JPS6319878A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS6319878A JPS6319878A JP61162951A JP16295186A JPS6319878A JP S6319878 A JPS6319878 A JP S6319878A JP 61162951 A JP61162951 A JP 61162951A JP 16295186 A JP16295186 A JP 16295186A JP S6319878 A JPS6319878 A JP S6319878A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- light
- semiconductor
- region
- property
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 239000011347 resin Substances 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 42
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 230000006866 deterioration Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 3
- 208000032544 Cicatrix Diseases 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 231100000241 scar Toxicity 0.000 abstract 1
- 230000037387 scars Effects 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体受光装置に係り、特に半導体受光素子を
有し、樹脂封止により封止が行われる半導体受光装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor light receiving device, and more particularly to a semiconductor light receiving device having a semiconductor light receiving element and sealed by resin sealing.
［従来技術］
半導体受光装置の封止方法の一つに、半導体受光素子等
を光透過性樹脂によって封止する、いわゆるクリアモー
ルドパッケージがある。[Prior Art] One of the methods for sealing a semiconductor light receiving device is a so-called clear mold package in which a semiconductor light receiving element and the like are sealed with a light-transmitting resin.
第２図はクリアモールドパッケージによって封止を行っ
た半導体受光装置の一例を示す断面図である。FIG. 2 is a sectional view showing an example of a semiconductor light receiving device sealed with a clear mold package.
同図において、１は封止体たる光透過性樹脂、２は半導
体受光素子たる半導体チップ、３はリードフレーム、４
は半導体チップ２とリードフレーム３とを接続させるポ
ンディングワイヤである。In the figure, 1 is a light-transmitting resin as a sealing body, 2 is a semiconductor chip as a semiconductor light-receiving element, 3 is a lead frame, and 4
is a bonding wire that connects the semiconductor chip 2 and the lead frame 3.
［発明が解決しようとする問題点］
上記半導体受光装置は一度に多数の素子を樹脂モールド
することができることから、量産性に優れ、コスト低減
ができ、且つ小型化ができる等の利点を有するが、以下
に示すような問題点を有していた。[Problems to be Solved by the Invention] The above-mentioned semiconductor photodetector has advantages such as being able to mold a large number of elements in resin at the same time, being able to be mass-produced, reducing costs, and being miniaturized. , had the following problems.
（１）半導体チップ２と光透過性樹脂１との膨張係数の
違いにより応力が発生し、特性を変動させるとともに、
極端な場合半導体チップ２の割れあるいは配線の変形を
引き起こす。(1) Stress is generated due to the difference in expansion coefficient between the semiconductor chip 2 and the light-transmitting resin 1, which changes the characteristics and
In extreme cases, this may cause cracking of the semiconductor chip 2 or deformation of the wiring.
（２）光透過性樹脂表面のキズ、表面及び内部に存在す
る異物が入射してくる光を遮光又は乱反射させ、半導体
受光装置の特性を劣化させる。(2) Scratches on the surface of the light-transmitting resin and foreign substances present on the surface and inside the resin block or diffusely reflect the incident light, deteriorating the characteristics of the semiconductor light receiving device.
（３）光透過性樹脂と外気との界面での光の反射が半導
体受光素子の特性に影響を及ぼす。入射光は反射により
減じられ、また半導体チー７プ表面で反射した光は、光
透過性樹脂と外気との界面で再び反射され、半導体受光
素子の出力特性を変動させる。(3) Reflection of light at the interface between the light-transmitting resin and the outside air affects the characteristics of the semiconductor light-receiving element. The incident light is attenuated by reflection, and the light reflected on the surface of the semiconductor chip 7 is reflected again at the interface between the light-transmitting resin and the outside air, changing the output characteristics of the semiconductor light-receiving element.
（４）光透過性樹脂の分光特性が半導体受光装置全体の
分光感度特性に影響を学える。例えば、紫外線は樹脂に
よって遮蔽され、紫外線センサとしてクリアモールドパ
ッケージを用いることは難しい。(4) Learn how the spectral characteristics of the light-transmitting resin affect the spectral sensitivity characteristics of the entire semiconductor light receiving device. For example, ultraviolet rays are blocked by resin, making it difficult to use a clear mold package as an ultraviolet sensor.
