JPS63217546A - Production of optical disk - Google Patents
Production of optical diskInfo
- Publication number
- JPS63217546A JPS63217546A JP5070287A JP5070287A JPS63217546A JP S63217546 A JPS63217546 A JP S63217546A JP 5070287 A JP5070287 A JP 5070287A JP 5070287 A JP5070287 A JP 5070287A JP S63217546 A JPS63217546 A JP S63217546A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transparent substrate
- layer
- sputter etching
- optical disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000992 sputter etching Methods 0.000 claims abstract description 11
- 239000011261 inert gas Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 35
- 239000011241 protective layer Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000004299 exfoliation Methods 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 230000015654 memory Effects 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910017061 Fe Co Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- FOPBMNGISYSNED-UHFFFAOYSA-N [Fe].[Co].[Tb] Chemical compound [Fe].[Co].[Tb] FOPBMNGISYSNED-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
光ディスクを構成する下地層の1明基板への密着性を向
上し、剥離やクラッタなどの不良を無くする方法として
、透明基板に不活性ガスによるスパッタエツチング処理
を行った後、下地層、記録層および保護層と層形成して
光ディスクを形成する方法。[Detailed Description of the Invention] [Summary] As a method for improving the adhesion of an underlayer constituting an optical disk to a transparent substrate and eliminating defects such as peeling and clutter, a sputter etching treatment using an inert gas is applied to a transparent substrate. After that, a base layer, a recording layer, and a protective layer are formed to form an optical disc.
本発明は密着性を向上した光ディスクの製造方法に関す
る。The present invention relates to a method of manufacturing an optical disc with improved adhesion.
る。Ru.
光ディスクはレーザ光を用いて高密度の情報記録を行う
メモリであり、記録容量が大きく、非接触で記録と再生
を行うことができ、また塵埃の影響を受けないなど優れ
た特徴を備えている。Optical disks are memories that use laser light to record high-density information, and have excellent features such as large storage capacity, non-contact recording and playback, and being unaffected by dust. .
ここで、光ディスクには記録媒体として低融点金属を用
い、情報の記録を穴(ピット)の有無で行う追記形メモ
リ (Write−once Memory)があり、
また、この外に結晶−結晶間あるいは結晶−非晶質(ア
モルファス)間の相変化を生ずる際の反射率の差を利用
したり、記録層をフェリ磁性体で形成し、バイアス磁界
を印加しである状態でレーザ光の照射を行い、照射位置
の温度上昇により保磁力が低下して磁化反転するのを利
用して情報を記録し、カー効果を用いて再生を行う書き
換え可能なメモリ (Brasable Memory
)もある。Here, optical disks include write-once memories that use low-melting point metals as recording media and record information with or without holes (pits).
In addition to this, it is also possible to utilize the difference in reflectance when a phase change occurs between crystals and crystals or between crystals and amorphous, or to form the recording layer from a ferrimagnetic material and apply a bias magnetic field. A rewritable memory (brasable memory) that records information by irradiating it with a laser beam and reversing magnetization as the coercive force decreases as the temperature rises at the irradiation position, and reproduces it using the Kerr effect. Memory
) is also available.
このように光ディスクには色々のタイプが存在するが、
この構成はポリメチルメタクリレート(略称PMMA)
やポリカーボネート(略称PC)のような透明樹脂を型
成形して案内’18(プリグループ)のついた透明基板
を形成するか、或いはディスク状のガラス板の上にホト
ポリマを塗布し、これに写真蝕刻技術(ホトリソグラフ
ィ)を用いて同心円状あるいは渦巻き状の案内溝を形成
した透明基板1を作り、この上に第2図に示すように下
地層2.記録層3.保護層4と順次に層形成して作られ
ている。In this way, there are various types of optical discs, but
This composition is polymethyl methacrylate (abbreviated as PMMA)
A transparent substrate with a guide '18 (pre-group) is formed by molding a transparent resin such as polycarbonate (abbreviated as PC), or a photopolymer is coated on a disk-shaped glass plate and a photograph is printed on this. Using etching technology (photolithography), a transparent substrate 1 with concentric or spiral guide grooves formed thereon is made, and a base layer 2. Recording layer 3. It is made by sequentially forming the protective layer 4.
