JPS63219148A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63219148A JPS63219148A JP5254787A JP5254787A JPS63219148A JP S63219148 A JPS63219148 A JP S63219148A JP 5254787 A JP5254787 A JP 5254787A JP 5254787 A JP5254787 A JP 5254787A JP S63219148 A JPS63219148 A JP S63219148A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- semiconductor element
- semiconductor device
- resistance layer
- static electricity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 230000005611 electricity Effects 0.000 abstract description 8
- 230000003068 static effect Effects 0.000 abstract description 8
- 239000000919 ceramic Substances 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 4
- 230000001066 destructive effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体素子を封止した外囲部より突き出たリ
ードを備えた半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device having leads protruding from an envelope in which a semiconductor element is sealed.
従来の技術
従来の半導体装置の例として第２図に示したデュアルイ
ンラインパッケージ（以後ＤＩＰと記す。）の正面図を
参照して説明する。2. Description of the Related Art An example of a conventional semiconductor device will be described with reference to a front view of a dual in-line package (hereinafter referred to as DIP) shown in FIG.
従来のＤＩＰは、セラミックや樹脂等で半導体素子を封
止した外囲部１より金属でできたり一部２が突き出てお
り、同リード２が下方に折り曲げられた構造をしている
。A conventional DIP has a structure in which a part 2 made of metal protrudes from an outer envelope 1 in which a semiconductor element is sealed with ceramic, resin, etc., and the leads 2 are bent downward.
発明が解決しようとする問題点
従来のリード構造では金属部でできたリードが電気的に
露出した構造であるため、半導体装置を取り扱う人が、
リードに接触することにより人体に帯電していた静電気
がリードを介して外囲部の内部に封止された半導体素子
に印加され、半導体素子の性能の劣化や破壊故障が生じ
る問題があった。Problems to be Solved by the Invention In the conventional lead structure, the leads made of metal parts are electrically exposed.
There is a problem in that static electricity that has been charged on the human body due to contact with the lead is applied to the semiconductor element sealed inside the outer enclosure through the lead, resulting in deterioration of the performance of the semiconductor element or destructive failure.
本発明は上記の問題点を解消するもので人体などによる
外部からの静電気がリードを介して半導体素子に印加さ
れにくい半導体装置を提供しようとするものである。The present invention solves the above problems and provides a semiconductor device in which static electricity from the outside, such as from a human body, is less likely to be applied to a semiconductor element via a lead.
問題点を解決するための手段
本発明の半導体装置は、半導体素子を封止した外囲部よ
り突き出たリードの片面の全域もしくは片面の一部に開
口を設けて高抵抗体層が被覆された構造のものである。Means for Solving the Problems In the semiconductor device of the present invention, a lead protruding from an envelope in which a semiconductor element is sealed is provided with an opening over the entire area or a part of one side of the lead, and is covered with a high-resistance layer. It is of structure.
作用
本発明の構造によれば、人体が接触しやすいす−ドの片
面が高抵抗体層により被覆されているため人体がリード
の金属部に接触しに（くなり、人体に帯電していた静電
気がリードを通して半導体素子に印加されるのを防止す
ることができる。According to the structure of the present invention, one side of the lead that is easily touched by the human body is coated with a high-resistance layer, which prevents the human body from coming into contact with the metal part of the lead, which prevents the human body from becoming electrically charged. It is possible to prevent static electricity from being applied to the semiconductor element through the leads.
実施例
本発明の半導体装置の実施例を第１図に示したＤＩＰの
正面図を参照して説明する。Embodiment An embodiment of the semiconductor device of the present invention will be described with reference to the front view of the DIP shown in FIG.
本発明のＤＩＰは半導体素子を樹脂もしくはセラミック
で封止した外囲部１より折り曲げて突き出たり一部２の
外囲部に対して外側面が有機絶縁膜もしくは金属酸化膜
等の高抵抗体層３により被覆された構造のものである。The DIP of the present invention is made by bending and protruding from an outer envelope 1 in which a semiconductor element is sealed with resin or ceramic. It has a structure coated with No. 3.
