JPS6319811A - Manufacture of amorphous silicon film - Google Patents
Manufacture of amorphous silicon filmInfo
- Publication number
- JPS6319811A JPS6319811A JP61163710A JP16371086A JPS6319811A JP S6319811 A JPS6319811 A JP S6319811A JP 61163710 A JP61163710 A JP 61163710A JP 16371086 A JP16371086 A JP 16371086A JP S6319811 A JPS6319811 A JP S6319811A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- gas
- silicon film
- film
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 13
- 239000001307 helium Substances 0.000 claims abstract description 7
- 229910052734 helium Inorganic materials 0.000 claims abstract description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 14
- 239000003085 diluting agent Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 abstract description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 9
- 229910000077 silane Inorganic materials 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、非晶質シリコン膜の製造方法に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a method for manufacturing an amorphous silicon film.
（従来の技術）
非晶質シリコン膜の製造方法のひとつとして、予備分解
法が従来より知られている。例えば、特開昭５９−１４
８３２６の中で予備分解法を用いた非晶質シリコン膜↓
造方法が開示されている。(Prior Art) A predecomposition method has been known as one of the methods for manufacturing an amorphous silicon film. For example, JP-A-59-14
Amorphous silicon film using pre-decomposition method in 8326↓
A manufacturing method is disclosed.
この方法は、原料ガスの分解エネルギーｌこ応じて、熱
、高周波、直流マイクロ波、光エネルギーなどで予備的
に原料ガスを分解した後、反応室ｌこ導入し非晶質シリ
コン膜を形成するものである。In this method, the raw material gas is preliminarily decomposed using heat, high frequency, DC microwave, light energy, etc. depending on the decomposition energy of the raw material gas, and then introduced into a reaction chamber to form an amorphous silicon film. It is something.
この予備分解法を用いれば、分解エネルギーの異なる２
種以上の原料ガスを未処理のまま反応室に導入し非晶質
質シリコン膜を形成する場合よりは）制御性良く所望の
非晶質シリコン膜を得ることができる。If this preliminary decomposition method is used, two
A desired amorphous silicon film can be obtained with better controllability (compared to the case where an amorphous silicon film is formed by introducing untreated raw material gases into the reaction chamber).
しかしながら、従来の予備分解法においては予備分解さ
れる原料ガスの希釈ガスに水素、アルゴンガスが用いら
れてきた。この場合水素ガスは予備分解された後、更に
反応室で分解されるために反応室に所望する以上の水素
ラジカルあるいはイオンが発生し、非晶質シリコン膜の
欠陥密度を増加させることになる。同様に２重に励起エ
ネルギーを加えられたアルゴンガスは、より非晶質シリ
コン膜中に堰り込まれやすくなり、膜中に欠陥を形成し
やすくなる。However, in the conventional preliminary cracking method, hydrogen or argon gas has been used as a diluent gas for the raw material gas to be pre-decomposed. In this case, hydrogen gas is preliminarily decomposed and then further decomposed in the reaction chamber, so that more hydrogen radicals or ions than desired are generated in the reaction chamber, increasing the defect density of the amorphous silicon film. Similarly, the argon gas to which the excitation energy is applied doubly becomes more likely to penetrate into the amorphous silicon film, making it easier to form defects in the film.
従って、非晶質シリコン膜中の欠陥密Ｋを増加させずに
、本来の予備分解効果が発揮されるような効果が望まれ
ていた。Therefore, there has been a desire for an effect in which the original preliminary decomposition effect can be exhibited without increasing the defect density K in the amorphous silicon film.
即ち、予備分解される原料ガスの希釈ガスが、二重に予
備分解エネルギーと反応室での分解エネルギーを加えら
れても反応性に乏しく、非晶質シリコン膜中に欠陥密度
を形成しないことが要求されていた。In other words, even if the diluent gas of the raw material gas to be pre-decomposed is subjected to double pre-decomposition energy and decomposition energy in the reaction chamber, it has poor reactivity and does not form defect density in the amorphous silicon film. It was requested.
（発明が解決しようとする問題点）
以上述べたように、予備分解される原料ガスの希釈ガス
が水素あるいはアルゴンガスである場合、上記のように
希釈ガスが二重に分解エネルギーを加えられる結果、非
晶質シリコン膜中に欠陥密度：を増加させることになり
、予備分解の効果が十分り
ｌこ発ｌされないという問題があった。(Problems to be Solved by the Invention) As stated above, when the diluent gas of the raw material gas to be pre-decomposed is hydrogen or argon gas, the diluent gas is double decomposed energy as described above. However, this increases the defect density in the amorphous silicon film, resulting in the problem that the effect of preliminary decomposition is not sufficiently generated.