ここで、下地層2は透明基板lを通っての湿気の侵入や
樹脂に含有する不純物やモノマによる記録層3の汚染を
防ぐためのものであり、また保護層4は上方からの湿気
の侵入や大気に接する場合に起こる記録層3の酸化を防
ぐために設けられている。Here, the base layer 2 is for preventing moisture from entering through the transparent substrate l and from contaminating the recording layer 3 by impurities and monomers contained in the resin, and the protective layer 4 is for preventing moisture from entering from above. The recording layer 3 is provided to prevent oxidation of the recording layer 3 which occurs when the recording layer 3 comes into contact with air or the atmosphere.
ここで、下地層2.記録層3.保護層4は殆どの場合無
機物から形成されており、これらの各層は合成樹脂から
なる案内溝上に形成されているため、長期に互って使用
する場合に膨張係数の差により剥離やクラックなどの障
害が発生し易い。Here, base layer 2. Recording layer 3. The protective layer 4 is made of inorganic material in most cases, and each of these layers is formed on a guide groove made of synthetic resin, so if they are used together for a long time, they may cause peeling or cracking due to the difference in expansion coefficient. Failures are likely to occur.
光ディスクの透明基板lはインジェクシヨン・モールド
法で形成したPMMAやPCのような合成樹脂よりなる
か、或いはホトポリマを塗布した後にホトエツチングし
、案内溝を設けたガラス基板からなっているが、案内溝
のパターン精度が優れ、また欠陥の少ないことから後者
の基板が多く使用されている。The transparent substrate l of the optical disk is made of synthetic resin such as PMMA or PC formed by injection molding, or it is made of a glass substrate coated with photopolymer and then photo-etched to provide guide grooves. The latter type of substrate is often used because of its superior pattern accuracy and fewer defects.
ここで、ガラス基板とホトポリマ層との接着はシランカ
ップリング剤などを用いて行われていることから接着性
は良く、この間で剥離の起こることは少ない。Here, since the glass substrate and the photopolymer layer are bonded together using a silane coupling agent or the like, the adhesion is good and peeling is unlikely to occur between them.
一方、下地層2.記録層3および保護層4の形成は高周
波スパッタ法や電子ビーム蒸着法などを用いて連続して
行われているが、これらの無機層と透明基板1とは膨張
係数が大きく異なるために、7JJ Xiやクランクが
発生し易い。On the other hand, base layer 2. The recording layer 3 and the protective layer 4 are formed continuously using a high frequency sputtering method, an electron beam evaporation method, etc., but since these inorganic layers and the transparent substrate 1 have significantly different expansion coefficients, 7JJ Xi and cranks are likely to occur.
すなわち、下地層2や保護層4の形成材料としては二酸
化硅素(Sinり 、硫化亜鉛(ZnS) 、窒化なる
が、追記形の光ディスクの場合にはテルル(Te)単体
や砒素・テルル・ゲルマニウム(As TeGe) 、
砒素・テルル・セレン(As Te Se)などの非晶
質混合物が使用されている。In other words, the materials for forming the underlayer 2 and the protective layer 4 include silicon dioxide (Sin), zinc sulfide (ZnS), and nitride, but in the case of write-once optical discs, tellurium (Te) alone and arsenic/tellurium/germanium ( AsTeGe),
Amorphous mixtures such as arsenic, tellurium, and selenium (AsTeSe) are used.
また書き換え可能な光ディスクの記録層として相変化を
用いるものについてはインジウム・アンチモン(In
Sb)やインジウム・セレン(In Se)のような金
属が、また磁化反転を用いるものについてはテルビウム
・鉄・コバルト(Tb Fe Co)、ガドリニウム・
コバルト(Gd Co)などの希土類−遷移金属からな
る非晶質合金が用いられている。In addition, for those that use phase change as the recording layer of rewritable optical discs, indium antimony (In
Metals such as Sb) and indium selenium (InSe), and those that use magnetization reversal such as terbium iron cobalt (Tb Fe Co) and gadolinium
Amorphous alloys made of rare earth-transition metals such as cobalt (Gd Co) are used.