この構造によりリード金属部に直接人体が接触しにくく
なり、人体から放電される静電気による半導体装置の性
能劣化や破壊故障を防止させることができる。なお、半
導体装置の電気特性を自動検査装置などを用いて調べる
ため、もしくはプリント基板にはんだ付けするために高
抵抗体層３て被覆されたリードの片面の一部にリード２
の金属部が露出した開口４を設けた構造にしてもよい。This structure makes it difficult for the human body to come into direct contact with the lead metal portion, and can prevent performance deterioration and destructive failure of the semiconductor device due to static electricity discharged from the human body. In addition, in order to examine the electrical characteristics of a semiconductor device using an automatic testing device or the like, or to solder it to a printed circuit board, a lead 2 is attached to a part of one side of the lead coated with a high-resistance layer 3.
It is also possible to have a structure in which an opening 4 is provided in which the metal part is exposed.
なお、高抵抗体層３を、ＤＩＰの場合人が接触しやすい
外囲部に対して外側のリード表面のみに被覆すればよい
し、また、第２図に示したようなり一部２が外囲部１よ
り平行に突き出たフラット形パッケージの場合は、少し
でも人が接触しやすいリードの上面に高抵抗体層３を被
覆すればよい。このように、本発明は外囲部より突き出
たリードを有するあるゆる、半導体装置に適用すること
が可能である。したがってパッケージの形状、材質、リ
ードビン数等はまったく限定されるものではない。In addition, in the case of DIP, it is sufficient to coat the high-resistance layer 3 only on the outer lead surface of the outer enclosure that is easily touched by people, and also, as shown in FIG. In the case of a flat package that protrudes parallel to the enclosure 1, the high resistance layer 3 may be coated on the upper surface of the lead that is easily touched by a person. In this manner, the present invention can be applied to any semiconductor device having leads protruding from the outer enclosure. Therefore, the shape, material, number of lead bins, etc. of the package are not limited at all.
発明の効果
本発明の半導体装置によれば、リードの人体が接触しや
すい面が高抵抗体層により被覆されているので取り扱い
中に人体に帯電していた静電気がリードを通して半導体
素子に印加されることがなく、半導体素子を静電破壊か
ら保護することができる。Effects of the Invention According to the semiconductor device of the present invention, the surface of the lead that is easily touched by the human body is covered with a high-resistance layer, so that static electricity that is charged on the human body during handling is applied to the semiconductor element through the lead. Therefore, the semiconductor element can be protected from electrostatic damage.
第１図は本発明の半導体装置の実施例を示すＤＩＰの正
面図、第２図は本発明の他の実施例を示すフラット形パ
ッケージの正面図、第３図は従来のＤＴＰを示す正面図
である。
１・・・・・・外囲部、２・・・・・・リード、３・・
・・・・高抵抗体層、４・・・・・・開口。
代理人の氏名 弁理士 中尾敏男 ほか１名７−−−タ
ト 匣 部
？−−− ワード
第２図FIG. 1 is a front view of a DIP showing an embodiment of the semiconductor device of the present invention, FIG. 2 is a front view of a flat package showing another embodiment of the invention, and FIG. 3 is a front view of a conventional DTP. It is. 1...Outer area, 2...Lead, 3...
...High resistance layer, 4...Opening. Name of agent: Patent attorney Toshio Nakao and one other person 7---Tato Habe? --- Word Figure 2
Claims (1)
ドの片面の全域もしくは片面の一部に開口を設けて高抵
抗体層が被覆されていることを特徴とする半導体装置。1. A semiconductor device characterized in that a lead protruding outward from an envelope in which a semiconductor element is sealed is provided with an opening over the entire area or a part of one side of the lead and is covered with a high-resistance layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5254787A JPS63219148A (en) | 1987-03-06 | 1987-03-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5254787A JPS63219148A (en) | 1987-03-06 | 1987-03-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63219148A true JPS63219148A (en) | 1988-09-12 |
Family
ID=12917822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5254787A Pending JPS63219148A (en) | 1987-03-06 | 1987-03-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63219148A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0563135A (en) * | 1991-08-29 | 1993-03-12 | Kawasaki Steel Corp | Lead frame with protective element |
-
1987
- 1987-03-06 JP JP5254787A patent/JPS63219148A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0563135A (en) * | 1991-08-29 | 1993-03-12 | Kawasaki Steel Corp | Lead frame with protective element |
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