JPH0773735A - Dielectric porcelain composition for high frequency - Google Patents

Dielectric porcelain composition for high frequency

Info

Publication number
JPH0773735A
JPH0773735A JP5159254A JP15925493A JPH0773735A JP H0773735 A JPH0773735 A JP H0773735A JP 5159254 A JP5159254 A JP 5159254A JP 15925493 A JP15925493 A JP 15925493A JP H0773735 A JPH0773735 A JP H0773735A
Authority
JP
Japan
Prior art keywords
dielectric
high frequency
value
porcelain composition
dielectric porcelain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5159254A
Other languages
Japanese (ja)
Other versions
JP3318396B2 (en
Inventor
Yoshihiro Okawa
善裕 大川
Seiichiro Hirahara
誠一郎 平原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP15925493A priority Critical patent/JP3318396B2/en
Publication of JPH0773735A publication Critical patent/JPH0773735A/en
Application granted granted Critical
Publication of JP3318396B2 publication Critical patent/JP3318396B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To provide a dielectric porcelain composition provided with a high dielectric constant and a high Q value in a high frequency area. CONSTITUTION:A dielectric porcelain composition consists of complex oxide containing at least Ba, Zn, W as metal elements, and its composition formula by mole rate of these metal elements is represented as aBaO.bZnO.cWO3. In this formula, (a), (b), (c) satisfy the following relations such as 0.40<=(a)<=0.55, 0.15<=(b)<=0.39, 0.20<=(c)<=0.30, (a)+(b)+(c)=1.00.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、マイクロ波、ミリ波等
の高周波領域において高い誘電率及び高いQ値を有する
新規な誘電体磁器組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel dielectric ceramic composition having a high dielectric constant and a high Q value in a high frequency region such as microwave and millimeter wave.

【0002】[0002]

【従来技術】マイクロ波やミリ波等の高周波領域におい
て、誘電体磁器は誘電体共振器やMIC用誘電体基板等
に広く利用されている。
2. Description of the Related Art Dielectric ceramics are widely used for dielectric resonators, dielectric substrates for MICs, etc. in a high frequency range such as microwaves and millimeter waves.

【0003】従来より、この種の誘電体磁器としては、
例えば、MgTiO3 −CaTiO3 系材料が知られて
いる。このような材料は、誘電率が20程度、1GHz
に換算したQ値が20000程度の特性を有している。
Conventionally, as a dielectric ceramic of this type,
For example, a MgTiO 3 —CaTiO 3 based material is known. Such a material has a dielectric constant of about 20 and 1 GHz.
It has a characteristic that the Q value converted into is about 20,000.

【0004】[0004]

【発明が解決しようとする問題点】しかしながら、近年
では使用機器の多用化により使用周波数がより高くな
り、このような高周波数領域での誘電特性、特に高Q値
が要求されるようになっているが、前述したような従来
の誘電体材料では未だ実用的レベルの高Q値が得られて
いないのが現状であった。また、比誘電率も未だ低いと
いう問題があった。
However, in recent years, the frequency of use has become higher due to the diversification of equipment used, and dielectric characteristics, particularly high Q value, in such a high frequency region have been required. However, the conventional dielectric material as described above has not yet achieved a high Q value of a practical level. Further, there is a problem that the relative dielectric constant is still low.

【0005】従って、本発明は高周波領域において高い
Q値および高い比誘電率を有する新規な誘電体磁器組成
物を提供することを目的とするものである。
Therefore, an object of the present invention is to provide a novel dielectric ceramic composition having a high Q value and a high relative dielectric constant in the high frequency region.

【0006】[0006]

【問題点を解決するための手段】本発明者等は、上記問
題点に対して検討を加えた結果、金属元素としてBa、
Zn、Wを含有する複合酸化物を所定比率に設定する
と、優れた誘電特性が得られることを知見し本発明に至
った。
Means for Solving the Problems As a result of studying the above problems, the present inventors have found that Ba as a metal element,
The present inventors have found that excellent dielectric properties can be obtained by setting a complex oxide containing Zn and W to a predetermined ratio, and have reached the present invention.

