JPS6352351A - Protective film member and magneto-optical disk medium formed by using said member - Google Patents
Protective film member and magneto-optical disk medium formed by using said memberInfo
- Publication number
- JPS6352351A JPS6352351A JP19526886A JP19526886A JPS6352351A JP S6352351 A JPS6352351 A JP S6352351A JP 19526886 A JP19526886 A JP 19526886A JP 19526886 A JP19526886 A JP 19526886A JP S6352351 A JPS6352351 A JP S6352351A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- magneto
- film
- optical
- layer protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims description 24
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052863 mullite Inorganic materials 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 4
- 239000012788 optical film Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 2
- 239000003513 alkali Substances 0.000 abstract description 2
- 230000009257 reactivity Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910017061 Fe Co Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は希土類金属・遷移金７１．Ａ非晶質光磁気ディ
スク媒体の寿命特性を向上せしめる保護膜材料及び媒体
構成に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to rare earth metals/transition golds 71. A: This invention relates to a protective film material and medium configuration that improve the life characteristics of an amorphous magneto-optical disk medium.
例えばＴｂ−Ｆｅ、 Ｔｂ−Ｆｅ−Ｃｏ、（）ｄ−Ｔｂ
−Ｆｌａ等の希土類金属と遷移金属とから成る非晶質光
磁気薄膜は、書換え可能な光デイスクメモリ材料として
最も有望なものである。しかし、上記の構成元素は元来
、酸化しやすいものであり、表面酸化層の形成、ピンホ
ールの発生などにょ多、磁気光学的性質（例えばカー回
転角）の低下、エラー率の増大のため、その寿命は常温
常湿中で１週間〜１か月程度であυ、実用的な記録媒体
とは言えるものではなかった。そこでｋｔ。For example, Tb-Fe, Tb-Fe-Co, ()d-Tb
An amorphous magneto-optical thin film made of a rare earth metal such as -Fla and a transition metal is the most promising material for a rewritable optical disk memory. However, the above constituent elements are inherently susceptible to oxidation, and may cause problems such as formation of a surface oxidation layer, generation of pinholes, deterioration of magneto-optical properties (e.g. Kerr rotation angle), and increase in error rate. Its lifespan was about one week to one month at room temperature and humidity, and it could not be called a practical recording medium. So kt.
Ｎ１、Ｔｉ、Ｃｒ などの不動態形成のための元素の
添加、及び光磁気薄膜の外気との接触を遮断するだめの
保護膜（例えばＡＬＮＳＳ ｉ３ ＮイＳ ｉ ０２、
ＳｉＯ，Ｚｎ８など）の積層により寿命の改善がなされ
てさた。Addition of elements such as N1, Ti, Cr, etc. to form a passive state, and a protective film that blocks the contact of the magneto-optical thin film with the outside air (for example, ALNSS i3, NiSi 02,
The lifespan has been improved by stacking layers of SiO, Zn8, etc.
しかし、実用的な基板であるプラスチック〔ポリメチル
メタクリレート（以下Ｐ Ｍ Ｍ ＡとＲ記−ｔ−る）
、ポリカーボネート（以下ＰＣと略記する）〕に対して
は基板に含まれる水分が保護膜を通じ浸透し、光磁気薄
膜を劣化せしめるという問題は解決されておらず、３年
以上という実用的寿命はまだ達成されているとはいえな
い。However, plastic [polymethyl methacrylate (hereinafter referred to as PMMA and R), which is a practical substrate,
, polycarbonate (hereinafter abbreviated as PC)], the problem of moisture contained in the substrate penetrating through the protective film and deteriorating the magneto-optical thin film has not been solved, and the practical life of more than 3 years has not yet been solved. It cannot be said that this has been achieved.
すなわち、従来用いられてきた保護膜はち密性が十分で
ないという欠点があった。In other words, the conventionally used protective films have a drawback in that they do not have sufficient tightness.
本発明の目的は化学的安定性、ち否性に優れた薄膜を光
磁気薄膜として用いることによυ、ディスク媒体の寿命
を大幅に改善することにある。An object of the present invention is to significantly improve the life of disk media by using a thin film with excellent chemical stability and chirality as a magneto-optical thin film.
