JPS6319706A - Dielectric ceramic - Google Patents
Dielectric ceramicInfo
- Publication number
- JPS6319706A JPS6319706A JP61161538A JP16153886A JPS6319706A JP S6319706 A JPS6319706 A JP S6319706A JP 61161538 A JP61161538 A JP 61161538A JP 16153886 A JP16153886 A JP 16153886A JP S6319706 A JPS6319706 A JP S6319706A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- dielectric ceramic
- load
- present
- porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title description 16
- 239000000203 mixture Substances 0.000 claims description 8
- 229910052573 porcelain Inorganic materials 0.000 claims description 8
- 239000000843 powder Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は誘電体磁器に関し、特に、高周波領域において
、高い無負荷Ｑを有する高周波用として好適である誘電
体磁器に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to dielectric ceramics, and particularly to dielectric ceramics suitable for high frequency applications having a high no-load Q in a high frequency region.
一般に、マイクロ波やミリ波などの高周波領域の信号回
路に使用される誘電体共振器や誘電体基板には、高い誘
電率および高い無負荷Ｑを有し、しかも共振周波数の温
度係数の絶対値が小さい誘電体磁器を用いることが望ま
れている。従来、この種の誘電体磁器として、ＴｉＯ２
系の材料がよく利用され、例えば、ＢａＯ−ＴｉＯ２系
、Ｚｒ０ｚ−ＳｎＯｚ−ＴｉＯｘ系の材料、最近では、
Ｂａ（Ｚｎ、 Ｔａ）Ｏｓ系、Ｂａ（Ｍｇ、 Ｔａ）０
３系の材料等がある。これらの材料からなる誘電体磁器
は、１０ＧＩＩｚ程度の高周波数において無負荷Ｑが３
０００〜７０００、誘電率が２０〜４０、共振周波数の
温度係数がＱｐｐｍ／’Ｃ近傍という特性を有している
。In general, dielectric resonators and dielectric substrates used in signal circuits in high frequency ranges such as microwaves and millimeter waves have a high dielectric constant and a high no-load Q, as well as the absolute value of the temperature coefficient of the resonant frequency. It is desired to use dielectric porcelain with a small resistance. Conventionally, TiO2 was used as this type of dielectric porcelain.
For example, BaO-TiO2-based materials, Zr0z-SnOz-TiOx-based materials, and recently,
Ba(Zn, Ta)Os system, Ba(Mg, Ta)0
There are three types of materials. Dielectric ceramics made of these materials have an unloaded Q of 3 at high frequencies of about 10 GIIz.
000 to 7,000, a dielectric constant of 20 to 40, and a temperature coefficient of resonance frequency in the vicinity of Qppm/'C.
ところで、近年、通信機器に使用される周波数の高周波
化が進み、衛星放送等に使われるＳＨＦ帯においてもこ
れまでより一層高い無負荷Ｑを有する誘電体磁器が求め
られている。このような要求に応えるものとして、特定
の組成からなるＢａＯ−ＮｉＢａ０−Ｎ１Ｏ−，０，系
の誘電体磁器が提案されている（特開昭６０−２１６４
０７号公報）。Incidentally, in recent years, the frequencies used in communication equipment have become higher and higher, and dielectric ceramics having a higher no-load Q than before are required even in the SHF band used for satellite broadcasting and the like. In order to meet these demands, a BaO-NiBa0-N1O-,0 system dielectric ceramic having a specific composition has been proposed (Japanese Patent Laid-Open No. 60-2164).
Publication No. 07).
しかし、上記の特開昭６０−２１６４０７号公報に記・
載の誘電体磁器の無負荷Ｑは、１０Ｇｌｌｚ付近の高周
波領域において９．０００未満であって、前記した周波
数の高周波化の要請に十分に応えることができない。該
公報の記載によると、該誘電体磁器の無負荷Ｑをさらに
大きくするためには貴重かつ高価な希土類元素の添加が
必要であるとの問題がある。However, as described in the above-mentioned Japanese Patent Application Laid-open No. 60-216407,
The unloaded Q of the dielectric ceramic described above is less than 9.000 in a high frequency region around 10 Gllz, and cannot sufficiently meet the above-mentioned request for higher frequencies. According to the description in this publication, there is a problem in that in order to further increase the no-load Q of the dielectric ceramic, it is necessary to add a rare and expensive rare earth element.
そこで、本発明の目的は、希土類元素の使用を必要とせ
ずに、−層高い無負荷Ｑを示す新規なりａＯ−ＮｉＯ−
ＭｇＯ−ＴａｚＯｓ系誘電体磁器を提供することにある
。SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a novel aO-NiO-
An object of the present invention is to provide a MgO-TazOs dielectric ceramic.