【0007】即ち、本発明の誘電体磁器組成物は、金属
元素として少なくともBa、Zn、Wを含有する複合酸
化物であって、これらの金属元素のモル比による組成式
をaBaO・bZnO・cWO3 と表した時、前記a,
b,cが、0.40≦a≦0.55、0.15≦b≦
0.39、0.20≦c≦0.30、a+b+c=1.
00を満足する組成物である。
That is, the dielectric ceramic composition of the present invention is a composite oxide containing at least Ba, Zn, and W as metal elements, and the composition formula based on the molar ratio of these metal elements is aBaO.bZnO.cWO. When expressed as 3 , the a,
b and c are 0.40 ≦ a ≦ 0.55, 0.15 ≦ b ≦
0.39, 0.20 ≦ c ≦ 0.30, a + b + c = 1.
The composition satisfies 00.

【0008】本発明の誘電体磁器組成物において、Ba
Oのモル比を0.40≦a≦0.55に設定したのは、
aが0.40よりも小さい場合にはQ値が低下し、0.
55よりも大きい場合には焼結が困難となる傾向にある
からである。特に、0.43≦a≦0.53とすること
が好ましい。
In the dielectric ceramic composition of the present invention, Ba
The molar ratio of O is set to 0.40 ≦ a ≦ 0.55 because
When a is smaller than 0.40, the Q value decreases, and 0.
If it is larger than 55, sintering tends to be difficult. Particularly, it is preferable that 0.43 ≦ a ≦ 0.53.

【0009】また、ZnOのモル比を0.15≦b≦
0.39としたのは、bが0.15よりも少ない場合に
は焼結が困難となり、或いはQ値が低下するからであ
り、0.39より大きい場合にはQ値が低下するからで
ある。特に、0.20≦b≦0.35とすることが好ま
しい。
Further, the molar ratio of ZnO is 0.15 ≦ b ≦
The reason for setting 0.39 is that if b is less than 0.15, the sintering becomes difficult or the Q value decreases, and if it exceeds 0.39, the Q value decreases. is there. In particular, it is preferable that 0.20 ≦ b ≦ 0.35.

【0010】WO3 のモル比を0.20≦c≦0.30
としたのは、cが0.20より少ない場合には焼結性が
低下するからであり、0.30より大きい場合にはQ値
が低下し、焼結不良となるからである。特に0.22≦
c≦0.28とすることが好ましい。
The molar ratio of WO 3 is 0.20≤c≤0.30.
The reason for this is that if c is less than 0.20, the sinterability is reduced, and if it is greater than 0.30, the Q value is reduced, resulting in poor sintering. Especially 0.22 ≦
It is preferable that c ≦ 0.28.

【0011】また、本発明の誘電体材料は、Ba、Z
n、Wを含有する複合酸化物であり、主にBa(Zn
1/2 1/2 ) 03 で表されるペロブスカイト型結晶相を
主結晶相とするものであるが、組成が前記範囲を満足す
る限りにおいて他にペロブスカイト型結晶相以外のもの
を含んでも良い。このような結晶を有する材料はそれ自
体焼結体等の多結晶体でもあるいは単結晶体のいずれの
形態でも良い。
The dielectric material of the present invention is made of Ba, Z
It is a complex oxide containing n and W, and is mainly Ba (Zn
1/2 W 1/2) 0 3 perovskite crystal phase represented the one in which a main crystal phase, but also include those other than the perovskite-type crystal phase as long as the composition satisfies the above range good. The material having such a crystal may itself be a polycrystal such as a sintered body or a single crystal.

【0012】本発明の組成範囲を図1の3元図に示し
た。図1において、点a−b−c−d−aによって囲ま
れる領域が本発明の組成範囲である。
The composition range of the present invention is shown in the ternary diagram of FIG. In FIG. 1, the region surrounded by points abcdaa is the composition range of the present invention.