（５）クリアモールドパッケージは全体が透明であり、
ボンディングワイヤからの反射光等の周囲からの光の回
り込みの影響を受けやすい。(5) The clear mold package is entirely transparent;
It is susceptible to the influence of light from the surroundings, such as reflected light from bonding wires.
以上の問題点の中で、特に（２）、（３）。Among the above problems, especially (2) and (3).
（５）は自動焦点機構のように高感度、高精度な半導体
受光素子が要求される用途では大きな障害となっていた
。(5) has been a major hindrance in applications that require a highly sensitive and highly accurate semiconductor light receiving element, such as automatic focusing mechanisms.
本発明は上記の問題点を解決し、歩留りを向上させ、低
コストで、高感度、高精度、且つ信頼性の高い半導体受
光装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, improve yield, and provide a low-cost, highly sensitive, highly accurate, and highly reliable semiconductor light-receiving device.
［Ｇ１題点を解決するための手段］
上記の問題点は、半導体受光素子を有し、樹脂封止によ
り封止が行われる半導体受光装置において。[Means for Solving Problem G1] The above problem occurs in a semiconductor light-receiving device that has a semiconductor light-receiving element and is sealed by resin sealing.
少なくとも前記半導体受光素子の受光領域が封止体に覆
われていないことを特徴とする本発明の半導体チップこ
によって解決される。The problem is solved by the semiconductor chip of the present invention, characterized in that at least the light-receiving region of the semiconductor light-receiving element is not covered with a sealing body.
［作用］
本発明は半導体受光素子の少なくとも受光領域を封止体
で覆わないことにより、封止体自体の分光透過率等の光
学的特性、熱膨張率等の熟的特性等の材料特性に起因す
る不良要因、性能劣化要因を除去し、また樹脂と外気と
の界面における反射等の半導体受光装置の構成に起因す
る不良要因。[Function] By not covering at least the light-receiving area of the semiconductor light-receiving element with the sealing body, the present invention improves the optical properties such as the spectral transmittance of the sealing body itself, and the material properties such as the coefficient of thermal expansion. Eliminate defective factors and performance deterioration factors caused by the failure, and also remove defective factors caused by the configuration of the semiconductor photodetector, such as reflections at the interface between the resin and the outside air.
性能劣化要因を除去し、加えてキズ、異物等製造工程に
おいて発生する不良要因、性ｆ＆劣化要因を除去しよう
とするものである。The purpose is to eliminate factors that cause performance deterioration, as well as defective factors such as scratches and foreign objects that occur during the manufacturing process, and factors that cause performance deterioration.
［実施例］ 以下、本発明の実施例を図面を用いて詳細に説明する。[Example] Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の半導体受光装置の一実施例を示す断面
図である。なお、第２図に示した構成部材と同一部材に
ついては、同一番号を付し説明を略す。FIG. 1 is a sectional view showing an embodiment of the semiconductor light receiving device of the present invention. It should be noted that the same members as those shown in FIG. 2 are given the same numbers and the description thereof will be omitted.
同図において、５は中空領域、６は半導体受光素子たる
半導体チップ２上の受光領域、７は光透過性部材、８は
封止体たる樹脂である。なお、樹脂８は後述するように
、第２図に示したような光透過性樹脂である必要はなく
、光透過性を有しない樹脂でもよい。In the figure, 5 is a hollow region, 6 is a light receiving area on the semiconductor chip 2 which is a semiconductor light receiving element, 7 is a light transmitting member, and 8 is a resin which is a sealing body. Note that, as will be described later, the resin 8 does not need to be a light-transmitting resin as shown in FIG. 2, and may be a resin that does not have light-transmitting properties.
本発明の特徴は半導体チップ２上の受光領域６及びその
近傍上に樹脂がなく中空領域となっていることである。A feature of the present invention is that there is no resin on the light receiving area 6 on the semiconductor chip 2 and the vicinity thereof, and the area is a hollow area.
