JPS63217658A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS63217658A JPS63217658A JP62052316A JP5231687A JPS63217658A JP S63217658 A JPS63217658 A JP S63217658A JP 62052316 A JP62052316 A JP 62052316A JP 5231687 A JP5231687 A JP 5231687A JP S63217658 A JPS63217658 A JP S63217658A
- Authority
- JP
- Japan
- Prior art keywords
- type
- photodiode
- layer
- integrated circuit
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 230000003287 optical effect Effects 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002411 adverse Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 1
- 230000003321 amplification Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＰＩＮ型ホトダイオード（以下ホトダイオード
と称す）と集積回路をひとつの半導体基板上に集積させ
た光半導体集積回路装置に関し、特にリモートコントロ
ールの受光部に用いる光半導体集積回路装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an optical semiconductor integrated circuit device in which a PIN type photodiode (hereinafter referred to as a photodiode) and an integrated circuit are integrated on one semiconductor substrate, and particularly relates to an optical semiconductor integrated circuit device in which a PIN type photodiode (hereinafter referred to as a photodiode) and an integrated circuit are integrated on a single semiconductor substrate. The present invention relates to an optical semiconductor integrated circuit device used in a light receiving section.
従来、リモートコントロールの受光部は、ホトダイオー
ドとホトダイオードによって受光され電流に変換された
信号を増幅する集積回路装置による混成集積回路で構成
されていた。なぜなら、ホトダイオードはＮ型の高比抵
抗でかつ厚いエピタキシャル層または半導体基板にＰ型
不純物を拡散し、これに反し集積回路はＰ型半導体基板
にＮ型エピタキシャル層を形成し、次にＰ型あるいはＮ
型不純物を拡散している。すなわち、使用する基板が全
く異なるからである。Conventionally, a light receiving section of a remote control has been configured with a hybrid integrated circuit including a photodiode and an integrated circuit device that amplifies a signal received by the photodiode and converted into an electric current. This is because photodiodes diffuse P-type impurities into an N-type high resistivity and thick epitaxial layer or semiconductor substrate, whereas integrated circuits form an N-type epitaxial layer on a P-type semiconductor substrate and then diffuse P-type or N
Diffusion of type impurities. That is, the substrates used are completely different.
上述のように、従来のリモートコントロール受光部は混
成集積回路で構成されている為、ホトダイオードと項中
部を含む集積回路との配線距離が長くなり、電磁波の影
響を受は易く雑音成分のもととなり、誤動作の原因にな
っている。また、入射する光が信号光だけでなく、室内
灯、日光なども入射する為Ｓ／Ｎ比を恣＜シており、電
磁波の影響を助長している。上記の様な電磁的な雑音成
分をとυ込むのを防ぐ為、ホトダイオードと増巾部を含
む集積回路までの配線を短かくしたり、ホトダイオード
の受光面のみを露出させてリモートコントロール受光部
全体を電磁シールドしなければならないといった問題点
があり、小型、安価の市場要求に答えられないといった
短所がある。As mentioned above, the conventional remote control light receiving section is composed of a hybrid integrated circuit, so the wiring distance between the photodiode and the integrated circuit including the midsection is long, and it is easily affected by electromagnetic waves and is a source of noise components. This causes malfunction. Furthermore, since the incident light is not only signal light but also indoor lights, sunlight, etc., the S/N ratio is arbitrary and the influence of electromagnetic waves is amplified. In order to prevent the introduction of electromagnetic noise components such as those mentioned above, the wiring to the integrated circuit including the photodiode and amplification section is shortened, and only the light receiving surface of the photodiode is exposed to prevent the entire remote control light receiving section from being introduced. There are problems such as the need for electromagnetic shielding, and disadvantages such as the inability to meet market demands for smaller size and lower cost.
本発明の構造は、Ｎ型高比抵抗基板とＰ型埋込層とＮ型
低比抵抗エビタ千シアル層を有している。The structure of the present invention includes an N-type high resistivity substrate, a P-type buried layer, and an N-type low resistivity Evitar layer.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一笑翔例の縦断面図である。FIG. 1 is a longitudinal sectional view of one embodiment of the present invention.
高比抵抗のＮ型基板５のホトダイオードの領域以外の領
域にＰ型埋込層７を拡散し、次に低比抵抗のＮ型エピタ
キシャル層２ｔ−成長し、Ｐ型絶縁層３を拡散して、ホ
トダイオードと集積回路部を絶縁す込とともに、集積回
路領域の必要な個所を絶縁分離する。その後ホトダイオ
ードのＰ型アノード層１及び集積回路部にＰ型ベース層
１′を拡散し、さらにＰ型ベース層１′にＮ型エミ、り
層４を拡散する、この時ホトダイオードのカソード６を
同時に拡散しておく。こうすることによＪＮ型基板にホ
トダイオードを形成するとともに集積回路が形成された
ことになる。ここでＮ型エピタキシャル層２は集積回路
が高速動作に有利な嵌に薄い低比抵抗層とする、これは
、ホトダイオードの空乏層の基板方向の広がり巾を広く
し、高感度を得る為でもある。A P-type buried layer 7 is diffused in a region other than the photodiode region of a high resistivity N-type substrate 5, and then a low resistivity N-type epitaxial layer 2t is grown, and a P-type insulating layer 3 is diffused. In addition to insulating the photodiode and the integrated circuit section, necessary parts of the integrated circuit area are also insulated and separated. After that, a P-type base layer 1' is diffused into the P-type anode layer 1 and the integrated circuit part of the photodiode, and an N-type emitter layer 4 is further diffused into the P-type base layer 1'.At this time, the cathode 6 of the photodiode is simultaneously diffused. Spread it out. By doing this, a photodiode was formed on the JN type substrate, and an integrated circuit was also formed. Here, the N-type epitaxial layer 2 is a thin, low-resistivity layer that is advantageous for high-speed operation of the integrated circuit.This is also to widen the width of the depletion layer of the photodiode in the substrate direction and obtain high sensitivity. .
