JPS63200607A - Manufacture of surface acoustic wave device - Google Patents
Manufacture of surface acoustic wave deviceInfo
- Publication number
- JPS63200607A JPS63200607A JP3275587A JP3275587A JPS63200607A JP S63200607 A JPS63200607 A JP S63200607A JP 3275587 A JP3275587 A JP 3275587A JP 3275587 A JP3275587 A JP 3275587A JP S63200607 A JPS63200607 A JP S63200607A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric substrate
- organic resin
- film
- acoustic wave
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000010897 surface acoustic wave method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000004020 conductor Substances 0.000 claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 238000007740 vapor deposition Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000007788 roughening Methods 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 abstract description 5
- 229910012463 LiTaO3 Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
し発明の目的]
(産業上の利用分野)
本発明は、例えばフィルタ、共振子、遅延線等に用いら
れる弾性表面波装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION OBJECTS OF THE INVENTION Field of Industrial Application The present invention relates to a method of manufacturing a surface acoustic wave device used for, for example, a filter, a resonator, a delay line, or the like.
(従来の技術)
従来より、フィルタ、共振子および遅延線等に適用され
る弾性表面波装置を製造する方法としては、圧電基板上
への櫛歯状電極を有する導体パターンの形成をフォトリ
ングラフィ技術により行うことが一般である。(Prior Art) Conventionally, as a method for manufacturing surface acoustic wave devices applied to filters, resonators, delay lines, etc., photolithography has been used to form a conductor pattern having comb-shaped electrodes on a piezoelectric substrate. This is generally done using technology.
このようなフォトリソグラフィ技術を用いて弾性表面波
装置を製造する従来の方法を第2図に基づいて説明する
。A conventional method for manufacturing a surface acoustic wave device using such photolithography technology will be explained based on FIG. 2.
同図に示すように、先ず、矩形状の圧電基板1の導体パ
ターンが形成される側の表面1aを鏡面研磨しく第2図
−A)、さらにこの圧電基板1のの裏面1bに面粗し加
工あるいは溝加工を施す(第2図−B)。次に、鏡面研
磨された圧電基板1の表面1aに金属蒸着膜2を形成し
く第2図−C)、さらにこの上にレジスト膜(図示せず
)を形成する。この後、所望の導体パターンとほぼ等し
いパターンを多数有するマスク(図示せず)を用いて露
光により上記レジスト膜上に上記パターンに対応したそ
の未露光部分を形成し、このレジスト膜の露光部分を溶
解除去する。そして、これにより露出した金属蒸着膜2
の部分をエツチングし、しかる後、上記レジスト膜の未
露光部分を除去して櫛歯状電極(図示せず)を有する多
数の導体パターン3が圧電基板1上に形成される(第2
図−D)。この後、この多数の導体パターン3が表面l
a上に形成された圧電基板1を個々の導電パターン3a
ごとの圧電チップ基板4に分割切断しく第2図−E)、
取出し、弾性表面波装置の製造工程か完了する(第2図
−F)。As shown in the figure, first, the surface 1a of the rectangular piezoelectric substrate 1 on which the conductive pattern is formed is mirror-polished (FIG. 2-A), and then the back surface 1b of the piezoelectric substrate 1 is roughened. Machining or grooving is performed (Figure 2-B). Next, a metal vapor deposition film 2 is formed on the mirror-polished surface 1a of the piezoelectric substrate 1 (FIG. 2-C), and a resist film (not shown) is further formed thereon. Thereafter, an unexposed portion corresponding to the pattern is formed on the resist film by exposure using a mask (not shown) having a large number of patterns almost identical to the desired conductor pattern, and the exposed portion of the resist film is exposed to light. Dissolve and remove. Then, the metal vapor deposited film 2 exposed by this
, and then remove the unexposed portions of the resist film to form a large number of conductor patterns 3 having comb-like electrodes (not shown) on the piezoelectric substrate 1 (second
Figure-D). After this, this large number of conductor patterns 3 are formed on the surface l.
The piezoelectric substrate 1 formed on a is connected to the individual conductive patterns 3a.
Figure 2-E)
The surface acoustic wave device is taken out and the manufacturing process of the surface acoustic wave device is completed (FIG. 2-F).