本発明は上記の問題点の解決を図るものであり、予備分
解法において、非晶質シリコン膜中の欠陥密度を増加さ
せない非晶質シリコン膜の製造方法を提供することを目
的とする。The present invention aims to solve the above-mentioned problems, and aims to provide a method for manufacturing an amorphous silicon film that does not increase the defect density in the amorphous silicon film in a preliminary decomposition method.
（問題点を解決するための手段）
上記目的を達成するために、本発明による非晶質シリコ
ン膜の製造方法を以下に示す。(Means for Solving the Problems) In order to achieve the above object, a method for manufacturing an amorphous silicon film according to the present invention will be described below.
予備分解される原料ガスが希釈される必要がある場合、
例えば８２Ｈ６ガスなどのドーピングガスを予備分解す
る場合、原料ガスをヘリウムガスで希釈して予備分解し
た後に、反応室に導入し、非晶質シリコン膜を形成した
。If the feed gas to be pre-cracked needs to be diluted,
For example, when preliminarily decomposing a doping gas such as 82H6 gas, the raw material gas was diluted with helium gas and preliminarily decomposed, and then introduced into a reaction chamber to form an amorphous silicon film.
（作 用）
水素ガスあるいはアルゴンガスは、予備分解エネルギー
および反応室での分解エネルギーを２重に加えられると
、前者は所望以上のイオン（Ｈ＋。(Function) When hydrogen gas or argon gas is double-applied with preliminary decomposition energy and decomposition energy in the reaction chamber, the former produces more ions (H+) than desired.
Ｈ７＋など）およびラジカルが発生し、膜中の欠陥密度
を増加させ、後者は二重に励起エネルギーを加えられる
と膜中に取りこまれやすくなり、欠陥密度を増加させる
。一方ヘリウムガスは、上記のように２重の励起エネル
ギーを加えられても、活性度は非常に小さく、膜中ｌど
もほとんど取りこまれるごともないので非晶質シリコン
膜の欠陥密度を増加させることもない。従−て、ヘリウ
ムガスを希釈ガスに用いれば、原料ガスの予備分解効果
を生かして、非晶質シリコン膜が製造されることになる
。H7+, etc.) and radicals are generated, increasing the defect density in the film, and the latter are more likely to be incorporated into the film when double excitation energy is applied, increasing the defect density. On the other hand, even if double excitation energy is applied to helium gas as described above, the activity is very low and it is hardly incorporated into the film, so it does not increase the defect density of the amorphous silicon film. Nor. Therefore, if helium gas is used as the diluent gas, an amorphous silicon film can be manufactured by taking advantage of the effect of preliminary decomposition of the source gas.
（実施例）
本発明による非晶質シリコンＩｉ！製造方法の一実施例
を以下に示す。(Example) Amorphous silicon Ii according to the present invention! An example of the manufacturing method is shown below.
予備分解によって形成される非晶質シリコン膜には、シ
リコン系のアモルファス材料としてａ−８ｉ ：Ｇｅ
：Ｈ、ａ−８ｉ：Ｎ：Ｈ，ａ−８ｉ：Ｃ：Ｈなどが仰ら
れているが、以下の実施例ではジボランガス、’（Ｂ２
Ｈ６）を予備分解して形成した非晶質シリコン膜の例を
示す。The amorphous silicon film formed by preliminary decomposition contains a-8i:Ge as a silicon-based amorphous material.
:H, a-8i:N:H, a-8i:C:H, etc., but in the following examples, diborane gas, '(B2
An example of an amorphous silicon film formed by preliminary decomposition of H6) is shown.
一般に、アンドープ型の水素化非晶質シリコン膜（以下
１ａ−８ｉ：Ｈと記す）は、比抵抗ρが１０１０（Ωｃ
Ｉｎ）以下であり、僅かながらｎ型に近い。そのため、
１ａ−８ｉ：Ｈを高抵抗化するために、微量のＢ２Ｈ６
，１７”スをシラン（ＳｉＨ４）あるいは高次シラン（
ｂ Ｉ ２ Ｈ６）に混合し、反応室で分解反応を発生
させて製膜するやり方が良く知られている。Generally, an undoped hydrogenated amorphous silicon film (hereinafter referred to as 1a-8i:H) has a specific resistance ρ of 1010 (Ωc
In) or less, and is slightly close to n-type. Therefore,
1a-8i: In order to increase the resistance of H, a trace amount of B2H6 is added.
, 17" with silane (SiH4) or higher silane (
A method of forming a film by mixing it with I 2 H6) and causing a decomposition reaction in a reaction chamber is well known.