このように下地層2.記録層3.保護層4を形成する材
料はそれぞれ異なるもの−1これらの層は1100n〜
200nmの薄膜で形成されているため相互の密着性は
よ(、一方、透明基板は樹脂成形体或いは樹脂被覆体か
らなるために温度サイクルを繰り返し行ったり、高温多
湿の環境に長時間置かれた場合に剥離やクラッタなどの
現象が透明基板1と下地層2の界面で起こり易い。In this way, the base layer 2. Recording layer 3. The materials forming the protective layer 4 are different.-1 These layers are 1100n~
Since the transparent substrate is made of a 200 nm thin film, it has good adhesion to each other (on the other hand, since the transparent substrate is made of a resin molded body or resin coating, it cannot be subjected to repeated temperature cycles or left in a high temperature and humid environment for a long time. In this case, phenomena such as peeling and clutter are likely to occur at the interface between the transparent substrate 1 and the underlying layer 2.
従来、これに対する対策はとられていないが信頼性確保
のために接着性を向上する必要がある。Conventionally, no measures have been taken to address this problem, but it is necessary to improve adhesiveness to ensure reliability.
以上記したように光ディスクは透明基板と下地層との間
で剥離やクラックが発生し易く、この接着性をどのよう
にして向上するかが課題である。As described above, optical discs are prone to peeling and cracking between the transparent substrate and the underlying layer, and the problem is how to improve this adhesiveness.
C問題点を解決するための手段〕 上記の問題はディスク状の透明基板上に下地層。Measures to solve problem C] The above problem involves a base layer on a disk-shaped transparent substrate.
記録層、保護層と層形成してなる光ディスクにおいて、
透明基板に不活性ガスによるスパッタエツチング処理を
行った後、前記下地層の形成を行う光ディスクの製造方
法により解決することができる。In an optical disc formed by forming a recording layer and a protective layer,
This problem can be solved by an optical disc manufacturing method in which the underlayer is formed after performing sputter etching treatment using an inert gas on the transparent substrate.
〔作用〕
有機層の上に無機層を形成する場合に密着力を向上する
化学的を方法としては先に記したようにシランカップリ
ング剤を用いる方法があるが、物理的な方法としてプラ
ズマ処理が知られている。[Function] When forming an inorganic layer on an organic layer, a chemical method for improving adhesion is the use of a silane coupling agent as described above, but a physical method is plasma treatment. It has been known.
この方法は真空蒸着法などによる膜形成に先立ぢ、減圧
した不活性ガス雰囲気中で高周波放電させてプラズマを
作り、このガスのイオンと電子を基板に衝突させて表面
を活性化させた後、大気中に曝すことにより水酸基(O
11基)やカルボニル基(CO基)などの極性基を導入
したり、酸素(0りや窒素(N2)雰囲気中で放電させ
てプラズマを作り、グラスチック基板に直接に極性基を
導入するなどの方法がとられている。In this method, prior to film formation by vacuum evaporation, etc., plasma is generated by high-frequency discharge in a reduced pressure inert gas atmosphere, and the ions and electrons of this gas are made to collide with the substrate to activate the surface. , hydroxyl groups (O
11 groups) or carbonyl groups (CO groups), or generate plasma by discharging in an oxygen (or nitrogen) atmosphere and directly introducing polar groups into the glass substrate. A method is being taken.
このように極性基を導入した状態で膜形成を行うと無機
材料や金属などと配位結合を作ることにより密着力を向
上することができるのである。When a film is formed with polar groups introduced in this way, it is possible to improve adhesion by forming coordination bonds with inorganic materials, metals, etc.
然し、この方法はプラスチック基板上に膜形成する物質
が酸化物や窒化物である賜金には極性基が存在しても効
果がなく、そのためこの方法は光ディスクに対しては効
果がない。However, this method is not effective when the film formed on the plastic substrate is an oxide or nitride, even if polar groups are present, and therefore this method is not effective for optical discs.
そこで、本発明は不活性ガス雰囲気でスパッタエツチン
グを行った後に膜形成を行うことにより接着性を向上す
るものである。Therefore, the present invention improves adhesion by forming a film after sputter etching in an inert gas atmosphere.
この場合はエツチングにより透明基板の表面が荒れるだ
けでなく吸着水、吸着ガスや油脂分などの除去が行われ
る。In this case, etching not only roughens the surface of the transparent substrate, but also removes adsorbed water, adsorbed gas, oil and fat, and the like.