(発明が解決しようとする問題点)
しかしながら、このような従来の製造方法では、圧電基
板裏面の面粗し加工あるいは溝加工を施した結果生じる
圧電基板のかけらが、金属膜蒸着時にこの金属蒸着膜内
に混入したり、また蒸着後においてもこのかけらがこの
蒸着股上に付着してしまい、これが弾性表面波装置の櫛
歯状電極、その他害電極指の断線、ショート等の原因と
なるといった問題点があった。(Problem to be Solved by the Invention) However, in such conventional manufacturing methods, fragments of the piezoelectric substrate that are generated as a result of surface roughening or groove processing on the back surface of the piezoelectric substrate are removed during metal film deposition. The problem is that these fragments may get mixed into the film, or even after vapor deposition, they may adhere to the evaporated crotch, causing disconnection or short circuits in the comb-like electrodes of surface acoustic wave devices and other harmful electrode fingers. There was a point.
本発明はこのような問題点を解決するためのもので、圧
電基板裏面の面粗し加工あるいは溝加工により生じる圧
電基板のかけら等の金属蒸着膜への混入を防止し、導体
配線の断線、ショート等による特性劣化を防止と歩留り
の向上を図って、信頼性の高い弾性表面波装置を製造す
ることができる弾性表面波装置の製造方法を提供するこ
とを目的としている。The present invention is intended to solve these problems, and prevents pieces of the piezoelectric substrate generated by surface roughening or groove processing on the back side of the piezoelectric substrate from being mixed into the metal deposited film, and prevents disconnection of conductor wiring, It is an object of the present invention to provide a method for manufacturing a surface acoustic wave device that can prevent characteristic deterioration due to short circuits and the like and improve yield, thereby manufacturing a highly reliable surface acoustic wave device.
[発明の構成]
(問題点を解決するための手段)
本発明は上記目的を達成するために、圧電基板の一方の
面を鏡面研磨する工程と、この鏡面研磨された前記圧電
基板の他方の面に面粗し加工あるいは溝加工を施す工程
と、この面粗し加工あるいは溝加工が施された面に有機
樹脂を塗布して有機樹脂膜を形成する工程と、鏡面研磨
された前記圧電基板の一方の面に金属蒸着膜、レジスト
膜を順次形成し所望の導体パターンとほぼ等しいパター
ンを複数有するマスクを用いて露光してこの露光部分に
あたるレジスト膜を溶解除去する工程と、この溶解除去
された前記レジスト膜の部分にあたる前記金属蒸着膜を
エツチングにより除去して複数の導体パターンを形成し
残ったレジスト膜を除去する工程と、この複数の導体パ
ターンが形成された圧電基板を個々の導体パターンごと
に切断する工程と、この個々の導体パターンに切断され
た圧電基板を前記有機樹脂膜から剥がし取る工程とから
なることを特徴としている。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention includes a step of mirror-polishing one surface of a piezoelectric substrate, and a step of mirror-polishing the other surface of the piezoelectric substrate that has been mirror-polished. a step of roughening or grooving a surface; a step of applying an organic resin to the surface with the roughening or grooving to form an organic resin film; and a mirror-polished piezoelectric substrate. A step in which a metal vapor deposited film and a resist film are sequentially formed on one surface of the conductor, and exposed using a mask having a plurality of patterns approximately equal to the desired conductor pattern to dissolve and remove the resist film corresponding to the exposed portion; A step of removing the metal vapor deposited film corresponding to the resist film portion by etching to form a plurality of conductor patterns and removing the remaining resist film, and a step of removing the piezoelectric substrate on which the plurality of conductor patterns are formed into individual conductor patterns. The method is characterized by comprising a step of cutting the piezoelectric substrate into individual conductor patterns, and a step of peeling off the piezoelectric substrate cut into individual conductor patterns from the organic resin film.
(作用)
本発明の弾性表面波装置の製造方法において、面粗し加
工あるいは溝加工が施された面に有機樹脂を塗布して有
機樹脂膜を形成したので、圧電基板裏面の面粗し加工あ
るいは溝加工により生じる圧電基板のかけら等の金属蒸
着膜への混入を防止し、導体配線の断線、ショート等に
よる特性劣化を防止と歩留りの向上を図って、信頼性の
高い弾性表面波装置を製造することができるようになる
。(Function) In the method for manufacturing a surface acoustic wave device of the present invention, since an organic resin is applied to the surface that has been roughened or grooved to form an organic resin film, the back surface of the piezoelectric substrate can be roughened. Alternatively, it is possible to prevent pieces of the piezoelectric substrate generated by groove processing from getting into the metal evaporated film, prevent property deterioration due to conductor wiring disconnections, short circuits, etc., and improve yields, thereby producing highly reliable surface acoustic wave devices. be able to manufacture.