すなわち、本発明は中空領域５が設けられ、半導体チッ
プ２と樹脂８との接触面積が少なくなることから応力が
軽減され（問題点（１）の軽減）、樹脂８の一部が除去
されて入射光の経路が中空領域となるので、樹脂表面の
キズ、樹脂表面及び内部のゴミ等の異物、樹脂の分光透
過特性を考慮する必要がなくなり、また入射光の経路が
設けられるので必ずしも光透過性の樹脂を用いなくても
よく、その結果光の反射笠による周囲からの光の回り込
みを考慮する必要がなくなり（問題点（２）９問題点（
４）２問題点（５）の解決）、半導体チップ２上の受光
領域６と樹脂８との界面がなくなるので界面による反射
光を考慮する必要がなくなる（問題点（３）の解決）等
のことから、製造工程上の歩留りを向上させ、取り扱い
を簡易にすることができ、且つ高感度、高精度、高信頼
性である利点を有している。That is, in the present invention, since the hollow region 5 is provided and the contact area between the semiconductor chip 2 and the resin 8 is reduced, stress is reduced (reduction of problem (1)), and a part of the resin 8 is removed. Since the path of the incident light is a hollow area, there is no need to consider scratches on the resin surface, foreign matter such as dust on the resin surface and inside, and the spectral transmission characteristics of the resin. As a result, there is no need to consider the reflection of light from the surroundings due to the light reflecting shade (problem (2)).
4) Solution of 2 Problems (5)), Since there is no interface between the light-receiving area 6 on the semiconductor chip 2 and the resin 8, there is no need to consider the light reflected by the interface (Solution of Problem (3)), etc. Therefore, the yield in the manufacturing process can be improved, handling can be simplified, and it has the advantages of high sensitivity, high precision, and high reliability.
一般的に半導体素子はアルミニウムを主体とした物質に
より配線されることが多く、従ってポンディングワイヤ
が接続される半導体素子上のパッド部もアルミニウムで
構成されることが多い、この場合マイグレーション、絶
縁性等から一般的に耐湿性が問題となり、樹脂等で封止
されていることが望ましい。In general, semiconductor devices are often wired using materials mainly made of aluminum, and therefore the pads on the semiconductor device to which bonding wires are connected are often also made of aluminum.In this case, migration and insulation For this reason, moisture resistance is generally an issue, and it is desirable to seal it with resin or the like.
本発明においては、第１図に示すように、前記パッド部
等の配線部は樹脂で封止されているので前記の耐湿性等
の問題は軽減される。受光領域６及びその近傍上におい
ては、樹脂が除去されているために、耐湿性等の信頼性
の問題が起こる心配があるが、半導体受光装置の分光特
性に応じた分光透過率を有する光透過性部材７を中空領
域５を覆うように樹脂８に固着し、外気と遮断すること
によって解決される。さらに半導体受光素子をシリコン
ナイトライドのようなパッシベーション膜を被覆するこ
とによって、素子自体を高信頼性化すれば、本発明によ
るパッケージ構造を用いても半導体チップごとしての信
頼性を失うことはない。In the present invention, as shown in FIG. 1, since the wiring portions such as the pad portion are sealed with resin, the above-mentioned problems such as moisture resistance are alleviated. Since the resin is removed from the light-receiving region 6 and its vicinity, there is a concern that reliability problems such as moisture resistance may occur. This problem can be solved by fixing the elastic member 7 to the resin 8 so as to cover the hollow region 5 and sealing it off from the outside air. Furthermore, if the semiconductor photodetector element itself is made highly reliable by coating it with a passivation film such as silicon nitride, the reliability of the semiconductor chip itself will not be lost even if the package structure according to the present invention is used. .
上記実施例において、半導体受光素子はＩＣ化されて、
他の信号処理回路等と共に一チップ上に搭載されたもの
であってもよい。In the above embodiment, the semiconductor light receiving element is integrated into an IC,
It may be mounted on one chip together with other signal processing circuits and the like.
なお、樹脂封止の方法としては、あらかじめ中空のプラ
スチックパッケージを準備しておき、それに半導体受光
素子等を挿入して固定し、その後に配線を行い、最後に
光透過性部材で蓋をする樹脂封止方法があるが、本発明
の半導体受光装置はこの樹脂封止方法とは異り、種々の
利点を有しており１例えばパッド部等の配！ａ部は樹脂
で封１］−されていることから、この部分の信頼性が保
たれる利点を有する。Note that the resin sealing method involves preparing a hollow plastic package in advance, inserting a semiconductor light-receiving element, etc. into it and fixing it, then wiring, and finally covering the resin with a light-transmitting material. Although there are other sealing methods, the semiconductor light receiving device of the present invention has various advantages over this resin sealing method. Since part a is sealed with resin, this part has the advantage of maintaining reliability.
