JPS63198351A - Adhesion of semiconductor wafer - Google Patents

Abstract

PURPOSE:To enhance the adhesion accuracy by a method wherein a pressurebonding process to pressure-bond a semiconductor wafer to a substrate via a wax is executed in a vacuum. CONSTITUTION:When a semiconductor wafer 1 is bonded to a substrate 2 by using a wax 3, it is pressure-bonded in a vacuum; accordingly, an air bubble contained in the wax 3 which is situated between the semiconductor wafer 1 and the substrate 2 can be removed. That is to say, when the semiconductor wafer 1 is pressure-bonded to a substrate 2, the inside of a vacuum container 5 is evacuated to produce a vacuum and a pressure-bonding process is then executed. By this method, the air bubble contained in the wax 3 can be removed; even when the semiconductor wafer 1 is made to be a thin film, the adhesiveness of the semiconductor wafer 1 to the substrate 2 is enhanced; it is possible to prevent the bonded assembly from being exfoliated partially or the like; in addition, the yield rate of a device can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor wafer bonding method for bonding a semiconductor wafer to another substrate using wax.

[Conventional technology]

Semiconductor wafer bonding is a method of bonding a semiconductor wafer to another substrate using wax with a predetermined load.In the wafer process, it is important to increase the precision of bonding the semiconductor wafer and substrate and to remove air bubbles in the wax. This is important for improving the yield.

FIG. 2 is a schematic diagram showing an example of a conventional method for bonding semiconductor wafers of this type.

In FIG. 2, 1 is a semiconductor wafer, 2 is a substrate to which this semiconductor wafer 1 is attached, 3 is wax applied to attach the semiconductor substrate 1 to the substrate 2, and 4 is a predetermined load on which the semiconductor wafer 1 is attached. The wafer attachment that can be pressed with the wafer indicates the pressurizing part of the device.

In the case of this device, it is affected by the unevenness of the surface of the semiconductor wafer 1, and if there is an unevenness on the surface of the wax 3, there will generally be air bubbles partially between the surface of the wax 3 and the substrate 2 after pressure bonding. It becomes.

[Problem that the invention seeks to solve]

For this reason, in this device, the adhesiveness between the semiconductor wafer 1 and the substrate 2 is extremely reduced in the portion where the bubble is present and the periphery thereof. Therefore, for this object to be processed, for example, after thinning a portion of the semiconductor wafer 1, the entire object to be processed must be subjected to treatments such as repeated heating and heat removal, vacuum evacuation, etc. The untreated portion of the semiconductor wafer peels off, which is a major cause of reducing the yield of devices in the wafer process.

This invention was made to solve the above-mentioned problems, and it reduces air bubbles between the semiconductor wafer and the substrate.
The purpose is to develop a method for bonding semiconductor wafers with improved adhesive strength.

[Means for solving problems]

The semiconductor wafer bonding method according to the present invention is such that the step of pressure bonding the semiconductor wafer to the substrate via wax is performed in a vacuum.

[Effect]

In this invention, when a semiconductor wafer is attached to a substrate using wax, the bonding is performed in a vacuum, so that air bubbles in the wax interposed between the semiconductor wafer and the substrate can be removed.

[Embodiment] FIG. 1 is a sectional view showing a schematic configuration of a method for attaching semiconductor wafers according to an embodiment of the present invention.

In this figure, reference numeral 5 denotes a vacuum container, and when pressing the semiconductor wafer 1 onto the substrate 2, the inside of the vacuum container 5 is evacuated to perform the pressing. Other symbols indicate the same things as in FIG.

By adopting such a method, air bubbles in the wax 3 can be removed, and even if the semiconductor wafer 1 is made into a thin film, the adhesive force between the semiconductor wafer 1 and the substrate 3 is increased, problems such as partial peeling can be solved, and the device The yield is improved.

〔Effect of the invention〕

As explained above, in this invention, the pressure bonding process of bonding the semiconductor wafer to the substrate through the wax is performed in a vacuum, so air bubbles in the wax can be removed when attaching the semiconductor wafer, and therefore the semiconductor wafer and the substrate are bonded together. Since the adhesion force with the substrate is increased, the accuracy of pasting is improved, problems such as partial peeling do not occur even when the semiconductor wafer is thinned, and the device yield is improved.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a schematic structure of an embodiment of the semiconductor wafer bonding method of the present invention, and FIG. 2 is a sectional view showing the structure of a conventional semiconductor wafer bonding method. In the figure, 1 is a semiconductor wafer, 2 is a substrate, 3 is wax, 4 is a pressurizing part of a wafer attachment device, and 5 is a vacuum container. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2! '71

Claims (1)

[Claims] A semiconductor wafer bonding method in which a semiconductor substrate is pressure bonded to another substrate via wax under a predetermined load, the semiconductor wafer bonding method being characterized in that the semiconductor substrate is pressure bonded to the substrate in a vacuum.