(実施例) 以下、本発明の実施例を図面に基づいて説明する。(Example) Embodiments of the present invention will be described below based on the drawings.
第1図は本発明の一実施例の弾性表面波装置の製造工程
を示す図である。FIG. 1 is a diagram showing the manufacturing process of a surface acoustic wave device according to an embodiment of the present invention.
同図に示すように、この一実施例の製造方法においては
、先ず、例えばL i T a O3等からなる矩形状
の圧電基板11の表面11aを鏡面研磨しく第1図−A
)、さらにこの圧電基板11の裏面11bに面粗し加工
あるいは溝加工を施す(第1図−B)。この後、この面
粗し加工あるいは溝加工が施された圧電基板11の裏面
11bに例えばシリコン系等の有機樹脂を塗布して有機
樹脂膜12を形成する(第1図−〇)。次に、鏡面研磨
された圧電基板11の表面上11aに例えばAJ2等か
らなる金属蒸@膜13を形成しく第1図−D)、さらに
この上にポジ形レジストを塗布してレジストwA(図示
せず)を形成する。この後、所望の導体パターンとほぼ
等しいパターンを多数有するマスク(図示せず)を用い
て露光により上記レジスト膜上に上記パターンに対応し
たその未露光部分を形成してこれを現像液を用いて溶解
除去する。As shown in the figure, in the manufacturing method of this embodiment, first, the surface 11a of the rectangular piezoelectric substrate 11 made of, for example, LiTaO3 is mirror polished.
), and further surface roughening or groove processing is performed on the back surface 11b of this piezoelectric substrate 11 (FIG. 1-B). Thereafter, an organic resin, such as a silicon-based resin, is applied to the back surface 11b of the piezoelectric substrate 11, which has been roughened or grooved, to form an organic resin film 12 (FIG. 1--). Next, a metal evaporated film 13 made of, for example, AJ2 is formed on the surface 11a of the mirror-polished piezoelectric substrate 11 (FIG. 1-D), and a positive resist is applied thereon to form a resist wA (FIG. 1-D). (not shown). Thereafter, an unexposed portion corresponding to the pattern is formed on the resist film by exposure using a mask (not shown) having a large number of patterns almost identical to the desired conductor pattern, and this is removed using a developer. Dissolve and remove.
そして、これにより露出した金属蒸着膜13の部分を例
えば酢酸、硝酸およびリン酸の混合液等のエツチング液
を用いてエツチングし、しかる後、上記レジスト膜の未
露光部分を露光し現像液を用いて溶解除去し、櫛歯状電
極(図示せず)を有する多数の導体パターン14が圧電
基板11上に形成される(第1図−E)。この後、この
多数の導体パターン14が形成された圧電基板11を個
々の導体パターン14aごとに分割切断しく第1図−F
)、この分割切断された圧電チップ基板15を上記した
有機樹脂膜12から剥がし取る(第1図−G)。そして
、この剥がし取られた圧電チップ基板15を図示しない
ステムに固定し、ボンデインク接続工程、ハーメチック
工程を経て弾性表面波装置の製造工程が完了する。Then, the exposed portion of the metal vapor deposited film 13 is etched using an etching solution such as a mixed solution of acetic acid, nitric acid, and phosphoric acid, and then the unexposed portion of the resist film is exposed and a developer is used. Then, a large number of conductive patterns 14 having comb-like electrodes (not shown) are formed on the piezoelectric substrate 11 (FIG. 1-E). After that, the piezoelectric substrate 11 on which a large number of conductor patterns 14 are formed is cut into pieces into individual conductor patterns 14a.
), the piezoelectric chip substrate 15 thus divided and cut is peeled off from the organic resin film 12 described above (FIG. 1-G). Then, this peeled-off piezoelectric chip substrate 15 is fixed to a stem (not shown), and the manufacturing process of the surface acoustic wave device is completed through a bonding and ink connection process and a hermetic process.