上記の場合、８２Ｈ６ガスを予備分解すれば分解効率が
高まり、非晶質シリコンネットワークの４ａ位にボロン
が入りやすくなるので同じ高抵抗を達成するために、−
反応室で形成する場合よりは必要とされるＢ２Ｈ６；ｌ
ｉが少なくて済む。その結果膜中に取り込まれるＢ−ｉ
が減少し、Ｂに起因する欠陥密度を減少させることがで
きる。In the above case, if the 82H6 gas is pre-decomposed, the decomposition efficiency will increase and boron will more easily enter the 4a position of the amorphous silicon network, so in order to achieve the same high resistance, -
B2H6 required than when formed in the reaction chamber;
Only a small number of i is required. As a result, B-i is incorporated into the membrane.
is reduced, and the defect density caused by B can be reduced.
第１図は、本発明の非晶質シリコン膜製造方法に用いる
製造装置の概略図である。この製造装置に従って製造方
法を説明する。FIG. 1 is a schematic diagram of a manufacturing apparatus used in the amorphous silicon film manufacturing method of the present invention. The manufacturing method will be explained according to this manufacturing apparatus.
Ｈｅ希釈のＩ Ｐｐｍ〜ｌｏ、０００ｐｐｍ饋度Ｂ２Ｈ
６カスト、必要なら水素ガスあるいはヘリウムガスなど
で希釈されたシランあるいは高次シランガスを流量コン
トロール系ｍで設定流量に調整した後、前者のみ熱、高
周波、直流、マイクロ波あるいは光エネルギーで予備分
解室（２）において予備分解し、反応室（３）に４人し
た。基板（６）はヒーター（力で加熱された接地電極（
５）上に置き、カソード電極（４）に高周波電力を加え
非晶質シリコン膜を形成した。上記ガスは反応室（３）
において分解された後に、排気系（８）で外部１に排気
される。勿論、反応室（３）において高周反電力ではな
く、光励起エネルギーなど他の分解エネルギーが加えら
れても良い。He dilution I Ppm~lo, 000ppm Feediness B2H
After adjusting the flow rate of silane or high-order silane gas diluted with hydrogen gas or helium gas, if necessary, to the set flow rate using the flow control system m, only the former is heated in a preliminary decomposition chamber using heat, high frequency, direct current, microwave, or light energy. It was pre-decomposed in (2), and four people were placed in the reaction chamber (3). The substrate (6) is connected to a heater (ground electrode heated by force).
5) and applied high frequency power to the cathode electrode (4) to form an amorphous silicon film. The above gas is in the reaction chamber (3)
After being decomposed at , it is exhausted to the outside 1 by an exhaust system (8). Of course, other decomposition energy such as optical excitation energy may be applied in the reaction chamber (3) instead of high-frequency inverse power.
ガスｍ ｆｉｔは、Ｔｏｔａｌ流量として１０〜１００
ＳＣＣＭとし、基板温度は５０〜３００℃、カソード電
極（４）に加える高周波電力は５〜２００Ｗとした。Gas m fit is 10 to 100 as a total flow rate.
SCCM was used, the substrate temperature was 50 to 300°C, and the high frequency power applied to the cathode electrode (4) was 5 to 200W.
８ｉＨ，（シラン）とＢ、Ｈ６ガスの流量比を１０６：
１に設定し、Ｈｅ希釈Ｂ２Ｈ６ガスの予備分解エネルギ
ーとして高周波電力５〜２００Ｗ投入した場合の成膜さ
れる非晶質シリコン膜の抵抗率（ρ）および電子のモビ
リティ−・ライフタイムａｔ（μτ積）を表１に示す。The flow rate ratio of 8iH, (silane) and B, H6 gas is 106:
1 and input high-frequency power of 5 to 200 W as preliminary decomposition energy of He-diluted B2H6 gas. ) are shown in Table 1.
従来例には水素希釈Ｂ２Ｈ６ガスを予備分解した例を示
した。The conventional example shows an example in which hydrogen-diluted B2H6 gas is pre-decomposed.
表１
また、表１の比較例には、予備分解法を用いない他は同
一条件で形成した場合の特性を示した。Table 1 In addition, the comparative example in Table 1 shows the characteristics when formed under the same conditions except that the preliminary decomposition method was not used.
表１に示すように、本実施例により高抵抗かつ電子のμ
τ積が高い良質なボロン微量ドープ１ａ−８ｉ：Ｈ膜を
得ることができた。As shown in Table 1, this example shows high resistance and electron μ
A high quality 1a-8i:H film doped with a small amount of boron and having a high τ product could be obtained.