〔実施例２〕
第２図は本発明の実施例２の秩断面である。高比抵抗の
Ｎ型半導体基板１５にＰ型埋込層１７を形成したのち比
較的比抵抗の高いＮ型エピタキシャル層２０を成長しＰ
型アノード層１１とＰ型ゲート層２１ｔ−形成し、Ｎ型
ンースＮ１８、Ｎ型ドレイン層１９を拡散しｎチャンネ
ルジャンクションＦＥＴを作り込んだものである。Ｎ型
エピタキシャル＃２０の比捻抗を低くする必要がないの
でホトダイオードの空乏層の巾がより広くなるので高感
度が得られ、また、ジャンクシｖｓ ｙ Ｆ Ｅ Ｔは
、出力インピーダンスの高いホトダイオードの出力を受
けるのに適している。[Example 2] FIG. 2 is a cross section of Example 2 of the present invention. After forming a P-type buried layer 17 on an N-type semiconductor substrate 15 with a high resistivity, an N-type epitaxial layer 20 with a relatively high resistivity is grown.
A type anode layer 11 and a P type gate layer 21t are formed, and an N type source N18 and an N type drain layer 19 are diffused to form an n channel junction FET. Since there is no need to lower the specific torsion of N-type epitaxial #20, the width of the depletion layer of the photodiode becomes wider, resulting in higher sensitivity. suitable for receiving.
以上説明したように、本発明はホトダイオードと増巾回
路をひとつの半導体基板く形成しモノリシ、りＩＣ化し
ているので、電磁波による悪影響が無視出来る位小さく
なるので！磁シールドを必要としないという効果がある
。As explained above, in the present invention, the photodiode and the amplification circuit are formed on one semiconductor substrate and are made into a monolithic or IC, so the adverse effects of electromagnetic waves are minimized to the point where they can be ignored! This has the effect of not requiring a magnetic shield.
第１図は本発明の実施例１の縦断面図、第２図は実施例
２の縦断面図である。
１・・・・・・Ｐ型アノード層、２・・・・・・Ｎ型エ
ピタキシャル層、３・・・・・・Ｐ型絶縁層、４・・・
・・・Ｎ型エミツタ層、５・・・・・・Ｎ型基板、６・
・・・・・カソード層、７・・・・・・Ｐ型埋込層、１
８・・・・・・Ｎ型ソース層、１９−・・・・・Ｎ型ド
レイン層、２０・・・・・・Ｎ型エピタキシャル膚、２
１・・・・・・Ｐ型ゲート層。FIG. 1 is a vertical cross-sectional view of a first embodiment of the present invention, and FIG. 2 is a vertical cross-sectional view of a second embodiment. 1... P-type anode layer, 2... N-type epitaxial layer, 3... P-type insulating layer, 4...
...N-type emitter layer, 5...N-type substrate, 6.
... Cathode layer, 7 ... P-type buried layer, 1
8... N-type source layer, 19-... N-type drain layer, 20... N-type epitaxial layer, 2
1...P-type gate layer.
Claims (1)
た後、Ｎ型低抵抗層をエピタキシャル成長し、前記Ｐ型
領域部に集積回路を形成し、他の領域にＰＩＮ型ホトダ
イオード形成したことを特徴とする光半導体装置。After forming a P-type region on a part of the surface of the N-type high-resistivity semiconductor substrate, an N-type low-resistance layer was epitaxially grown, an integrated circuit was formed in the P-type region, and a PIN-type photodiode was formed in other regions. An optical semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62052316A JPS63217658A (en) | 1987-03-06 | 1987-03-06 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62052316A JPS63217658A (en) | 1987-03-06 | 1987-03-06 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63217658A true JPS63217658A (en) | 1988-09-09 |
Family
ID=12911377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62052316A Pending JPS63217658A (en) | 1987-03-06 | 1987-03-06 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63217658A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03111997A (en) * | 1989-09-26 | 1991-05-13 | Matsushita Electric Works Ltd | Photoelectric smoke sensor |
| JPH09162378A (en) * | 1995-12-13 | 1997-06-20 | Nec Corp | Optical semiconductor device |
| US6208447B1 (en) | 1997-02-25 | 2001-03-27 | Matsushita Electric Industrial Co., Ltd. | Optical receiver |
-
1987
- 1987-03-06 JP JP62052316A patent/JPS63217658A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03111997A (en) * | 1989-09-26 | 1991-05-13 | Matsushita Electric Works Ltd | Photoelectric smoke sensor |
| JPH09162378A (en) * | 1995-12-13 | 1997-06-20 | Nec Corp | Optical semiconductor device |
| US6208447B1 (en) | 1997-02-25 | 2001-03-27 | Matsushita Electric Industrial Co., Ltd. | Optical receiver |
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