JPS6322633B2 - - Google Patents
Info
- Publication number
- JPS6322633B2 JPS6322633B2 JP56152181A JP15218181A JPS6322633B2 JP S6322633 B2 JPS6322633 B2 JP S6322633B2 JP 56152181 A JP56152181 A JP 56152181A JP 15218181 A JP15218181 A JP 15218181A JP S6322633 B2 JPS6322633 B2 JP S6322633B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- conductive film
- solar cell
- electrode
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- -1 AL 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56152181A JPS5854678A (ja) | 1981-09-28 | 1981-09-28 | 太陽電池素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56152181A JPS5854678A (ja) | 1981-09-28 | 1981-09-28 | 太陽電池素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5854678A JPS5854678A (ja) | 1983-03-31 |
| JPS6322633B2 true JPS6322633B2 (ru) | 1988-05-12 |
Family
ID=15534817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56152181A Granted JPS5854678A (ja) | 1981-09-28 | 1981-09-28 | 太陽電池素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5854678A (ru) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3328869A1 (de) * | 1983-08-10 | 1985-02-28 | Nukem Gmbh, 6450 Hanau | Photovoltaische zelle und verfahren zum herstellen dieser |
| US4586988A (en) * | 1983-08-19 | 1986-05-06 | Energy Conversion Devices, Inc. | Method of forming an electrically conductive member |
| JP2710318B2 (ja) * | 1987-11-26 | 1998-02-10 | 株式会社デンソー | 半透光性太陽電池 |
| WO2012105155A1 (ja) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5568681A (en) * | 1978-11-17 | 1980-05-23 | Yoshihiro Hamakawa | Amorphous silicon solar battery and fabricating the same |
-
1981
- 1981-09-28 JP JP56152181A patent/JPS5854678A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5568681A (en) * | 1978-11-17 | 1980-05-23 | Yoshihiro Hamakawa | Amorphous silicon solar battery and fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5854678A (ja) | 1983-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4287473B2 (ja) | 太陽電池素子の製造方法 | |
| JP3469729B2 (ja) | 太陽電池素子 | |
| JPS6231835B2 (ru) | ||
| JP2010045368A (ja) | 色調整を有する太陽電池及びその製造方法 | |
| TWI459572B (zh) | Light power device and its manufacturing method | |
| JP2641800B2 (ja) | 太陽電池及びその製造方法 | |
| JPS6322633B2 (ru) | ||
| JP2011243806A (ja) | 太陽電池 | |
| WO2010150358A1 (ja) | 光起電力装置およびその製造方法 | |
| JPH0945946A (ja) | 太陽電池及びその製造方法 | |
| JPH0583199B2 (ru) | ||
| JP2005353836A (ja) | 太陽電池素子及びこれを用いた太陽電池モジュール | |
| JP5501549B2 (ja) | 光電変換素子、およびそれから構成される光電変換モジュール | |
| JPH0125234B2 (ru) | ||
| JPS5943101B2 (ja) | 非晶質半導体太陽電池 | |
| JPS612372A (ja) | 光起電力装置 | |
| JPS5818972A (ja) | 光電変換装置 | |
| JPS6321880A (ja) | 光起電力装置 | |
| JP3253449B2 (ja) | 光起電力装置の製造方法 | |
| JP2648698B2 (ja) | 耐熱型太陽電池 | |
| JP6113196B2 (ja) | 太陽電池セルおよびその製造方法 | |
| JPH06283738A (ja) | 光起電力装置 | |
| JPH04320380A (ja) | 太陽電池の製造方法 | |
| JP2869178B2 (ja) | 光起電力装置 | |
| JPS6248912B2 (ru) |