328A/ja
Publication of JPH0225250B2 publication Critical patent/JPH0225250B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching

Landscapes

  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
JP62093430A 1986-06-18 1987-04-17 シリコンのエツチング方法 Granted JPS632328A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/875,833 US4929301A (en) 1986-06-18 1986-06-18 Anisotropic etching method and etchant
US875833 2001-06-05

Publications (2)

Publication Number Publication Date
JPS632328A true JPS632328A (ja) 1988-01-07
JPH0225250B2 JPH0225250B2 (https=) 1990-06-01

Family

ID=25366439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62093430A Granted JPS632328A (ja) 1986-06-18 1987-04-17 シリコンのエツチング方法

Country Status (3)

Country Link
US (1) US4929301A (https=)
EP (1) EP0249767A3 (https=)
JP (1) JPS632328A (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2909743B2 (ja) * 1989-03-08 1999-06-23 富山日本電気株式会社 銅または銅合金の化学研磨方法
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
US6000411A (en) * 1990-11-05 1999-12-14 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6121217A (en) 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
JP2995667B2 (ja) * 1990-11-27 1999-12-27 東海電化工業株式会社 銅を含む酸性過酸化水素水溶液の安定化法
US5242536A (en) * 1990-12-20 1993-09-07 Lsi Logic Corporation Anisotropic polysilicon etching process
US5753601A (en) * 1991-01-25 1998-05-19 Ashland Inc Organic stripping composition
US5556482A (en) * 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
US7144849B2 (en) * 1993-06-21 2006-12-05 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
DE69636618T2 (de) * 1995-07-27 2007-08-30 Mitsubishi Chemical Corp. Verfahren zur behandlung einer substratoberfläche und behandlungsmittel hierfür
US6393685B1 (en) 1997-06-10 2002-05-28 The Regents Of The University Of California Microjoinery methods and devices
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3160539A (en) * 1958-09-08 1964-12-08 Trw Semiconductors Inc Surface treatment of silicon
US3457107A (en) * 1965-07-20 1969-07-22 Diversey Corp Method and composition for chemically polishing metals
US3650957A (en) * 1970-07-24 1972-03-21 Shipley Co Etchant for cupreous metals
US3873203A (en) * 1973-03-19 1975-03-25 Motorola Inc Durable high resolution silicon template
GB1588669A (en) * 1978-05-30 1981-04-29 Standard Telephones Cables Ltd Silicon transducer
DE2922416A1 (de) * 1979-06-01 1980-12-11 Ibm Deutschland Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
EP0249767A3 (en) 1988-06-29
JPH0225250B2 (https=) 1990-06-01
EP0249767A2 (en) 1987-12-23
US4929301A (en) 1990-05-29

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