すなわち、本発明は、前記問題点を解決するものとして
、
一般式（Ｉ）；
Ｂａ （（Ｍｇ＋−ｘＮｉｘ）＋−ｙＴａｙ） Ｑ２＋
＋１／２１ｙ”’ （１）〔式中、Ｘおよびｙは、そ
れぞれ、０．００１≦Ｘ≦０゜０８８．０．６６≦ｙ≦
０．７２で表わされる数である。〕
で表わされる組成を有する誘電体磁器を提供するもので
ある。That is, the present invention solves the above problems by formula (I); Ba ((Mg+-xNix)+-yTay) Q2+
+1/21y"' (1) [wherein, X and y are respectively 0.001≦X≦0゜088.0.66≦y≦
It is a number expressed as 0.72. ] Provided is a dielectric ceramic having a composition represented by the following.
本発明の誘電体磁器は、前記公開公報により公知のＢａ
Ｏ−ＮｉＢａ０−Ｎ１Ｏ−，０６系磁器とは明確に異な
る組成を有するものであり、かかる限定組成により、高
い誘電率と温度依存性の少ない共振周波数を有する上に
、高周波領域において著しく増大した無負荷Ｑを有する
磁器が得られることを見出したものである。The dielectric ceramic of the present invention is a Ba
It has a composition clearly different from O-NiBa0-N1O-,06 series porcelain, and due to this limited composition, it not only has a high dielectric constant and a resonant frequency with little temperature dependence, but also has a significantly increased frequency in the high frequency range. It was discovered that porcelain having a load Q can be obtained.
すなわち、−Ｃ式（Ｉ）において、Ｘの範囲は０．００
１≦Ｘ≦０．０８８である。ｙの範囲については、０．
６６≦ｙ≦０．７２であり、好ましくは０．６６≦ｙ≦
０．６８である。Ｘが０．０８８を超えると無負荷Ｑは
低下し、０．００１未満では焼結が困難となる。一方、
ｙが０．６６未満になると焼結が困難となり、０．７２
を超えると無負荷Ｑが低下すると共に共振周波数の温度
係数が正の方向に急増し好ましくない。That is, in -C formula (I), the range of X is 0.00
1≦X≦0.088. For the range of y, 0.
66≦y≦0.72, preferably 0.66≦y≦
It is 0.68. When X exceeds 0.088, the no-load Q decreases, and when it is less than 0.001, sintering becomes difficult. on the other hand,
When y is less than 0.66, sintering becomes difficult, and 0.72
Exceeding this is not preferable because the no-load Q decreases and the temperature coefficient of the resonant frequency rapidly increases in the positive direction.
本発明の誘電体磁器の製法については、特に制限はなく
、通常の方法により製造することができる。例えば、Ｂ
ａｓ Ｍｇ、 ＮｉおよびＴａ成分の原料として、それ
ぞれ、炭酸バリウム、酸化マグネシウム、酸化ニッケル
および酸化タンタルの粉末をそれぞれ所望組成の磁器が
得られるような割合で秤量し、それらを十分に混合する
。その混合物を仮焼に供した後、粉砕し、加圧成形する
。得られた成形体ヲ１５００〜１６５０℃程度で焼成す
ることにより本発明の誘電体磁器を製造することができ
る。There are no particular restrictions on the method of manufacturing the dielectric ceramic of the present invention, and it can be manufactured by a conventional method. For example, B
As raw materials for the as Mg, Ni and Ta components, barium carbonate, magnesium oxide, nickel oxide and tantalum oxide powders are weighed in proportions such that porcelain of the desired composition can be obtained, and they are thoroughly mixed. After the mixture is calcined, it is pulverized and press-molded. The dielectric ceramic of the present invention can be manufactured by firing the obtained molded body at about 1500 to 1650°C.
以下、本発明を実施例および比較例により詳細に説明す
る。Hereinafter, the present invention will be explained in detail with reference to Examples and Comparative Examples.
原料として、それぞれ純度９９．９モル％の炭酸バリウ
ム、酸化マグネシウム、酸化ニッケルおよび酸化タンタ
ルの粉末を用意し、これら原料粉末を一般式（１）にお
けるＸおよびｙの値が第１表に示す８種の試料（＊印を
付した試料は比較例、他は実施例）のそれとなるように
各試料番号ごとにそれぞれ秤量し、純水と共にボールミ
ルのポットに入れ、１６時時間式混合した。この混合物
をポットから取り出し、１５０℃で５時間乾燥した後、
空気中において１０００℃で２時間仮焼した。仮焼後、
粉砕し、４２メツシユの篩を通して整粒した。得られた
粉末を金型を用いて圧力５００ｋｇ／−で直径１０鶴、
厚さ約５鶴の円板状に一次成形した後、圧力２０００
ｋｇ ／ ｃ＋ａでラバープレスにて圧縮し、成形体と
した。この成形体を酸素気流中、１６５０℃で４時間焼
成して磁器を得た。As raw materials, barium carbonate, magnesium oxide, nickel oxide, and tantalum oxide powders each having a purity of 99.9 mol% were prepared, and these raw material powders were mixed into powders with the values of X and y in general formula (1) shown in Table 1. Seed samples (samples marked with * are comparative examples, others are examples) were weighed for each sample number, placed in a pot of a ball mill with pure water, and mixed for 16 hours. This mixture was taken out of the pot and dried at 150°C for 5 hours.