上記の改善がはかられたことにより、ａ−８ｉ光起電力
素子やａ−３ｉ光光導電膜ｎ層型固体撮像素子の特性改
善が可能になった。特にａ−８ｉ光光導電横積型固体撮
像素子において、１ａ−８ｉ：Ｈ膜は高抵抗であり、か
つ数μｍ以上積層される必要があり、電子の高いμτ檀
が要求されるため本実施例による特性改善が者しい。つ
まり、光励起された電子がトラップの影響をほとんど受
けずに、１ａ−８ｉ：Ｈ膜中を走行することができるた
め、トラップから伝導帯に放出される電子数は減少し、
結果的に残像を低減させることができる。The above improvements have made it possible to improve the characteristics of the A-8i photovoltaic device and the A-3i photoconductive film n-layer solid-state imaging device. In particular, in the a-8i photoconductive horizontally stacked solid-state image sensor, the 1a-8i:H film has high resistance and needs to be stacked over several micrometers, which requires a high electron density, so this implementation was implemented. The characteristic improvement by example is obvious. In other words, the photoexcited electrons can travel through the 1a-8i:H film with almost no influence from the traps, so the number of electrons emitted from the traps to the conduction band decreases.
As a result, afterimages can be reduced.
勿論本発明は、正孔のμτ積も大きくなるので、感光体
ドラムへの応用も可能である。Of course, the present invention can also be applied to photosensitive drums since the μτ product of holes becomes large.
以上の実施例においては、予備分解される原料ガスがＢ
２Ｈ６ガスの場合について説明してきたが勿論ＳｉＨ４
，ＧｅＨ，、Ｃ，Ｈ，などへの他の原料ガスにおいても
有効であり、膜中の欠陥密度を増加させずに予備分解の
効果を得ることができる。In the above embodiment, the raw material gas to be pre-decomposed is B
We have explained the case of 2H6 gas, but of course SiH4
, GeH, C, H, etc., and the effect of preliminary decomposition can be obtained without increasing the defect density in the film.
本発明による非晶質シリコン膜製造方法を用いれば、従
来の予備分解される原料ガスの希釈ガスにヘリウムガス
以外を用いる場合よりも膜中の欠陥密度を減少させるた
め、所望の膜質を制御性良く得ることができる。By using the method for manufacturing an amorphous silicon film according to the present invention, the defect density in the film is reduced compared to the conventional case where a gas other than helium gas is used as a diluent gas for the raw material gas to be predecomposed, so it is possible to control the desired film quality. You can get a good deal.
第１図は、本発明を実施する上に用いた装置を示す図で
ある。
２・・・予備分解室、３・・・反応室、４・・・高周波
電力が投入されるカソード電極。FIG. 1 is a diagram illustrating the apparatus used in practicing the invention. 2... Preliminary decomposition chamber, 3... Reaction chamber, 4... Cathode electrode to which high frequency power is input.
Claims (2)
質シリコン膜を形成する製造方法において、予備分解さ
れる原料ガスの希釈ガスがヘリウムガスであることを特
徴とする非晶質シリコン膜の製造方法。(1) In a manufacturing method in which a predecomposed raw material gas is introduced into a reaction chamber to form an amorphous silicon film, the amorphous silicon film is characterized in that a diluent gas for the predecomposed raw material gas is helium gas. Method of manufacturing silicon film.
、ＰＨ＿３などのドーピングガスであることを特徴とす
る特許請求の範囲第１項記載の非晶質シリコン膜の製造
方法。(2) The method for manufacturing an amorphous silicon film according to claim 1, wherein the raw material gas to be predecomposed is a doping gas such as B_2H_6 or PH_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61163710A JPS6319811A (en) | 1986-07-14 | 1986-07-14 | Manufacture of amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61163710A JPS6319811A (en) | 1986-07-14 | 1986-07-14 | Manufacture of amorphous silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6319811A true JPS6319811A (en) | 1988-01-27 |
Family
ID=15779162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61163710A Pending JPS6319811A (en) | 1986-07-14 | 1986-07-14 | Manufacture of amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6319811A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895550A (en) * | 1982-11-01 | 1983-06-07 | Shunpei Yamazaki | Device for forming non-single crystal semiconductor layer |
| JPS59131515A (en) * | 1983-01-17 | 1984-07-28 | Toshiba Corp | Formation of film of amorphous silicon |
-
1986
- 1986-07-14 JP JP61163710A patent/JPS6319811A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895550A (en) * | 1982-11-01 | 1983-06-07 | Shunpei Yamazaki | Device for forming non-single crystal semiconductor layer |
| JPS59131515A (en) * | 1983-01-17 | 1984-07-28 | Toshiba Corp | Formation of film of amorphous silicon |
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