なお、X線光電子分光法(Electron 5cop
y forChemical Analysis略称E
SCA)による観察によると基板表面の極性基の数は減
少しており、また多少炭化が進行している。In addition, X-ray photoelectron spectroscopy (Electron 5cop
y for Chemical Analysis Abbreviation E
According to observation by SCA), the number of polar groups on the substrate surface has decreased, and carbonization has progressed to some extent.
本発明はこのようなスパッタエツチング処理を行った後
、従来の膜形成を行うことにより接着性が向上するもの
である。The present invention improves adhesion by performing conventional film formation after such sputter etching treatment.
実施例1 (ホトポリマ被覆基板を使用した場合)直径
130 mmのディスク状ガラス基板の上にホトポリマ
をスピンコードし、これを選択露光した後に現像して同
心円状の案内溝を設けた透明基板1を、第1図に示すス
パッタ装置の回転電極部5に設置した。Example 1 (When using a photopolymer-coated substrate) A photopolymer was spin-coded onto a disk-shaped glass substrate with a diameter of 130 mm, which was selectively exposed and developed to form a transparent substrate 1 with concentric guide grooves. , was installed in the rotating electrode section 5 of the sputtering apparatus shown in FIG.
次に、下地層2を形成するSi0gターゲット6と光磁
気記録媒体を形成するTb Fe Coターゲット7を
固定電極8の上に設置した。Next, a Si0g target 6 forming the underlayer 2 and a Tb Fe Co target 7 forming the magneto-optical recording medium were placed on the fixed electrode 8.
まず、回転電極5を回転させながら排気して真空度を5
Xl0−’Paにした後、Arガスを導入して真空度
を0.2〜IPaとした状態でバイアス電源9を切り換
えて透明基板1を低電位(約−400V ”)とした状
態でスライドシャッタ10との間で13.5MHzの高
周波電界を印加してプラズマを発生させ、電力を0.4
KWに設定して10分間に亙ってスパッタエツチング
を行った。First, the rotary electrode 5 is rotated and evacuated to bring the degree of vacuum to 5.
After adjusting the voltage to Plasma is generated by applying a 13.5 MHz high frequency electric field between the
Sputter etching was performed for 10 minutes at KW.
次に、真空度を5 Xl0−5Paにした後、スライド
シャッタ10を開き、Arを導入して真空度を0.2〜
0.5 Paにした状態で回転シャフタ11を開き、バ
イアス電源9を切り換えて固定電極を低電位とし、5i
J4ターゲツト6と透明基板1との間に高周波電界を印
加してSiO□ターゲット6をスパッタして透明基板工
の上に1100n成膜したのち、回転シャ7り11を開
いてTb Pa Coターゲット7をスパッタして11
00n成膜し、次に回転シャッタ11を開いてSing
を1100nの厚さに成膜することによって第2図に示
す構成の光磁気ディスクを形成した。Next, after setting the degree of vacuum to 5 Xl0-5Pa, open the slide shutter 10 and introduce Ar to reduce the degree of vacuum to 0.2~5 Pa.
Open the rotary shaft 11 with the pressure set to 0.5 Pa, switch the bias power supply 9 to set the fixed electrode to a low potential, and set the 5i
After applying a high frequency electric field between the J4 target 6 and the transparent substrate 1 and sputtering the SiO□ target 6 to form a film of 1100 nm on the transparent substrate, the rotating shaft 7 11 was opened and the Tb Pa Co target 7 was sputtered. Sputter 11
00n film is formed, then the rotary shutter 11 is opened and Sing is performed.
By forming a film with a thickness of 1100 nm, a magneto-optical disk having the structure shown in FIG. 2 was formed.
このようにして形成した光磁気ディスクと透明基板のス
パッタエツチングをしないで形成した光磁気ディスクと
を接着テープ(3M社製スコッチテープ#810)を使
用して剥離試験を行った。A peel test was performed on the magneto-optical disk thus formed and the magneto-optical disk formed without sputter etching the transparent substrate using an adhesive tape (Scotch tape #810 manufactured by 3M).
その結果、従来のように無処理で膜形成したちの一良品
率が約60%であるのに対し、本発明を実施した光磁気
ディスクの良品率は100%であって剥離は発生しなか
った。As a result, the yield rate of the conventional magneto-optical disk, which is formed without any treatment, is about 60%, whereas the yield rate of the magneto-optical disk in which the present invention was implemented was 100%, with no peeling occurring. Ta.