この実施例の弾性表面波装置の製造方法によれば、圧電
基板11の裏面11bに面粗し加工あるいは準加工を施
した後、この裏面11bに有機樹脂を塗布して有機樹脂
膜12を形成したので、圧電基板11の裏面11bから
発生する圧電基板11のかけらの金属蒸着膜13への侵
入と付着を防止することができ、導体配線の断線、ショ
ート等による特性劣化の防止と歩留りの向上を図ること
が可能となる。According to the method for manufacturing a surface acoustic wave device of this embodiment, after roughening or semi-processing is performed on the back surface 11b of the piezoelectric substrate 11, an organic resin is applied to the back surface 11b to form an organic resin film 12. Therefore, it is possible to prevent fragments of the piezoelectric substrate 11 generated from the back surface 11b of the piezoelectric substrate 11 from invading and adhering to the metal vapor deposited film 13, thereby preventing property deterioration due to disconnection or short circuit of conductor wiring, and improving yield. It becomes possible to aim for.
また、第3図および第4図はこの実施例の弾性表面波装
置の製造方法による効果を示している。Furthermore, FIGS. 3 and 4 show the effects of the method of manufacturing the surface acoustic wave device of this embodiment.
第3図はこの実施例のM遣方法により製造された弾性表
面波装置と従来の製造方法により製造された弾性表面波
装置との電極欠陥の発生頻度を示す図である。この図に
示すように、従来の製造方法により製造された弾性表面
波装置では、一つの装置に対して10力所以上の電極欠
陥が頻繁に発生しているが、この実施例の製造方法によ
り製造された弾性表面波装置では10カ所を越える電極
欠陥が発生した装置はなく、そのほとんどが電極欠陥数
1〜5カ所のものに集中している。このことから、圧電
基板11の電極欠陥数はこの実施例の製造方法により低
減できるものと知ることができる。FIG. 3 is a diagram showing the frequency of occurrence of electrode defects in the surface acoustic wave device manufactured by the M method of this embodiment and the surface acoustic wave device manufactured by the conventional manufacturing method. As shown in this figure, in surface acoustic wave devices manufactured using conventional manufacturing methods, electrode defects of 10 or more force points frequently occur in one device, but with the manufacturing method of this example, None of the manufactured surface acoustic wave devices had electrode defects in more than 10 locations, and most of them were concentrated in devices with electrode defects in 1 to 5 locations. From this, it can be seen that the number of electrode defects in the piezoelectric substrate 11 can be reduced by the manufacturing method of this embodiment.
また、第4図は弾性表面波装置の中心周波数(横軸)と
電極欠陥数の平均値(縦軸)との関係からこの実施例の
製造方法の効果を示す図である。Further, FIG. 4 is a diagram showing the effect of the manufacturing method of this embodiment from the relationship between the center frequency (horizontal axis) of the surface acoustic wave device and the average value of the number of electrode defects (vertical axis).
同図において、実線で示す従来の製造方法による弾性表
面波装置では、中心周波数が大きなものになるに従いそ
の導体配線の幅が大きくなることから、電極欠陥数の平
均値も上がる傾向にあり、特に中心周波数50MHz以
上からこの傾向が顕著なものとなるが、この実施例の方
法を用いて製造することにより、図中点線に示すごとく
、電極欠陥数を効果的に低減させることができるように
なる。In the same figure, in the conventional surface acoustic wave device shown by the solid line, as the center frequency increases, the width of the conductor wiring increases, so the average number of electrode defects also tends to increase. This tendency becomes noticeable from a center frequency of 50 MHz or above, but by manufacturing using the method of this example, the number of electrode defects can be effectively reduced as shown by the dotted line in the figure. .
[発明の効果]
本発明の弾性表面波装置の製造方法によれば、圧電基板
裏面の面粗し加工あるいは溝加工により生じる圧電基板
のかけら等の金属蒸着膜への混入−つ −
を防止し、導体配線の断線、ショート等による特性劣化
を防止と歩留りの向上を図って、信頼性の高い弾性表面
波装置を製造することができるようになる。[Effects of the Invention] According to the method for manufacturing a surface acoustic wave device of the present invention, it is possible to prevent pieces of the piezoelectric substrate, etc., generated by surface roughening or groove processing on the back surface of the piezoelectric substrate from being mixed into the metal vapor deposited film. It becomes possible to manufacture highly reliable surface acoustic wave devices by preventing property deterioration due to conductor wiring breaks, short circuits, etc. and improving yield.