本発明を概説すれば、本発明の第１の発明は保護膜部材
に関する発明であって、下記一般式：％式％）
体に関する発明であって、ディスク状基体の上に、下部
層保護膜、光磁気薄膜、及び上部層保護膜がこの順に積
層されている光磁気ディスク媒体において、該下部層保
護膜及び上部層保護膜の少なくとも一方に、上記第１の
発明の保護膜部材から々る保護膜を用いたことを特徴と
する。To summarize the present invention, the first invention of the present invention relates to a protective film member, and the invention relates to a body having the following general formula: , a magneto-optical disk medium in which a magneto-optical thin film and an upper layer protective film are laminated in this order, wherein at least one of the lower layer protective film and the upper layer protective film is coated with the protective film member of the first invention. It is characterized by the use of a protective film.
光磁気薄膜の保護膜としては、化学的安定性（光磁気薄
膜との反応性、耐酸、耐アルカリ性λ機械的強度はもと
よシ、外気との遮へい、基板に含まれる水分の浸透を防
ぐため、膜のち密性がｉｉ要である。この観点から選ば
れたのがＡＡ、０３−３１０！ 系材料であり、組成
を３ Ａ Ａｘ Ｏ３・２ＳｉＯ＊〜２Ａｔ、Ｏ，・Ｓ
１０！ とするムライト薄膜である。As a protective film for a magneto-optical thin film, it is important to have chemical stability (reactivity with the magneto-optical thin film, acid resistance, alkali resistance, λ mechanical strength, shielding from the outside air, and preventing penetration of moisture contained in the substrate). Therefore, the tightness of the film is essential.From this point of view, AA, 03-310! series material was selected, with a composition of 3AxO3.2SiO*~2At,O,.S
10! It is a thin mullite film with
以下、本発明を実施例によυ更に具体的に説明するが、
本発明はこれら実施例に限定されない。Hereinafter, the present invention will be explained in more detail with reference to Examples.
The invention is not limited to these examples.
なお、第１図〜第３図は本発明の光磁気ディスク媒体の
１実施例における構成を示す断面概略図であり、符号１
はトラック案内溝付き基板、２．２−１及び２−２はム
ライト薄膜、３は光磁気薄膜、４はＳ１０．薄膜、５は
半導体レーザ光、６はＳｉＯ薄膜を意味する。Note that FIGS. 1 to 3 are schematic cross-sectional views showing the structure of one embodiment of the magneto-optical disk medium of the present invention, and reference numeral 1
2.2-1 and 2-2 are mullite thin films; 3 is a magneto-optical thin film; 4 is S10. 5 means a semiconductor laser beam, and 6 means a thin film of SiO.
実施例１
第１図に示したようａ ？Ｗ成の光磁気ディスク媒体を
作成した。１は射出成形法で成形された直後１３−のト
ラック案内溝付きＰＣ基板、２はムライト薄膜（膜厚：
１ｏｏｏＸ）、３はＴ ｂ２５Ｆ ８６゜ＣＯｏ、光磁
気１９Ｘ（ｓｏｏＸ）、４は５ｉ０２ ’ｆｊ膜（１０
００又）、５は記録、再生のだめの収束半導体レーザ光
である。各層は高周波スパッター法により成膜され、真
空をやぶらずに連続積層したものでちる。ムライト薄膜
の作成には２ｋＬ２０３−ＩＳｉＯ□の組成をもつター
ゲットを用いた。作成したディスク媒体のムフイト膜表
面に１規定の食塩水を滴下し、光磁気携の耐食性を調べ
た結果、３時間後にピンホールが発生した。ムライト薄
膜２がない試料と比較すると、本９４ ｍ例ではピンホ
ールが発生する時間は数百倍であった。これにより、ム
ライト薄膜のち密性が高く、保惑膜として有効であるこ
とが実証された。Example 1 As shown in FIG. A W-sized magneto-optical disk medium was created. 1 is a PC board with track guide grooves 13- immediately after injection molding, 2 is a mullite thin film (film thickness:
1ooo
00), 5 is a convergent semiconductor laser beam for recording and reproduction. Each layer is formed by high-frequency sputtering and is continuously laminated without breaking the vacuum. A target having a composition of 2kL203-ISiO□ was used to create the mullite thin film. A 1N saline solution was dropped on the surface of the muft film of the prepared disk medium, and the corrosion resistance of the magneto-optical film was examined. As a result, pinholes were formed after 3 hours. Compared to the sample without the mullite thin film 2, the time for pinholes to occur was several hundred times longer in this 94m example. This demonstrated that the mullite thin film has high density and is effective as a protective film.
実施例２
第２図に示したような構成の光磁気ディスク媒体を作成
した。１は実施例１と同じＰＣ基板、２はムライト薄膜
（膜厚：１ｏｏｏＸ）、３ばＴｂ２５Ｆ’９６７．５Ｃ
Ｏ７，５光磁気薄１（ａｏｏＸ）である。Example 2 A magneto-optical disk medium having the configuration shown in FIG. 2 was produced. 1 is the same PC board as in Example 1, 2 is a mullite thin film (thickness: 1oooX), and 3 is Tb25F'967.5C.
It is O7,5 magneto-optical thin 1 (aooX).
成膜は電子ビーム加熱真空蒸着法によシ行った。The film was formed by an electron beam heating vacuum evaporation method.
ムフィト蒸発源の組成は３ Ａ Ｌ２０３・２Ｓｉ０２
とし、各層は真空をやぶらず連続して積層した。作
成したディスク媒体の表面に１規定の食塩水を付着させ
、顕微鏡観察を行ったところ、１時間経過後でもピンホ
ーμの発生は全く認められなかった。本発明の有効性を
確認するため、上下層保護膜がないＴｂ−Ｆｅ−Ｃｏ
ディスク媒体について同様な耐食性試験を行ったとこ
ろ、１分間で多数のピンホールが発生した。またムライ
ト膜に替えてＺｎＳ膜（膜厚：１ｏｏｏＸ）を上下層保
護膜とした場合には、約１０分間でビンホーμが発生し
始めた。以上の比Ｖ実とテより、本発明が外気の遮へい
に浸れた特性を有することが実証された。The composition of Mufito evaporation source is 3A L203・2Si02
Each layer was laminated continuously without breaking the vacuum. When 1N saline was applied to the surface of the prepared disk medium and microscopically observed, no pinhole μ was observed even after 1 hour had elapsed. In order to confirm the effectiveness of the present invention, we tested Tb-Fe-Co without upper and lower protective films.
When a similar corrosion resistance test was conducted on a disk medium, many pinholes were generated in one minute. Furthermore, when a ZnS film (film thickness: 1oooX) was used as the upper and lower protective films in place of the mullite film, binho μ began to occur in about 10 minutes. From the above comparisons, it was demonstrated that the present invention has the characteristic of being able to shield from outside air.
実施例５
第３図に示したようなｔＮ成の光磁気ディスク媒体を作
成した。１は射出成形法で成形したトラック案内溝付き
ＰＭＭＡ基板、２−１はムライト薄膜（膜厚：８００又
）、６はｓｉｏ薄膜（膜厚５ｏｏｎ）、 ３はＴ ｂ
２．Ｆｅ６７．５Ｃｏｙ、ｓ 光磁気薄膜（ｓｏｏｎ
）、２−２はムライト薄膜（１０００又）、ムライト薄
膜の組成は３ＡＬ、Ｏ。Example 5 A tN magneto-optical disk medium as shown in FIG. 3 was prepared. 1 is a PMMA substrate with track guide grooves molded by injection molding, 2-1 is a mullite thin film (thickness: 800 mm), 6 is an SIO thin film (thickness: 5 ounces), 3 is T b
2. Fe67.5Coy,s magneto-optical thin film (soon
), 2-2 is a mullite thin film (1000 or more), and the composition of the mullite thin film is 3AL, O.