【0013】本発明に基づき磁器を作成する方法として
は、例えばBa、Zn、Wの酸化物あるいは焼成により
酸化物を生成する炭酸塩、硝酸塩等の金属塩を原料とし
て用い、これらを前述した範囲になるように秤量した
後、ボールミルで湿式粉砕し、脱水乾燥する。この後、
混合物を500〜1500℃で0.1〜100時間仮焼
処理し、仮焼物をボールミルに入れ,溶媒および有機バ
インダーとともに混合粉砕し、造粒あるいは整粒する。
そして、この仮焼粉末を、例えば、所定の圧力でプレス
成形し所定の形状に成形し、大気中において1200〜
1750℃で0.1〜200時間焼成することにより相
対密度90%以上の誘電体磁器を得ることができる。
As a method for producing a porcelain according to the present invention, for example, an oxide of Ba, Zn, W or a metal salt such as a carbonate or a nitrate which produces an oxide by firing is used as a raw material, and these are in the above-mentioned range. It is weighed so as to be, then wet-milled with a ball mill, dehydrated and dried. After this,
The mixture is calcined at 500 to 1500 ° C. for 0.1 to 100 hours, put in a ball mill, mixed and pulverized with a solvent and an organic binder, and granulated or sized.
Then, the calcined powder is press-molded at a predetermined pressure to be molded into a predetermined shape, for example, and then in the atmosphere,
By firing at 1750 ° C. for 0.1 to 200 hours, a dielectric ceramic with a relative density of 90% or more can be obtained.

【0014】[0014]

【実施例】以下、本発明を次の実施例で説明する。The present invention will be described in the following examples.

【0015】原料として純度99%以上のBaCO3
ZnOおよびWO3 の粉末を用いて、これらを表1に示
す割合に秤量し、これをゴムで内張りしたボールミルに
水と共に入れ、直径10mmのZrO2 ボールを用いて
湿式混合した。次いで、この混合物を脱水、乾燥した
後、1200℃で2時間仮焼し、当該仮焼物をボールミ
ルに水、有機バインダーを入れ湿式粉砕した。
BaCO 3 having a purity of 99% or more as a raw material,
ZnO and WO 3 powders were used and weighed in the proportions shown in Table 1, put together with water in a ball mill lined with rubber, and wet-mixed using ZrO 2 balls having a diameter of 10 mm. Next, this mixture was dehydrated and dried, and then calcined at 1200 ° C. for 2 hours, and the calcined product was wet-ground by adding water and an organic binder to a ball mill.

【0016】その後、この粉砕物を乾燥した後、50番
メッシュの網を通して造粒し、得られた粉末を1ton
/cm2 の圧力で20mmφ×10mmの寸法からなる
円板に成形した。更に、この円板を1400〜1500
℃×2時間の条件で焼成して磁器試料を得た。この磁器
試料を加工して14mmφ×7mmの寸法からなる円柱
を得た。
Thereafter, the pulverized product was dried and then granulated through a mesh of No. 50 mesh to obtain 1 ton of the obtained powder.
A disk having a size of 20 mmφ × 10 mm was formed at a pressure of / cm 2 . Furthermore, this disk is 1400 to 1500
A porcelain sample was obtained by firing under the condition of ° C x 2 hours. This porcelain sample was processed to obtain a cylinder having dimensions of 14 mmφ × 7 mm.

【0017】かくして得られた磁器試料について、周波
数5〜7GHzにおける比誘電率(εr),Q値を誘電
体共振器法にて測定し、また25℃から85℃までの温
度範囲における共振周波数の温度変化を測定し共振周波
数の温度係数(τf)を計算した。Q値はマイクロ波誘
電体において一般に成立するQ値×測定周波数f=一定
の関係から1GHzでのQ値に換算した。それらの結果
を表1に示した。
With respect to the thus obtained porcelain sample, the relative permittivity (εr) and Q value at a frequency of 5 to 7 GHz were measured by the dielectric resonator method, and the resonance frequency in the temperature range from 25 ° C to 85 ° C was measured. The temperature change was measured and the temperature coefficient (τf) of the resonance frequency was calculated. The Q value was converted into the Q value at 1 GHz from the relationship of Q value generally established in the microwave dielectric × measurement frequency f = constant. The results are shown in Table 1.