第1図は本発明の一実施例の弾性表面波装置の製造方法
を説明するための各工程ごとの断面図、第2図は従来の
弾性表面波装置の製造方法を説明するための各工程ごと
の断面図、第3図は本発明の詳細な説明するための図、
第4図はその効果を中心周波数との関係から説明するた
めの図である。
11・・・・・・圧電基板
12・・・・・・有機樹脂膜
13・・・・・・金属蒸着膜FIG. 1 is a cross-sectional view of each process for explaining the manufacturing method of a surface acoustic wave device according to an embodiment of the present invention, and FIG. 2 is a sectional view of each process for explaining the manufacturing method of a conventional surface acoustic wave device. FIG. 3 is a diagram for detailed explanation of the present invention,
FIG. 4 is a diagram for explaining the effect in terms of the relationship with the center frequency. 11... Piezoelectric substrate 12... Organic resin film 13... Metal vapor deposited film
Claims (1)
鏡面研磨された前記圧電基板の他方の面に面粗し加工あ
るいは溝加工を施す工程と、 この面粗し加工あるいは溝加工が施された面に有機樹脂
を塗布して有機樹脂膜を形成する工程と、鏡面研磨され
た前記圧電基板の一方の面に金属蒸着膜、レジスト膜を
順次形成し所望の導体パターンとほぼ等しいパターンを
複数有するマスクを用いて露光してこの露光部分にあた
るレジスト膜を溶解除去する工程と、 この溶解除去された前記レジスト膜の部分にあたる前記
金属蒸着膜をエッチングにより除去して複数の導体パタ
ーンを形成し残ったレジスト膜を除去する工程と、 この複数の導体パターンが形成された圧電基板を個々の
導体パターンごとに分割切断する工程と、この個々の導
体パターンに分割切断された圧電基板を前記有機樹脂膜
から剥がし取る工程とからなることを特徴とする弾性表
面波装置の製造方法。(1) A step of mirror-polishing one surface of the piezoelectric substrate, a step of performing surface roughening or groove processing on the other surface of the mirror-polished piezoelectric substrate, and this surface roughening or groove processing. a step of applying an organic resin to the applied surface to form an organic resin film; and a step of sequentially forming a metal vapor deposition film and a resist film on one surface of the mirror-polished piezoelectric substrate in a pattern substantially equal to the desired conductor pattern. A step of dissolving and removing the resist film corresponding to the exposed portion by exposing using a mask having a plurality of resist films, and removing the metal vapor deposited film corresponding to the portion of the resist film that has been dissolved and removed by etching to form a plurality of conductor patterns. a step of removing the remaining resist film; a step of cutting the piezoelectric substrate on which a plurality of conductor patterns are formed into individual conductor patterns; and a step of cutting the piezoelectric substrate into individual conductor patterns into A method for manufacturing a surface acoustic wave device, comprising the step of peeling off a resin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3275587A JPS63200607A (en) | 1987-02-16 | 1987-02-16 | Manufacture of surface acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3275587A JPS63200607A (en) | 1987-02-16 | 1987-02-16 | Manufacture of surface acoustic wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63200607A true JPS63200607A (en) | 1988-08-18 |
Family
ID=12367657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3275587A Pending JPS63200607A (en) | 1987-02-16 | 1987-02-16 | Manufacture of surface acoustic wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63200607A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6996883B2 (en) * | 1999-01-28 | 2006-02-14 | General Electric Company | Method of manufacturing a multi-piezoelectric layer ultrasonic transducer for medical imaging |
US7331092B2 (en) * | 2003-05-14 | 2008-02-19 | Fujitsu Media Devices Limited | Method and manufacturing surface acoustic wave device |
US8104155B2 (en) * | 2008-03-28 | 2012-01-31 | Fujifilm Corporation | Method of manufacturing a piezoelectric actuator |
-
1987
- 1987-02-16 JP JP3275587A patent/JPS63200607A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6996883B2 (en) * | 1999-01-28 | 2006-02-14 | General Electric Company | Method of manufacturing a multi-piezoelectric layer ultrasonic transducer for medical imaging |
US7331092B2 (en) * | 2003-05-14 | 2008-02-19 | Fujitsu Media Devices Limited | Method and manufacturing surface acoustic wave device |
US8104155B2 (en) * | 2008-03-28 | 2012-01-31 | Fujifilm Corporation | Method of manufacturing a piezoelectric actuator |
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