It was calcined in air at 1000°C for 2 hours. After calcination,
It was crushed and sized through a 42 mesh sieve. The obtained powder was molded using a mold at a pressure of 500 kg/- to a diameter of 10 mm.
After primary forming into a disc shape with a thickness of about 5 cranes, the pressure is 2000
It was compressed using a rubber press at kg/c+a to form a molded product. This molded body was fired at 1650° C. for 4 hours in an oxygen stream to obtain porcelain.
得られた磁器の誘電率（εｒ）および無負荷Ｑ（Ｑｕ）
を誘電体円柱共振器法により約１０ＧＩＩｚの周波数に
おいて測定した。また、−１０℃からａｏ’ｃの温度範
囲における共振周波数を測定し、２０℃における共振周
波数の温度係数（τｆ）を算出した。得られた結果を第
１表に示す。Dielectric constant (εr) and unloaded Q (Qu) of the obtained porcelain
was measured at a frequency of about 10 GIIz by the dielectric cylindrical resonator method. Further, the resonant frequency in the temperature range from -10°C to ao'c was measured, and the temperature coefficient (τf) of the resonant frequency at 20°C was calculated. The results obtained are shown in Table 1.
第１表より、本発明の実施例である試料番号１〜６の誘
電体磁器は、１０．０００以上の大きい無負荷Ｑを有し
ていることがわかる。From Table 1, it can be seen that the dielectric ceramics of sample numbers 1 to 6, which are examples of the present invention, have a large no-load Q of 10.000 or more.
本発明の誘電体磁器は、１０Ｇｆｌｚ付近の高周波領域
においても無負荷Ｑが１０，０００以上という非常に高
い値を有しており、最近の使用周波数の高周波化の要請
に応え得るものである。The dielectric ceramic of the present invention has a very high no-load Q of 10,000 or more even in a high frequency region around 10 Gflz, and can meet the recent demand for higher frequencies.
しかも、共振周波数の温度係数の絶対値も小さく、誘電
率においても高い値を有しており、高周波用の誘電体共
振器や誘電体基板等に使用される誘電体磁器として極め
て有用なものである。Moreover, the absolute value of the temperature coefficient of the resonance frequency is small and the dielectric constant is also high, making it extremely useful as a dielectric ceramic used for high frequency dielectric resonators, dielectric substrates, etc. be.
Claims (1)
＿ｙ｝Ｏ＿２＋＿（＿３＿／＿２）＿ｙ〔式中、ｘおよ
びｙは、それぞれ、０．００１≦ｘ≦０．０８８、０．
６６≦ｙ≦０．７２で表わされる数である。〕 で表わされる組成を有する誘電体磁器。[Claims] General formula: Ba{(Mg_1_-_xNi_x)_1_-_yTa
_y}O_2+_(_3_/_2)_y [where x and y are respectively 0.001≦x≦0.088, 0.
This is a number expressed by 66≦y≦0.72. ] Dielectric porcelain having a composition represented by:
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61161538A JPS6319706A (en) | 1986-07-09 | 1986-07-09 | Dielectric ceramic |
| CA000540834A CA1296177C (en) | 1986-07-09 | 1987-06-29 | Dielectric ceramics |
| EP19870305786 EP0252668B1 (en) | 1986-02-21 | 1987-06-30 | Dielectric ceramics |
| DE8787305786T DE3776437D1 (en) | 1986-07-09 | 1987-06-30 | DIELECTRIC CERAMICS. |
| US07/240,448 US4830995A (en) | 1986-07-09 | 1988-09-02 | Dielectric ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61161538A JPS6319706A (en) | 1986-07-09 | 1986-07-09 | Dielectric ceramic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6319706A true JPS6319706A (en) | 1988-01-27 |
| JPH0548562B2 JPH0548562B2 (en) | 1993-07-21 |
Family
ID=15737001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61161538A Granted JPS6319706A (en) | 1986-02-21 | 1986-07-09 | Dielectric ceramic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6319706A (en) |
-
1986
- 1986-07-09 JP JP61161538A patent/JPS6319706A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0548562B2 (en) | 1993-07-21 |
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