［発明の効果］
以上詳細に説明したように、本発明によれば、半導体受
光素子の少なくとも受光領域を封止体で覆わないことに
より、封止体自体の分光透過率等の光学的特性、熱膨張
率等の熱的特性等の材＃４特性に起因する不良要因、性
能劣化要因を除去し、また樹脂と外気との界面における
反射等の半導体受光装置の構成に起因する不良要因、性
能劣化要因を除去し、加えてキズ、異物等製造工程にお
いて発生する不良要因、性１七劣化要因を除去すること
ができるので、
製造工程北の歩留りを向上させ、取り扱いが簡易であり
、低コストで、高感度、高精度、且つ信頼性の高い半導
体受光装置を提供することができる。[Effects of the Invention] As described above in detail, according to the present invention, by not covering at least the light-receiving region of the semiconductor light-receiving element with the encapsulant, the optical properties such as the spectral transmittance of the encapsulant itself, Eliminate failure factors and performance deterioration factors caused by material #4 characteristics such as thermal properties such as coefficient of thermal expansion, and eliminate failure factors and performance deterioration factors caused by the configuration of the semiconductor photodetector such as reflection at the interface between resin and outside air. It is possible to eliminate factors of deterioration, as well as defective factors and deterioration factors that occur during the manufacturing process such as scratches and foreign objects, improving yields in the manufacturing process, making handling easy, and reducing costs. Therefore, it is possible to provide a semiconductor light receiving device with high sensitivity, high precision, and high reliability.
第１図は本発明の半導体受光装置の一実施例を示す断面
図である。
第２図はクリアモールドパッケージによって封止を行っ
た半導体受光装置の一例を示す断面図である。
１・・・・・光透過性樹脂
２１１・・・・半導体チップ
３Ｉ１１１＋１・・リードフレーム
４−・・１１１１ポンデイングワイヤ
５・・・・・中空領域
６・・・・・受光領域
７・・・・・光透過性部材
８・・・・・樹脂
代理人 弁理士 山 下 穣 平
第１図
第２皇FIG. 1 is a sectional view showing an embodiment of the semiconductor light receiving device of the present invention. FIG. 2 is a sectional view showing an example of a semiconductor light receiving device sealed with a clear mold package. 1...Light-transmitting resin 211...Semiconductor chip 3I111+1...Lead frame 4-...1111 Ponding wire 5...Hollow region 6...Light receiving area 7... ...Light-transmitting member 8...Resin agent Patent attorney Jo Taira Yamashita Figure 1, Figure 2
Claims (1)
半導体受光装置において、 少なくとも前記半導体受光素子の受光領域が封止体に覆
われていないことを特徴とする半導体受光装置。[Scope of Claims] A semiconductor light-receiving device having a semiconductor light-receiving element and sealed by resin sealing, characterized in that at least a light-receiving region of the semiconductor light-receiving element is not covered with a sealing body. Light receiving device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61162951A JPH07105506B2 (en) | 1986-07-12 | 1986-07-12 | Semiconductor light receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61162951A JPH07105506B2 (en) | 1986-07-12 | 1986-07-12 | Semiconductor light receiving device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6319878A true JPS6319878A (en) | 1988-01-27 |
| JPH07105506B2 JPH07105506B2 (en) | 1995-11-13 |
Family
ID=15764363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61162951A Expired - Fee Related JPH07105506B2 (en) | 1986-07-12 | 1986-07-12 | Semiconductor light receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105506B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5963449U (en) * | 1982-10-21 | 1984-04-26 | 日本電気株式会社 | Solid-state image element |
| JPS6132535A (en) * | 1984-07-25 | 1986-02-15 | Sanyo Electric Co Ltd | Manufacture of sensor |
| JPS6188107U (en) * | 1984-11-15 | 1986-06-09 |
-
1986
- 1986-07-12 JP JP61162951A patent/JPH07105506B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5963449U (en) * | 1982-10-21 | 1984-04-26 | 日本電気株式会社 | Solid-state image element |
| JPS6132535A (en) * | 1984-07-25 | 1986-02-15 | Sanyo Electric Co Ltd | Manufacture of sensor |
| JPS6188107U (en) * | 1984-11-15 | 1986-06-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07105506B2 (en) | 1995-11-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |