JPS632143B2 - - Google Patents

Info

Publication number
JPS632143B2
JPS632143B2 JP10052481A JP10052481A JPS632143B2 JP S632143 B2 JPS632143 B2 JP S632143B2 JP 10052481 A JP10052481 A JP 10052481A JP 10052481 A JP10052481 A JP 10052481A JP S632143 B2 JPS632143 B2 JP S632143B2
Authority
JP
Japan
Prior art keywords
groove
conductivity type
layer
semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10052481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS583242A (ja
Inventor
Yoshinobu Monma
Toshihiko Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10052481A priority Critical patent/JPS583242A/ja
Publication of JPS583242A publication Critical patent/JPS583242A/ja
Publication of JPS632143B2 publication Critical patent/JPS632143B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP10052481A 1981-06-30 1981-06-30 半導体装置の製造方法 Granted JPS583242A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10052481A JPS583242A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10052481A JPS583242A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS583242A JPS583242A (ja) 1983-01-10
JPS632143B2 true JPS632143B2 (en, 2012) 1988-01-18

Family

ID=14276340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10052481A Granted JPS583242A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS583242A (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649625A (en) * 1985-10-21 1987-03-17 International Business Machines Corporation Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
US5004703A (en) * 1989-07-21 1991-04-02 Motorola Multiple trench semiconductor structure method
KR100242466B1 (ko) * 1996-06-27 2000-02-01 김영환 채널스탑이온주입에 따른 좁은폭효과 방지를 위한 소자분리 구조를 갖는 반도체장치 및 그 제조방법
KR100719719B1 (ko) 2006-06-28 2007-05-18 주식회사 하이닉스반도체 반도체 소자의 제조방법

Also Published As

Publication number Publication date
JPS583242A (ja) 1983-01-10

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