また温度60℃で相対湿度90%と一10℃との間の温
湿度サイクル試験で、本発明を実施した光磁気ディスク
は500時間経過後でも剥離が認められなかったのに対
し、無処理のものは全数についてディスクの内外周から
の剥離が認められた。In addition, in a temperature/humidity cycle test at a temperature of 60°C and a relative humidity of 90% and -10°C, the magneto-optical disk according to the present invention showed no peeling even after 500 hours, whereas the untreated one showed no peeling. In all cases, peeling from the inner and outer peripheries of the discs was observed.
実施例2 (PC基板を使用した場合):インジェクシ
ョンモールド法で型成形し、案内溝を設けたpcからな
る透明基板を第1図に示すようなスパッタ装置に設置し
、実施例1と同様に高周波スパッタエツチング処理を行
った後、SiO□からなる下地層、 Tb Fe Co
からなる保護層、 SiO□からなる保護層をそれぞれ
1100nの厚さに形成して光磁気ディスクを作り、無
処理基板を用いたものと接着性を比較した。Example 2 (when using a PC board): A transparent substrate made of PC molded by injection molding and provided with guide grooves was placed in a sputtering apparatus as shown in Fig. 1, and the same process as in Example 1 was carried out. After performing high frequency sputter etching treatment, a base layer made of SiO□, Tb Fe Co
Magneto-optical disks were prepared by forming a protective layer consisting of 1 and 1 and a protective layer consisting of SiO□ to a thickness of 1100 nm, respectively, and the adhesion was compared with that using an untreated substrate.
その結果、接着テープ(3M社製スコッチテープ#81
0)による剥離試験の結果、本発明を実施したディスク
の良品率が100%であるのに対し、無処理基板を用い
たディスクの良品率は10%であり、接着性の向上が証
明された。As a result, adhesive tape (scotch tape #81 manufactured by 3M Company) was used.
As a result of the peel test according to 0), the yield rate of the disc using the present invention was 100%, while the yield rate of the disc using the untreated substrate was 10%, proving the improvement in adhesion. .
以上記したように本発明の実施により光ディスクの透明
基板とこの上に膜形成される下地層、記録層、保護層と
の接着性が向上し、使用中における剥離が少なくなり、
信頼性を向上することができる。As described above, by implementing the present invention, the adhesion between the transparent substrate of the optical disc and the underlying layer, recording layer, and protective layer formed thereon is improved, and peeling during use is reduced.
Reliability can be improved.
第1図は本発明を実施したスパッタ装置の断面図、
第2図は光ディスクの層構成を示す部分断面図である。
図において、
1は透明基板、 2は下地層、3は記録層、
4は保護層、である。FIG. 1 is a sectional view of a sputtering apparatus embodying the present invention, and FIG. 2 is a partial sectional view showing the layer structure of an optical disk. In the figure, 1 is a transparent substrate, 2 is a base layer, 3 is a recording layer,
4 is a protective layer.
Claims (1)
形成してなる光ディスクにおいて、透明基板に不活性ガ
スによるスパッタエッチング処理を行った後、前記下地
層の形成を行うことを特徴とする光ディスクの製造方法
。An optical disc comprising a base layer, a recording layer, and a protective layer formed on a disc-shaped transparent substrate, characterized in that the base layer is formed after the transparent substrate is subjected to sputter etching treatment using an inert gas. A method for manufacturing optical discs.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5070287A JPS63217546A (en) | 1987-03-05 | 1987-03-05 | Production of optical disk |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5070287A JPS63217546A (en) | 1987-03-05 | 1987-03-05 | Production of optical disk |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63217546A true JPS63217546A (en) | 1988-09-09 |
Family
ID=12866235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5070287A Pending JPS63217546A (en) | 1987-03-05 | 1987-03-05 | Production of optical disk |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63217546A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02168452A (en) * | 1988-12-21 | 1990-06-28 | Oki Electric Ind Co Ltd | Manufacture of magneto-optical recording medium |
-
1987
- 1987-03-05 JP JP5070287A patent/JPS63217546A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02168452A (en) * | 1988-12-21 | 1990-06-28 | Oki Electric Ind Co Ltd | Manufacture of magneto-optical recording medium |
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