・２ Ｓ ｉ ０２であり、ディスク作成法は実施例２
と同じである。本実施例におけるＳｉＯ膜はカー効°果
のエンハンスメントを目的としたものである。・2S i 02, and the disc creation method is Example 2
is the same as The SiO film in this example is intended to enhance the Kerr effect.
１Ｎ食塩水による耐食性試験の結果は、実施例２と同様
であった。本実施例のディスク媒体については加熱加湿
中でのエージング試験（５０℃、８５チ）を行った。初
期特性はＣ／Ｎ ：５３ｄＢ、 エラー率： ｓ ｘ
１ｏ−’であり、２か月経過後、Ｃ／Ｎ ： ５３ｄ
Ｂ、 エラー率：２．５×１０−ｓとなりエラー率は
極くわずか劣化したが、Ｃ／Ｎ特性の変化は実験誤差内
では認められなかった。The results of the corrosion resistance test using 1N saline were the same as in Example 2. The disk medium of this example was subjected to an aging test under heating and humidification (50° C., 85 inches). Initial characteristics are C/N: 53dB, error rate: s x
1o-', after 2 months, C/N: 53d
B. Error rate: 2.5×10 −s, and the error rate deteriorated very slightly, but no change in C/N characteristics was observed within the experimental error.
以上説明したように、本発明のムライト薄膜は耐食性、
経時安定性共著しい効果をもち、それはムライト薄膜の
ち密性にある。したがって本発明は、復来の光磁気ディ
スクの経時安定性を大幅に改善し、妄用的な書換え可能
光磁気ディスク媒体を実現できるという利点がある。As explained above, the mullite thin film of the present invention has corrosion resistance,
It has a unique effect on stability over time, and this is due to the denseness of the mullite thin film. Therefore, the present invention has the advantage that it can significantly improve the stability over time of conventional magneto-optical disks and realize a versatile rewritable magneto-optical disk medium.
第１図〜第５図は本発明の光磁気ディスク媒体の１実施
例における構成を示す断面概略図である。1 to 5 are schematic cross-sectional views showing the structure of one embodiment of the magneto-optical disk medium of the present invention.
Claims (1)
＝１．５〜２〕で表されることを特徴とする保護膜部材
。 ２、デイスク状基体の上に、下部層保護膜、光磁気薄膜
、及び上部層保護膜がこの順に積層されている光磁気デ
イスク媒体において、該下部層保護膜及び上部層保護膜
の少なくとも一方に、下記一般式： （Ａｌ＿２Ｏ＿３）＿ｘ・（ＳｉＯ＿２）＿ｙ〔ｘ／ｙ
＝１．５〜２〕で表される保護膜部材からなる保護膜を
用いたことを特徴とする光磁気ディスク媒体。[Claims] 1. The following general formula: (Al_2O_3)_x・(SiO_2)_y [x/y
=1.5 to 2]. 2. In a magneto-optical disk medium in which a lower layer protective film, a magneto-optical thin film, and an upper layer protective film are laminated in this order on a disk-shaped substrate, at least one of the lower layer protective film and the upper layer protective film , the following general formula: (Al_2O_3)_x・(SiO_2)_y [x/y
1. A magneto-optical disk medium characterized by using a protective film made of a protective film member having the formula: =1.5 to 2].
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19526886A JPS6352351A (en) | 1986-08-22 | 1986-08-22 | Protective film member and magneto-optical disk medium formed by using said member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19526886A JPS6352351A (en) | 1986-08-22 | 1986-08-22 | Protective film member and magneto-optical disk medium formed by using said member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6352351A true JPS6352351A (en) | 1988-03-05 |
Family
ID=16338327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19526886A Pending JPS6352351A (en) | 1986-08-22 | 1986-08-22 | Protective film member and magneto-optical disk medium formed by using said member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6352351A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03242843A (en) * | 1990-01-31 | 1991-10-29 | Internatl Business Mach Corp <Ibm> | Magneto-optic storage medium and dielectric layer thereof |
-
1986
- 1986-08-22 JP JP19526886A patent/JPS6352351A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03242843A (en) * | 1990-01-31 | 1991-10-29 | Internatl Business Mach Corp <Ibm> | Magneto-optic storage medium and dielectric layer thereof |
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