【0018】[0018]

【表1】 [Table 1]

【0019】表1によれば、配合組成が本発明の範囲を
逸脱する試料No.4〜9及び18はQ値が1000以
下あるいは焼結不良を生じた。これに対して、本発明の
試料は比誘電率22〜28、Q値23000以上が達成
された。
According to Table 1, the sample No. having a composition deviated from the scope of the present invention. Nos. 4 to 9 and 18 had a Q value of 1000 or less, or caused defective sintering. On the other hand, the samples of the present invention achieved a relative dielectric constant of 22 to 28 and a Q value of 23,000 or more.

【0020】また、試料No.10の磁器に対してX線回
折測定を行い、その結果を図2に示した。図2によれば
○印のピークによりペロブスカイト型結晶構造体である
ことが理解され、その組成式はBa(Zn1/2 1/2 )
3 であると推定される。
Further, the X-ray diffraction measurement was performed on the porcelain of Sample No. 10, and the results are shown in FIG. According to FIG. 2, it can be understood from the peak marked with a circle that it is a perovskite type crystal structure, and its composition formula is Ba (Zn 1/2 W 1/2 ).
It is estimated to be 0 3 .

【0021】[0021]

【発明の効果】以上詳述した通り、本発明によれば、金
属元素として少なくともBa、Zn、Wを含有する複合
酸化物であって、これらの金属元素のモル比による組成
式をaBaO・bZnO・cWO3 と表した時、a,
b,cを所定値とすることにより、高周波領域において
高い誘電率および高いQ値を得ることができる。それに
より、マイクロ波やミリ波領域において使用される共振
器用材料やMIC用誘電体基板材料,その他の電子部品
等に充分適用することができる。
As described in detail above, according to the present invention, a composite oxide containing at least Ba, Zn, and W as metal elements, and the composition formula based on the molar ratio of these metal elements is aBaO.bZnO.・ When expressed as cWO 3 , a,
By setting b and c to predetermined values, a high dielectric constant and a high Q value can be obtained in a high frequency region. As a result, it can be sufficiently applied to resonator materials used in the microwave and millimeter wave regions, dielectric substrate materials for MIC, and other electronic parts.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の範囲を示すBaO−ZnO−WO3
3元図である。
FIG. 1 is a ternary diagram of BaO—ZnO—WO 3 showing the scope of the present invention.

【図2】実施例中、試料No.10のX線回折チャート図
である。
FIG. 2 is an X-ray diffraction chart of Sample No. 10 in the examples.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】金属元素として少なくともBa、Zn、W
を含有する複合酸化物であって、これらの金属元素のモ
ル比による組成式をaBaO・bZnO・cWO3 と表
した時、前記a,b,cが 0.40≦a≦0.55 0.15≦b≦0.39 0.20≦c≦0.30 a+b+c=1.00 を満足することを特徴とする高周波用誘電体磁器組成
物。
1. At least Ba, Zn and W as metal elements.
A composite oxide containing, when the composition formula by molar ratio of the metal elements expressed as aBaO · bZnO · cWO 3, wherein a, b, c is 0.40 ≦ a ≦ 0.55 0. 15 ≦ b ≦ 0.39 0.20 ≦ c ≦ 0.30 a + b + c = 1.00 is satisfied, The high frequency dielectric ceramic composition.
JP15925493A 1993-06-29 1993-06-29 High frequency dielectric ceramic composition Expired - Fee Related JP3318396B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15925493A JP3318396B2 (en) 1993-06-29 1993-06-29 High frequency dielectric ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15925493A JP3318396B2 (en) 1993-06-29 1993-06-29 High frequency dielectric ceramic composition

Publications (2)

Publication Number Publication Date
JPH0773735A true JPH0773735A (en) 1995-03-17
JP3318396B2 JP3318396B2 (en) 2002-08-26

Family

ID=15689740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15925493A Expired - Fee Related JP3318396B2 (en) 1993-06-29 1993-06-29 High frequency dielectric ceramic composition

Country Status (1)

Country Link
JP (1) JP3318396B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454711B1 (en) * 2002-04-24 2004-11-05 주식회사 지믹스 Microwave dielectric ceramic compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454711B1 (en) * 2002-04-24 2004-11-05 주식회사 지믹스 Microwave dielectric ceramic compositions

Also Published As

Publication number Publication date
JP3318396B2 (en) 2002-08-26

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